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  • 1.
    Jaskorzynska, Bozena
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Song, Yi
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Quantum Electronics and Quantum Optics, QEO.
    Zhu, Ning
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Qiu, Min
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Dielectric and Plasmon Slot Waveguides for Photonic Integration2009In: ICTON 2009: 11th International Conference on Transparent Optical Networks: 2009 11TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOLS 1 AND 2, NEW YORK: IEEE , 2009, p. 653-656Conference paper (Refereed)
    Abstract [en]

    Slot waveguides formed either in high-index dielectrics or in metals attract great interest because they provide sub-wavelength confinement in the slot region. While this feature is very attractive for devices relying on stimulated emission or nonlinear effects, it does not necessarily improve the integration density. The spacing between dielectric slot waveguides is still limited by diffraction. Although for metal (plasmon) waveguides the total field can be shrunk far beyond the diffraction limit, the associated increase in propagation loss will set practical limits on both the minimum waveguide width and edge-to-edge separation. Here we compare the packing densities for 3D slot waveguides in silicon and plasmon waveguides in gold with a silicon slot. As a reference we also consider silicon photonic wire. We calculate center-to-center waveguide separations (pitch) versus cross-talk level. We show that at ca 24 dB/mu m cross-talk and requiring the attenuation length of at least 5 mu m, plasmon slot waveguides can be packed ca 3.5 times denser than silicon slot waveguides, and ca 2.5 times denser than photonic wires. We also show examples of the fabricated devices.

  • 2.
    Junesand, Carl
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Dagur, Pritesh
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Pozina, Galia
    Hultman, Lars
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth2012In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 41, no 9, p. 2345-2349Article in journal (Refereed)
    Abstract [en]

    Heteroepitaxy of InP on Si by epitaxial lateral overgrowth (ELOG) using a thin seed layer of InP as starting material is investigated, with special attention given to the effect of the surface morphology of the seed and the mask layers on the quality of the ELOG layers. Chemical mechanical polishing (CMP) has been used to improve the morphological and optical quality of InP grown by hydride vapor-phase epitaxy (HVPE) using ELOG. Two approaches have been investigated: polishing the InP seed layer on Si before depositing the SiO2 mask and polishing the SiO2 mask after its deposition on the unprocessed seed layer. For polishing the InP (seed)/Si, a two-step process with an aluminum oxide- and sodium hypochlorite-containing slurry as well as a slurry based on sodium hypochlorite mixed with citric acid was used. For SiO2 mask polishing, a slurry with colloidal silica as an abrasive was employed. In both cases, the SiO2 mask was patterned with double line openings and ELOG carried out in an HVPE reactor. Morphology and crystal quality of the resulting ELOG layers were studied with atomic force microscopy (AFM) and room-temperature panchromatic cathodoluminescence (PC-CL) in situ in a scanning electron microscope (SEM), respectively. The results show that, whereas both polishing approaches result in an ELOG InP layer with good morphology, its surface roughness is lower when the InP (seed)/Si is subjected to CMP prior to deposition of the SiO2 mask, than when only the SiO2 mask is polished. This approach also leads to a decrease in the number of defects generated during coalescence of the ELOG layers.

  • 3.
    Junesand, Carl
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Optimisation of seed and mask surfaces in epitaxial lateral overgrowth of indium phosphide on silicon for silicon photonics2011In: Conference Proceedings: International Conference on Indium Phosphide and Related Materials, VDE VERLAG GMBH , 2011, p. 1-4Conference paper (Refereed)
    Abstract [en]

    The effect of chemical mechanical polishing (CMP) on epitaxial lateral overgrowth (ELOG) of InP is investigated. To this end, silicon wafers with a seed layer of InP has been treated in two ways; by depositing SiO2 mask and polishing it prior to performing ELOG, and by growing additional InP directly on the InP/Si wafer and then polishing the InP layer prior to depositing and patterning SiO2 followed by subsequent ELOG. For InP seed, a two step process with Chemlox™ slurry and sodium hypochlorite mixed with citric acid-based slurry has been used whereas for SiO2 surface polishing, only one slurry was employed. Analysis of the ELOG layers has been carried out with atomic force microscope (AFM) and panchromatic cathodoluminescence (PC-CL) in-situ a scanning electron microscope (SEM). The results show that polishing the InP/Si layer has not only a beneficial effect on surface morphology of the ELOG layer but also on reduction of its defect density as a consequence of improved conditions for near-ideal coalescence.

  • 4.
    Junesand, Carl
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Julian, Nick
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA. Ghent University, Dept. of Information Technology, Sint-Pietersnieuwstraat 41, 9000 Ghent, Belgium .
    Sun, Yan-Ting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Bowers, John
    Pozina, Galia
    Hultman, Lars
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth2013In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 3, no 11, p. 1960-1973Article in journal (Refereed)
    Abstract [en]

    InP thin films have been grown on InP/Si substrate by epitaxial lateral overgrowth (ELOG). The nature, origin and filtering of extended defects in ELOG layers grown from single and double openings in SiO2 mask have been investigated. Whereas ELOG layers grown from double openings occasionally exhibit threading dislocations (TDs) at certain points of coalescence, TDs are completely absent in ELOG from single openings. Furthermore, stacking faults (SFs) observed in ELOG layers grown from both opening types originate not from coalescence, but possibly from formation during early stages of ELOG or simply propagate from the seed layer through the mask openings. A model describing their propagation is devised and applied to the existent conditions, showing that SFs can effectively be filtered under certain conditions. ELOG layers grown from identical patterns on InP substrate contained no defects, indicating that the defect-forming mechanism is in any case not inherent to ELOG itself.

  • 5.
    Junesand, Carl
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Julian, Nick
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Sun, Yanting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Bowers, John
    Pozina, Galia
    Hultman, Lars
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Study of planar defect filtering in InP gwoun on Si by epitaxial lateral overgrowthManuscript (preprint) (Other academic)
  • 6.
    Junesand, Carl
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    InP overgrowth on SiO2 for active photonic devices on silicon2010In: Proceedings of SPIE - The International Society for Optical Engineering, SPIE - International Society for Optical Engineering, 2010, Vol. 7606Conference paper (Refereed)
    Abstract [en]

    ntegrationof III-V materials on silicon wafer for active photonic deviceshave previously been achieved by growing thick III-V layers ontop of silicon or by bonding the III-V stack layersonto a silicon wafer. Another way is the epitaxial lateralovergrowth (ELOG) of a thin III-V material from a seedlayer directly on the silicon wafer, which can be usedas a platform for the growth of active devices. Asa prestudy, we have investigated lateral overgrowth of InP byHydride Vapor Phase Epitaxy (HVPE) over SiO2 masks of differentthickness on InP substrates from openings in the mask. Openingswhich varied in direction, width and separation were made withE-beam lithography allowing a good dimension control even for nano-sizedopenings (down to 100 nm wide). This mimics overgrowth ofInP on top of SiO2/Si waveguides. By optimizing the growthconditions in terms of growth temperature and partial pressure ofthe source gases with respect to the opening direction, separationand width, we show that a thin (~200 nm) layerof InP with good morphology and crystalline quality can begrown laterally on top of SiO2. Due to the thingrown InP layer, amplification structures on top of it canbe well integrated with the underlying silicon waveguides. The proposedELOG technology provides a promising integration platform for hybrid InP/siliconactive devices.

  • 7.
    Kataria, Himanshu
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Sun, Yan-Ting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Bazin, Alexandre
    CNRS.
    Raineri, Fabrice
    CNRS.
    Mages, Phil
    UCSB.
    Julian, Nick
    UCSB.
    Bowers, John
    UCSB.
    Towards a monolithically integrated III-V laser on silicon: Optimization of multi-quantum well growth of InP on Si2013In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 28, no 9, p. 094008-Article in journal (Refereed)
    Abstract [en]

    High-quality InGaAsP/InP multi-quantum wells (MQWs) on the isolated areas of indium phosphide on silicon necessary for realizing a monolithically integrated silicon laser is achieved. Indium phosphide layer on silicon, the pre-requisite for the growth of quantum wells is achieved via nano-epitaxial lateral overgrowth (NELOG) technique from a defective seed indium phosphide layer on silicon. This technique makes use of epitaxial lateral overgrowth (ELOG) from closely spaced (1 m) e-beam lithography-patterned nano-sized openings (∼300 nm) by low-pressure hydride vapor phase epitaxy. A silicon dioxide mask with carefully designed opening patterns and thickness with respect to the opening width is used to block the defects propagating from the indium phosphide seed layer by the so-called necking effect. Growth conditions are optimized to obtain smooth surface morphology even after coalescence of laterally grown indium phosphide from adjacent openings. Surface morphology and optical properties of the NELOG indium phosphide layer are studied using atomic force microscopy, cathodoluminescence and room temperature -photoluminescence (-PL) measurements. Metal organic vapor phase epitaxial growth of InGaAsP/InP MQWs on the NELOG indium phosphide is conducted. The mask patterns to avoid loading effect that can cause excessive well/barrier thickness and composition change with respect to the targeted values is optimized. Cross-sectional transmission electron microscope studies show that the coalesced NELOG InP on Si is defect-free. PL measurement results indicate the good material quality of the grown MQWs. Microdisk (MD) cavities are fabricated from the MQWs on ELOG layer. PL spectra reveal the existence of resonant modes arising out of these MD cavities. A mode solver using finite difference method indicates the pertinent steps that should be adopted to realize lasing.

  • 8.
    Lou, Fei
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101).
    Wang, Zhechao
    Ghent University-IMEC, Belgium.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Photonic devices based on silicon hybrid plasmonic waveguides2012In: 2012 Asia Communications And Photonics Conference (ACP), 2012, p. AS2H.2-Conference paper (Refereed)
    Abstract [en]

    A 170 nm wide hybrid plasmonic waveguide with a loss of 0,08 dB/mu m is demonstrated experimentally. Directional couplers with different gaps and microdisks with 0.5 mu m radius based on such waveguides are also presented.

  • 9.
    Lou, Fei
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Wang, Zhechao
    Ghent University, Belgium .
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. Zhejiang University.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Sub-wavelength microdisk resonator based on hybrid plasmonic waveguides2012In: Information Optoelectronics, Nanofabrication and Testing, IONT 2012, 2012Conference paper (Refereed)
    Abstract [en]

    Based on hybrid plasmonic waveguides, microdisk resonators with radii of 0.5 μm and FSRs of about 200 nm are simulated and experimentally demonstrated. Thermal tuning of the devices in 6 nm range is also presented.

  • 10.
    Tang, Yongbo
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    High efficiency nonuniformgrating coupler by utilizing the lag effect in the dry etching process2010In: 2010 Conference on Optical Fiber Communication, Collocated National Fiber Optic Engineers Conference, OFC/NFOEC 2010, 2010, p. 5465672-Conference paper (Refereed)
    Abstract [en]

    Utilizing the lag effect in dry etching, a nonuniform silicon-on-insulator grating coupler is designed and fabricated. Over 80% (>-1dB) coupling efficiency is theoretically obtained and experimental coupling efficiency of 55% is achieved for TE polarization.

  • 11.
    Tang, Yongbo
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Highly efficient nonuniform grating coupler for silicon-on-insulator nanophotonic circuits2010In: Optics Letters, ISSN 0146-9592, E-ISSN 1539-4794, Vol. 35, no 8, p. 1290-1292Article in journal (Refereed)
    Abstract [en]

    We present design, fabrication, and characterization of a silicon-on-insulator grating coupler of high efficiency for coupling between a silicon nanophotonic waveguide and a single mode fiber. By utilizing the lag effect of the dry etching process, a grating coupler consisting of nonuniform grooves with different widths and depths is designed and fabricated to maximize the overlapping between the upward wave and the fiber mode. The measured waveguide-to-fiber coupling efficiency of 64% (−1.9 dB) for the transverse electric polarization is achieved by the present nonuniform grating coupler directly defined on a regular silicon-on-insulator wafer.

  • 12. Wang, J.
    et al.
    Guan, X.
    He, Y.
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University, Zijingang Campus, China.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University, Zijingang Campus, China .
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University, Zijingang Campus, China .
    Holmström, Petter
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Sub-μm2 power splitters by using silicon hybrid plasmonic waveguides2011In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 19, no 2, p. 838-847Article in journal (Refereed)
    Abstract [en]

    Nano-scale power splitters based on Si hybrid plasmonic waveguides are designed by utilizing the multimode interference (MMI) effect as well as Y-branch structure. A three-dimensional finite-difference time-domain method is used for simulating the light propagation and optimizing the structural parameters. The designed 1×2 50:50 MMI power splitter has a nano-scale size of only 650 nm×530 nm. The designed Y-branch power splitter is also very small, i.e., about 900 nm×600 nm. The fabrication tolerance is also analyzed and it is shown that the tolerance of the waveguide width is much larger than±50 nm. The power splitter has a very broad band of over 500 nm. In order to achieve a variable power splitting ratio, a 2×2 two-mode interference coupler and an asymmetric Y-branch are used and the corresponding power splitting ratio can be tuned in the range of 97.1%:2.9%-1.7%:98.3% and 84%:16%-16%:84%, respectively. Finally a 1×4 power splitter with a device footprint of 1.9 μm×2.6 μm is also presented using cascaded Y-branches.

  • 13.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Investigation of New Concepts and Solutions for Silicon Nanophotonics2010Doctoral thesis, comprehensive summary (Other academic)
    Abstract [en]

    Nowadays, silicon photonics is a widely studied research topic. Its high-index-contrast and compatibility with the complementary metal-oxide-semiconductor technology make it a promising platform for low cost high density integration. Several general problems have been brought up, including the lack of silicon active devices, the difficulty of light coupling, the polarization dependence, etc. This thesis aims to give new attempts to novel solutions for some of these problems. Both theoretical modeling and experimental work have been done.

    Several numerical methods are reviewed first. The semi-vectorial finite-difference mode solver in cylindrical coordinate system is developed and it is mainly used for calculating the eigenmodes of the waveguide structures employed in this thesis. The finite-difference time-domain method and beam propagation method are also used to analyze the light propagation in complex structures.

    The fabrication and characterization technologies are studied. The fabrication is mainly based on clean room facilities, including plasma assisted film deposition, electron beam lithography and dry etching. The vertical coupling system is mainly used for characterization in this thesis. Compared with conventional butt-coupling system, it can provide much higher coupling efficiency and larger alignment tolerance.

    Two novel couplers related to silicon photonic wires are studied. In order to improve the coupling efficiency of a grating coupler, a nonuniform grating is theoretically designed to maximize the overlap between the radiated light profile and the optical fiber mode. Over 60% coupling efficiency is obtained experimentally. Another coupler facilitating the light coupling between silicon photonic wires and slot waveguides is demonstrated, both theoretically and experimentally. Almost lossless coupling is achieved in experiments.

    Two approaches are studied to realize polarization insensitive devices based on silicon photonic wires. The first one is the use of a sandwich waveguide structure to eliminate the polarization dependent wavelength of a microring resonator. By optimizing the multilayer structure, we successfully eliminate the large birefringence in an ultrasmall ring resonator. Another approach is to use polarization diversity scheme. Two key components of the scheme are studied. An efficient polarization beam splitter based on a one-dimensional grating coupler is theoretically designed and experimentally demonstrated. This polarization beam splitter can also serve as an efficient light coupler between silicon-on-insulator waveguides and optical fibers. Over 50% coupling efficiency for both polarizations and -20dB extinction ratio between them are experimentally obtained. A compact polarization rotator based on silicon photonic wire is theoretically analyzed. 100% polarization conversion is achievable and the fabrication tolerance is relatively large by using a compensation method.

    A novel integration platform based on nano-epitaxial lateral overgrowth technology is investigated to realize monolithic integration of III-V materials on silicon. A silica mask is used to block the threading dislocations from the InP seed layer on silicon. Technologies such as hydride vapor phase epitaxy and chemical-mechanical polishing are developed. A thin dislocation free InP layer on silicon is obtained experimentally.

  • 14.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Ultrasmall Si-nanowire-based polarization rotator2008In: Journal of the Optical Society of America. B, Optical physics, ISSN 0740-3224, E-ISSN 1520-8540, Vol. 25, no 5, p. 747-753Article in journal (Refereed)
    Abstract [en]

    A polarization rotator based on asymmetrical Si nanowires is presented and optimized for high polarization rotation efficiency (almost 100%). The present polarization rotator has a very small conversion length (similar to 10 mu m) and consequently becomes very compact. The analysis of the wavelength dependence shows the present polarization rotator has a broad bandwidth (similar to 120 nm) for high conversion efficiency (> 97%). The tolerance to various fabrication errors is also numerically studied. To compensate the fabrication error, a post-compensation method is introduced by modifying the refractive index of the up-cladding. (c) 2008 Optical Society of America.

  • 15. Wang, Zhechao
    et al.
    Dai, Daoxin
    He, Sailing
    Polarization-insensitive ultrasmall microring resonator design based on optimized Si sandwich nanowires2007In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 19, no 17-20, p. 1580-1582Article in journal (Refereed)
    Abstract [en]

    Bent Si sandwich nanowires are used and optimized to obtain an ultrasmall polarization-insensitive microring resonator (MRR). The used Si sandwich nanowire has a low refractive index layer between two Si layers with high refractive indexes. By optimizing the refractive index and thickness of the sandwiched layer, the bent Si sandwich nanowire becomes nonbirefringent theoretically. The designed nonbirefringent nanowire has a relatively good fabrication tolerance. By using such a nonbirefringent bent Si sandwich nanowire, an ultrasmall polarization-insensitive MRR is designed.

  • 16.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Somesfalean, Gabriel
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Holmström, Petter
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Experimental Realization of a Low-loss Nano-scale Si Hybrid Plasmonic Waveguide2011In: 2011 OPTICAL FIBER COMMUNICATION CONFERENCE AND EXPOSITION (OFC/NFOEC) AND THE NATIONAL FIBER OPTIC ENGINEERS CONFERENCE, Washington: Optical Society of America, 2011Conference paper (Refereed)
    Abstract [en]

    A novel hybrid plasmonic waveguide with nano-scale confinement, consisting of a metal layer separated from a SOI nano-rib by a thin silica layer has been realized. The loss of 0.01dB/mu m allows for ultra-high density photonic integration.

  • 17.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    A monolithic integration platform for silicon photonics2011In: 2011 ICO International Conference on Information Photonics, IP 20112011 ICO International Conference on Information Photonics, IP 2011, IEEE Communications Society, 2011Conference paper (Refereed)
    Abstract [en]

    A novel epitaxial lateral overgrowth (ELOG) technology-based monolithic integration platform for silicon photonics is demonstrated. High quality, defect-free InP ELOG mesa has been experimentally obtained on silicon by using hydride vapor phase epitaxy (HVPE). The proposed platform provides unique advantages for the realization of active devices on silicon

  • 18.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    III-Vs on Si for photonic applications-A monolithic approach2012In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 177, no 17, p. 1551-1557Article in journal (Refereed)
    Abstract [en]

    Epitaxial lateral overgrowth (ELOG) technology is demonstrated as a viable technology to realize monolithic integration of III-Vs on silicon. As an alternative to wafer-to-wafer bonding and die-to-wafer bonding, ELOG provides an attractive platform for fabricating discrete and integrated components in high volume at low cost. A possible route for monolithic integration of III-Vs on silicon for silicon photonics is exemplified by the case of a monolithic evanescently coupled silicon laser (MECSL) by combining InP on Si/SiO2 through ELOG. Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. The structural design of a monolithic evanescently coupled silicon laser (MECSL) and its thermal resistivity are established through simulations. Material studies to realize the above laser through ELOG are undertaken by studying appropriate ELOG pattern designs to achieve InP on narrow regions of silicon. We show that defect-free InP can be obtained on SiO2 as the first step which paves the way for realizing active photonic devices on Si/SiO2 waveguides, e.g. an MECSL.

  • 19.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Tang, Yongbo
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    High Efficiency Grating Couplers for Silicon-on-Insulator Photonic Circuits2010In: 36th European Conference and Exhibition on Optical Communication, ECOC 2010, IEEE Communications Society, 2010Conference paper (Refereed)
    Abstract [en]

    We have experimentally demonstrated two methods for improving the coupling efficiency of grating couplers. A grating coupler-polarization splitter is measured to have over 50% efficiency for both polarizations. 68% efficiency for single polarization is achieved by a nonuniform grating coupler.

  • 20.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Tang, Yongbo
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Experimental demonstration of a high efficiency polarization splitter based on a one-dimensional grating with a Bragg reflector underneath2010In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 22, no 21, p. 1568-1570Article in journal (Refereed)
    Abstract [en]

    A one-dimensional grating serving both as a polarization beam splitter and a vertical coupler for silicon photonic circuits is designed, fabricated, and characterized. Bragg reflectors are employed to improve greatly the coupling efficiency. Over 50% efficiency for both polarizations are achieved experimentally, and the extinction ratio between them is also high (-20 dB).

  • 21.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Tang, Yongbo
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Zhu, Ning
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Experimental demonstration of an ultracompact polarization beam splitter based on a bidirectional grating coupler2009In: 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009, 2009, p. 5377257-Conference paper (Refereed)
    Abstract [en]

    A bidirectional grating serving both as a polarization beam splitter and a vertical coupler for Silicon on Insulator nanophotonic circuits is fabricated and characterized. The measured coupling efficiency is as high as 43%. The demonstrated device has a large 3-dB bandwidth and a high extinction ratio between two orthogonal polarizations.

  • 22.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Zhu, Ning
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Tang, Yongbo
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Ultracompact low-loss coupler between strip and slot waveguides2009In: Optics Letters, ISSN 0146-9592, E-ISSN 1539-4794, Vol. 34, no 10, p. 1498-1500Article in journal (Refereed)
    Abstract [en]

    We present both theoretical and experimental results of an ultracompact waveguide coupler that is capable of highly efficient coupling of light from strip waveguides to slot waveguides, and vice versa. By optimizing the geometrical parameters, it is possible to achieve extremely low-loss coupling. A coupling efficiency of 97% has been obtained experimentally while keeping the overall size down to the range below 10 mu m. Further analysis shows that the proposed coupler has relatively high tolerance to fabrication errors and is wavelength insensitive. (C) 2009 Optical Society of America

  • 23.
    Wosinski, Lech
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Lou, Fei
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Silicon- and plasmonics-based nanophotonics for telecom and interconnects2012In: 2012 Asia Communications And Photonics Conference (ACP), 2012, p. AW1A.3-Conference paper (Refereed)
    Abstract [en]

    We presented a set of fabricated devices based on silicon nanowire waveguides in application to telecom and optical interconnects. New developments in form of hybrid plasmonic waveguides allowing for sub-wavelength light confinement are also included.

  • 24.
    Wosinski, Lech
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Integrated silicon nanophotonics: a solution for computer interconnects2011In: 2011 13th International Conference on Transparent Optical Networks, ICTON 2011, IEEE Communications Society, 2011Conference paper (Refereed)
    Abstract [en]

    To solve the processors performance limitations, new chip-to-chip and on-chip communication needs to be introduced. Optical technology will play here a crucial role. Optical links will move into the chip multiprocessors connecting tens or even hundreds of processing elements and forming a photonic network for communication between them. In this talk we will present our solutions of silicon-based CMOS-compatible optical components for the main building blocks in application to computer interconnects.

  • 25.
    Wosinski, Lech
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Silicon-based Devices for Computer Interconnects2010In: 2010 IEEE 4th International Symposium on Advanced Networks and Telecommunication Systems, ANTS 2010, IEEE Communications Society, 2010, p. 7-9Conference paper (Refereed)
    Abstract [en]

    Similarly to optical telecommunication, optical fibers interconnect today computer systems performing very fast communication between servers and supercomputers or between racks in modern data centers. In the near future optical links will move into the chip multiprocessors connecting tens or even hundreds of processing elements and forming a photonic network for communication between them. For these applications novel, highly integrated and CMOS compatible devices need to be developed. In this talk we will present some of our recent silicon-based CMOS-compatible optical components for application in computer chip-to-chip and on-chip communication

  • 26.
    Wosinski, Lech
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Tang, Yongbo
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Coupling of silicon nanophotonic circuits to optical fibers2010In: Asia Communications and Photonics Conference and Exhibition, ACP 2010, IEEE Communications Society, 2010, p. 421-422Conference paper (Refereed)
    Abstract [en]

    Silicon-based nanophotonic waveguides and components fabricated in silicon-on-insulator technology build a platform for high density photonic integrated circuits, where active III-V devices can be incorporated using evanescent field coupling. These circuits can be fabricated with standard CMOS technology processing, allowing for low cost mass production in applications such as optical networks, computer interconnects and sensing. Connecting of these integrated structures to the real world of optical fibers appears is an important problem to be solved. In this paper we discuss some solutions and present some of fabricated devices including a grating coupler-polarization splitter with over 50% efficiency for both polarizations and a nonuniform grating coupler with 68% efficiency for single polarization. To the best of our knowledge, they are the highest coupling efficiencies obtained by regular SOI grating couplers for both, single polarization and polarization splitting.

  • 27.
    Wosinski, Lech
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Tang, Yongbo
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Interfacing of Silicon-on-insulator nanophotonic circuits to the real world2010In: 2010 12th International Conference on Transparent Optical Networks (ICTON), IEEE Communications Society, 2010, p. 5549268-Conference paper (Refereed)
    Abstract [en]

    Silicon-on-insulator material structure allows for very high light confinement in the silicon core due to its high refractive index. The advantages of this technology include the possibility to miniaturize devices and integrate different functions on a single chip, reduction of optical loss and power consumption and potential perspectives for low cost mass production in CMOS technology line. Together with these advantages some new problems appear in comparison to weakly guided light in silica-on-silicon components, causing additional challenges for researchers to be solved. Besides much higher demands for fabrication accuracy, high refractive index contrast introduces additional optical input/output coupling problems as well as much higher polarization sensitivity of nanophotonic structures. Here we will propose some solutions for these problems and illustrate them with designed and fabricated components

  • 28.
    Wosinski, Lech
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Zhu, Ning
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Wavelength Selective Devices for WDM Communication Systems2009In: 2009 IEEE 3RD INTERNATIONAL SYMPOSIUM ON ADVANCED NETWORKS AND TELECOMMUNICATION SYSTEMS (ANTS 2009), NEW YORK: IEEE , 2009, p. 49-51Conference paper (Refereed)
    Abstract [en]

    Depending on the application in optical communication systems different wavelength division multiplexing devices are used to increase network capacity by allowing several wavelength channels to be transmitted by one fiber, to add or drop different wavelength channels or to separate or put together channels carrying different services. Depending on the application such devices can have wide, coarse or dense channel spacing. Furthermore they can handle different number of channels. In this paper we present some of such devices, their functionality, structures and fabrication technologies.

  • 29.
    Zhu, Ning
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Bragg grating-assisted optical triplexer using two silicon nanowire-based directional couplers2009In: 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009, 2009, p. 5377094-Conference paper (Refereed)
    Abstract [en]

    A triplexer based on silicon nanophotonic wire structure consisting of two Bragg grating-assisted directional couplers is proposed. The device has low loss, low crosstalk, and a footprint of only 210 x40 μm, The 1-dB bandwidth for the three channels located at 1310, 1490 and 1550 nm are 110, 20, and 20 nm, respectively.

1 - 29 of 29
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