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  • 1.
    Aggerstam, Thomas
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Radamson, Henry H.
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Sjödin, Mikael
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Lorenzini, P.
    CNRS-CHREA.
    Look, D.C.
    Semiconductor Research Center, Wright State University.
    Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire2006In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 2, p. 705-707Article in journal (Refereed)
    Abstract [en]

    We have developed a virtual GaN substrate on sapphire based on a two-step growth method. By optimizing the growth scheme for the virtual substrate we have improved crystal quality and reduced interface roughness. Our Al0.22Ga0.78N/GaN HEMT structure grown on the optimized semi-insulating GaN virtual substrate, exhibits Hall mobilities as high as 1720 and 7350 cm(2)/Vs and sheet carrier concentrations of 8.4 x 1012 and 10.0 x 1012 cm(-2) at 300 K and 20 K, respectively The presence of good AlGaN/GaN interface quality and surface morphology is also substantiated by X-Ray reflectivity and Atomic Force Microscopy measurements. A simplified transport model is used to fit the experimental Hall mobility.

  • 2.
    Aggerstam, Thomas
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Sjödin, Mikael
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE2006In: Physica Status Solidi C - Current Topics in Solid State Physics: Vol 3, No 6 / [ed] Hildebrandt S; Stutzmann M, 2006, Vol. 3, p. 2373-2376Conference paper (Refereed)
    Abstract [en]

    A simple AlGaN/GaN HEMT structure without any interlayer on Fe-doped GaN (GaN:Fe) grown by LP-MOVPE in one single run on sapphire is demonstrated. The surface segregation of Fe in GaN occurring during growth is identified. Hall measurements yield 2DEG (two dimensional electron gas) mobilities of 1700 and 10700 cm2/Vs and sheet carrier concentrations of 5.1×10 12 and 5.7×1012 cm-2 at 300 K and 20 K, respectively. Good pinch-off current-voltage (ID-VD) characteristics is observed from AlGaN/GaN HEMTs. A maximum drain current density of 0.6 A/mm and a peak extrinsic transconductance of 200 mS/mm have been observed. The HEMT structure yields very good device isolation as indicated by an isolation current of ≀1 nA at 20 V.

  • 3. Flanagan, K. T.
    et al.
    Vingerhoets, P.
    Avgoulea, M.
    Billowes, J.
    Bissell, M. L.
    Blaum, K.
    Cheal, B.
    De Rydt, M.
    Fedosseev, V. N.
    Forest, D. H.
    Geppert, Ch.
    Koester, U.
    Kowalska, M.
    Kraemer, J.
    Kratz, K. L.
    Krieger, A.
    Mane, E.
    Marsh, B. A.
    Materna, T.
    Mathieu, L.
    Molkanov, P. L.
    Neugart, R.
    Neyens, G.
    Noertershaeuser, W.
    Seliverstov, M. D.
    Serot, O.
    Schug, M.
    Sjödin, Mikael
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Stone, J. R.
    Stone, N. J.
    Stroke, H. H.
    Tungate, G.
    Yordanov, D. T.
    Volkov, Yu. M.
    Nuclear Spins and Magnetic Moments of Cu-71,Cu-73,Cu-75: Inversion of pi 2p(3/2) and pi 1f(5/2) Levels in Cu-752009In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 103, no 14, p. 142501-Article in journal (Refereed)
    Abstract [en]

    We report the first confirmation of the predicted inversion between the pi 2p(3/2) and pi 1f(5/2) nuclear states in the nu g(9/2) midshell. This was achieved at the ISOLDE facility, by using a combination of in-source laser spectroscopy and collinear laser spectroscopy on the ground states of Cu-71,Cu-73,Cu-75, which measured the nuclear spin and magnetic moments. The obtained values are mu(Cu-71)=+2.2747(8)mu(N), mu(Cu-73)=+1.7426(8)mu(N), and mu(Cu-75)=+1.0062(13)mu(N) corresponding to spins I=3/2 for Cu-71,Cu-73 and I=5/2 for Cu-75. The results are in fair agreement with large-scale shell-model calculations.

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