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  • 1.
    Elshaari, Ali W.
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Buyukozer, Efe
    Swiss Fed Inst Technol, Dept Mech & Proc Engn, CH-8092 Zurich, Switzerland..
    Zadeh, Iman Esmaeil
    Delft Univ Technol, Opt Grp, NL-2628 CJ Delft, Netherlands..
    Lettner, Thomas
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Zhao, Peng
    Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol, Dept Elect Engn, Beijing, Peoples R China..
    Schöll, Eva
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Gyger, Samuel
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Reimer, Michael E.
    Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada.;Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada..
    Dalacu, Dan
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Poole, Philip J.
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Jöns, Klaus D.
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Zwiller, Val
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Strain-Tunable Quantum Integrated Photonics2018In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 18, no 12, p. 7969-7976Article in journal (Refereed)
    Abstract [en]

    Semiconductor quantum dots are crucial parts of the photonic quantum technology toolbox because they show excellent single-photon emission properties in addition to their potential as solid-state qubits. Recently, there has been an increasing effort to deterministically integrate single semiconductor quantum dots into complex photonic circuits. Despite rapid progress in the field, it remains challenging to manipulate the optical properties of waveguide-integrated quantum emitters in a deterministic, reversible, and nonintrusive manner. Here we demonstrate a new class of hybrid quantum photonic circuits combining III V semiconductors, silicon nitride, and piezoelectric crystals. Using a combination of bottom-up, top-down, and nanomanipulation techniques, we realize strain tuning of a selected, waveguide-integrated, quantum emitter and a planar integrated optical resonator. Our findings are an important step toward realizing reconfigurable quantum-integrated photonics, with full control over the quantum sources and the photonic circuit.

  • 2.
    Haffouz, Sofiane
    et al.
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Zeuner, Katharina D.
    KTH.
    Dalacu, Dan
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Poole, Philip J.
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Lapointe, Jean
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Poitras, Daniel
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Mnaymneh, Khaled
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Wu, Xiaohua
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Couillard, Martin
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Korkusinski, Marek
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Schöll, Eva
    KTH.
    Jöns, Klaus D.
    KTH.
    Zwiller, Valery
    KTH.
    Williams, Robin L.
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide2018In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 18, no 5, p. 3047-3052Article in journal (Refereed)
    Abstract [en]

    We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

  • 3.
    Schöll, Eva
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum and Biophotonics.
    Hanschke, Lukas
    Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany.;Tech Univ Munich, Phys Dept, D-85748 Garching, Germany..
    Schweickert, Lucas
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum and Biophotonics.
    Zeuner, Katharina D.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum and Biophotonics.
    Reindl, Marcus
    Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria..
    da Silva, Saimon Filipe Covre
    Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria..
    Lettner, Thomas
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum and Biophotonics.
    Trotta, Rinaldo
    Sapienza Univ Roma, Dipartimento Fis, Piazzale A Moro 1, I-00185 Rome, Italy..
    Finley, Jonathan J.
    Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany.;Tech Univ Munich, Phys Dept, D-85748 Garching, Germany..
    Mueller, Kai
    Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany.;Tech Univ Munich, Phys Dept, D-85748 Garching, Germany..
    Rastelli, Armando
    Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria..
    Zwiller, Val
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum and Biophotonics.
    Jöns, Klaus D.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum and Biophotonics.
    Resonance Fluorescence of GaAs Quantum Dots with Near-Unity Photon Indistinguishability2019In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 19, no 4, p. 2404-2410Article in journal (Refereed)
    Abstract [en]

    Photonic quantum technologies call for scalable quantum light sources that can be integrated, while providing the end user with single and entangled photons on demand. One promising candidate is strain free GaAs/A1GaAs quantum dots obtained by aluminum droplet etching. Such quantum dots exhibit ultra low multi-photon probability and an unprecedented degree of photon pair entanglement. However, different to commonly studied InGaAs/GaAs quantum dots obtained by the Stranski-Krastanow mode, photons with a near-unity indistinguishability from these quantum emitters have proven to be elusive so far. Here, we show on-demand generation of near-unity indistinguishable photons from these quantum emitters by exploring pulsed resonance fluorescence. Given the short intrinsic lifetime of excitons and trions confined in the GaAs quantum dots, we show single photon indistinguishability with a raw visibility of V-raw = (95.0(-6.1)(+5.0))%, without the need for Purcell enhancement. Our results represent a milestone in the advance of GaAs quantum dots by demonstrating the final missing property standing in the way of using these emitters as a key component in quantum communication applications, e.g., as quantum light sources for quantum repeater architectures.

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