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  • 1.
    Junesand, Carl
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Dagur, Pritesh
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Pozina, Galia
    Hultman, Lars
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth2012In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 41, no 9, p. 2345-2349Article in journal (Refereed)
    Abstract [en]

    Heteroepitaxy of InP on Si by epitaxial lateral overgrowth (ELOG) using a thin seed layer of InP as starting material is investigated, with special attention given to the effect of the surface morphology of the seed and the mask layers on the quality of the ELOG layers. Chemical mechanical polishing (CMP) has been used to improve the morphological and optical quality of InP grown by hydride vapor-phase epitaxy (HVPE) using ELOG. Two approaches have been investigated: polishing the InP seed layer on Si before depositing the SiO2 mask and polishing the SiO2 mask after its deposition on the unprocessed seed layer. For polishing the InP (seed)/Si, a two-step process with an aluminum oxide- and sodium hypochlorite-containing slurry as well as a slurry based on sodium hypochlorite mixed with citric acid was used. For SiO2 mask polishing, a slurry with colloidal silica as an abrasive was employed. In both cases, the SiO2 mask was patterned with double line openings and ELOG carried out in an HVPE reactor. Morphology and crystal quality of the resulting ELOG layers were studied with atomic force microscopy (AFM) and room-temperature panchromatic cathodoluminescence (PC-CL) in situ in a scanning electron microscope (SEM), respectively. The results show that, whereas both polishing approaches result in an ELOG InP layer with good morphology, its surface roughness is lower when the InP (seed)/Si is subjected to CMP prior to deposition of the SiO2 mask, than when only the SiO2 mask is polished. This approach also leads to a decrease in the number of defects generated during coalescence of the ELOG layers.

  • 2.
    Metaferia, Wondwosen
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Dagur, Pritesh
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Polycrystalline indium phosphide on silicon using a simple chemical route2013In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 113, no 9, p. 093504-Article in journal (Refereed)
    Abstract [en]

    We describe a simple, aqueous and low thermal budget process for deposition of polycrystalline indium phosphide on silicon substrate. Using stoichiometric indium oxide films prepared from its spin-coated precursor on silicon as an intermediate step, we achieve stoichiometric indium phosphide films through phosphidisation. Both indium oxide and indium phosphide have been characterized for surface morphology, chemical composition, and crystallinity. The morphology and crystalline structure of the films have been explained in terms of the process steps involved in our deposition method. Incomplete phosphidisation of indium oxide to indium phosphide results in the restructuring of the partly unconverted oxide at the phosphidisation temperature. The optical properties of the indium phosphide films have been analyzed using micro photoluminescence and the results compared with those of a homoepitaxial layer and a theoretical model. The results indicate that good optical quality polycrystalline indium phosphide has been achieved. The Hall measurements indicate that the carrier mobilities of our samples are among the best available in the literature. Although this paper presents the results of indium phosphide deposition on silicon substrate, the method that we present is generic and can be used for deposition on any suitable substrate that is flexible and cheap which makes it attractive as a batch process for photovoltaic applications.

  • 3.
    Metaferia, Wondwosen
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Sun, Yan-Ting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Dagur, Pritesh
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Alternative Approaches in Growth of Polycrystalline InP on Si2014In: 26th International Conference on Indium Phosphide and Related Materials (IPRM), IEEE , 2014, p. 6880571-Conference paper (Refereed)
    Abstract [en]

    III-V semiconductors are suitable for high efficiency and radiation resistant solar cells. However, the high cost of these materials limited the application of these solar cells only for specialty application. High quality polycrystalline III-V thin films on low cost substrate are the viable solutions for the problem. In this work we demonstrate two new approaches to grow polycrystalline InP on Si(001) substrate. (i) A simple chemical solution route which makes use of deposition of In2O3 on Si and its subsequent phosphidisation and (ii) In assisted growth that involves deposition of In metal on Si and subsequent growth of InP from its precursors in hydride vapor phase epitaxy. Both techniques are generic and can be applied to other semiconductors on low cost and flexible substrates.

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