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  • 1. Babonas, G. J.
    et al.
    Reza, A.
    Simkiene, I.
    Sabataityte, J.
    Baran, M.
    Szymczak, R.
    Karlsson, Ulf O.
    KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
    Suchodolski, Arturas
    KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
    Optical properties of Fe-doped silica films on Si2006In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 252, no 15, p. 5391-5394Article in journal (Refereed)
    Abstract [en]

    Optical properties of Fe-doped silica films on Si were investigated by ellipsometric technique in the region 1-5 eV. Samples were produced by sol-gel method. Precursors were prepared by mixing tetraethoxysilane (TEOS) solution in ethanol and water with aqueous solution of Fe-chloride or Fe-acetate. The coating solution was deposited on Si substrates by spin on technique. The size of Fe-containing nanometric-sized particles depended on technology and varied from 20 to 100 nm. Optical response of complex hybrid samples SiO2:Fe/Si was interpreted in a multi-layer model. In the inverse problem, the Maxwell equations were solved by transfer matrix technique. Dielectric function of Fe-doped silica layers was calculated in the model of effective media. Analysis of optical data has shown that various Fe-oxides formed. Experimental data for films obtained from precursors with Fe-acetate and annealed in hydrogen were well described by the model calculations taking into account a small contribution 1-5% of metal Fe imbedded in silica. The Fe/Fe-O contribution to optical response increased for samples grown from FeCl3-precursor. Ellipsometric data for Fe-doped silica films on Si were interpreted taking into account the structural AFM studies as well as the results of magnetic measurements.

  • 2.
    Hallén, Anders.
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Suchodolskis, Arturas
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Österman, John
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Abtin, L.
    Linnarsson, Margareta K.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Annealing of Al implanted 4H silicon carbide2006In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T126, p. 37-40Article in journal (Refereed)
    Abstract [en]

    Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1 x 10(20) cm(-3). These samples were then annealed at temperatures between 1500 and 1950 degrees C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 degrees C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles.

  • 3. Karpus, V.
    et al.
    Suchodolskis, Arturas
    KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
    Karlsson, Ulf O.
    KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
    Lay, G.
    Giovanelli, L.
    Assmus, W.
    Bruhne, S.
    Uhrig, E.
    Mg 2p shallow core-level and local atomic structure of i-ZnMgRE quasicrystals2006In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 252, no 15, p. 5411-5414Article in journal (Refereed)
    Abstract [en]

    We present a detailed analysis of the Mg 2p shallow core-levels measured on icosahedral single-grain ZnMgY, ZnMgHo, and ZnMgEr quasicrystals during a photoelectron microscopy study. The synchrotron radiation photoemission measurements were performed on in situ cleaved samples at a pressure of 10(-10) mbar and at low temperature, typically 90-150 K. The Mg 2p photoemission lines are essentially broadened as compared to those of the Mg 2p spin-orbit doublet recorded on the Zn2Mg crystalline Laves phase. The broadening is associated to the coordination shifts of the Mg 2p level due to the inequivalent magnesium sites in the quasicrystalline lattice. The coordination shifts are calculated on the basis of i-ZnMg(Ho, Y) atomic structure data, recently determined from the pair distribution function analysis. The coordination shifts obtained are up to 0.2 eV. The Mg 2p experimental spectral intensity is nicely reproduced by a superposition of coordination-shifted Mg 2p spin-orbit doublets.

  • 4.
    Suchodolskis, Arturas
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hallén, Anders.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Gran, J.
    Hansen, T. E.
    Karlsson, Ulf O.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Scanning spreading resistance microscopy of shallow doping profiles in silicon2006In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 253, no 02-jan, p. 141-144Article in journal (Refereed)
    Abstract [en]

    We demonstrate the application of scanning spreading resistance microscopy (SSRM) for characterization of shallow highly-conductive layers formed by boron implantation of lowly doped n-type silicon substrate followed by a post-implantation annealing. The electrically active dopant concentration versus depth was obtained from a cross-section of freshly cleaved samples where the Si-surface could be clearly distinguished by depositing a SiO2-layer before cleavage. To quantify free carrier concentration we calibrated our data against samples with implanted/annealed boron profiles established by secondary ion mass spectrometry (SIMS). A good fit of SSRM and SIMS data is possible for free carrier concentrations lower than 10(20) cm(-3), but for higher concentrations there is a discrepancy indicating an incomplete activation of the boron.

  • 5.
    Suchodolskis, Arturas
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics.
    Karpus, V.
    Kanski, J.
    Ilver, L.
    Göthelid, Mats
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Karlsson, Ulf O.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Photoemission studies of Mg and Rb layers on Zn(0001)2004In: Journal of Electron Spectroscopy and Related Phenomena, ISSN 0368-2048, E-ISSN 1873-2526, Vol. 137-40, p. 189-192Article in journal (Refereed)
    Abstract [en]

    The electronic structure of the clean Zn(0 0 0 1) surface is studied by angle resolved photoemission. An earlier detected surface state at the surface Brillouin zone centre is confirmed and a new surface state is found at the surface Brilluoin zone boundary. The surface electronic structure of Zn is found to be similar to the that of Cd. Evaporation of thin films of Mg and Rb onto the Zn(0 0 0 1) surface quenches the emission from both surface states and reduces the intensity of the bulk related structures.

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