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  • 1.
    Berrier, Audrey
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Marcinkevicius, Saulius
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Development of damage and its impact on surface recombination velocities in dry-etched InP-based photonic crystalsManuscript (Other academic)
  • 2.
    Berrier, Audrey
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Siegert, Jörg
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Marcinkevicius, Saulius
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Accumulated sidewall damage in dry etched photonic crystals2009In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 27, no 4, 1969-1975 p.Article in journal (Refereed)
    Abstract [en]

    Evidence for accumulated damage is provided by investigating the effect of etch duration on the carrier lifetime of an InGaAsP quantum well (QW) inside the InP-based photonic crystal (PhC) structures. It is found that once the quantum well is etched through, additional etching reduces the carrier lifetimes from 800 to 70 ps. The surface recombination velocity (SRV) at the exposed hole sidewalls is determined from the measured carrier lifetimes of the PhC fields with different lattice parameters. The observed variation in the SRV with etch duration also confirms the presence of accumulated sidewall damage. It increases from 6x10(3) to 1.2x10(5) cm s(-1) as the etching time increases from 3 to 50 min. A geometric model based on sputtering theory and on the evolution of the hole shape is developed to explain the accumulation of sidewall damage. The model is used to estimate the number of impact events from sputtered species reaching the QW sidewalls, and the variation in the accumulated impact events with etch duration is shown to be qualitatively consistent with the experimental observations. Finally, the results suggest a new method for tailoring the carrier lifetimes in PhC membrane structures.

  • 3.
    Berrier, Audrey
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Siegert, Jörg
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Marcinkevicius, Saulius
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Evidence for accumulated sidewall damage in dry etched photonic crystals2008In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118Article in journal (Other academic)
  • 4.
    Berrier, Audrey
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Siegert, Jörg
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Marcinkevicius, Saulius
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Srinivasan, Anand
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Impact of dry-etching induced damage in InP-based photonic crystals2008In: PHOTONIC CRYSTAL MATERIALS AND DEVICES VIII, 2008, Vol. 6989, U9890-U9890 p.Conference paper (Refereed)
    Abstract [en]

    In this work variations of the carrier lifetime in a GaInAsP/InP quantum well in two-dimensional PhC structures etched by Ar/Cl-2 chemically assisted ion beam etching as a function of the processing parameters is investigated. It is shown that the deposition conditions of the SiO2 mask material and its coverage as well as other process steps such as annealing affect the carrier lifetimes. However the impact of patterning the semiconductor on the carrier lifetime is dominant, showing over an order of magnitude reduction. For given PhC lattice parameters, the sidewall damage is shown to be directly related to the measured carrier lifetimes. A simple qualitative model based on sputtering theory and assuming a conical hole-shape development during etching is used to explain the experimental results.

  • 5.
    Dai, Daoxin
    et al.
    Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University.
    Shi, Yaocheng
    Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University.
    Deeply etched SiO2 ridge waveguide for sharp bends2006In: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 24, no 12, 5019-5024 p.Article in journal (Refereed)
    Abstract [en]

    A deeply etched SiO2 ridge waveguide including the buffer, core, and cladding is presented for realizing sharp bends. The present SiO2 ridge waveguide has a strong confinement at the lateral direction, while it has a weak confinement at the vertical direction. Due to the strong confinement, a sharp bend (with a very small bending radius of about 10 mu m) is obtained for an acceptable bending loss. A detailed analysis of the loss in a bent waveguide is given by using a finite-difference method. In order to reduce the transition loss, a narrow bending section with an optimal lateral offset is used. A low leakage loss is obtained by using wide straight waveguides, and linear tapers are used to connect the wide straight section and narrow bent sections.

  • 6.
    Dai, Daoxin
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Theoretical Investigation for Reducing Polarization Sensitivity in Si-Nanowire-Based Arrayed-Waveguide Grating (de)Multiplexer With Polarization-Beam-Splitters and Reflectors2009In: IEEE Journal of Quantum Electronics, ISSN 0018-9197, E-ISSN 1558-1713, Vol. 45, no 5-6, 654-660 p.Article in journal (Refereed)
    Abstract [en]

    A novel design for reducing polarization sensitivity in silicon-on-insulator-based arrayed-waveguide grating (AWG) (de)multiplexer is presented. Each arrayed waveguide has two sections separated by a polarization beam splitter (PBS). These two sections have different core widths and length differences. With these PBSs, one polarization is reflected and the other one goes through. The through polarization enters the second section and is then reflected by a reflector at the end of the second section of the arrayed waveguide. The theoretical simulation shows that one can diminish greatly the polarization sensitivity of both the central channel wavelength and the channel spacing by optimizing the core width and length difference of the second section. The design procedure and formulas are given and an appropriate diffraction order is chosen to obtain a good fabrication tolerance. As an example, an ultrasmall (82.2 x 85.1 mu m(2)) AWG (de)multiplexer with eight channels and a channel spacing of 4 nm is designed to have minimized polarization sensitivity and Bragg-grating PBSs and photonic crystal reflectors are used.

  • 7.
    Dai, Daoxin
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Thylen, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Silicon hybrid plasmonic submicron-donut resonator with pure dielectric access waveguides2011In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 19, no 24, 23671-23682 p.Article in journal (Refereed)
    Abstract [en]

    Characteristic analyses are given for a bent silicon hybrid plasmonic waveguide, which has the ability of submicron bending (e.g., R = 500nm) even when operating at the infrared wavelength range (1.2 mu m similar to 2 mu m). A silicon hybrid plasmonic submicron-donut resonator is then presented by utilizing the sharp-bending ability of the hybrid plasmonic waveguide. In order to enable long-distance optical interconnects, a pure dielectric access waveguide is introduced for the present hybrid plasmonic submicron-donut resonator by utilizing the evanescent coupling between this pure dielectric waveguide and the submicron hybrid plasmonic resonator. Since the hybrid plasmonic waveguide has a relatively low intrinsic loss, the theoretical intrinsic Q-value is up to 2000 even when the bending radius is reduced to 800nm. By using a three-dimensional finite-difference time-domain (FDTD) method, the spectral response of hybrid plasmonic submicron-donut resonators with a bending radius of 800nm is simulated. The critical coupling of the resonance at around 1423nm is achieved by choosing a 80nm-wide gap between the access waveguide and the resonator. The corresponding loaded Q-value of the submicron-donut resonator is about 220.

  • 8.
    Dai, Daoxin
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Gain enhancement in a hybrid plasmonic nano-waveguide with a low-index or high-index gain medium2011In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 19, no 14, 12925-12936 p.Article in journal (Refereed)
    Abstract [en]

    A theoretical investigation of a nano-scale hybrid plasmonic waveguide with a low-index as well as high-index gain medium is presented. The present hybrid plasmonic waveguide structure consists of a Si substrate, a buffer layer, a high-index dielectric rib, a low-index cladding, a low-index nano-slot, and an inverted metal rib. Due to the field enhancement in the nano-slot region, a gain enhancement is observed, i.e., the ratio partial derivative G/partial derivative g > 1, where g and G are the gains of the gain medium and the TM fundamental mode of the hybrid plasmonic waveguide, respectively. For a hybrid plasmonic waveguide with a core width of w(co) = 30nm and a slot height of h(slot) = 50nm, the intrinsic loss could be compensated when using a low-index medium with a moderate gain of 176dB/cm. When introducing the high-index gain medium for the hybrid plasmonic waveguide, a higher gain is obtained by choosing a wider core width. For the high-index gain case with h(slot) = 50nm and w(co) = 500nm, a gain of about 200dB/cm also suffices for the compensation of the intrinsic loss.

  • 9. Jiao, Y. Q.
    et al.
    Dai, Daoxin
    Shi, Yaocheng
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Shortened Polarization Beam Splitters With Two Cascaded Multimode Interference Sections2009In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 21, no 20, 1538-1540 p.Article in journal (Refereed)
    Abstract [en]

    This letter presents a design for shortening the length of a polarization beam splitter (PBS) by using two cascaded multimode interference (MMI) sections with different widths. By optimizing the MMI parameters, a short PBS of good performance is achieved. The total length of the PBS is reduced to about 1/28 of that of a conventional design.

  • 10.
    Jiao, Yuqing
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, China.
    Zhu, Yunpeng
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, China.
    Hong, X.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, China.
    Xu, L.
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, China .
    An integrated optical mixer based on SU8 polymer for PDM-QPSK demodulation2011In: IEEE Photonics Technology Letters, ISSN 1041-1135, Vol. 23, no 20, 1490-1492 p.Article in journal (Refereed)
    Abstract [en]

    This letter presents the design and fabrication of an optical mixer based on SU8 polymer for the demodulation of polarization division multiplexed-quadrature phase shift keying (PDM-QPSK) signals. The mixer consists of two novel polarization beam splitters (PBSs) and two 4 × 4 multimode interference (MMI) couplers. It is the first polymer-based optical mixer incorporated with PDM functionality. The experimental results show good performances of the mixer.

  • 11.
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Design, Simulation and Characterization of Some Planar Lightwave Circuits2008Doctoral thesis, comprehensive summary (Other scientific)
    Abstract [en]

    Optical devices based on planar lightwave circuit (PLC) technology have the advantages of small size, high reliability, possibility for large scale production, and potential integration with electronics. These devices are widely employed in optical telecommunications, sensing, data storage, imaging, and signal processing. This thesis focuses on some selected PLC based devices, such as power splitters, demultiplexers, triplexers and polarization beam splitters.

    First, the basic principle of the waveguides and the simulation methods for PLC devices are discussed. A novel effective index method is introduced to reduce a two-dimensional structure to a one-dimensional one, and can be implemented for arbitrarily shaped waveguides. Numerical methods, such as finite-difference mode solver, beam propagation method, finite-difference time-domain method are introduced to analysis the mode profile of the waveguides, and the propagation properties of light in PLC devices.

    Multimode interference (MMI) couplers are widely used in many PLCs, such as power splitters, ring lasers, optical switches, and wavelength division multiplexers/demultiplexers. In this work, concepts for improving the self-imaging quality of MMI couplers are analyzed and new designs are proposed. A significant improvement in performance together with compact sizes were obtained with taper sections at the input/output of MMI couplers based on SOI, and deeply etched ridges in MMI couplers based on SiO2. A polarization insensitive dual wavelength demultiplexer based on sandwiched MMI waveguides was presented.

    Novel devices including triplexers and polarization beam splitters were realized by using photonic crystal (PhC) structures. Two stages of directional couplers based on PhC waveguides are cascaded to form an ultracompact triplexer. The special decoupling property of the PhC waveguide based directional coupler was utilized in the design. A novel polarization beam splitter was realized by combining a MMI coupler and a PhC which works as a polarization sensitive reflector.

    Finally, fabrication and optical characterization of an ultra-compact directional coupler and PhC structures in InP are presented. In a single etching step, by using the lag-effect in inductively coupled plasma reactive ion etching, a compact directional coupler (55 μm) is demonstrated. Carrier life times in PhC structures etched by chemically assisted ion beam etching were investigated, for emitter and switching applications.

  • 12.
    Shi, Yaocheng
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    A polarization-insensitive 1310/1550-nm demultiplexer based on sandwiched multimode interference waveguides2007In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 19, no 21-24, 1789-1791 p.Article in journal (Refereed)
    Abstract [en]

    A polarization-insensitive dual-wavelength demultiplexer based on sandwiched multimode interference waveguides is presented. Polarization-insensitive multimode waveguides are achieved first by choosing a suitable refractive index of the SiNx middle region. The demultiplxing function is then realized by adjusting the width and length of the multimode region. Simulation results obtained from three-dimensional beam-propagation method show that the demultiplexer can work at 1310- and 1550-nm bands for both polarizations simultaneously with a low insertion loss and a broad bandwidth.

  • 13.
    Shi, Yaocheng
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    An ultra-compact polarization insensitive directional coupler2008In: AOE 2008: ASIA OPTICAL FIBER COMMUNICATION AND OPTOELECTRONIC EXPOSITION AND CONFERENCE, 2008Conference paper (Refereed)
    Abstract [en]

    We investigate the lag-effect in the dry etching process. In one etch step, asymmetric waveguides with a shallow groove in between can be fabricated. This special property can be utilized for the design of an ultra-compact polarization insensitive directional coupler.

  • 14.
    Shi, Yaocheng
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Design of a Polarization Insensitive Triplexer Using Directional Couplers Based on Submicron Silicon Rib Waveguides2009In: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 27, no 11, 1443-1447 p.Article in journal (Refereed)
    Abstract [en]

    An ultracompact triplexer which could be used for both polarizations is designed by utilizing directional couplers based on submicron silicon rib waveguides. First, the polarization insensitive directional couplers are realized by carefully choosing cross-sectional geometry of the waveguide. The length of the coupling region in the first directional coupler is chosen to separate the three wavelengths ( i.e., 1490 nm to one port, 1310 and 1550 nm to the other port). The second directional coupler separates the wavelengths of 1310 and 1550 nm. For the channel of 1490 nm, an additional directional coupler is used to reduce the crosstalk from the 1310 and 1550 nm channels. The total length of the present triplexer is only 400 and simulation with three-dimensional Beam Propagation Method shows good performances for both polarizations.

  • 15.
    Shi, Yaocheng
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Design of a compact multimode interference coupler based on deeply-etched SiO2 ridge waveguides2007In: Optics Communications, ISSN 0030-4018, E-ISSN 1873-0310, Vol. 271, no 2, 404-407 p.Article in journal (Refereed)
    Abstract [en]

    A compact multimode interference (MMI) coupler is realized by using deeply-etched SiO2 ridge waveguides, which have a strong confinement in the lateral direction and improve the quality of self-images in the MMI section, A 1 x 4 MMI coupler is designed as a numerical example and demonstrates good performances such as a low insertion (0.0275 dB) and small non-uniformity (0.0507 dB). The total device size of the present MMI coupler is reduced to about 1/16 of that based on SiO2 buried waveguides.

  • 16.
    Shi, Yaocheng
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Improved performance of a silicon-on-insulator-based multimode interference coupler by using taper structures2005In: Optics Communications, ISSN 0030-4018, E-ISSN 1873-0310, Vol. 253, no 4-6, 276-282 p.Article in journal (Refereed)
    Abstract [en]

    Multimode effects in a multimode interference (MMI) coupler based on silicon-on-insulator (SOI) are analyzed. Multimode interference in the vertical direction of an SOI-based MMI device degrades the self-imaging quality. Taper structures are introduced at the junction between input/output waveguides and multimode region to suppress the excitation of the undesired vertical modes. A 1 x 4 MMI coupler of low insertion loss (0.101 dB) and small non-uniformity (0.102 dB) is designed as a numerical example.

  • 17.
    Shi, Yaocheng
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Novel ultracompact triplexer based on photonic crystal waveguides2006In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 18, no 21-24, 2293-2295 p.Article in journal (Refereed)
    Abstract [en]

    Two stages of directional couplers based on photonic crystal waveguides Are cascaded to form an ultracompact triplexer. The directional couplers are decoupled at the wavelength of 1310 rum. The length of the coupling region in the first directional coupler is chosen to separate the other two wavelengths (i.e., 1490 and 1550 nm), and the coupling region is tapered to improve the extinction ratios. The second directional coupler separates the wavelengths of 1490 and 1310 run. For the channel of 1550 nm, an additional directional coupler is used to reduce the crosstalk from the channels of 1490 and 1310 nm. The total size of the present triplexer is only 50 mu m x 20 mu m, and the good performance is verified with finite-difference time-domain simulation.

  • 18.
    Shi, Yaocheng
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Proposal for an ultracompact polarization-beam splitter based on a photonic-crystal-assisted multimode interference coupler2007In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 19, no 9-12, 825-827 p.Article in journal (Refereed)
    Abstract [en]

    An ultracompact polarization-beam splitter (PBS) combining a multimode interference (MMI) coupler and some photonic crystal (PC) structures is presented. The MMI coupler is designed to collect polarized powers reflected by or transmitted through an internal PC sturcture. The simulation result shows that the designed PBS is very short (about 50 mu m), and has a low insertion loss, a high extinction ratio, and a broad bandwidth.

  • 19.
    Shi, Yaocheng
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Zhou, Qincun
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Design of a flat-field arrayed waveguide grating2005In: Optoelectronic Devices and Integration, 2005, Vol. 5644, 500-507 p.Conference paper (Refereed)
    Abstract [en]

    A curved image plane is usually used in a conventional Rowland-type AWG For some applications (e.g., sensing), a straight image plane is desirable so that the output field at the image plane can be received directly with a detector-array. If one simply chooses a flat output plane (instead of a circular output curve) without optimization for a conventional AWG of Rowland circle type, some considerable aberrations will be introduced, which degrade the performances of the AWG The aberrations are calculated and analyzed with an optical path function. A three-stigmatic-point method is used to optimize the design of an AWG with a straight image plane and minimize the aberrations. In this design, the aberrations at three special wavelengths are removed. The first order aberrations at all wavelengths are also eliminated. An 80-channel flat-field AWG is designed as an example. The results show that the aberrations are reduced greatly and a good spectral response with tolerated side-lodes is obtained.

  • 20.
    Shi, Yaocheng
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Ultracompact directional couplers realized in InP by utilizing feature size dependent etching2008In: Optics Letters, ISSN 0146-9592, E-ISSN 1539-4794, Vol. 33, no 17, 1927-1929 p.Article in journal (Refereed)
    Abstract [en]

    We present the design, fabrication, and measurement of an ultracompact directional coupler in InP/InGaAsP/InP. By utilizing the lag effect in the dry etching process, in one etch step, deeply etched asymmetric waveguides with a shallow groove in between are fabricated. This special property enhances the coupling efficiency for the directional coupler and thus makes the device ultracompact. We demonstrate directional couplers as short as 55 mu m, which is only 1/30th the length of the conventional design.

  • 21.
    Shi, Yaocheng
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics.
    Shahid, Naeem
    KTH, School of Information and Communication Technology (ICT), Material Physics.
    Li, Mingyu
    KTH, School of Information and Communication Technology (ICT), Material Physics.
    Berrier, Audrey
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Material Physics.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Material Physics.
    Experimental demonstration of an ultracompact polarization beamsplitter based on a multimode interference coupler with internal photonic crystals2010In: Optical Engineering: The Journal of SPIE, ISSN 0091-3286, E-ISSN 1560-2303, Vol. 49, no 6, 060503- p.Article in journal (Refereed)
    Abstract [en]

    The fabrication and characterization of a compact InP-based polarization beamsplitter (PBS) is presented. A multimode interference (MMI) coupler with an internal air hole photonic crystal (PhC) section is utilized to separate the two polarizations. The PhC structure in the middle of the MMI is polarization dependent, so that one polarization is reflected and the other one is transmitted; both are collected by the respective output ports of the MMI coupler. The obtained experimental results show that the PBS as short as similar to 400 mu m has an extinction ratio as large as 15 dB.

  • 22. Wang, J.
    et al.
    Guan, X.
    He, Y.
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University, Zijingang Campus, China.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University, Zijingang Campus, China .
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University, Zijingang Campus, China .
    Holmström, Petter
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Sub-μm2 power splitters by using silicon hybrid plasmonic waveguides2011In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 19, no 2, 838-847 p.Article in journal (Refereed)
    Abstract [en]

    Nano-scale power splitters based on Si hybrid plasmonic waveguides are designed by utilizing the multimode interference (MMI) effect as well as Y-branch structure. A three-dimensional finite-difference time-domain method is used for simulating the light propagation and optimizing the structural parameters. The designed 1×2 50:50 MMI power splitter has a nano-scale size of only 650 nm×530 nm. The designed Y-branch power splitter is also very small, i.e., about 900 nm×600 nm. The fabrication tolerance is also analyzed and it is shown that the tolerance of the waveguide width is much larger than±50 nm. The power splitter has a very broad band of over 500 nm. In order to achieve a variable power splitting ratio, a 2×2 two-mode interference coupler and an asymmetric Y-branch are used and the corresponding power splitting ratio can be tuned in the range of 97.1%:2.9%-1.7%:98.3% and 84%:16%-16%:84%, respectively. Finally a 1×4 power splitter with a device footprint of 1.9 μm×2.6 μm is also presented using cascaded Y-branches.

  • 23.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    Shi, Yaocheng
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Somesfalean, Gabriel
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Holmström, Petter
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Experimental Realization of a Low-loss Nano-scale Si Hybrid Plasmonic Waveguide2011In: 2011 OPTICAL FIBER COMMUNICATION CONFERENCE AND EXPOSITION (OFC/NFOEC) AND THE NATIONAL FIBER OPTIC ENGINEERS CONFERENCE, Washington: Optical Society of America, 2011Conference paper (Refereed)
    Abstract [en]

    A novel hybrid plasmonic waveguide with nano-scale confinement, consisting of a metal layer separated from a SOI nano-rib by a thin silica layer has been realized. The loss of 0.01dB/mu m allows for ultra-high density photonic integration.

1 - 23 of 23
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