Change search
Refine search result
12 1 - 50 of 59
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1. Akram, N. M.
    et al.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Marcinkevicius, Saulius
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Experimental evaluation of carrier transport, gain, T0 and chirp of 1.55 mu;m MQW structures with different barrier compositions2005In: Optical Communication, 2005. ECOC 2005. 31st European Conference on, 2005, Vol. 2, p. 297-298Conference paper (Refereed)
    Abstract [en]

    Direct carrier transport measurements were performed for different InGaAsP/InGaAlAs MQW test structures. Shallow InGaAlAs barrier QW showed faster carrier transport. Semi-insulating regrown FP lasers with InGaAlAs barrier QW showed improved high temperature operation, modal gain, differential modal gain and chirp.

  • 2.
    Akram, Nadeem
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Berrier, Audrey
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Experimental characterization of high-speed 1.55 mu m buried heterostructure InGaAsP/InGaAlAs quantum-well lasers2009In: Journal of the Optical Society of America. B, Optical physics, ISSN 0740-3224, E-ISSN 1520-8540, Vol. 26, no 2, p. 318-327Article in journal (Refereed)
    Abstract [en]

    Detailed experimental characterization is performed for 1550 nm semi-insulating regrown buried heterostructure Fabry-Perot (FP) lasers having 20 InGaAsP/InGaAlAs strain-balanced quantum wells (QWs) in the active region. Light-current-voltage performance, electrical impedance, small-signal response below and above threshold, amplified spontaneous emission spectrum below threshold and relative intensity noise spectrum are measured. Different laser parameters such as external differential quantum efficiency eta(d), background optical loss alpha(i), K-factor, D-factor, characteristic temperature T-0, differential gain dg/dn, gain-compression factor epsilon, carrier density versus current, differential carrier lifetime tau(d), optical gain spectrum below threshold, and chirp parameter alpha are extracted from these measurements. The FP lasers exhibited a high T-0 (78-86.5 degrees C) and very high-resonance frequency (23.7 GHz). The results indicate that appropriately designed lasers having a large number of InGaAsP well/InGaAlAs barrier QWs with shallow valence-band discontinuity can be useful for un-cooled high-speed direct-modulated laser applications.

  • 3.
    Akram, Nadeem
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berrier, Audrey
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    High-Speed Performance of 1.55 µm Buried Hetero-Structure Lasers with 20 InGaAsP/InGaAlAs Quantum-Wells2006In: 2006 European Conference on Optical Communications Proceedings, ECOC 2006, IEEE , 2006, p. 1-2Conference paper (Refereed)
    Abstract [en]

    1550 nm re-grown FP lasers having 20 InGaAsP/InGaAlAs strain-balanced QWs exhibit low threshold current density, high T0 (78.0 #x000B0;C) and high resonance frequency (24 GHz) indicating that a large number of shallow barrier QWs are attractive for un-cooled high-speed direct-modulation applications.

  • 4.
    Akram, Nadeem
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Marcinkevičius, Saulius
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    The effect of barrier composition on the vertical carrier transport and lasing properties of 1.55-mu m multiple quantum-well structures2006In: IEEE Journal of Quantum Electronics, ISSN 0018-9197, E-ISSN 1558-1713, Vol. 42, no 7, p. 713-714Article in journal (Refereed)
    Abstract [en]

    In this paper, the effect of barrier bandgap and composition on the optical performance of 1.55-mu m InGaAsP/In-GaAsP and InGaAsP/InGaAlAs multiple quantum-well structures and Fabry-Perot lasers is evaluated experimentally. Direct vertical carrier transport measurements were performed through strain-compensated multiple quantum-well (MQW) test structures using femto-second laser pulse excitation and time-resolved photoluminescence up-conversion method. MQW test structures were grown with different barrier composition (InGaAsP and InGaAlAs) and barrier bandgap (varied from lambda(g) = 1440 to 1260 nm) having different conduction band Delta E-c and valence band discontinuity Delta E-v, while keeping the same InGaAsP well composition for all the structures. The ambipolar carrier transport was found to be faster in the structures with lower valence band discontinuity Delta E-v. Regrown semi-insulating buried heterostructure Fabry-Perot (SIBH-FP) lasers were fabricated from similar QWs and their static light-current-voltage characteristics (including optical gain and chirp spectra below threshold) and thermal characteristics were measured. Lasers with InGaAlAs barrier showed improved high-temperature operation, higher optical gain, higher differential gain, and lower chirp, making them suitable candidates for high-bandwidth directly modulated uncooled laser applications.

  • 5.
    Akram, Nadeem
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Silfvenius, Christofer
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Design optimization of InGaAsP-InGaAlAs 1.55 mu;m strain-compensated MQW lasers for direct modulation applications2004In: Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on, IEEE , 2004, p. 418-421Conference paper (Refereed)
    Abstract [en]

    A comprehensive simulation study of InGaAsP (well)/InGaAlAs(barrier) 1.55 mu;m strain-compensated MQW lasers is presented. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and strain of the barriers and p-doping in the active region. Some preliminary results are also presented for the manufactured lasers using these QWs indicating a good material platform.

  • 6. Bernabé, S.
    et al.
    Stevens, R.
    Volpert, M.
    Hamelin, R.
    Rossat, C.
    Berger, F.
    Lombard, L.
    Kopp, C.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Sundgren, Petrus
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Highly integrated VCSEL-based 10Gb/s miniature optical sub-assembly2005In: Proceedings - Electronic Components and Technology Conference, Lake Buena Vista, FL: IEEE , 2005, Vol. 2, p. 1333-1338Conference paper (Refereed)
    Abstract [en]

    In order to fit with the present and future needs of the Datacom transceiver market, newly designed high rate transmitter optical subassemblies (TOSAs) have to be compact, low cost and compatible with mass production. We propose here an innovative design strategy that reaches all these targets by integrating a 10Gbps 850nmVCSEL laser diode and its laser driver with other functionalities (e.g. power monitoring and thermal monitoring) in a small form factor package. Taking advantages of the optical properties of the VCSEL and using flip-chip techniques, the transmitter exhibits excellent hyperfrequency performances and compatibility with mass production due to the use of collective manufacturing technologies and passive optical alignment. This versatile approach is also applicable to high rate receivers, parallel optics emitters, and singlemode low cost transmitter integrating long wavelength VCSELs.

  • 7.
    Campi, Roberta
    et al.
    Turin Technology Center.
    Berggren, Jesper
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Buccieri, Aurelio
    Turin Technology Center.
    Gotta, Paola
    Turin Technology Center.
    Landgren, Gunnar
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Sarocchi, Davide
    Turin Technology Center.
    Valenti, P.
    Turin Technology Center.
    Lateral confinement optimisation of 1300 nm InGaAlAsP/InGaAsP Fabry-Perot lasers2003In: EWMOVPEX: 10th European Workshop on Metalorganic Vapour Phase Epitaxy, 2003Conference paper (Refereed)
  • 8.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Sundgren, Petrus
    Marcks von Würtemberg, Rikard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    1.3 um InGaAs VCSELs: Influence of the Large Gain-Cavity Detuning on the Modulation and Static Performance2004In: Proc. of 30th European Conference on Optical Communication 2004, 2004Conference paper (Refereed)
  • 9.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Marcks von Würtemberg, Rickard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Mogg, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Sundgren, Petrus
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Single-mode 1.27 μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics2005In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 21, p. 211109-1-211109-3Article in journal (Refereed)
    Abstract [en]

    The dynamic performance of InGaAs/GaAs 1.27 μ m single-mode vertical cavity surface emitting lasers (VCSELs) is presented. In order to reach such a long wavelength, the devices utilize highly strained double-quantum wells and a large detuning between the material gain peak and cavity resonance. It is found that the large detuning improves the temperature stability of both static and modulation characteristics. A resonance frequency of 7.8-9.5 GHz and optical power of 0.30 mW in fiber was maintained throughout the investigated temperature range of 20-90 ° C. The intrinsic response of the device suggests that long-wavelength InGaAs/GaAs VCSELs have the potential to be used as low cost uncooled optical transmitters at 10 Gbit/s. © 2005 American Institute of Physics. © 2005 American Institute of Physics.

  • 10.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Berggren, Jesper
    Yu, X.
    KTH.
    Marcks Von Würtemberg, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Dynamic properties of electrically p-n confined, epitaxially regrown 1.27 μm InGaAs single-mode vertical-cavity surface-emitting lasers2009In: IET optoelectronics, ISSN 1751-8768, Vol. 3, no 3, p. 163-167Article in journal (Refereed)
    Abstract [en]

    The dynamic performance including chirp measurements of 1.27 mu m single-mode InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a large gain-cavity offset is presented. The VCSELs are based on a novel p-n confinement structure with selective area epitaxial regrowth. A resonance frequency of 9.11 GHz, a slope efficiency of 0.25 W/A and an alpha-factor of 5.7 were measured. The modulation bandwidth is limited by electrical parasitics. Eye diagrams at 5 Gb/s with 7 dB extinction ratio and Q-factor around 5 were obtained. The results are compared with the performance of oxide-confined VCSELs with similar active layer and negative gain-cavity detuning.

  • 11. Chang, Tzu-Hsuan
    et al.
    Fan, Wenjuan
    Liu, Dong
    Xia, Zhenyang
    Ma, Zhenqiang
    Liu, Shihchia
    Menon, Laxmy
    Yang, Hongjun
    Zhou, Weidong
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT).
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Selective release of InP heterostructures from InP substrates2016In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 34, no 4, article id 041229Article in journal (Refereed)
    Abstract [en]

    The authors report here a method of protecting the sidewall for the selective release of InGaAsP quantum-well (QW) heterostructure from InP substrates. An intact sidewall secured by SiO2 was demonstrated during the sacrificial layer selective etching, resulting in the suspended InGaAsP QW membranes which were later transferred to the Si substrate with polydimethylsiloxane stamp. The quality of the transferred InGaAsP QW membranes has been validated through photoluminescence and EL measurements. This approach could extend to arbitrary targeting substrate in numerous photonics and electronics applications.

  • 12. Chuwongin, S.
    et al.
    Yang, H.
    Seo, J. -H
    Zhao, D.
    Shuai, Y.
    Yang, W.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hammar, M.
    Ma, Z.
    Zhou, W.
    Nanomembrane transfer printing for MR-VCSELs on silicon2012In: 2012 IEEE Photonics Conference, IPC 2012, IEEE , 2012, p. 951-952Conference paper (Refereed)
    Abstract [en]

    The creation of silicon based light sources has been a major research and development effort world-wide. Among various approaches to silicon based light sources reported thus far, the hybrid gain-medium approach (especially integrated with group III-V materials) seems to be the most promising one due to its higher efficiencies than any others. [1-3]

  • 13. Fan, W.
    et al.
    Zhao, D.
    Chuwongin, S.
    Seo, J. -H
    Yang, H.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ma, Z.
    Zhou, W.
    Electrically-pumped membrane-reflector surface-emitters on silicon2013In: 2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013, IEEE , 2013, p. 19-20Conference paper (Refereed)
    Abstract [en]

    We report here electrically-pumped membrane reflector surface-emitters on silicon based on transferred InGaAsP QW structures sandwiched in between two single-layer Fano resonance photonic crystal membrane reflectors on silicon substrate.

  • 14. Fan, W.
    et al.
    Zhao, D.
    Chuwongin, S.
    Seo, J. -H
    Yang, H.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ma, Z.
    Zhou, W.
    Fabrication of electrically-pumped resonance-cavity membrane-reflector surface-emitters on silicon2013In: 2013 IEEE Photonics Conference (IPC), 2013, p. 643-644Conference paper (Refereed)
    Abstract [en]

    Various lasers and light sources on Si via heterogeneous integration of Si/III-V have been reported based on direct growth on Si [1] or wafer bonding technology [2-4]. We reported earlier optically-pumped Si membrane-reflector vertical-cavity surface-emitting lasers (MRVCSELs) fabricated by low-temperature membrane transfer printing processes [5, 6]. Here we report electrically-pumped devices based on an intra-cavity contact configuration.

  • 15. Gilet, Ph.
    et al.
    Pougeoise, E.
    Grenouillet, L.
    Grosse, Ph.
    Olivier, N.
    Poncet, S.
    Chelnokov, A.
    Gerard, J. M.
    Stevens, R.
    Hamelin, R.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Sundgren, Petrus
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    1.3 μm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots- Three candidates as active material2007In: Vertical - Cavity Surface - Emitting Lasers XI, San Jose, CA, 2007, Vol. 6484, p. F4840-F4840Conference paper (Refereed)
    Abstract [en]

    In this article, we report our results on 1.3ÎŒm VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GalnNAs/GaAs (B) multiple quantum wells (MQW) or InAs/GaAs (C) quantum dots (QD). Conventional epitaxial structures grown respectively by Metal Organic Vapour Phase Epitaxy (MOVPE), Molecular Beam Epitaxy (MBE) and MBE, contain rully doped GaAs/AlGaAs DBRs. All three epilayers are processed in the same way. Current and optical confinement are realized by selective wet oxidation. Circular apertures from 2 ÎŒm to 16 ÎŒm diameters are defined. At room temperature and in continuous wave operation, all three systems exhibit lasing operation at wavelengths above 1 275nm and reached 1 300nm for material (A). Typical threshold currents are in the range [1-10]mA and are strongly dependent firstly on oxide diameter and secondly on temperature. Room temperature cw maximum output power corresponds respectively to 1.77mW, 0.5mW and 0.6mW. By increasing driving current, multimode operation occurs at different level depending on the oxide diameter. In case (A), non conventional modal behaviors will be presented and explained by the presence of specific oxide modes. Thermal behaviors of the different devices have been compared. In case (A) and (C) we obtain a negative T0. We will conclude on the different active materials in terms of performances with respect to 1300nm VCSEL applications.

  • 16.
    Gustafsson, Oscar
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ekenberg, Ulf
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Hallén, Anders
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Höglund, L.
    Karim, A.
    Noharet, B.
    Wang, Q.
    Gromov, A.
    Almqvist, S.
    Zhang, A.
    Acreo, Sweden.
    Junique, S.
    Andersson, J. Y.
    Asplund, C.
    von Würtemberg, R. Marcks
    Malm, H.
    Martijn, H.
    Long-wavelength infrared quantum-dot based interband photodetectors2011In: Infrared physics & technology, ISSN 1350-4495, E-ISSN 1879-0275, Vol. 54, no 3, p. 287-291Article in journal (Refereed)
    Abstract [en]

    We report on the design and fabrication of (Al)GaAs(Sb)/InAs tensile strained quantum-dot (QD) based detector material for thermal infrared imaging applications in the long-wavelength infrared (LWIR) regime. The detection is based on transitions between confined dot states and continuum states in a type-II band lineup, and we therefore refer to it as a dot-to-bulk (D2B) infrared photodetector with expected benefits including long carrier lifetime due to the type-II band alignment, suppressed Shockley-Read-Hall generation-recombination due to the relatively large-bandgap matrix material, inhibited Auger recombination processes due to the tensile strain and epitaxial simplicity. Metal-organic vapor-phase epitaxy was used to grow multiple (Al)GaAs(Sb) QD layers on InAs substrates at different QD nominal thicknesses, compositions, doping conditions and multilayer periods, and the material was characterized using atomic force and transmission electron microscopy, and Fourier-transform infrared absorption spectroscopy. Dot densities up to 1 x 10(11) cm(-2), 1 x 10(12) cm(-2) and 3 x 10(10) cm(-2) were measured for GaAs, AlGaAs and GaAsSb QDs, respectively. Strong absorption in GaAs, AlGaAs and GaAsSb multilayer QD samples was observed in the wavelength range 6-12 mu m. From the wavelength shift in the spectral absorption for samples with varying QD thickness and composition it is believed that the absorption is due to an intra- valance band transition. From this it is possible to estimate the type-II inter-band transition wavelength, thereby suggesting that (Al)GaAs(Sb) QD/InAs heterostructures are suitable candidates for LWIR detection and imaging.

  • 17.
    Gustafsson, Oscar
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Höglund, L.
    Berggren, Jespe
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    GaSb/Ga0.51In0.49P self assembled quantum dots grown by MOVPE2009In: Proceedings from EW-MOVPE XIII, 2009, Vol. 7298, p. 273-276Conference paper (Refereed)
  • 18.
    Gustafsson, Oscar
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Karim, Amir
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Wang, Qin
    Reuterskiöld-Hedlund, Carl
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ernerheim-Jokumsen, Christopher
    KTH.
    Soldemo, Markus
    KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
    Weissenrieder, Jonas
    KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
    Persson, Sirpa
    Almqvist, Susanne
    Ekenberg, Ulf
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Noharet, Bertrand
    Asplund, Carl
    Göthelid, Mats
    KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
    Andersson, Jan Y.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures2012In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 20, no 19, p. 21264-21271Article in journal (Refereed)
    Abstract [en]

    InSb-based quantum dots grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs substrates are studied for use as the active material in interband photon detectors. Long-wavelength infrared (LWIR) photoluminescence is demonstrated with peak emission at 8.5 mu m and photoresponse, interpreted to originate from type-II interband transitions in a p-i-n photodiode, was measured up to 6 mu m, both at 80 K. The possibilities and benefits of operation in the LWIR range (8-12 mu m) are discussed and the results suggest that InSb-based quantum dot structures can be suitable candidates for photon detection in the LWIR regime.

  • 19.
    Gustafsson, Oscar
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Karim, Amir
    Wang, Qin
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Asplund, Carl
    Andersson, Jan Y.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots2013In: Infrared physics & technology, ISSN 1350-4495, E-ISSN 1879-0275, Vol. 59, p. 89-92Article in journal (Refereed)
    Abstract [en]

    We study the growth of self-assembled InGaSb/InAs quantum dots (QDs) and investigate how gallium can be used to reduce the optical transition energy in the InSb QD system. InGaSb QDs were grown on InAs (0 0 1) substrates by metal-organic vapor-phase epitaxy (MOVPE) and the material was characterized by photoluminescence (PL) measurements. A PL peak wavelength is demonstrated beyond 8 μm at 77 K, which is significantly longer than what has been reported for InSb QDs. The results suggest that InGaSb QDs can be grown at a larger size than InSb QDs leading to reduced confinement in the QDs.

  • 20.
    Hammar, Mattias
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    von Würtemberg, Rickard Marcks
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Sundgren, Petrus
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Larsson, A.
    Söderberg, E.
    Modh, P.
    Gustavsson, J.
    Ghisoni, M.
    Chitica, N.
    1.3-mu m InGaAs vertical-cavity surface-emitting lasers2005In: 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, p. 396-397Conference paper (Refereed)
    Abstract [en]

    We report on the fabrication and performance of N-free InGaAs/GaAs 1.3-mu m range vertical-cavity surface-emitting lasers (VCSELs). Using optimized quantum-well (QW) growth conditions in combination with negative gain-cavity tuning, high-performance VCSELs with emission wavelength up to 1300 nm are realized. The performance figures include mA-range threshold currents, mW-range singlemode output power, continuous-wave operation up to 140 degrees C and 10 Gbit/s data transmission.

  • 21.
    Hammar, Mattias
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Xiang, Yu
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Yu, Xingang
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zabel, Thomas
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Akram, M. N.
    Room-temperature operation of 980-nm transistor-vertical-cavity surface-emitting lasers2013In: 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013, IEEE , 2013, p. 141-142Conference paper (Refereed)
    Abstract [en]

    We report on the design, fabrication and characterization of pnp-type 980-nm transistor-vertical-cavity surface-emitting lasers (T-VCSELs). Using an epitaxial regrowth process and a triple-intracavity current injection scheme we demonstrate static performance levels quite comparable to those of conventional VCSELs, including sub-mA threshold base current, mW-range output power and continuous-wave operation at least up to 50°C.

  • 22. Kopp, C.
    et al.
    Grosse, P.
    Gilet, P.
    Olivier, N.
    Chelnokov, A.
    Fulbert, L.
    Bernabé, S.
    Rossat, C.
    Hamelin, R.
    Hamberg, I.
    Lundqvist, L.
    Chitica, N.
    Hammar, M.
    Berggren, Jesper
    Junique, S.
    Wang, Q.
    Almqvist, S.
    Sillans, C.
    Very compact FTTH Diplexer design using advanced wafer level fabrication methods2008In: MICRO-OPTICS 2008  : Proceedings of SPIE - The International Society for Optical Engineering, Strasbourg, 2008, Vol. 6992Conference paper (Refereed)
    Abstract [en]

    FTTH networks require implementing a diplexer at each user termination. According to most of the standards, this diplexer detects a download signal beam at 1.49ÎŒm and emits an upload signal beam at 1.31ÎŒm on the same single mode fibre. Both signals exhibit datarate speed below 2.5Gbps. Today, most of the diplexers are obtained by actively aligning a set of individual optoelectronic components and micro-optics. However, new manufacturing solutions satisfying very low cost and mass production capability requirements of this market would help to speed the massive spreading of this technology. In this paper, we present an original packaging design to manufacture Diplexer Optical Sub-Assembly for FTTH application. A dual photodiode is stacked over a VCSEL and detects both the download signal beam at 1.49ÎŒm passing through the laser and one part of the upload signal beam at 1.31ÎŒm for monitoring. To satisfy this approach, an innovative VCSEL has been designed to have a very high transmission at 1.49ÎŒm. All these components are mounted on a very small circuit board on glass including also integrated circuits such as transimpedance amplifier. So, the device combines advanced optoelectronic components and highly integrated Multi-Chip-Module on glass approach using collective wafer-level assembling technologies. For the single mode fibre optical coupling, active and passive alignment solutions are considered.

  • 23.
    Lourdudoss, Sebastian
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Barrios, C. A.
    Hakkarainen, Teppo
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Berrier, Audrey
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Aubert, Amandine
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Broeke, R. G.
    Cao, J.
    Chubun, N.
    Seo, S. -W
    Baek, J. -H
    Aihara, K.
    Pharn, Anh-Vu
    Ben Yoo, S. J.
    Avella, M.
    Jimenez, J.
    Heteroepitaxy and selective epitaxy for discrete and integrated devices2006In: 2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES, NEW YORK: IEEE , 2006, p. 309-311Conference paper (Refereed)
    Abstract [en]

    We present first results on heteroepitaxy of InP on silicon on insulator (SOI). We also demonstrate InP nanopillar fabrication by means of selective epitaxy. Selective epitaxy is also exploited to fabricate advanced photonic integrated devices for Optical Code Division Multiplex Access (OCDMA) networking applications.

  • 24.
    Marcks von Würtemberg, Rickard
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Dainese, Matteo
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    High-power InGaAs/GaAs 1.3 mu m VCSELs based on novel electrical confinement scheme (vol 44, pg 414, 2008)2008In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 44, no 13Article in journal (Refereed)
  • 25.
    Marcks von Würtemberg, Rickard
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Dainese, Matteo
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    High-power InGaAs/GaAs 1.3 μm VCSELs based on novel electrical confinement scheme2008In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 44, no 6, p. 414-416Article in journal (Refereed)
    Abstract [en]

    Reported are 1.3 mu m InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a novel electrical confinement scheme based on lithographic definition and selective area epitaxial regrowth in the cavity region. More than 6 mW of output power with a record high differential efficiency of more than 70% is emitted from 10 mu m large devices.

  • 26.
    Marcks von Würtemberg, Rickard
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Sundgren, Petrus
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Ghisoni, Marco
    Zarlink Semiconductor AB.
    Oscarsson, Vilhelm
    Zarlink Semiconductor AB.
    Ödling, Elsy
    Zarlink Semiconductor AB.
    Malmquist, Jessica
    Zarlink Semiconductor AB.
    Fabrication and performance of 1.3-μm vertical cavity surface emitting lasers with InGaAs quantum well active regions grown on GaAs substrates2004In: Proceedings of SPIE, the International Society for Optical Engineering, ISSN 0277-786X, E-ISSN 1996-756X, Vol. 5443, p. 229-239Article in journal (Refereed)
    Abstract [en]

    We describe the development of long-wavelength InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs). Using highly strained double-quantum wells (DQWs) in combination with negative gain-cavity detuning we have been able to realise such VCSELs with emission wavelength up to 1300 nm. High-performance device characteristics include mW-range output power, mA-range threshold currents, 10 Gbit/s data transmission and very good temperature stability with continuous-wave operation up to at least 140degreesC. Singlemode emission is realised using an integrated mode filter consisting of a patterned silicon layer on the out-coupling mirror surface, yielding output power and threshold currents for 1270-nm devices of 1.2 - 0.5 mW and 2.3 - 0.6 mA, respectively, over a temperature interval of 10 - 140degreesC. Multimode devices have been found to deliver more than 2 mW at 1290 nm. Preliminary lifetime measurements do not reveal any intrinsic reliability problems related to the highly strained quantum wells.

  • 27.
    Marcks von Würtemberg, Rickard
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Sundgren, Petrus
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Ghisoni, Marco
    Ödling, Elsy
    Oscarsson, Vilhelm
    Malmquist, Jessica
    1.3 μm InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation2004In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 85, no 21, p. 4851-4853Article in journal (Refereed)
    Abstract [en]

    We report on the performance and analysis of 1.3 mum range InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with an integrated mode filter consisting of a patterned silicon layer on the top distributer Bragg reflector. In this way, 1 mW of single mode power is obtained from a device with a wavelength of 1265 nm and a threshold current of 2.6 mA at room temperature. An effective index model is used to extract the internal and external losses of the VCSEL structure and to predict the modal losses with and without mode filter, thereby providing a useful design tool for single mode VCSELs.

  • 28.
    Marcks von Würtemberg, Rickard
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Yu, Xingang
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Performance optimisation of epitaxially regrown 1.3-μm vertical-cavity surface-emitting lasers2009In: IET Optoelectronics, ISSN 1751-8768, Vol. 3, no 2, p. 112-121Article in journal (Refereed)
    Abstract [en]

    A number of GaAs-based long-wavelength, vertical-cavity, surface-emitting laser structures with optical and electrical confinement based on selective area epitaxy have been fabricated and evaluated. The influence on output power, threshold current, thermal stability and modal properties from design parameters such as bottom-distributed Bragg reflector (DBR) doping, cavity doping, dielectric top DBR design and carrier confinement barriers is evaluated. More than 7 mW of output power is emitted from multimode devices with a square active region size of 10 mm. Single-mode power from smaller devices is restricted to 1.5 mW because of a non-optimal cavity shape.

  • 29.
    Marcks von Würtemberg, Rickard
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Zhang, Zhenzhong
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    A novel electrical and optical confinement scheme for surface emitting optoelectronic devices2006In: WORKSHOP ON OPTICAL COMPONENTS FOR BROADBAND COMMUNICATION / [ed] Fonjallaz, PY; Pearsall, TP, BELLINGHAM, WA: SPIE-INT SOC OPTICAL ENGINEERING , 2006, Vol. 6350, p. 63500J-1-63500J-10Conference paper (Refereed)
    Abstract [en]

    A novel electrical and optical confinement scheme for surface emitting optoelectronic devices is presented. The scheme is based on epitaxial regrowth of a pnp current blocking layer structure around a mesa etched in the vertical cavity region of the device. The lateral size and orientation of the mesa is defined lithographically and dry etching is used to create vertical mesa sidewalls. By orienting the mesa sidewalls in certain crystallographic directions, it is possible to selectively grow a current blocking pnp layer structure on the exposed n-type lower cladding layer of the cavity whithout obstructing the electrical injection into the active region. The concept is evaluated in 1.2-mu m GaAs-based light emitting diodes with InGaAs quantum wells. This type of structure can easily be used as the amplifying region of a vertical cavity laser, providing a good alternative to selective oxidation confinement.

  • 30.
    Olsson, Fredrik
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Aubert, Amandine
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Avella, M.
    Jiménez, J.
    Barrios, C. A.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Heteroepitaxy of InP on Silicon-on-Insulator for Optoelectronic Integration2007In: ECS Transactions, ISSN 1938-5862, Vol. 3, no 39, p. 23-29Article in journal (Refereed)
    Abstract [en]

    Epitaxial lateral overgrowth of InP was performed on patterned silicon-on-insulator (SOI) and compared with that on Si substrates in a low pressure hydride vapor phase epitaxy system. The InP was characterized by cathodoluminescence. No red shift of peak wavelength was detected for InP/SOI indicating a negligible thermal strain. Additional low energy peaks were found in some regions with a granular structure on the SOI template. A subsequent growth of an InGaAsP/InP MQW (multi quantum well) structure (λ∼1.5 μm) was grown on the SOI template and on a planar InP reference sample by metal-organic phase epitaxy. The MQW was characterized by room temperature photoluminescence. A red shift of 35 nm with respect to the reference sample was attributed to the selective-area effect causing thicker wells and/or an increased indium content. Although the PL intensity was weaker than that obtained for the reference, the FWHMs were comparable.

  • 31. Pougeoise, E.
    et al.
    Gilet, P.
    Grosse, P.
    Grenouillet, L.
    Chelnokov, A.
    Gerard, J. -M
    Bouillard, J. -S
    Lerondel, G.
    Blaize, S.
    Vilain, S.
    Bachelot, R.
    Royer, P.
    Hamelin, R.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Sundgren, Petrus
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Experimental study of the lasing modes of 1.3-ÎŒm highly strained InGaAs-GaAs quantum-well oxide-confined VCSELs2009In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 21, no 6, p. 377-379Article in journal (Refereed)
    Abstract [en]

    We present an experimental study of the main modes involved in the emission properties of InGaAs-GaAs quantum-well oxide-confined long wavelength vertical-cavity surface-emitting lasers. Lasing properties are dominated by the so-called "oxide modes" and by aperture modes, respectively, for small and large driving currents. We present complementary investigations of the laser emission including far-field angular distribution and spectroscopic near-field optical microscopy to a better understanding of the nature of the "oxide modes."

  • 32. Pougeoise, E.
    et al.
    Gilet, Ph.
    Grosse, Ph.
    Poncet, S.
    Chelnokov, A.
    Gérard, J. -M
    Bourgcois, G.
    Stevens, R.
    Hamelin, R.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Sundgren, Petrus
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    1.3 ÎŒm strained InGaAs quantum well VCSELs: Operation characteristics and transverse modes analysis2006In: Vertical-Cavity Surface-Emitting Lasers X / [ed] Lei, C; Choquette, KD, San Jose, CA, 2006, Vol. 6132, p. 13207-13207Conference paper (Refereed)
    Abstract [en]

    We report results on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs) for optical interconnection applications. The structure was grown by metalorganic vapour-phase epitaxy (MOVPE) and processed as top p-type DBR oxide-confined device. Our VCSELs exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The thermal behaviour of our devices is explained through the threshold current-temperature characteristics. Furthermore, the effective index model is used to understand the modal behaviour.

  • 33. Pougeoise, E.
    et al.
    Gilet, Ph.
    Grosse, Ph.
    Poncet, S.
    Chelnokov, A.
    Gérard, J. -M
    Bourgeois, G.
    Stevens, R.
    Hamelin, R.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Sundgren, Petrus
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Vilain, S.
    Bouillard, J. -S
    Lerondel, G.
    Bachelot, R.
    Royer, P.
    Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs2006In: Proc SPIE Int Soc Opt Eng, 2006Conference paper (Refereed)
    Abstract [en]

    In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 μm oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre.

  • 34. Shi, W.
    et al.
    Faraji, B.
    Greenberg, M.
    Berggren, Jesper
    Department of Electrical and Computer Engineering, University of British Columbia.
    Xiang, Yu
    Department of Electrical and Computer Engineering, University of British Columbia.
    Hammar, Mattias
    Department of Electrical and Computer Engineering, University of British Columbia.
    Chrostowski, L.
    Self-consistent modeling of a transistor vertical-cavity surface-emitting laser2010In: 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010, 2010, p. 45-46Conference paper (Refereed)
    Abstract [en]

    A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The quantum capture/escape process is simulated using a quantum-trap model. Both the steady state and frequency response of the T-VCSEL are calculated by a numerical and analytical approach.

  • 35. Shi, Wei
    et al.
    Faraji, Behnam
    Greenberg, Mark
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Xiang, Yu
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Lestrade, Michel
    Li, Zhi-Qiang
    Li, Z. M. Simon
    Chrostowski, Lukas
    Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser2011In: Optical and quantum electronics, ISSN 0306-8919, E-ISSN 1572-817X, Vol. 42, no 11-13, p. 659-666Article in journal (Refereed)
    Abstract [en]

    A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.

  • 36. Stevens, R.
    et al.
    Gilet, P.
    Larrue, A.
    Grenouillet, L.
    Olivier, N.
    Grosse, P.
    Gilbert, K.
    Hladys, B.
    Ben Bakir, B.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Chelnokov, A.
    Microstructured photonic crystal for single-mode long wavelength VCSELs2008In: Semiconductor Lasers and Laser Dynamics III, 2008, Vol. 6997Conference paper (Refereed)
    Abstract [en]

    In this article, we report on long wavelength (1.27 ÎŒm) single-mode micro-structured photonic crystal strained InGaAs quantum wells VCSELs for optical interconnection applications. Single fundamental mode room-temperature continuous-wave lasing operation was demonstrated for devices designed and processed with different two-dimensional etched patterns. The conventional epitaxial structure was grown by Metal-Organic Vapor Phase Epitaxy (MOVPE) and contains fully doped GaAs/AlGaAs DBRs, one oxidation layer and three strained InGaAs quantum wells. The holes were etched half-way through the top-mirror following various designs (triangular and square lattices) and with varying hole's diameters and pitches. We obtained up to 1.7 mW optical output power and more than 30 dB Side-Mode Suppression Ratio (SMSR) at room temperature and in continuous wave operation. Systematic static electrical, optical and spectral characterization was performed on wafer using an automated probe station. Numerical modeling using the MIT Photonic-Bands (MPB [1]) package of the transverse modal behaviors in the photonic crystal was performed using the plane wave method in order to understand the index-guiding effects of the chosen patterns, and to further optimize the design structures for mode selection at the given wavelength.

  • 37.
    Sundgren, Petrus
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Goldman, Peter M.O.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Highly strained InGaAs/GaAs multiple quantum-wells for laser applications in the 1200-1300-nm wavelength regime2005In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 87, no 7, p. 071104-Article in journal (Refereed)
    Abstract [en]

    We report on metalorganic vapor-phase epitaxy growth optimization and properties of highly strained InGaAs/GaAs quantum-well (QW) structures with emission wavelength beyond 1200 nm. It is observed that a sufficiently high V/III ratio in combination with low growth temperature is critical for preserved layer integrity when increasing the strain. Multiple QWs with up to five wells are realized without any degradation in photoluminescence intensity or broad-area laser performance at an emission wavelength of 1240 nm with threshold current density below 70 A/cm(2) per well.

  • 38.
    Sundgren, Petrus
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Optimization of highly strained InGaAs quantum wells for 1.3-μm vertical-cavity lasers2003In: Proc. 10th European Workshop on Metalorganic Vapour Phase Epitaxy, Lecce, Italy, 8-11 June 2003, 2003, p. 247-250Conference paper (Refereed)
  • 39.
    Sundgren, Petrus
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Marcks von Würtemberg, Rickard
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Ghisoni, Marco
    Zarlink Semiconductor AB.
    Oscarsson, Vilhelm
    Zarlink Semiconductor AB.
    Ödling, Elsy
    Zarlink Semiconductor AB.
    Malmquist, Jessica
    Zarlink Semiconductor AB.
    High-performance 1.3-μm InGaAs vertical cavity surface emitting lasers2003In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 39, no 15, p. 1128-1129Article in journal (Refereed)
    Abstract [en]

    A report is presented on high-performance InGaAs/GaAs double quantum well vertical cavity surface emitting lasers (VCSELs) with record long emission wavelengths up to 1300 nm. Due to a large gain-cavity detuning these VCSELs show excellent temperature performance with very stable threshold current and output power characteristics. For 1.27 mum singlemode devices the threshold current is found to decrease from 2 to 1 mA between 10 and 90degreesC, while the peak output power only drops from 1 to 0.6 mW Large-area 1300 nm VCSELs show multimode output power close to 3 mW.

  • 40. Symonds, C.
    et al.
    Sagnes, I.
    Oudar, J. L.
    Bouchoule, S.
    Garnache, A.
    Berggren, Jesper
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Strassner, Martin
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Room temperature CW lasing operation of monolithically grown 1.55 mu m vertical external cavity surface emitting laser2004In: Optics Communications, ISSN 0030-4018, E-ISSN 1873-0310, Vol. 230, no 4-6, p. 419-423Article in journal (Refereed)
    Abstract [en]

    We report room temperature (20 degreesC) continuous-wave operation of 1.55 mum vertical-external-cavity surface-emitting lasers. The optically pumped monolithic InP-based structure, grown by metal-organic chemical vapor deposition, includes a InP/InGaAsP Bragg reflector, and an active region with strain compensated quantum wells. Output power up to 4 mW is obtained at 0 degreesC. The thermal impedance of the structure is deduced from the experimental data.

  • 41. Söderberg, E.
    et al.
    Gustavsson, J. S.
    Modh, P.
    Larsson, A.
    Zhang, Zhenzhong
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Transmission Experiments using 1.3 um Single Mode InGaAs VCSELs2007In: The European Conference on Lasers and Electro-Optics (CLEO_Europe) 2007, Optical Society of America, 2007Conference paper (Refereed)
  • 42. Söderberg, E.
    et al.
    Gustavsson, J. S.
    Modh, P.
    Larsson, A.
    Zhang, Zhenzhong
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Transmission experiments using 1.3 ÎŒn single mode InGaAs VCSELs2007In: Conference on Lasers and Electro-Optics Europe - Technical Digest, 2007Conference paper (Refereed)
  • 43. Söderberg, E.
    et al.
    Modh, P.
    Gustavsson, J. S.
    Larsson, A.
    Zhang, Zhenzhong
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Single mode 1.28 ÎŒm InGaAs VCSELs using an inverted surface relief2006In: Conference Digest - IEEE International Semiconductor Laser Conference, 2006, p. 123-124Conference paper (Refereed)
    Abstract [en]

    High performance 1.28 Όm InGaAs single mode VCSELs have been fabricated using an inverted surface relief to relax critical fabrication tolerances. Higher order mode suppression >30 dB and 10 Gbps modulation are demonstrated up to 85°C.

  • 44. Söderberg, Emma
    et al.
    Gustavsson, Johan S.
    Modh, Peter
    Larsson, Anders
    Zhang, Zhenzhong
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    High-temperature dynamics, high-speed modulation, and transmission experiments using 1.3-mu m InGaAs single-mode VCSELs2007In: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 25, no 9, p. 2791-2798Article in journal (Refereed)
    Abstract [en]

    High-temperature dynamics, including small and large signal modulation response, of 1.28-ftm GaAs-based vertical-cavity surface-emitting lasers (VCSELs) with highly strained InGaAs quantum wells have been investigated. The VCSELs are oxide-confined with a relatively large oxide aperture for high output power and have a surface relief for fundamental mode operation. An inverted surface relief is used to improve manufacturability and to suppress oxide modes that otherwise appear in VCSELs with a large detuning, between the cavity resonance and the gain peak. The size dependence of the modulation bandwidth and bandwidth limitations are. investigated. A VCSEL with an optimum combination of oxide aperture and surface relief diameters produces clear open eyes with an extinction ratio of > 6 dB at OC-48 and 10-GbE bit rates from 25 degrees C to 85 degrees C under constant drive conditions. The same VCSEL is also shown to be capable of eiror-free transmission (BER < 10(-9)) over 9 km of standard single-mode fiber under the same conditions.

  • 45. Tångring, I.
    et al.
    Wang, S. M.
    Gu, Q. F.
    Wei, Y. Q.
    Sadeghi, M.
    Larsson, A.
    Zhao, Q. X.
    Akram, M. Nadeem
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Strong 1.3-1.6 mu m light emission from metamorphic InGaAs quantum wells on GaAs2005In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 17, p. 171902-Article in journal (Refereed)
    Abstract [en]

    We demonstrate strong 1.3-1.6 mu m photoluminescence (PL) from InGaAs quantum wells (QWs) grown on alloy graded InGaAs buffer layers on GaAs by molecular beam epitaxy. The epistructures show quite smooth surfaces with an average surface roughness less than 2 nm. The PL intensity is comparable with those from InAs quantum dots and InGaAs QWs on GaAs, and InGaAsP QWs on InP at similar wavelengths, but stronger than those from GaInNAs QWs (at least 10 times higher at around 1.5-1.6 mu m). The excellent optical quality implies that the metamorphic approach could be a promising alternative to GaInNAs(Sb) QWs for 1.55 mu m lasers on GaAs.

  • 46. Westbergh, P.
    et al.
    Söderberg, E.
    Gustavsson, J. S.
    Modh, P.
    Larsson, A.
    Zhang, Zhenzhong
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Single mode 1.3 ÎŒm InGaAs VCSELs for access network applications2008In: Semiconductor Lasers and Laser Dynamics III, 2008, Vol. 6997Conference paper (Refereed)
    Abstract [en]

    GaAs-based VCSELs emitting near 1.3 Όm are realized using highly strained InGaAs quantum wells and a large detuning of the cavity resonance with respect to the gain peak. The VCSELs have an oxide aperture for current and optical confinement and an inverted surface relief for suppression of higher-order transverse modes. The inverted surface relief structure also has the advantage of suppressing oxide modes that otherwise appear in VCSELs with a large detuning between the cavity resonance and the gain peak. Under large signal, digital modulation, clear and open eyes and error free transmission over 9 km of single mode fiber have been demonstrated at the OC-48 and 10 GbE bit rates up to 85°C. Here we review these results and present results from a complementary study of the RF modulation characteristics, including second order harmonic and third order intermodulation distortion, relative intensity noise (RIN), and spurious free dynamic range (SFDR). RIN levels comparable to those of single mode VCSELs emitting at 850 nm are demonstrated, with values from -140 to -150 dB/Hz. SFDR values of 100 and 95 dB·Hz2/3 were obtained at 2 and 5 GHz, respectively, which is in the range of those required in radio-over-fiber systems.

  • 47.
    Xiang, Yu
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Yu, Xingang
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zabel, Thomas
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Akram, Muhammed Nadeem
    University Collage Vestfold.
    Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser2013In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 19, p. 191101-Article in journal (Refereed)
    Abstract [en]

    We compare experimental data with three-dimensional numerical calculations of the local minority current in an InGaAs/GaAs transistor vertical-cavity surface-emitting laser at different bias levels. It is demonstrated that lateral potential variations within the device greatly affect the transistor operating conditions. As a result, it locally operates in the active mode in the center of the device, allowing for efficient stimulated recombination, while it globally operates in the saturation regime as reflected by the measured current-voltage characteristics. This allows for excellent laser performance, including mW-range output power, sub-mA threshold base current, and continuous-wave operation well above room temperature.

  • 48. Yang, H.
    et al.
    Zhao, D.
    Chuwongin, S.
    Seo, J. -H
    Yang, W.
    Shuai, Y.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ma, Z.
    Zhou, W.
    Transfer-printed stacked nanomembrane lasers on silicon2012In: Nature Photonics, ISSN 1749-4885, E-ISSN 1749-4893, Vol. 6, no 9, p. 615-620Article in journal (Refereed)
    Abstract [en]

    The realization of silicon-based light sources has been the subject of a major research and development effort worldwide. Such sources may help make integrated photonic and electronic circuitry more cost-effective, with higher performance and greater energy efficiency. The hybrid approach, in which silicon is integrated with a III-V gain medium, is an attractive route in the development of silicon lasers because of its potential for high efficiency. Hybrid lasers with good performance have been reported that are fabricated by direct growth or direct wafer-bonding of the gain medium to silicon. Here, we report a membrane reflector surface-emitting laser on silicon that is based on multilayer semiconductor nanomembrane stacking and a stamp-assisted transfer-printing process. The optically pumped laser consists of a transferred III-V InGaAsP quantum-well heterostructure as the gain medium, which is sandwiched between two thin, single-layer silicon photonic-crystal Fano resonance membrane reflectors. We also demonstrate high-finesse single-or multiwavelength vertical laser cavities.

  • 49. Yang, W.
    et al.
    Yang, H.
    Chuwongin, S.
    Seo, J. -H
    Ma, Z.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Zhou, W.
    Frame-assisted membrane transfer for large area optoelectronic devices on flexible substrates2011In: 2011 IEEE Winter Topicals, WTM 2011, 2011, p. 113-114Conference paper (Refereed)
    Abstract [en]

    Frame assisted membrane transfer process was developed to transfer large area crystalline semiconductor nanomembranes on flexible plastic substrates. InP nanomembranes as large as 2cm×2cm was transferred successfully. Large area flexible photodetectors, solar cells and LED arrays all have been demonstrated experimentally, based on transferred InP nanomembranes.

  • 50. Yang, W.
    et al.
    Yang, H.
    Qin, G.
    Pang, H.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Soref, R.
    Zhenqiang, M.
    Zhou, W.
    Crystalline silicon nanomembrane stacking for large-area flexible photodetectors2009In: IEEE International Conference on Group IV Photonics GFP, 2009, p. 110-112Conference paper (Refereed)
    Abstract [en]

    Flexible photodetectors were demonstrated experimentally on large-area crystalline silicon nanomembranes (3 mm×3 mm), based on wet transfer and metal-frame supported transfer processes. Very low dark current (a few nA) and linear photoresponses were demonstrated for both Si MSM and InP PIN photodiodes on flexible PET substrates.

12 1 - 50 of 59
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf