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  • 1.
    Akram, Nadeem
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Silfvenius, Christofer
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Design optimization of InGaAsP-InGaAlAs 1.55 mu;m strain-compensated MQW lasers for direct modulation applications2004In: Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on, IEEE , 2004, p. 418-421Conference paper (Refereed)
    Abstract [en]

    A comprehensive simulation study of InGaAsP (well)/InGaAlAs(barrier) 1.55 mu;m strain-compensated MQW lasers is presented. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and strain of the barriers and p-doping in the active region. Some preliminary results are also presented for the manufactured lasers using these QWs indicating a good material platform.

  • 2.
    Akram, Nadeem
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Silfvenius, Christofer
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Design optimization of InGaAsP-InGaAlAs 1.55 mu m strain-compensated MQW lasers for direct modulation applications2004In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 19, no 5, p. 615-625Article in journal (Refereed)
    Abstract [en]

    In this paper, a simulation study of InGaAsP(well)/InGaAlAs(barrier) 1.55 mum strain-compensated multi-quantum well (MQW) lasers is presented. Due to a large conduction band discontinuity in this material system, a higher material gain and differential gain can be obtained from such a quantum well (QW) as compared to a traditional InGaAsP/InGaAsP quantum well. The deeper electron well should also improve elevated temperature operating characteristics and reduce the electron spillover from QWs. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and the strain in the barriers. A large number of quantum wells can be uniformly pumped, reducing the carrier density in each individual well. A uniform and low carrier density in all the wells help reduce the total Auger recombination current. High p-doping in the active region is shown to enhance the carrier and gain non-uniformity in the MQWs. A simulated high modulation bandwidth has been demonstrated, promising directly modulated lasers as a low-cost source for short to medium distance (1-10 km) high speed optical links.

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