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  • 1.
    Canestraro, Carla Daniele
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Electrical and optical properties of thin film SnO2 and SnO2:F: transparent electrodes in organic photovoltaics2008Licentiate thesis, comprehensive summary (Other scientific)
  • 2.
    Canestraro, Carla Daniele
    et al.
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Oliveira, Marcela M.
    Departamento de Química, Universidade Federal do Paraná.
    Valaski, Rogerio
    Departamento de Física, Universidade Federal do Paraná.
    da Silva, Marcus V. S.
    Instituto de Física, Universidade Federal da Bahia.
    David, Denis G. F.
    Instituto de Física, Universidade Federal da Bahia.
    Pepe, Iuri
    Instituto de Física, Universidade Federal da Bahia.
    Ferreira da Silva, Antonio
    Instituto de Física, Universidade Federal da Bahia.
    Roman, Lucimara S.
    Departamento de Física, Universidade Federal do Paraná.
    Persson, Clas
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Strong inter-conduction-band absorption in heavily fluorine doped tin oxide2008In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 255, no 5, p. 1874-1879Article in journal (Refereed)
    Abstract [en]

    The optical, electrical and structural properties of thin. film tin oxide (TO), F-doped tin oxide (FTO; n(F) approximate to 6 x 10(20) cm (3)) and highly F-doped tin oxide (hFTO; n(F) approximate to 10 x 10(20) cm (3)), grown by spray pyrolysis technique, are studied by atomic force microscopy, Hall effect, X-ray. fluorescence and transmission/reflection measurements. The resistivity (rho = 32 x 10 (4) Omega cm for intrinsic tin oxide) shows intriguing characteristics when F concentration n(F) is increased (rho = 6 x 10 (4) Omega cm for FTO but 25 x 10 (4) Omega cm for hFTO) whereas the carrier concentration is almost constant at high F concentration (n(c) approximate to 6 x 10(20) cm (3) for FTO and hFTO). Thus, F seems to act both as a donor and a compensating acceptor in hFTO. The high carrier concentration has a strong effect on the optical band-edge absorption. Whereas intrinsic TO has room-temperature band-gap energy of E-g approximate to 3.2 eV with an onset to absorption at about 3.8 eV, the highly doped FTO and hFTO samples show relatively strong absorption at 2-3 eV. Theoretical analysis based on density functional calculations of FTO reveals that this is not a defect state within the band-gap region, but instead a consequence of a hybridization of the F donor states with the host conduction band in combination with a band. filling of the lowest conduction band by the free carriers. This allows photon-assisted inter-conduction band transitions of the free electrons to energetically higher and empty conduction bands, producing the below-gap absorption peak.

  • 3.
    Canestraro, Carla Daniele
    et al.
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Roman, Lucimara S.
    Departamento de Física, Universidade Federal do Paraná.
    Persson, Clas
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Polarization dependence of the optical response in SnO2 and the effects from heavily F doping2009In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 517, no 23, p. 6301-6304Article in journal (Refereed)
    Abstract [en]

    The optical properties of intrinsic SnO2 (TO) and fluorine doped (FTO) are characterized in terms of the dielectric function epsilon(h omega) = epsilon(1) (h omega) + i epsilon(2)(h omega) by electronic structure calculations. The intrinsic TO shows intriguing absorption characteristics in the 3.0-8.0 eV region: (i) the low energy region of the fundamental band gap (3.2<h omega<3.9 eV), the optical transitions Gamma(+)(3) -> Gamma(+)(1) (valence-band maximum to conduction-band minimum) is symmetry forbidden, and the band-edge absorption is therefore extremely weak. (ii) In the higher energy region (3.9<h omega<5.1 eV) the Gamma(-)(5) -> Gamma(+)(1), transitions (from the second uppermost valence band) is strongly polarized perpendicular to the main c axis. (iii) Transitions with polarization axis parallel to c axis are generated from Gamma(-)(2) -> Gamma(+)(1) transitions (from the third uppermost valence bands), and dominates at high energies (5.1<h omega eV). Heavily F doped TO (FTO) with doping concentrations n(F) = 4 x 10(20) cm(-3) changes the absorption significantly: (iv) Substitutional F-O generates strong inter-conduction band absorption at 0.8, 2.2, and 3.8 eV which affects also the high frequency dielectric constant epsilon(infinity). (v) Interstitial F-i is inactive as a single dopant, but act as a compensating acceptor in highly n-type FTO. This explains the measured non-linear dependence of the resistivity with respect to F concentration.

  • 4. Da Silva, A. F.
    et al.
    Meira, M. V. C.
    Baldissera, Gustavo
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Persson, Clas
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Gutman, N.
    Sáar, A.
    Klason, P.
    Willander, M.
    Canestraro, Carla D.
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering. Universidade Federal do Paraná, Brazil .
    Moreno, T. V.
    Roman, L. S.
    Growth, electrical and optical properties of SnO2: F on ZnO, Si and porous Si structures2009In: Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics - Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009, 2009, p. 352-355Conference paper (Refereed)
    Abstract [en]

    In this work we have analyzed the optical absorption of the ZnO and SnO2:F (FTO) films and applied them in porous silicon light-emitting diodes. The absorption and energy gap were calculated by employing the projector augmented wave method [1] within the local density approximation and with a modeled on-site self-interaction-like correction potential within the LDA+U SIC [2]. Experiment and theory show a good agreement when the optical absorption and optical energy gap are considered. A layer of FTO is deposited by spray pyrolysis on top of porous Si (PSi) or ZnO/(PSi) in order to make the LEDs. The morphology and roughness of the films are analyzed by Atomic Force Microscopy before and after the FTO deposition. The electrical and optical properties are studied by characteristics curves J × V, and electroluminescence intensity versus bias.

  • 5.
    da Silva, A. Ferreira
    et al.
    Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA, Brazil..
    Castro Meira, M. V.
    Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA, Brazil.;CETEC Univ Fed Reconcavo Bahia, BR-44380000 Cruz Das Almas, BA, Brazil..
    Baldissera, Gustavo
    KTH, School of Engineering Sciences (SCI), Mathematics (Dept.). KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Persson, Clas
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Gutman, N.
    Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel.;Hebrew Univ Jerusalem, Ctr Nanosci & Nanotechnol, IL-91904 Jerusalem, Israel..
    Sa'ar, A.
    Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel.;Hebrew Univ Jerusalem, Ctr Nanosci & Nanotechnol, IL-91904 Jerusalem, Israel..
    Klason, P.
    Gothenburg Univ, Dept Phys, SE-41296 Gothenburg, Sweden..
    Willander, M.
    Gothenburg Univ, Dept Phys, SE-41296 Gothenburg, Sweden.;Linkoping Univ, Dept Sci & Technol ITN, SE-60174 Norrkoping, Sweden..
    Canestraro, Carla
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Moreno, T. V.
    Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, Parana, Brazil..
    Roman, L. S.
    Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, Parana, Brazil..
    Growth, Electrical and Optical Properties of SnO2:F on ZnO, Si and Porous Si Structures2009In: NANOTECH CONFERENCE & EXPO 2009, VOL 1, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: FABRICATION, PARTICLES, CHARACTERIZATION, MEMS, ELECTRONICS AND PHOTONICS / [ed] Laudon, M Romanowicz, B, CRC PRESS-TAYLOR & FRANCIS GROUP , 2009, p. 352-+Conference paper (Refereed)
    Abstract [en]

    In this work we have analyzed the optical absorption of the ZnO and SnO2:F (FTO) films and applied them in porous silicon light-emitting diodes. The absorption and energy gap were calculated by employing the projector augmented wave method [1] within the local density approximation and with a modeled on-site self-interaction-like correction potential within the LDA+U-S/C [2]. Experiment and theory show a good agreement when the optical absorption and optical energy gap are considered. A layer of FTO is deposited by spray pyrolysis on top of porous Si (PSi) or ZnO/(PSi) in order to make the LEDs. The morphology and roughness of the films are analyzed by Atomic Force Microscopy before and after the FTO deposition. The electrical and optical properties are studied by characteristics curves J x V, and electroluminescence intensity versus bias.

  • 6.
    Roman, L. S.
    et al.
    Departamento de Física, Universidade Federal do Paraná.
    Valaski, R.
    Departamento de Física, Universidade Federal do Paraná.
    Canestraro, Carla Daniele
    Departamento de Física, Universidade Federal do Paraná.
    Magalhães, E. C. S.
    Instituto de Física, Universidade Federal da Bahia.
    Persson, Clas
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Ahuja, Rajeev
    Department of Physics, Uppsala University.
    da Silva Jr., E. F.
    Departamento de Física, Universidade Federal de Pernambuco.
    Pepe, I.
    Instituto de Física, Universidade Federal da Bahia.
    Ferreira da Silva, Antonio
    Instituto de Física, Universidade Federal da Bahia.
    Optical band-edge absorption of oxide compound SnO22006In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 252, no 15, p. 5361-5364Article in journal (Refereed)
    Abstract [en]

    Tin oxide (SnO2) is an important oxide for efficient dielectrics, catalysis, sensor devices, electrodes and transparent conducting coating oxide technologies. SnO2 thin film is widely used in glass applications due to its low infra-red heat emissivity. In this work, the SnO2 electronic band-edge structure and optical properties are studied employing a first-principle and fully relativistic full-potential linearized augmented plane wave (FPLAPW) method within the local density approximation (LDA). The optical band-edge absorption alpha(omega) of intrinsic SnO2 is investigated experimentally by transmission spectroscopy measurements and their roughness in the light of the atomic force microscopy (AFM) measurements. The sample films were prepared by spray pyrolysis deposition method onto glass substrate considering different thickness layers. We found for SnO2 qualitatively good agreement of the calculated optical band-gap energy as well as the optical absorption with the experimental results.

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