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  • 1.
    Chen, Tingsu
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Dumas, R. K.
    Eklund, Anders
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Muduli, P. K.
    Houshang, A.
    Awad, A. A.
    Dürrenfeld, P.
    Malm, B. Gunnar
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Rusu, Ana
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Åkerman, Johan
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics. Univ Gothenburg, Sweden.
    Spin-Torque and Spin-Hall Nano-Oscillators2016In: Proceedings of the IEEE, ISSN 0018-9219, E-ISSN 1558-2256, Vol. 104, no 10, p. 1919-1945, article id 7505988Article in journal (Refereed)
    Abstract [en]

    This paper reviews the state of the art in spin-torque and spin-Hall-effect-driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss different implementations of these oscillators, their functional properties in terms of frequency range, output power, phase noise, and modulation rates, and their inherent propensity for mutual synchronization. Finally, the potential for these oscillators in a wide range of applications, from microwave signal sources and detectors to neuromorphic computation elements, is discussed together with the specific electronic circuitry that has so far been designed to harness this potential.

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