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  • 1.
    Junesand, Carl
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Dagur, Pritesh
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Pozina, Galia
    Hultman, Lars
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth2012In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 41, no 9, p. 2345-2349Article in journal (Refereed)
    Abstract [en]

    Heteroepitaxy of InP on Si by epitaxial lateral overgrowth (ELOG) using a thin seed layer of InP as starting material is investigated, with special attention given to the effect of the surface morphology of the seed and the mask layers on the quality of the ELOG layers. Chemical mechanical polishing (CMP) has been used to improve the morphological and optical quality of InP grown by hydride vapor-phase epitaxy (HVPE) using ELOG. Two approaches have been investigated: polishing the InP seed layer on Si before depositing the SiO2 mask and polishing the SiO2 mask after its deposition on the unprocessed seed layer. For polishing the InP (seed)/Si, a two-step process with an aluminum oxide- and sodium hypochlorite-containing slurry as well as a slurry based on sodium hypochlorite mixed with citric acid was used. For SiO2 mask polishing, a slurry with colloidal silica as an abrasive was employed. In both cases, the SiO2 mask was patterned with double line openings and ELOG carried out in an HVPE reactor. Morphology and crystal quality of the resulting ELOG layers were studied with atomic force microscopy (AFM) and room-temperature panchromatic cathodoluminescence (PC-CL) in situ in a scanning electron microscope (SEM), respectively. The results show that, whereas both polishing approaches result in an ELOG InP layer with good morphology, its surface roughness is lower when the InP (seed)/Si is subjected to CMP prior to deposition of the SiO2 mask, than when only the SiO2 mask is polished. This approach also leads to a decrease in the number of defects generated during coalescence of the ELOG layers.

  • 2.
    Junesand, Carl
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Optimisation of seed and mask surfaces in epitaxial lateral overgrowth of indium phosphide on silicon for silicon photonics2011In: Conference Proceedings: International Conference on Indium Phosphide and Related Materials, VDE VERLAG GMBH , 2011, p. 1-4Conference paper (Refereed)
    Abstract [en]

    The effect of chemical mechanical polishing (CMP) on epitaxial lateral overgrowth (ELOG) of InP is investigated. To this end, silicon wafers with a seed layer of InP has been treated in two ways; by depositing SiO2 mask and polishing it prior to performing ELOG, and by growing additional InP directly on the InP/Si wafer and then polishing the InP layer prior to depositing and patterning SiO2 followed by subsequent ELOG. For InP seed, a two step process with Chemlox™ slurry and sodium hypochlorite mixed with citric acid-based slurry has been used whereas for SiO2 surface polishing, only one slurry was employed. Analysis of the ELOG layers has been carried out with atomic force microscope (AFM) and panchromatic cathodoluminescence (PC-CL) in-situ a scanning electron microscope (SEM). The results show that polishing the InP/Si layer has not only a beneficial effect on surface morphology of the ELOG layer but also on reduction of its defect density as a consequence of improved conditions for near-ideal coalescence.

  • 3.
    Metaferia, Wondwosen
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Dagur, Pritesh
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Polycrystalline indium phosphide on silicon using a simple chemical route2013In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 113, no 9, p. 093504-Article in journal (Refereed)
    Abstract [en]

    We describe a simple, aqueous and low thermal budget process for deposition of polycrystalline indium phosphide on silicon substrate. Using stoichiometric indium oxide films prepared from its spin-coated precursor on silicon as an intermediate step, we achieve stoichiometric indium phosphide films through phosphidisation. Both indium oxide and indium phosphide have been characterized for surface morphology, chemical composition, and crystallinity. The morphology and crystalline structure of the films have been explained in terms of the process steps involved in our deposition method. Incomplete phosphidisation of indium oxide to indium phosphide results in the restructuring of the partly unconverted oxide at the phosphidisation temperature. The optical properties of the indium phosphide films have been analyzed using micro photoluminescence and the results compared with those of a homoepitaxial layer and a theoretical model. The results indicate that good optical quality polycrystalline indium phosphide has been achieved. The Hall measurements indicate that the carrier mobilities of our samples are among the best available in the literature. Although this paper presents the results of indium phosphide deposition on silicon substrate, the method that we present is generic and can be used for deposition on any suitable substrate that is flexible and cheap which makes it attractive as a batch process for photovoltaic applications.

  • 4.
    Metaferia, Wondwosen
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Tommila, J.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Guina, M.
    Niemi, T.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Selective area heteroepitaxy through nanoimprint lithography for large area InP on Si2012In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 9, no 7, p. 1610-1613Article in journal (Refereed)
    Abstract [en]

    The use of nanoimprint lithography, a low cost and time saving alternative to E-beam lithography, for growing heteroepitaxial indium phosphide layer on silicon is demonstrated. Two types of patterns on 500 nm and 200 nm thick silicon dioxide mask either on InP substrate or InP seed layer on silicon were generated by UV nanoimprint lithography: (i) circular openings of diameter 150 nm and 200 nm and (ii) line openings of width ranging from 200 nm to 500 nm. Selective area growth and epitaxial lateral overgrowth of InP were conducted on these patterns in a low pressure hydride vapour phase epitaxy reactor. The epitaxial layers obtained were characterized by atomic force microscopy, scanning electron microscopy and micro photoluminescence. The growth from the circular openings on InP substrate and InP (seed) on Si substrate is extremely selective with similar growth morphology. The final shape has an octahedral flat top pyramid type geometry. These can be used as templates for growing InP nanostructures on silicon. The grown InP layers from the line openings on InP substrates are ∌ 2.5 Όm thick with root mean square surface roughness as low as 2 nm. Completely coalesced layer of InP over an area of 1.5 mm x 1.5 mm was obtained.The room temperature photoluminescence intensity from InP layers on InP substrate is 55% of that of homoepitaxial InP layer. The decrease in PL intensity with respect to that of the homoepitaxial layer is probably due to defects associated with stacking faults caused by surface roughness of the mask surface. Thus in this study, we have demonstrated that growth of heteroepitaxial InP both homogeneously and selectively on the large area of silicon can be achieved. This opens up the feasibility of growing InP on large area silicon for several photonic applications.

  • 5.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    A monolithic integration platform for silicon photonics2011In: 2011 ICO International Conference on Information Photonics, IP 20112011 ICO International Conference on Information Photonics, IP 2011, IEEE Communications Society, 2011Conference paper (Refereed)
    Abstract [en]

    A novel epitaxial lateral overgrowth (ELOG) technology-based monolithic integration platform for silicon photonics is demonstrated. High quality, defect-free InP ELOG mesa has been experimentally obtained on silicon by using hydride vapor phase epitaxy (HVPE). The proposed platform provides unique advantages for the realization of active devices on silicon

  • 6.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    III-Vs on Si for photonic applications-A monolithic approach2012In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 177, no 17, p. 1551-1557Article in journal (Refereed)
    Abstract [en]

    Epitaxial lateral overgrowth (ELOG) technology is demonstrated as a viable technology to realize monolithic integration of III-Vs on silicon. As an alternative to wafer-to-wafer bonding and die-to-wafer bonding, ELOG provides an attractive platform for fabricating discrete and integrated components in high volume at low cost. A possible route for monolithic integration of III-Vs on silicon for silicon photonics is exemplified by the case of a monolithic evanescently coupled silicon laser (MECSL) by combining InP on Si/SiO2 through ELOG. Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. The structural design of a monolithic evanescently coupled silicon laser (MECSL) and its thermal resistivity are established through simulations. Material studies to realize the above laser through ELOG are undertaken by studying appropriate ELOG pattern designs to achieve InP on narrow regions of silicon. We show that defect-free InP can be obtained on SiO2 as the first step which paves the way for realizing active photonic devices on Si/SiO2 waveguides, e.g. an MECSL.

1 - 6 of 6
CiteExportLink to result list
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Cite
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  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
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  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
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