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  • 1.
    Chaourani, Panagiotis
    et al.
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Hellström, Per-Erik
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Rodriguez, Saul
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Onet, Raul
    KTH, School of Information and Communication Technology (ICT), Electronics.
    Rusu, Ana
    KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
    Enabling Area Efficient RF ICs through Monolithic 3D Integration2017In: Proceedings of the 2017 Design, Automation and Test in Europe, DATE 2017, Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 610-613, article id 7927059Conference paper (Refereed)
    Abstract [en]

    The Monolithic 3D (M3D) integration technology has emerged as a promising alternative to dimensional scaling thanks to the unprecedented integration density capabilities and the low interconnect parasitics that it offers. In order to support technological investigations and enable future M3D circuits, M3D design methodologies, flows and tools are essential. Prospective M3D digital applications have attracted a lot of scientific interest. This paper identifies the potential of M3D RF/analog circuits and presents the first attempt to demonstrate such circuits. Towards this, a M3D custom design platform, which is fully compatible with commercial design tools, is proposed and validated. The design platform includes process characteristics, device models, LVS and DRC rules and a parasitic extraction flow. The envisioned M3D structure is built on a commercial CMOS process that serves as the bottom tier, whereas a SOI process is used as top tier. To validate the proposed design flow and to investigate the potential of M3D RF/analog circuits, a RF front-end design for Zig-Bee WPAN applications is used as case-study. The M3D RF front-end circuit achieves 35.5 % area reduction, while showing similar performance with the original 2D circuit.

  • 2.
    Onet, Raul
    et al.
    KTH, School of Information and Communication Technology (ICT). Tech Univ Cluj Napoca, Cluj Napoca 400027, Romania..
    Rusu, Ana
    KTH, School of Information and Communication Technology (ICT).
    Rodriguez, Saul
    KTH, School of Information and Communication Technology (ICT).
    High-Purity and Wide-Range Signal Generator for Bioimpedance Spectroscopy2018In: IEEE Transactions on Circuits and Systems - II - Express Briefs, ISSN 1549-7747, E-ISSN 1558-3791, Vol. 65, no 12, p. 1884-1888Article in journal (Refereed)
    Abstract [en]

    This brief presents an integrated high-purity current signal generator (SG), part of a bioimpedance spectroscopy system that performs measurements in the frequency range from 1 kHz to 2 MHz, and it is able to measure bioimpedance values from 100 Omega to 1 M Omega. The SG is implemented in a 0.18-mu m CMOS process, it is powered by a single 1.8 V voltage source, and occupies a total area of 1.62 mm(2). It is able to generate single-frequency signals from 1 kHz to 2 MHz in 12 steps logarithmically spaced. High signal purity is achieved by using a second-order low-pass filter, with a bandwidth that can be programmed from 4 kHz to 8 MHz, in 12 points logarithmically spaced. The SG's power consumption varies from 750 mu W, at the lowest frequencies and gain, to 2.06 mW at the highest frequencies and gain. The output current levels can be modified from 130 nA up to 10 mu A in five programmable steps (9.5 dB per step). The SG achieves a spurious-free dynamic range larger than 40 dB while covering almost three decades in frequency. Such performance enables measurements with errors below 1%, as it is required for accurate bioimpedance measurements in many medical applications.

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