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  • 1.
    Iovan, Adrian
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Andersson, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Naidyuk, Yu. G.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Vedyaev, A.
    Dieny, B.
    Korenivski, Vladislav
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Spin diode based on Fe/MgO double tunnel junction2008In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 8, no 3, p. 805-809Article in journal (Refereed)
    Abstract [en]

    We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magnetoresistance is a record high > 1000%, essentially making the structure an on/off spin switch. This, combined with the strong diode effect, similar to 100, demonstrates a new device principle, promising for memory and reprogrammable logic applications.

  • 2.
    Iovan, Adrian
    et al.
    KTH.
    Fischer, Marco
    KTH, School of Electrical Engineering (EES), Micro and Nanosystems.
    Lo Conte, Roberto
    KTH.
    Korenivski, Vladislav
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices2012In: Beilstein Journal of Nanotechnology, ISSN 2190-4286, Vol. 3, p. 884-892Article in journal (Refereed)
    Abstract [en]

    Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

  • 3.
    Iovan, Adrian
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Lam, Kanber
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Andersson, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Cherepov, Sergiy
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Haviland, David B.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Korenivski, Vladislav
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Tunneling spectroscopy of magnetic double barrier junctions2007In: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 43, no 6, p. 2818-2820Article in journal (Refereed)
    Abstract [en]

    Scanning tunneling microscopy (STM) is used to study transport in magnetic double tunnel junctions (DTJs) formed using a fixed transparency barrier of a patterned tunnel junction (TJ), and a variable tunnel barrier between the top electrode of the patterned junction and the STM tip. A sufficiently thin top electrode has been predicted to result in a rectification of charge current through a DTJ when the two barriers have different transparency. Our measurements indeed show a high current rectification ratio for 3-nm-thick, continuous film top electrodes, which is observed for junctions with asymmetric tunnel barriers.

  • 4.
    Korenivski, Vladislav
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Iovan, Adrian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Kadigrobov, A.
    Shekhter, R. I.
    Spin laser based on magnetic nano-contact array2013In: Europhysics letters, ISSN 0295-5075, E-ISSN 1286-4854, Vol. 104, no 2, p. 27011-Article in journal (Refereed)
    Abstract [en]

    Arrays of 10 nm diameter point contacts of exchange-coupled spin-majority/spin-minority ferromagnetic metals, integrated into infrared-terahertz range photon resonators, are fabricated and measured electrically and optically. Giant, threshold-type electronic excitations under high-current pumping of the devices are observed as abrupt but reversible steps in device resistance, in many cases in excess of 100%, which correlate with optical emission from the devices. The results are interpreted as due to stimulated spin-flip electron-photon relaxation in the system.

  • 5.
    Korenivski, Vladislav
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Iovan, Adrian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.
    Kadigrobov, A.
    Shekhter, R. I.
    Stimulated emission of radiation using spin-population inversion in metals2013In: Proceedings - 2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves, MSMW 2013, IEEE , 2013, p. 259-261Conference paper (Refereed)
    Abstract [en]

    The discovery of masers and lasers has led to major breakthroughs in science and technology. Later important developments include compact semiconductor lasers for visible to near-infrared and quantum-cascade lasers for far-infrared to THz radiation.

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