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  • 1.
    Doyle, J. P.
    et al.
    KTH, Superseded Departments, Electronics.
    Linnarsson, Margareta K.
    KTH, Superseded Departments, Electronics.
    Pellegrino, Paolo
    KTH, Superseded Departments, Electronics.
    Keskitalo, N.
    KTH, Superseded Departments, Electronics.
    Svensson, B. G.
    KTH, Superseded Departments, Electronics.
    Schöner, A.
    Nordell, N.
    Lindström, J. L.
    Electrically active point defects in n-type 4H–SiC1998In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 84, no 3, p. 61-68Article in journal (Refereed)
    Abstract [en]

    An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers of 4H–SiC grown by vapor phase epitaxy with a concentration of approximately 1×1013 cm−3. Secondary ion mass spectrometry revealed no evidence of the transition metals Ti, V, and Cr. Furthermore, after electron irradiation with 2 MeV electrons, the 0.70 eV level is not observed to increase in concentration although three new levels are observed at approximately 0.32, 0.62, and 0.68 eV below Ec with extrapolated capture cross sections of 4×10−14, 4×10−14, and 5×10−15 cm2, respectively. However, the defects causing these levels are unstable and decay after a period of time at room temperature, resulting in the formation of the 0.70 eV level. Our results suggest strongly that the 0.70 eV level originates from a defect of intrinsic nature. The unstable behavior of the electron irradiation-induced defects at room temperature has not been observed in the 6H–SiC polytype.

  • 2.
    Leveque, Patrick
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Kortegaard Nielsen, Hanne
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Pellegrino, Paolo
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Hallén, Anders.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Svensson, B. G.
    Oslo University.
    Kuznetsov, A. Y.
    Oslo University.
    Wong-Leung, J.
    Australian National University,.
    Jagadish, C.
    Australian National University,.
    Privitera, V.
    CNR-IMM.
    Vacancy and interstitial depth profiles in ion-implanted silicon.2003In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 2, p. 871-877Article in journal (Refereed)
    Abstract [en]

    An experimental method of studying shifts between concentration-versus-depth profiles of vacancy- and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the interstitial carbon-substitutional carbon pair, are obtained at the same sample temperature by varying the duration of the filling pulse. The effect of the capture in the Debye tail has been extensively studied and taken into account. Thus, the two profiles can be recorded with a high relative depth resolution. Using low doses, point defects have been introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature. The effect of the angle of ion incidence has also been investigated. For all implantation conditions the peak of the interstitial profile is displaced towards larger depths compared to that of the vacancy profile. The amplitude of this displacement increases as the width of the initial point defect distribution increases. This behavior is explained by a simple model where the preferential forward momentum of recoiling silicon atoms and the highly efficient direct recombination of primary point defects are taken into account.

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