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  • 1.
    Toth-Pal, Zsolt
    et al.
    Swerea KIMAB, Sweden.
    Zhang, Yafan
    Acreo Swedish ICT, Sweden.
    Belov, I.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.
    Bakowski, M.
    Investigation of pressure dependent thermal contact resistance between silver metallized SiC chip and DBC substrate2015In: European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Trans Tech Publications Inc., 2015, Vol. 821-823, p. 452-455Conference paper (Refereed)
    Abstract [en]

    Thermal contact resistances between a silver metallized SiC chip and a direct bonded copper (DBC) substrate have been measured in a heat transfer experiment. A novel experimental method to separate thermal contact resistances in multilayer heat transfer path has been demonstrated. The experimental results have been compared both with analytical calculations and with 3D computational fluid dynamics (CFD) simulation results. A simplified CFD model of the experimental setup has been validated. The results show significant pressure dependence of the thermal contact resistance but also a pressure independent part.

  • 2.
    Toth-Pal, Zsolt
    et al.
    KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems. Swerea KIMAB, Sweden.
    Zhang, Yafan
    KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems. Swerea KIMAB, Sweden.
    Hammam, Tag
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.
    Bakowski, Mietek
    Thermal improvement of press-pack packages: Pressure dependent thermal contact resistance with a thin silver interlayer between molybdenum substrate and silicon carbide chip2017In: 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017, Institute of Electrical and Electronics Engineers (IEEE), 2017, article id 7936753Conference paper (Refereed)
    Abstract [en]

    In typical press-pack, free-floating packages the thermal contact resistance between chip and substrate is a major limiting factor for the cooling ability of the power module. We report an introduction of a new, thin Silver interlayer between Molybdenum substrate and chip, and how it improves the thermal contact. The thermal contact resistances were measured with and without a Silver interlayer at different pressures. The surface roughness of the SiC chip and the Molybdenum substrate were characterized. The thermal contact resistances were measured at three different heating power levels. The results show a significant reduction of the thermal contact resistance with only a few micrometer Silver interlayer. The improved cooling effect of a Silver interlayer was also demonstrated with a fluid dynamics type of 3 D simulation comparing temperature distributions with and without a Silver interlayer. These results project a possible thermal improvement in press-pack packages.

  • 3.
    Toth-Pal, Zsolt
    et al.
    Swerea KIMAB, Sweden.
    Zhang, Yafan
    Swerea KIMAB, Sweden.
    Nee, Hans-Peter
    KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.
    Bakowski, M.
    Investigation of pressure dependent thermal contact resistance between silver metallized SiC chip and molybdenum substrate and between molybdenum substrate and bulk copper2016In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Trans Tech Publications, 2016, Vol. 858, p. 1061-1065Conference paper (Refereed)
    Abstract [en]

    Thermal contact resistances between a silver metallized SiC chip and a Molybdenum substrate and between the Molybdenum substrate and bulk Copper were measured in a heat transfer experiment. An experimental method to separate thermal contact resistances in a multilayer heat transfer path was used to extract the layer-specific contact resistances. The experimental results were compared with theory based calculations and also with 3-D computational fluid dynamics (CFD) simulation results. The results show significant pressure dependence of the thermal contact resistance and the results show higher thermal contact resistance per unit area between the bulk SiC chip and Molybdenum than between Molybdenum and bulk Copper.

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