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  • 1.
    Akan, Rabia
    et al.
    KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
    Parfeniukas, Karolis
    KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
    Vogt, Carmen
    KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
    Toprak, M. S.
    KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
    Vogt, Ulrich
    KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
    Reaction control of metal-assisted chemical etching for silicon-based zone plate nanostructures2018Inngår i: RSC Advances, ISSN 2046-2069, E-ISSN 2046-2069, Vol. 8, nr 23, s. 12628-12634Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Metal-assisted chemical etching (MACE) reaction parameters were investigated for the fabrication of specially designed silicon-based X-ray zone plate nanostructures using a gold catalyst pattern and etching solutions composed of HF and H2O2. Etching depth, zone verticality and zone roughness were studied as a function of etching solution composition, temperature and processing time. Homogeneous, vertical etching with increasing depth is observed at increasing H2O2 concentrations and elevated processing temperatures, implying a balance in the hole injection and silica dissolution kinetics at the gold-silicon interface. The etching depth decreases and zone roughness increases at the highest investigated H2O2 concentration and temperature. Possible reasons for these observations are discussed based on reaction chemistry and zone plate design. Optimum MACE conditions are found at HFH2O2 concentrations of 4.7 M:0.68 M and room temperature with an etching rate of ≈0.7 μm min-1, which is about an order of magnitude higher than previous reports. Moreover, our results show that a grid catalyst design is important for successful fabrication of vertical high aspect ratio silicon nanostructures. 

  • 2.
    Parfeniukas, Karolis
    et al.
    KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
    Giakoumidis, Stylianos
    KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
    Akan, Rabia
    KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
    Vogt, Ulrich
    KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
    High-aspect ratio zone plate fabrication for hard x-ray nanoimaging2017Inngår i: Advances in X-Ray/EUV Optics and Components XII / [ed] Morawe, C Khounsary, AM Goto, S, SPIE - International Society for Optical Engineering, 2017, Vol. 10386, artikkel-id UNSP 103860SKonferansepaper (Fagfellevurdert)
    Abstract [en]

    We present our results in fabricating Fresnel zone plate optics for the NanoMAX beamline at the fourth-generation synchrotron radiation facility MAX IV, to be used in the energy range of 6-10 keV. The results and challenges of tungsten nanofabrication are discussed, and an alternative approach using metal-assisted chemical etching (MACE) of silicon is showcased. We successfully manufactured diffraction-limited zone plates in tungsten with 30 nm outermost zone width and an aspect ratio of 21:1. These optics were used for nanoimaging experiments at NanoMAX. However, we found it challenging to further improve resolution and diffraction efficiency using tungsten. High efficiency is desirable to fully utilize the advantage of increased coherence on the optics at MAX IV. Therefore, we started to investigate MACE of silicon for the nanofabrication of high-resolution and high-efficiency zone plates. The first type of structures we propose use the silicon directly as the phase-shifting material. We have achieved 6 mu m deep dense vertical structures with 100 nm linewidth. The second type of optics use iridium as the phase material. The structures in the silicon substrate act as a mold for iridium coating via atomic layer deposition (ALD). A semi-dense pattern is used with line-to-space ratio of 1:3 for a so-called frequency-doubled zone plate. This way, it is possible to produce smaller structures with the tradeoff of the additional ALD step. We have fabricated 45 nm-wide and 3.6 mu m-tall silicon/iridium structures.

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