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  • 1.
    Jaramillo-Fernandez, Juliana
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Chavez-Angel, Emigdio
    Sanatinia, Reza
    KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics. Harvard Univ, USA.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics. IRnova AB, Sweden.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Sotomayor-Torres, Clivia M.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics. CSIC, Spain; Barcelona Inst Sci & Technol, Spain; ICREA, Spain.
    Thermal conductivity of epitaxially grown InP: experiment and simulation2017In: CrystEngComm, ISSN 1466-8033, E-ISSN 1466-8033, Vol. 19, no 14, p. 1879-1887Article in journal (Refereed)
    Abstract [en]

    The integration of III-V optoelectronic devices on silicon is confronted with the challenge of heat dissipation for reliable and stable operation. A thorough understanding and characterization of thermal transport is paramount for improved designs of, for example, viable III-V light sources on silicon. In this work, the thermal conductivity of heteroepitaxial laterally overgrown InP layers on silicon is experimentally investigated using microRaman thermometry. By examining InP mesa-like structures grown from trenches defined by a SiO2 mask, we found that the thermal conductivity decreases by about one third, compared to the bulk thermal conductivity of InP, with decreasing width from 400 to 250 nm. The high thermal conductivity of InP grown from 400 nm trenches was attributed to the lower defect density as the InP micro crystal becomes thicker. In this case, the thermal transport is dominated by phonon-phonon interactions as in a low defect-density monocrystalline bulk material, whereas for thinner InP layers grown from narrower trenches, the heat transfer is dominated by phonon scattering at the extended defects and InP/SiO2 interface. In addition to the nominally undoped sample, sulfur-doped (1 x 10(18) cm(-3)) InP grown on Si was also studied. For the narrower doped InP microcrystals, the thermal conductivity decreased by a factor of two compared to the bulk value. Sources of errors in the thermal conductivity measurements are discussed. The experimental temperature rise was successfully simulated by the heat diffusion equation using the FEM.

  • 2.
    Jaramillo-Fernandez, Juliana
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Ordonez-Miranda, J.
    Ollier, E.
    Sanatinia, Reza
    KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics.
    Kataria, Himanshu
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Chavez-Angel, E.
    Volz, S.
    Sotomayor-Torres, Clivia M.
    Tuning of heat transport across thin films of polycrystalline AlN via multiscale structural defects2015In: ECS Transactions, Electrochemical Society, 2015, no 9, p. 53-64Conference paper (Refereed)
    Abstract [en]

    The effective thermal conductivity of nanocrystalline films of AlN with inhomogeneous microstructure is investigated experimentally and theoretically. This is done by measuring the thermal conductivity of the samples with the 3-omega method and characterizing their microstructure by means of electron microscopy. The relative effect of the microstructure and the interface thermal resistance on the thermal conductivity is quantified through an analytical model. Thermal measurements showed that when the thickness of an AlN film is reduced from 1460 to 270 nm, its effective thermal conductivity decreases from 8.21 to 3.12 WYm-1?K-1, which is two orders of magnitude smaller than its bulk counterpart value. It is shown that both the size effects of the phonon mean free paths and the intrinsic thermal resistance resulting from the inhomogeneous microstructure predominate for thicker films, while the contribution of the interface thermal resistance strengthens as the film thickness is scaled down. The obtained results demonstrate that the structural inhomogeneity in polycrystalline AlN films can be efficiently used to tune their cross- plane thermal conductivity. In addition, thermal conductivity measurements of epitaxially grown InP layers on silicon using Raman spectroscopy are reported.

  • 3.
    Junesand, Carl
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Julian, Nick
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA. Ghent University, Dept. of Information Technology, Sint-Pietersnieuwstraat 41, 9000 Ghent, Belgium .
    Sun, Yan-Ting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Bowers, John
    Pozina, Galia
    Hultman, Lars
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth2013In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 3, no 11, p. 1960-1973Article in journal (Refereed)
    Abstract [en]

    InP thin films have been grown on InP/Si substrate by epitaxial lateral overgrowth (ELOG). The nature, origin and filtering of extended defects in ELOG layers grown from single and double openings in SiO2 mask have been investigated. Whereas ELOG layers grown from double openings occasionally exhibit threading dislocations (TDs) at certain points of coalescence, TDs are completely absent in ELOG from single openings. Furthermore, stacking faults (SFs) observed in ELOG layers grown from both opening types originate not from coalescence, but possibly from formation during early stages of ELOG or simply propagate from the seed layer through the mask openings. A model describing their propagation is devised and applied to the existent conditions, showing that SFs can effectively be filtered under certain conditions. ELOG layers grown from identical patterns on InP substrate contained no defects, indicating that the defect-forming mechanism is in any case not inherent to ELOG itself.

  • 4.
    Junesand, Carl
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Julian, Nick
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Sun, Yanting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Bowers, John
    Pozina, Galia
    Hultman, Lars
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Study of planar defect filtering in InP gwoun on Si by epitaxial lateral overgrowthManuscript (preprint) (Other academic)
  • 5.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    High Quality III-V Semiconductors/Si Heterostructures for Photonic Integration and Photovoltaic Applications2014Doctoral thesis, comprehensive summary (Other academic)
    Abstract [en]

    This thesis deals with one of the promising strategies to monolithically integrate III-V semiconductors with silicon via epitaxial lateral overgrowth (ELOG) technology and is supported by extensive experimental results. The aimed applications are light sources on silicon for electronics-photonics integration and cost effective high efficiency multijunction solar cells.

    The work focusses on the growth of III-V semiconductors consisting of indium phosphide (InP) and its related alloys on silicon primarily because of the bandgaps that these offer for the aimed applications. For this purpose, we make use of the epitaxial growth technique called hydride vapour phase epitaxy and exploit its near equilibrium operation capability to achieve primarily ELOG of high quality InP as the starting material on patterned InP(seed)/silicon wafer. The InP/InGaAsP layers are grown by metal organic vapour phase epitaxy.

    Different pattern designs are investigated to achieve high quality InP over a large area of silicon by ELOG to realise lasers. First, nano patterns designed to take advantage of aspect ratio trapping of defects are investigated. Despite substantial defect filtering insufficient growth area is achieved. To achieve a larger area, coalescence from multiple nano openings is used. Shallowly etched InP/InGaAsP based microdisk resonators fabricated on indium phosphide on silicon achieved by this method have shown whispering gallery modes. However, no lasing action is observed partly due to the formation of new defects at the points of coalescence and partly due to leakage losses due to shallow etching. To overcome these limitations, a new design mimicking the futuristic monolithic evanescently coupled laser design supporting an efficient mode coupling and athermal operation is adopted to yield large areas of ELOG InP/Si having good carrier transport and optical properties. Microdisk resonators fabricated from the uniformly obtained InP/InGaAsP structures on the ELOG InP layers have shown very strong spontaneous luminescence close to lasing action. This is observed for the first time in InP/InGaAsP laser structures grown on ELOG InP on silicon.

    A newly modified ELOG approach called Corrugated ELOG is also developed. Transmission electron microscopy analyses show the formation of abrupt interface between InP and silicon. Electrical measurements have supported the linear Ohmic behaviour of the above junction. This proof of concept can be applied to even other III-V compound solar cells on silicon. This allows only thin layers of expensive III-V semiconductors and cheap silicon as separate subcells for fabricating next generation multijunction solar cells with enhanced efficiencies at low cost. A feasible device structure of such a solar cell is presented. The generic nature of this technique also makes it suitable for integration of III-V light sources with silicon and one such design is proposed.

     

  • 6.
    Kataria, Himanshu
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Sun, Yan-Ting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Bazin, Alexandre
    CNRS.
    Raineri, Fabrice
    CNRS.
    Mages, Phil
    UCSB.
    Julian, Nick
    UCSB.
    Bowers, John
    UCSB.
    Towards a monolithically integrated III-V laser on silicon: Optimization of multi-quantum well growth of InP on Si2013In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 28, no 9, p. 094008-Article in journal (Refereed)
    Abstract [en]

    High-quality InGaAsP/InP multi-quantum wells (MQWs) on the isolated areas of indium phosphide on silicon necessary for realizing a monolithically integrated silicon laser is achieved. Indium phosphide layer on silicon, the pre-requisite for the growth of quantum wells is achieved via nano-epitaxial lateral overgrowth (NELOG) technique from a defective seed indium phosphide layer on silicon. This technique makes use of epitaxial lateral overgrowth (ELOG) from closely spaced (1 m) e-beam lithography-patterned nano-sized openings (∼300 nm) by low-pressure hydride vapor phase epitaxy. A silicon dioxide mask with carefully designed opening patterns and thickness with respect to the opening width is used to block the defects propagating from the indium phosphide seed layer by the so-called necking effect. Growth conditions are optimized to obtain smooth surface morphology even after coalescence of laterally grown indium phosphide from adjacent openings. Surface morphology and optical properties of the NELOG indium phosphide layer are studied using atomic force microscopy, cathodoluminescence and room temperature -photoluminescence (-PL) measurements. Metal organic vapor phase epitaxial growth of InGaAsP/InP MQWs on the NELOG indium phosphide is conducted. The mask patterns to avoid loading effect that can cause excessive well/barrier thickness and composition change with respect to the targeted values is optimized. Cross-sectional transmission electron microscope studies show that the coalesced NELOG InP on Si is defect-free. PL measurement results indicate the good material quality of the grown MQWs. Microdisk (MD) cavities are fabricated from the MQWs on ELOG layer. PL spectra reveal the existence of resonant modes arising out of these MD cavities. A mode solver using finite difference method indicates the pertinent steps that should be adopted to realize lasing.

  • 7.
    Kataria, Himanshu
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Junesand, Carl
    Sun, Yanting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Loududoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Monolithic integration of InP based structures on silicon for optical interconnects2014In: 2014 ECS and SMEQ Joint International Meeting, 2014, no 6, p. 523-531Conference paper (Refereed)
    Abstract [en]

    Monolithic integration of InP based structures on Si for optical interconnects is presented. Different strategies are demonstrated to achieve requisite InP platform on Si. In the first strategy, defect free isolated areas of epitaxially and laterally overgrown InP are obtained on Si and the InGaAsP based quantum wells directly grown on these templates have shown high material quality with uniform interfaces. In the second strategy, selective area growth is exploited to achieve InP nano pyramids on Si which can be used for the growth of quantum dot structures. In the third and the final strategy, a method is presented to achieve direct interface between InP and Si using corrugated epitaxial lateral overgrowth.

  • 8.
    Kataria, Himanshu
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Zhang, Chong
    Julian, Nick
    Bowers, John E.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Simple Epitaxial Lateral Overgrowth Process as a Strategy for Photonic Integration on Silicon2014In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 20, no 4, p. 8201407-Article in journal (Refereed)
    Abstract [en]

    In this paper we propose a strategy to achieve monolithic integration of III-Vs on Si for photonic integration through a simple process. By mimicking the SiO2/Si/SiO2 waveguide necessary to couple light from the gain medium on its top, we adopt a similar to 2 mu m thick silicon dioxide mask for epitaxial lateral overgrowth (ELOG) of InP on Si. The ELOG InP layer as wells as the subsequently grown quantum wells (similar to 1. 55 mu m) have been analyzed by photoluminescence and transmission electron microscopy and found to have high optical quality and very good interface. The studies are strategically important for a monolithic platform that holds great potential in addressing the future need to have an integrated platform consisting of both III-Vs and Si on same chip.

  • 9.
    Kataria, Himanshu
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Nagarajan, Murali
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Sun, Yanting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Carrier-transport, optical and structural properties of large area ELOG InP on Si using conventional optical lithography2013In: 2013 International Conference on Indium Phosphide and Related Materials (IPRM), IEEE conference proceedings, 2013, p. 6562592-Conference paper (Refereed)
    Abstract [en]

    We present the carrier-transport, optical and structural properties of InP deposited on Si by Epitaxial Lateral Overgrowth (ELOG) in a Low Pressure-Hydride Vapor phase epitaxy (LP-HVPE). Hall measurements, micro photoluminescence (μ-PL) and X-ray diffraction (XRD) were used to study the above-mentioned respective properties at room temperature. It is the first time that electrical properties of ELOG InP on Si are studied by Hall measurements. Prior to ELOG, etching of patterned silicon dioxide (SiO2) mask leading to a high aspect ratio, i. e. mask thickness to opening width >2 was optimized to eliminate defect propagation even above the opening. Dense high aspect ratio structures were fabricated in SiO2 to obtain ELOG InP on Si, coalesced over large area, making it feasible to perform Hall measurements. We examine this method and study Hall mobility, strain and optical quality of large area ELOG InP on Si.

  • 10.
    Kataria, Himanshu
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen T.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Zhang, Chong
    Bowers, John E.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    High quality large area ELOG InP on silicon for photonic integration using conventional optical lithography2014In: SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XVI, 2014, p. 898904-Conference paper (Refereed)
    Abstract [en]

    A simple method of growing large areas of InP on Si through Epitaxial Lateral Overgrowth (ELOG) is presented. Isolated areas of high quality InP suitable for photonic integration are grown in deeply etched SiO2 mask fabricated using conventional optical lithography and reactive ion etching. This method is particularly attractive for monolithically integrating laser sources grown on InP with Si/SiO2 waveguide structure as the mask. The high optical quality of multi quantum well (MQW) layers grown on the ELOG layer is promisingly supportive of the feasibility of this method for mass production.

  • 11.
    Metaferia, Wondwosen
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Dev, Apurba
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Material Physics, MF.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Sun, Yanting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Tommila, Juha
    Pozina, Galia
    Hultman, Lars
    Guina, Mircea
    Niemi, Tapio
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    High quality InP nanopyramidal frusta on Si2014In: CrystEngComm, ISSN 1466-8033, E-ISSN 1466-8033, Vol. 16, no 21, p. 4624-4632Article in journal (Refereed)
    Abstract [en]

    Nanosized octagonal pyramidal frusta of indium phosphide were selectively grown at circular hole openings on a silicon dioxide mask deposited on indium phosphide and indium phosphide pre-coated silicon substrates. The eight facets of the frusta were determined to be {111} and {110} truncated by a top (100) facet. The size of the top flat surface can be controlled by the diameter of the openings in the mask and the separation between them. The limited height of the frusta is attributed to kinetically controlled selective growth on the (100) top surface. Independent analyses with photoluminescence, cathodoluminescence and scanning spreading resistance measurements confirm certain doping enrichment in the frustum facets. This is understood to be due to crystallographic orientation dependent dopant incorporation. The blue shift from the respective spectra is the result of this enrichment exhibiting the Burstein-Moss effect. Very bright panchromatic cathodoluminescence images indicate that the top surfaces of the frusta are free from dislocations. The good optical and morphological quality of the nanopyramidal frusta indicates that the fabrication method is very attractive for the growth of site-, shape-, and number-controlled semiconductor quantum dot structures on silicon for nanophotonic applications.

  • 12.
    Metaferia, Wondwosen
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Sun, Yan-Ting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Optimization of InP growth directly on Si by corrugated epitaxial lateral overgrowth2015In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 48, no 4, p. 045102-Article in journal (Refereed)
    Abstract [en]

    In an attempt to achieve an InP-Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An InP seed layer on Si (0 0 1) was patterned into closely spaced etched mesa stripes, revealing the Si surface in between them. The surface with the mesa stripes resembles a corrugated surface. The top and sidewalls of the mesa stripes were then covered by a SiO2 mask after which the line openings on top of the mesa stripes were patterned. Growth of InP was performed on this corrugated surface. It is shown that growth of InP emerges selectively from the openings and not on the exposed silicon surface, but gradually spreads laterally to create a direct interface with the silicon, hence the name CELOG. We study the growth behavior using growth parameters. The lateral growth is bounded by high index boundary planes of {3 3 1} and {2 1 1}. The atomic arrangement of these planes, crystallographic orientation dependent dopant incorporation and gas phase supersaturation are shown to affect the extent of lateral growth. A lateral to vertical growth rate ratio as large as 3.6 is achieved. X-ray diffraction studies confirm substantial crystalline quality improvement of the CELOG InP compared to the InP seed layer. Transmission electron microscopy studies reveal the formation of a direct InP-Si heterointerface by CELOG without threading dislocations. While CELOG is shown to avoid dislocations that could arise due to the large lattice mismatch (8%) between InP and Si, staking faults could be seen in the layer. These are probably created by the surface roughness of the Si surface or SiO2 mask which in turn would have been a consequence of the initial process treatments. The direct InP-Si heterointerface can find applications in high efficiency and cost-effective Si based III-V semiconductor multijunction solar cells and optoelectronics integration.

  • 13.
    Metaferia, Wondwosen
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Tommila, J.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Guina, M.
    Niemi, T.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Selective area heteroepitaxy through nanoimprint lithography for large area InP on Si2012In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 9, no 7, p. 1610-1613Article in journal (Refereed)
    Abstract [en]

    The use of nanoimprint lithography, a low cost and time saving alternative to E-beam lithography, for growing heteroepitaxial indium phosphide layer on silicon is demonstrated. Two types of patterns on 500 nm and 200 nm thick silicon dioxide mask either on InP substrate or InP seed layer on silicon were generated by UV nanoimprint lithography: (i) circular openings of diameter 150 nm and 200 nm and (ii) line openings of width ranging from 200 nm to 500 nm. Selective area growth and epitaxial lateral overgrowth of InP were conducted on these patterns in a low pressure hydride vapour phase epitaxy reactor. The epitaxial layers obtained were characterized by atomic force microscopy, scanning electron microscopy and micro photoluminescence. The growth from the circular openings on InP substrate and InP (seed) on Si substrate is extremely selective with similar growth morphology. The final shape has an octahedral flat top pyramid type geometry. These can be used as templates for growing InP nanostructures on silicon. The grown InP layers from the line openings on InP substrates are ∌ 2.5 Όm thick with root mean square surface roughness as low as 2 nm. Completely coalesced layer of InP over an area of 1.5 mm x 1.5 mm was obtained.The room temperature photoluminescence intensity from InP layers on InP substrate is 55% of that of homoepitaxial InP layer. The decrease in PL intensity with respect to that of the homoepitaxial layer is probably due to defects associated with stacking faults caused by surface roughness of the mask surface. Thus in this study, we have demonstrated that growth of heteroepitaxial InP both homogeneously and selectively on the large area of silicon can be achieved. This opens up the feasibility of growing InP on large area silicon for several photonic applications.

  • 14.
    Metaferia, Wondwosen
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Tommila, J.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Sun, Yanting
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Guina, M.
    Niemi, T.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Selective area heteroepitaxy of InP nanopyramidal frusta on Si for nanophotonics2013In: Indium Phosphide and Related Materials (IPRM), 2012 International Conference on, IEEE , 2013, p. 81-84Conference paper (Refereed)
    Abstract [en]

    InP nanopyramidal frusta on InP and InP precoated Si substrates were grown selectively from nano-imprinted circular openings in silicon dioxide mask using a low pressure hydride vapor phase epitaxy reactor. The grown InP nanopyramidal frusta, octagonal in shape, were characterized by Atomic Force Microscopy, Scanning Electron Microscopy and Photoluminescence. The growth is extremely selective and uniform over the entire patterned area on both substrates. The measured diagonal of the top surface is 30 nm and 90 nm for the nanopyramidal frusta grown from 120 nm and 300 nm diameter openings, respectively. The size and morphology as well as the optical quality of these pyramidal frusta make them suitable templates for quantum dot structures for nano photonics and silicon photonics.

  • 15. Parillaud, O.
    et al.
    De Naurois, G. -M
    Simozrag, B.
    Trinite, V.
    Maisons, G.
    Garcia, M.
    Gerard, B.
    Carras, M.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Sun, Yanting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Multi-regrowth steps for the realization of buried single ridge and μ-stripes quantum cascade lasers2013In: 2013 International Conference on Indium Phosphide and Related Materials (IPRM), IEEE , 2013, p. 6562597-Conference paper (Refereed)
    Abstract [en]

    We report on the realization of buried single ridge and μ-stripes quantum cascade lasers using HVPE and MOVPE regrowth steps of semi-insulating InP:Fe and Si doped layers. We present here the preliminary results obtained on these devices. The reduction of the thermal resistance achieved using semi-insulating InP:Fe for regrowth planarization and μ-stripe arrays approaches are shown and performance perspectives are addressed.

  • 16.
    Sun, Yanting
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Julian, N.
    Bowers, J.
    Pozina, G.
    Hultman, L.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Optical and structural properties of sulfur-doped ELOG InP on Si2015In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 21, article id 215303Article in journal (Refereed)
    Abstract [en]

    Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO<inf>2</inf> mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.

  • 17.
    Sun, Yan-Ting
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth2014In: CrystEngComm, ISSN 1466-8033, Vol. 16, no 34, p. 7889-7893Article in journal (Refereed)
    Abstract [en]

    A coherent InP/Si heterojunction with an atomically abrupt interface and low defect density is obtained by conducting corrugated epitaxial lateral overgrowth of InP on an engineered (001) Si substrate, with InP seed mesa oriented at 30[degree] from the [110] direction in a hydride vapour phase epitaxy reactor. Ohmic conduction across the InP/Si heterojunction can be achieved.

  • 18. Sun, Yan-Ting
    et al.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Realization of atomically abrupt InP/Si heterojunction and dislocationreduction via corrugated epitaxial lateral overgrowthIn: CrystEngComm, ISSN 1466-8033, E-ISSN 1466-8033Article in journal (Other academic)
1 - 18 of 18
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