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  • 1.
    Hamawandi, Bejan
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Noroozi, Mohammad
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Jayakumar, Ganesh
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ergül, Adem
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Zahmatkesh, Katayoun
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Toprak, Muhammet S.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Radamson, Henry H.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Electrical properties of sub-100 nm SiGe nanowires2016In: Journal of semiconductors, Vol. 37, no 10Article in journal (Refereed)
    Abstract [en]

    In this study, the electrical properties of SiGe nanowires in terms of process and fabrication integrity, measurement reliability, width scaling, and doping levels were investigated. Nanowires were fabricated on SiGe-on oxide (SGOI) wafers with thickness of 52 nm and Ge content of 47%. The first group of SiGe wires was initially formed by using conventional I-line lithography and then their size was longitudinally reduced by cutting with a focused ion beam (FIB) to any desired nanometer range down to 60 nm. The other nanowires group was manufactured directly to a chosen nanometer level by using sidewall transfer lithography (STL). It has been shown that the FIB fabrication process allows manipulation of the line width and doping level of nanowires using Ga atoms. The resistance of wires thinned by FIB was 10 times lower than STL wires which shows the possible dependency of electrical behavior on fabrication method.

  • 2.
    Noroozi, Mohammad
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Hamawandi, Bejan
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Jayakumar, Ganesh
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Zahmatkesh, Katayoun
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Radamson, Henry H.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Toprak, Muhammet S.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    A comparison of power factor in n and p-type SiGe nanowires for thermoelectric applications2017In: Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, E-ISSN 1533-4899, Vol. 71, no 3, p. 1622-1626Article in journal (Refereed)
    Abstract [en]

    This work presents the thermoelectric properties of n- and p-type doped SiGe nanowires and shows the potential to generate electricity from heat difference over nanowires. The Si0.74Ge0.26 layers were grown by reduced pressure chemical vapor deposition technique on silicon on insulator and were condensed to the final Si0.53Ge0.47 layer with thickness of 52 nm. The nanowires were formed by using sidewall transfer lithography (STL) technique at a targeted width of 60 nm. A high volume of NWs is produced per wafer in a time efficient manner and with high quality using this technique. The results demonstrate high Seebeck coefficient in both n- and p-types SiGe nanowires. N-type SiGe nanowires show significantly higher Seebeck coefficient and power factor compared to p-type SiGe nanowires near room temperature. These results are promising and the devised STL technique may pave the way to apply a Si compatible process for manufacturing SiGe-based TE modules for industrial applications.

  • 3.
    Noroozi, Mohammad
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Jayakumar, Ganesh
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Lu, Jun
    Mensi, Mounir
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Hamawandi, Bejan
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Zahmatkesh, Katayoun
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Tafti, Mohsen. Y
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Marcinkevičius, Saulius
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Hultman, Lars
    Ergül, Adem
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Ikonic, Zoran
    Toprak, Muhammet S.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Functional Materials, FNM.
    Radamson, Henry H.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Significant Improvement of Thermoelectric Efficiency in SiGe NanowiresArticle in journal (Refereed)
    Abstract [en]

    The thermoelectric (TE) properties of SiGe nanowires (NWs) with width of 60 nm in a back-gate configuration have been studied experimentally and theoretically. The carrier transport in NWs was modified by biasing voltage to the gate for different temperatures. The original wafers were SiGe-on-oxide (SGOI), which were formed through condensation of SiGe on Si-on-oxide wafers (SOI).  The power factor of SiGe NWs was enhanced by a factor of >2 in comparison with SiGe bulk material over a temperature range of 273 K to 450 K. This enhancement is mainly attributed to the energy filtering of carriers in SiGe NWs which were introduced by the roughness in the shape of NWs, non-uniform SiGe composition and the induced defects during the manufacturing of SGOI wafers or processing of NWs. These defects create potential barriers which may significantly enhance the Seebeck coefficient, while the conductivity can be boosted by tuning the back-gate bias.

  • 4.
    Noroozi, Mohammad
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics. Linköping University, Sverige.
    Jayakumar, Ganesh
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Zahmatkesh, Katayoun
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Lu, J.
    Hultman, L.
    Mensi, Mounir
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Marcinkevicius, Saulius
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Hamawandi, Bejan
    KTH, School of Engineering Sciences (SCI), Applied Physics, Biomedical and X-ray Physics.
    Yakhshi Tafti, Mohsen
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Ergül, Adem
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Ikonic, Z.
    Toprak, Muhammet
    KTH, School of Engineering Sciences (SCI), Applied Physics, Biomedical and X-ray Physics.
    Radamson, Henry H.
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Unprecedented thermoelectric power factor in SiGe nanowires field-effect transistors2017In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 6, no 9, p. Q114-Q119Article in journal (Refereed)
    Abstract [en]

    In this work, a novel CMOS compatible process for Si-based materials has been presented to form SiGe nanowires (NWs) on SiGe On Insulator (SGOI) wafers with unprecedented thermoelectric (TE) power factor (PF). The TE properties of SiGe NWs were characterized in a back-gate configuration and a physical model was applied to explain the experimental data. The carrier transport in NWs was modified by biasing voltage to the gate at different temperatures. The PF of SiGe NWs was enhanced by a factor of >2 in comparison with bulk SiGe over the temperature range of 273 K to 450 K. This enhancement is mainly attributed to the energy filtering of carriers in SiGe NWs, which were introduced by imperfections and defects created during condensation process to form SiGe layer or in NWs during the processing of NWs.

1 - 4 of 4
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