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  • 1. Huang, Daming
    et al.
    Liu, Wei
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Liu, Zhiying
    KTH, School of Information and Communication Technology (ICT), Material Physics.
    Liao, C. C.
    Zhang, Li-Fei
    Gan, Zhenghao
    Wong, Waisum
    Li, Ming-Fu
    A Modified Charge-Pumping Method for the Characterization of Interface-Trap Generation in MOSFETs2009In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 56, no 2, p. 267-274Article in journal (Refereed)
    Abstract [en]

    A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (similar to t(n)) of interface-trap generation is observed. The index n. is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics.

  • 2.
    Li, Jiantong
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Unander, Tomas
    López Cabezas, Ana
    KTH, School of Information and Communication Technology (ICT), Electronic Systems. KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Shao, Botao
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. KTH, School of Information and Communication Technology (ICT), Electronic Systems.
    Liu, Zhiying
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. Uppsala University, Sweden.
    Feng, Yi
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. KTH, School of Information and Communication Technology (ICT), Electronic Systems.
    Forsberg, Esteban Bernales
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Zhibin
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Jögi, Indrek
    Gao, Xindong
    Boman, Mats
    Zheng, Li-Rong
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. KTH, School of Information and Communication Technology (ICT), Electronic Systems.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Nilsson, Hans-Erik
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT). Uppsala University, Sweden.
    Ink-jet printed thin-film transistors with carbon nanotube channels shaped in long strips2011In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 109, no 8, article id 084915Article in journal (Refereed)
    Abstract [en]

    The present work reports on the development of a class of sophisticated thin-film transistors (TFTs) based on ink-jet printing of pristine single-walled carbon nanotubes (SWCNTs) for the channel formation. The transistors are manufactured on oxidized silicon wafer and flexible plastic substrates at ambient conditions. For this purpose, ink-jet printing techniques are developed aiming at high-throughput production of SWCNT thin-film channels shaped in long strips. Stable SWCNT inks with proper fluidic characteristics are formulated by polymer addition. The present work unveils, through Monte Carlo simulation and in the light of heterogeneous percolation, the underlying physics of the superiority of long-strip channels for SWCNT TFTs. It further predicts the compatibility of such a channel structure with ink-jet printing taking into account the minimum dimensions achievable by commercially available printers. The printed devices exhibit improved electrical performance and scalability, compared to previously reported ink-jet printed SWCNT TFTs. The present work demonstrates that ink-jet printed SWCNT TFTs of long-strip channels are promising building blocks for flexible electronics.

  • 3.
    Liu, Zhiying
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Qiu, Zhijun
    Zhang, Z B
    Zheng, Li-Rong
    KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. KTH, School of Information and Communication Technology (ICT), Electronic Systems.
    Zhang, S L
    Mobility Extraction for Nanotube TFTs2011In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 32, no 7, p. 913-915Article in journal (Refereed)
    Abstract [en]

    An extensive investigation of carrier mobility is presented for thin-film transistors (TFTs) with single-walled carbon nanotube (SWCNT) networks as the semiconductor channel. For TFTs particularly with low-density SWCNTs in the networks, the extracted mobility using the standard method for Si metal-oxide-semiconductor field-effect transistors is erroneous, mainly resulting from use of a parallel-plate capacitor model and assumption of the source-drain current being inversely proportional to the channel length. Large hysteresis in the transfer characteristics further complicates the extraction. By properly addressing all these challenges in this letter, a comprehensive methodology is established, leading to the extraction of mobility values that are independent of geometrical parameters.

  • 4. Liu, Zhiying
    et al.
    Zhang, Zhi-Bin
    Chen, Qiang
    KTH, School of Information and Communication Technology (ICT), Electronic Systems. KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Zheng, Lirong
    KTH, School of Information and Communication Technology (ICT), Electronic Systems. KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
    Zhang, Shi-Li
    Solution-Processable Nanotube/Polymer Composite for High-Performance TFTs2011In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 32, no 9, p. 1299-1301Article in journal (Refereed)
    Abstract [en]

    Thin-film field-effect transistors (TFTs) are readily fabricated using a semiconductor composite that is solution processed under ambient conditions for the conduction channel. The composite comprises single-walled carbon nanotubes (SWCNTs) embedded in poly-9,9' dioctyl-fluorene-co-bithiophene. Carrier mobility values approaching 10 cm(2)V(-1)s(-1) are obtained for the composite with relatively high SWCNT concentrations. When the SWCNT concentration is reduced for a large ON/OFF current ratio > 10(6), the mobility remains decent around 0.3 cm(2)V(-1)s(-1). The resultant TFTs display remarkable environmental and operational reliability. Nanotube-based composites are therefore of significance in printed electronics owing to their simplicity in device fabrication and competitiveness in device performance.

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