Change search
Refine search result
1 - 44 of 44
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the 'Create feeds' function.
  • 1.
    Akram, Nadeem
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Berrier, Audrey
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Experimental characterization of high-speed 1.55 mu m buried heterostructure InGaAsP/InGaAlAs quantum-well lasers2009In: Journal of the Optical Society of America. B, Optical physics, ISSN 0740-3224, E-ISSN 1520-8540, Vol. 26, no 2, 318-327 p.Article in journal (Refereed)
    Abstract [en]

    Detailed experimental characterization is performed for 1550 nm semi-insulating regrown buried heterostructure Fabry-Perot (FP) lasers having 20 InGaAsP/InGaAlAs strain-balanced quantum wells (QWs) in the active region. Light-current-voltage performance, electrical impedance, small-signal response below and above threshold, amplified spontaneous emission spectrum below threshold and relative intensity noise spectrum are measured. Different laser parameters such as external differential quantum efficiency eta(d), background optical loss alpha(i), K-factor, D-factor, characteristic temperature T-0, differential gain dg/dn, gain-compression factor epsilon, carrier density versus current, differential carrier lifetime tau(d), optical gain spectrum below threshold, and chirp parameter alpha are extracted from these measurements. The FP lasers exhibited a high T-0 (78-86.5 degrees C) and very high-resonance frequency (23.7 GHz). The results indicate that appropriately designed lasers having a large number of InGaAsP well/InGaAlAs barrier QWs with shallow valence-band discontinuity can be useful for un-cooled high-speed direct-modulated laser applications.

  • 2.
    Akram, Nadeem
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berrier, Audrey
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    High-Speed Performance of 1.55 µm Buried Hetero-Structure Lasers with 20 InGaAsP/InGaAlAs Quantum-Wells2006In: 2006 European Conference on Optical Communications Proceedings, ECOC 2006, IEEE , 2006, 1-2 p.Conference paper (Refereed)
    Abstract [en]

    1550 nm re-grown FP lasers having 20 InGaAsP/InGaAlAs strain-balanced QWs exhibit low threshold current density, high T0 (78.0 #x000B0;C) and high resonance frequency (24 GHz) indicating that a large number of shallow barrier QWs are attractive for un-cooled high-speed direct-modulation applications.

  • 3. Blaaberg, S.
    et al.
    Mulvad, H. C. H.
    Oxenløwe, L. K.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Stoltz, B.
    All-optical characterization of large-signal modulation bandwidth of a monolithically integrated DFB-EA2009In: 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, Optical Society of America, 2009, 1283-1284 p.Conference paper (Refereed)
    Abstract [en]

    We use an all-optical method to characterize the modulation bandwidth of a DFB-EA designed for 100 Gb/s Ethernet. In a large-signal wavelength conversion set-up, we show the device has an all-optical bandwidth of 83 GHz.

  • 4.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Dynamic Characterization of Semiconductor Lasers and Intensity Modulators2009Doctoral thesis, comprehensive summary (Other academic)
    Abstract [en]

    The research work presented in this thesis deals with characterization ofdynamics of active photonic devices that are based on semiconductormaterials. The thesis contains an introduction and a collection of publishedarticles in peer reviewed international journals and conferences.The introduction starts with the physical background and a review of thesemiconductor material properties which both affects the design andfabrication of the devices and determine their performance in applicationssuch as wavelength, optical power and attenuation, drive current andvoltage, temperature sensitivity and modulation bandwidth.The next chapter of the introduction is dedicated to various kinds ofsemiconductor lasers. It describes the physical principles, steady stateoperation and the dynamical response. The laser is essentially an opticalcavity consisting of a material with optical gain inbetween two reflectivemirrors. Special attention is given to the spectral shape of the mirrorreflectivity and its effect on the laser dynamics and how these effects canbe distinguished from those of the gain material.In order to improve dynamic performance, it is common that the laser,instead of being directly modulated by varying the drive current, isconnected to a separate modulator. The next chapter is therefore devotedto electroabsorption modulators for high speed intensity modulation andtheir integration to lasers. In order to fully take advantage of the highintrinsic modulation bandwidth of these devices it is important to havea good microwave design to avoid electrical parasitics. A segmented paddesign to achieve this is briefly described.The last part of the introduction covers measurements techniques that wereimplemented to experimentally investigate above devices. A description ofthe measurement methods, including practical hints and methods forevaluation of the measured results are provided.

  • 5.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Sundgren, Petrus
    Marcks von Würtemberg, Rikard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    1.3 um InGaAs VCSELs: Influence of the Large Gain-Cavity Detuning on the Modulation and Static Performance2004In: Proc. of 30th European Conference on Optical Communication 2004, 2004Conference paper (Refereed)
  • 6.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Djupsjoebacka, Anders
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Fonjallaz, Pierre-Yves
    Tipsuwannakul, Ekawit
    KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Udvary, Eszter
    400km Transmission of STM-16 Data on Baseband and DVBT on 40GHz Subcarrier2008In: 2008 INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS, VOLS 1 AND 2, NEW YORK: IEEE , 2008, 350-352 p.Conference paper (Refereed)
    Abstract [en]

    A 400 km standard single mode fiber (SSMF) link with a single light-intensity modulator was upgraded for simultaneous transmission of STM-16 2.5Gbps baseband data and Digital-Video-Broadcast-Terrestrial DVBT utilizing a 40GHz subcarrier. An optical circulator and narrowband fiber Bragg gratings (FBG) were used to separate the signals in the optical domain and allow for simple direct baseband detection of both.

  • 7.
    Chacinski, Marek G.
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Isaksson, Mats
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Wang, Qin
    Effects of detuned loading on the modulation performance of widely tunable MG-Y lasers2008In: Semiconductor Lasers And Laser Dynamics III / [ed] Panajotov, KP; Sciamanna, M; Valle, AA; Michalzik, R, 2008, Vol. 6997, 99709-99709 p.Conference paper (Refereed)
    Abstract [en]

    The Detuning Loading Effect, i.e., the effects of the modulation performance on the position of the lasing mode relative to the Bragg reflection peak, is investigated in a Modulated Grating Y-branch laser. By proper adjustment of the lasing mode position, simultaneous chirp reduction and modulation bandwidth enhancement can be obtained. The lasing mode position is also crucial for side mode suppression ratio and output power.

  • 8.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Isaksson, Mats
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Johan Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    High-speed direct Modulation of widely tunable MG-Y laser2005In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 17, no 6, 1157-1159 p.Article in journal (Refereed)
    Abstract [en]

    The dynamic performance of the modulated-grating Y-branch laser is presented. In order to reach over 40-nm tuning range, the devices utilize an additive Vernier effect and relative tuning of two reflecting gratings. The device shows high (> 13 dBrn ex-facet) and uniform (< 1.2-dB variation) steady state output power over the tuning range, and sidemode suppression ratio > d40 dB. The laser behavior under small- and large-signal operation conditions is investigated. The laser exhibits a resonance frequency of 7.4-8.8 GHz at 80-mA bias. A 10-Gb/s eye diagram measurement showed, high extinction ratio and signal-to-noise ratio.

  • 9.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Isaksson, Mats
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    D'Oosterlinck, W.
    Morthier, G.
    Widely Tunable Wavelength Conversion 10 Gb/s Using a Modulated Grating Y-branch Laser Integrated with an Optical Amplifier2007In: OFC/NFOEC 2007 - Optical Fiber Communication and the National Fiber Optic Engineers Conference 2007, 2007Conference paper (Refereed)
    Abstract [en]

    A simple integrated tunable wavelength converter is presented. 10 Gb/s XGM conversion of signals at wavelength 1530-1560 nm to 1531-1556 nm and transmission at 2.5 Gb/s over 25 km SSMF of the converted signals were achieved.

  • 10.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Impact of losses in the Bragg section on the dynamics of detuned loaded DBR lasers2010In: IEEE Journal of Quantum Electronics, ISSN 0018-9197, E-ISSN 1558-1713, Vol. 46, no 9, 1360-1367 p.Article in journal (Refereed)
    Abstract [en]

    The dynamics of a distributed Bragg reflector laser with optical losses in the Bragg section is studied in detail. It is found that the modulation response depends not only on the detuning of the lasing wavelength from the Bragg reflectivity peak but also on the magnitude of the waveguide losses in the Bragg section. Depending on the losses, the damping of the relaxation peak can either increase or decrease when the laser is detuned on the long wavelength flank of the Bragg peak. Hence, in order to achieve maximum modulation bandwidth of the laser, the laser needs not only to have the correct detuning but also an optimized waveguide loss in the Bragg section. The physical reason for this dependence is discussed in terms of a modified rate equation model.

  • 11.
    Chacinski, Marek
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Detuned-loading effects on directly-modulated high-speed lasers2004In: 2004 International Students and Young Scientists Workshop Photonics and Microsystems, Proceedings / [ed] Dylewicz, R; Patela, S, NEW YORK: IEEE , 2004, 7-7 p.Conference paper (Refereed)
    Abstract [en]

    The modulation bandwidth and linewidth enhancement factor were investigated and found to be strongly dependent on the position of the lasing mode on the Bragg reflection peak.

  • 12.
    Chacinski, Marek
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Directly modulated lasers detuned loading effect2004In: 2004 International Students and Young Scientists Workshop - Photonics and Microsystems, 2004, 1-21 p.Conference paper (Refereed)
  • 13.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Marcks von Würtemberg, Rickard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Mogg, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Sundgren, Petrus
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Single-mode 1.27 μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics2005In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 21, 211109-1-211109-3 p.Article in journal (Refereed)
    Abstract [en]

    The dynamic performance of InGaAs/GaAs 1.27 &mu; m single-mode vertical cavity surface emitting lasers (VCSELs) is presented. In order to reach such a long wavelength, the devices utilize highly strained double-quantum wells and a large detuning between the material gain peak and cavity resonance. It is found that the large detuning improves the temperature stability of both static and modulation characteristics. A resonance frequency of 7.8-9.5 GHz and optical power of 0.30 mW in fiber was maintained throughout the investigated temperature range of 20-90 &DEG; C. The intrinsic response of the device suggests that long-wavelength InGaAs/GaAs VCSELs have the potential to be used as low cost uncooled optical transmitters at 10 Gbit/s. &COPY; 2005 American Institute of Physics. &COPY; 2005 American Institute of Physics.

  • 14.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Berggren, Jesper
    Yu, X.
    KTH.
    Marcks Von Würtemberg, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Dynamic properties of electrically p-n confined, epitaxially regrown 1.27 μm InGaAs single-mode vertical-cavity surface-emitting lasers2009In: IET optoelectronics, ISSN 1751-8768, Vol. 3, no 3, 163-167 p.Article in journal (Refereed)
    Abstract [en]

    The dynamic performance including chirp measurements of 1.27 mu m single-mode InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a large gain-cavity offset is presented. The VCSELs are based on a novel p-n confinement structure with selective area epitaxial regrowth. A resonance frequency of 9.11 GHz, a slope efficiency of 0.25 W/A and an alpha-factor of 5.7 were measured. The modulation bandwidth is limited by electrical parasitics. Eye diagrams at 5 Gb/s with 7 dB extinction ratio and Q-factor around 5 were obtained. The results are compared with the performance of oxide-confined VCSELs with similar active layer and negative gain-cavity detuning.

  • 15.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Djupsjöbacka, Anders
    Extension of 40 Gbps Link with a Directly Detected 2.5 Gbps Subcarrier Channel2009In: ICTON: 2009 11TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOLS 1 AND 2, NEW YORK: IEEE , 2009, 204-207 p.Conference paper (Refereed)
    Abstract [en]

    Simultaneous transmission was achieved of 40 Gbps at baseband and 2.5 Gbps modulation on a 50 GHz subcarrier utilizing a single 40 Gbps light-intensity modulator. A novel reception method based on optically separated baseband and single sideband channel permits direct detection of both signals with use of bandwidth limited photodiodes and dispersion tolerant transmission. This method can be used to increase the total capacity of an original 40 Gbps optical link to also carry a secondary signal.

  • 16.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Scholes, A.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Ericsson, P.
    Isaksson, Mats
    KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Hammerfeldt, S.
    Silicon optical bench for flip-chip integration of high speed widely tunable lasers2008In: Second International Conference On Advanced Optoelectronics And Lasers / [ed] Sukhoivanov, IA; Svich, VA; Shmaliy, YS, 2008, Vol. 7009, 904-904 p.Conference paper (Refereed)
    Abstract [en]

    A silicon optical bench for flip chip mounted widely tunable modulated-grating Y-branch lasers is presented. Its impact on the static and dynamic performance of the laser device is evaluated and compared with a conventional aluminum nitride carrier. The carriers exhibited similar thermal and static performance but the dynamic performance was limited by the electrode layout and the higher microwave losses of the silicon optical bench. With improved microwave design of the electrodes, flip-chip mounting on a silicon optical bench is promising for low cost assembly of high-speed multi-electrode devices

  • 17.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Scholes, A.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Ericsson, P
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Isaksson, Mats
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hammerfeldt, S.
    A silicon optical bench for flip chip mounting of widely tunable modulated grating Y-branch lasers2005In: CAOL 2005: Proceedings of the 2nd International Conference on Advanced Optoelectronics and Lasers, Vol 1 / [ed] Sukhoivanov, IA, 2005, 64-66 p.Conference paper (Refereed)
    Abstract [en]

    A silicon optical bench for flip chip mounted widely tunable lasers is presented. Its impact on the static and dynamic characteristics of the laser device is evaluated and compared with a conventional aluminium nitride carrier.

  • 18.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Stoltz, Bjorn
    Driad, Rachid
    Makon, Robert Elvis
    Hurm, Volker
    Steffan, Andreas Gerhard
    100 Gb/s ETDM Transmitter Module2010In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 16, no 5, 1321-1327 p.Article in journal (Refereed)
    Abstract [en]

    Components of a 100 Gb/s transmitter with electrical time-division multiplexing are presented as following: electrical multiplexer, driver amplifier, and large-bandwidth distributed feedback-traveling-wave electro-absorption modulator module. The performance of the parts of the transmitter, as well as the complete chain, is investigated for data operation and transmission in future 100 Gb/s Ethernet (100GbE). Clearly open eye diagrams at 100 Gb/s are demonstrated together with data transmission over 300 m long standard single mode fiber link.

  • 19.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Stoltz, Bjorn
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC. Hewlett-Packard Laboratories, United States.
    Monolithically Integrated DFB-EAT for Transmission beyond 50 Gb/s2008In: ICTON MEDITERR WINTER CONFER, New York: IEEE , 2008, 211-214 p.Conference paper (Refereed)
    Abstract [en]

    We demonstrate >= 60 GHz Electro-Absorption-Transceiver (EAT) composed of monolithically integrated Distributed-Feedback laser (DFB) with low drive voltage Electro-Absorption-Modulator. Clear eye-openings at 50 Gb/s for modulation and detection are presented. The device can be used as efficient and compact size transmitter or as detector in direct 80 Gb/s links. Transmission over 7.2 km long fibre with dispersion compensation is achieved.

  • 20.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Stoltz, Björn
    Syntune AB, Kista, Sweden .
    Driad, Rachid
    Makon, Robert Elvis
    Hurm, Volker
    Rosenzweig, Josef
    Li, Jie
    Steffan, Andreas Gerhard
    Transceiver modules utilizing travelling-wave electro-absorption modulator2010In: 2010 Conference on Optical Fiber Communication, Collocated National Fiber Optic Engineers Conference, OFC/NFOEC 2010, 2010, 5465732- p.Conference paper (Refereed)
    Abstract [en]

    Electro-Absorption-Transceiver (EAT) structures used as efficient Travelling-Wave Electro-Absorption-Modulator (TWEAM) as well as Travelling-Wave-Photo-Detector (TWPD) are investigated. Clear eye-openings at 100Gb/s for operation as modulator and/or as detector, as well as 80Gb/s transmission between a pair of EATs, are presented.

  • 21.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Stoltz, Björn
    Syntune AB, Kista, Sweden.
    Hammerfeldt, Stefan
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Monolithically Integrated 100 GHz DFB-TWEAM2009In: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 7, no 16, 3410-3415 p.Article in journal (Refereed)
    Abstract [en]

    A monolithically integrated distributed feedback (DFB) laser and traveling-wave electro-absorption modulator (TWEAM) with >= 100 GHz -dBe bandwidth suitable for Non-return-to-zero (NRZ) operation with on-off keying (OOK) is presented. The steady-state, small-signal modulation response, microwave reflection, chirp characteristic, and both data operation and transmission were investigated. The DFB-TWEAM was found to be an attractive candidate for future short distance communication in high bitrates systems.

  • 22.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Thylen, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Schatz, Richards
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Li, J.
    Djupsjobacka, A.
    Stoltz, B.
    Modulation and chirp evaluation of 100 GHz DFB-TWEAM2010In: European Conference on Optical Communication, ECOC, NEW YORK: IEEE , 2010Conference paper (Refereed)
    Abstract [en]

    The modulation and chirp performance of an InGaAsP based monolithically integrated distributed feedback (DFB) laser and travelling wave electro-absorption modulator (TWEAM) designed for 100Gb/s operation is presented. Open eye-diagrams at 100Gb/s, and error free 50Gb/s BER (limited by measurement system) were achieved. The chirp factor varied between 1.5 and 0 for absorptions between 10% and 90%.

  • 23.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    50 Gb/s modulation and/or detection with a travelling-wave electro-absorption transceiver2008In: 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference: Vols 1-8, 2008, 94-96 p.Conference paper (Refereed)
    Abstract [en]

    Electro-Absorption-Transceiver (EAT) structures used as efficient Travelling-Wave Electro-Absorption-Modulator (TWEAM) as well as Travelling-Wave-Photo-Detector (TWPD) are investigated. Clear eye-openings at 50Gb/s for modulation and for detection are presented. Transmission over 2.2km and 5km SSMF were achieved.

  • 24.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Stoltz, Björn
    Rosenzweig, Josef
    Driad, Rachid
    Makon, Robert E.
    Li, Jie
    Steffan, Andreas
    ETDM Transmitter Module for 100-Gb/s Ethernet2010In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 22, no 2, 70-72 p.Article in journal (Refereed)
    Abstract [en]

    Performance of a packaged distributed-feedback travelling-wave electroabsorption modulator module for data transmission at 100 Gb/s is presented for the first time. Clearly open eye diagrams at 80 Gb/s with an extinction ratio ( ER) of 4.9 dB and 100 Gb/s with ER 4.2 dB ( limited by measurement setup) are demonstrated together with data transmission over 100-m-long standard single-mode fiber and over dispersion-compensated 10-km fiber link.

  • 25. Chacinski, Marek
    et al.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Willén, Bo
    Stoltz, Björn
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101).
    Electroabsorption Modulators Suitable for 100-Gb/s Ethernet2008In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 29, no 9, 1014-1016 p.Article in journal (Refereed)
    Abstract [en]

    The design of a traveling-wave electroabsorption modulator (TWEAM) has been improved to decrease the drive voltage. The absorption layer was optimized and together with a novel segmentation of microwave design was introduced to increase the active modulator length. The resulting -3-dBe bandwidth of fabricated devices was estimated to be 99 GHz. Extinction ratios of 10 dB back-to-back and 6.7 dB after transmission over 2.2-km long fiber were measured with an incident drive voltage of only 2 V peak to peak. This TWEAM performance is believed to constitute a new state of the art for modulators suitable for 100-Gb/s Ethernet with on-off keying.

  • 26.
    Chaciński, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. TE Connectivity, Bruttovägen 7, Järfälla, Sweden .
    Westergren, U.
    100GHz electro-optical modulator chip2011In: Opto-Electron. Commun. Conf., OECC, 2011, 59-60 p.Conference paper (Refereed)
    Abstract [en]

    Recent development on high speed electro-optical modulator is presented. The performance of 100GHz modulation bandwidth enabling for 100Gbps On-Off-Keying operation is shown.

  • 27. Derksen, Rainer. H.
    et al.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Schubert, Colja
    Bach, Heinz-Gunter
    Driad, Rachid
    Hurm, Volker
    Makon, Robert E.
    Li, Jie
    Steffan, Andreas G.
    Cost-Efficient High-Speed Components for 100 Gigabit Ethernet Transmission on One Wavelength Only: Results of the HECTO Project2013In: IEEE Communications Magazine, ISSN 0163-6804, E-ISSN 1558-1896, Vol. 51, no 5, 136-144 p.Article in journal (Refereed)
    Abstract [en]

    In 2010, the standard for 100GbE was approved, which specifies the transmission of 100 Gb/s via 4 wavelength channels of 25 Gb/s each. A solution based on a 100 Gb/s single wavelength channel is capable of significant cost reductions should the required components be available. Within the HECTO project, we developed components suitable for single-wavelength 100 Gb/s transmission. In this article, the project is described - its organization, objectives, possible impacts, and results - including the successful demonstration in a final field trial. A complete ETDM system utilizing the monolithically integrated transmitter and receiver modules developed in the project was built to transmit 112 Gb/s over 42 km standard single-mode fiber. Finally, we attempt an outlook on the prospective development of Ethernet standardization beyond 100GbE.

  • 28. Giuliani, G.
    et al.
    Donati, S.
    Villafranca, A.
    Lasobras, J.
    Garces, I.
    Chacinski, Marek
    Dipartimento di Elettronica, Università di Pavia, Pavia, Italy.
    Schatz, Richard
    Dipartimento di Elettronica, Università di Pavia, Pavia, Italy.
    Kouloumentas, C.
    Klonidis, D.
    Tomkos, I.
    Landais, P.
    Escorihuela, R.
    Rorison, J.
    Pozo, J.
    Fiore, A.
    Moreno, P.
    Rossetti, M.
    Elsasser, W.
    Von Staden, J.
    Huyet, G.
    Saarinen, M.
    Pessa, M.
    Leinonen, P.
    Vilokkinen, V.
    Sciamanna, M.
    Danckaert, J.
    Panajotov, K.
    Fordell, T.
    Lindberg, A.
    Hayau, J. -F
    Poette, J.
    Besnard, P.
    Grillot, F.
    Pereira, M.
    Nelander, R.
    Wacker, A.
    Tredicucci, A.
    Green, R.
    Round-Robin Measurements of Linewidth Enhancement Factor of Semiconductor Lasers in COST 288 Action2007In: Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on, 2007, 4385967- p.Conference paper (Refereed)
    Abstract [en]

    Round-robin measurements on the linewidth enhancement factor are carried out in many laboratories participating to EU COST 288 Action. Up to 7 different techniques are applied to DFB, VCSELs, QCL, and QD lasers, and results are compared.

  • 29. Isaksson, M.
    et al.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Wesstrom, J. -O
    10 Gb/s direct modulation of 40 nm tunable modulated-grating Y-branch laser2005In: Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC, 2005, Vol. 2, 117-119 p.Conference paper (Refereed)
    Abstract [en]

    High speed properties of a directly modulated widely tunable MG-Y laser have been evaluated. Small signal response and 10 Gb/s NRZ modulation were performed within the 40 nm tuning range.

  • 30.
    Isaksson, Mats
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Wesström, J. -O
    10 Gb/s direct modulation of 40 nm tunable modulated-grating Y-branch laser2006In: OFC/NFOEC Technical Digest, Optical Society of America, 2006Conference paper (Refereed)
    Abstract [en]

    High speed properties of a directly modulated widely tunable MG-Y laser have been evaluated. Small signal response and 10 Gb/s NRZ modulation were performed within the 40 nm tuning range.

  • 31. Li, J.
    et al.
    Schubert, C.
    Derksen, R. H.
    Makon, R. E.
    Hurm, V.
    Djupsjöbacka, A.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101).
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101).
    Bach, H. -G
    Mekonnen, G. G.
    Steffan, A. G.
    Driad, R.
    Walcher, H.
    Rosenzweig, J.
    112 Gb/s field trial of complete ETDM system based on monolithically integrated transmitter & receiver modules for use in 100GbE2010In: 2010 36th European Conference and Exhibition on Optical Communication (ECOC), 2010, 5621466- p.Conference paper (Refereed)
    Abstract [en]

    112 Gb/s field trial demonstration of a complete ETDM system based on monolithically integrated transmitter and receiver modules was achieved for the first time, with BER performance below FEC error-free threshold at 231-1 PRBS tributary data word-length.

  • 32. Rong, Y.
    et al.
    Ge, Y.
    Huo, Y.
    Fiorentino, M.
    Kamins, T. I.
    Ochalski, T.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Harris, J. S.
    High speed optical modulation in Ge quantum wells using quantum confined stark effect2009In: Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on, 2009, 157-159 p.Conference paper (Refereed)
    Abstract [en]

    We designed the coplanar high-speed modulator with Ge/SiGe quantum wells, and demonstrated 25GHz of modulation with 3.125GHz of eye diagram using quantum-confined stark effect.

  • 33. Rong, Y.
    et al.
    Huo, Y.
    Fei, E. T.
    Fiorentino, M.
    Tan, M. R. T.
    Ochalski, T.
    Huyet, G.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Kamins, T. I.
    Harris, J. S.
    High speed optical modulation in Ge quantum wells using quantum confined stark effect2012In: Frontiers of Optoelectronics, ISSN 2095-2759, Vol. 5, no 1, 82-89 p.Article in journal (Refereed)
    Abstract [en]

    We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based on processes for standard Si electronics and is suitable for mass-production. We present observations of quantum confinement and quantum-confined Stark effect (QCSE) electroabsorption in Ge quantum wells (QWs) with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V QWstructures at similar wavelengths. We also demonstrated a modulator, with eye diagrams of up to 3. 5 GHz, a small driving voltage of 2. 5 V and a modulation bandwidth at about 10 GHz. Finally, carrier dynamics under ultra-fast laser excitation and high-speed photocurrent response are investigated.

  • 34. Schubert, C.
    et al.
    Li, J.
    Bach, H. -G
    Mekonnen, G. G.
    Makon, R. E.
    Derksen, R. H.
    Hurm, V.
    Djupsjöbacka, A.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101).
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101).
    Steffan, A. G.
    Driad, R.
    Characterization of a pin-TWA photoreceiver in OOK-system experiments up to 112 Gb/s2010In: 2010 36th European Conference and Exhibition on: Optical Communication (ECOC), 2010, 5621372- p.Conference paper (Refereed)
    Abstract [en]

    A high-speed pin-TWA photoreceiver, comprising a photodiode and a travelling-wave amplifier, monolithically integrated on a single InP chip, are characterized in OOK system experiments. Error-free performance below the FEC limit is achieved in back-to-back measurements up to 112 Gb/s.

  • 35. Silfvenius, C.
    et al.
    Swillo, M.
    Claesson, J.
    Forsberg, E.
    Akram, N.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101). KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    InP-based monolithically integrated 1310/1550nm diplexer/triplexer2008In: Proceedings of SPIE - The International Society for Optical Engineering, 2008Conference paper (Refereed)
    Abstract [en]

    We demonstrate a low cost, non-butt-joint, wide-gain integrated device comprising 1550nm lasers, wavelength selective couplers and 1310nm sensitive photodiodes for diplexer arrays for FTTH use.

  • 36. Udvary, E.
    et al.
    Bartoss, V.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Berceli, T.
    Fonjallaz, Pierre-Yves
    KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Reduction of dispersion induced distortions by semiconductor optical amplifiers2008In: 2008 MIKON CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2008, 169-172 p.Conference paper (Refereed)
    Abstract [en]

    An approach is presented to reduce the chromatic dispersion-induced distortions in optical links carrying combined baseband and microwave signals. This new method is based on the interplay of intensity dependent phase modulation in semiconductor optical amplifiers (SOAs) and fiber nonlinearities. Theoretical and experimental results are demonstrated for a 400 km long optical link.

  • 37. Udvary, E.
    et al.
    Berceli, T.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Fonjallaz, Pierre-Yves
    KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Reduction of Dispersion Induced Distortions in Radio over Fibre links2008In: 2008 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, 2008, 1086-1089 p.Conference paper (Refereed)
    Abstract [en]

    The application of microwave / millimeter-wave optical links for future mobile broadband services is limited by the dispersion of the fibre. We present an approach to reduce the chromatic dispersion-induced distortions in optical links carrying combined baseband and microwave signals. This new method is based on the interplay of intensity dependent phase modulation in semiconductor optical amplifiers (SOAs) and fibre nonlinearities. Theoretical and experimental results are demonstrated for different long optical links. The results show that the frequency notches caused by the dispersion-induced carrier suppression effect may be sharply alleviated and the transmitted digital signal performance can be improved. Investigations on a 400 km long fibre link proved the previous statement.

  • 38. Villafranca, A.
    et al.
    Lasobras, J.
    Garces, I.
    Giuliani, G.
    Donati, S.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kouloumentas, C.
    Klonidis, D.
    Tomkos, I.
    Landais, P.
    Escorihuela, R.
    Rorison, J.
    Pozo, J.
    Fiore, A.
    Moreno, P.
    Rossetti, M.
    Elsasser, W.
    Von Staden, J.
    Huyet, G.
    Saarinen, M.
    Pessa, M.
    Leinonen, P.
    Vilokkinen, V.
    Sciamanna, M.
    Danckaert, J.
    Panajotov, K.
    Fordell, T.
    Lindberg, A.
    Hayau, J. -F
    Poette, J.
    Besnard, P.
    Grillot, F.
    Linewidth Enhancement Factor of Semiconductor Lasers: Results from Round-Robin Measurements in COST 2882007In: 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, 2007Conference paper (Refereed)
    Abstract [en]

    Round-robin measurements on the linewidth enhancement factor are carried out within several laboratories participating to EU COST 288 action. The alpha-factor is measured by applying up to 7 different techniques. The obtained results are compared.

  • 39.
    Wang, Ke
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101). Acreo AB, Kista, Sweden .
    Li, J.
    Djupsjöbacka, A.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101).
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101).
    Popov, Sergei
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101).
    Jacobsen, Gunnar
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101). Acreo AB, Kista, Sweden .
    Hurm, V.
    Makon, R. E.
    Driad, R.
    Walcher, H.
    Rosenzweig, J.
    Steffan, A. G.
    Mekonnen, G. G.
    Bach, H. -. G.
    100 Gb/s complete ETDM system based on monolithically integrated transmitter and receiver modules2010In: 2010 Conference on Optical Fiber Communication, Collocated National Fiber Optic Engineers Conference, OFC/NFOEC 2010, 2010, 5465571- p.Conference paper (Refereed)
    Abstract [en]

    A complete ETDM system based on monolithically integrated transmitter and receiver modules was demonstrated with BER performance below FEC threshold up to 107 Gb/s. ETDM signal at 112 Gb/s with clear eye opening was also observed.

  • 40.
    Wang, Ke
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Optics (Closed 20120101). Beijing Institute of Technology, China .
    Li, J.
    Djupsjöbacka, A.
    Chaciński, Marek
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Material Physics, MF (Closed 20120101).
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Popov, Sergei Yu
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Optics (Closed 20120101).
    Jacobsen, G.
    Hurm, V.
    Makon, R. E.
    Driad, R.
    Walcher, H.
    Rosenzweig, J.
    Steffan, A. G.
    Giorgis Mekonnen, G.
    Bach, H. -G
    Li, Z.
    Friberg, Ari
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Optics (Closed 20120101).
    100-112 Gbit/s complete ETDM systems based on monolithically integrated transmitter and receiver modules2011In: Journal of Beijing Institute of Technology (English Edition), ISSN 1004-0579, Vol. 20, no 3, 410-414 p.Article in journal (Refereed)
    Abstract [en]

    Traditional intensity modulated two-level electrical time-division multiplexing (ETDM) transmission systems working at 100-112 Gbit/s were investigated. The complete ETDM systems based on monolithically integrated transmitter and receiver modules were demonstrated with bit-error-rate (BER) performance of 10-8 at 107 Gbit/s, and near error-free standard forward error correction (FEC) threshold (2×10-3) at 112 Gbit/s. The experiment results showed that directly modulated high-speed ETDM transmission systems with the symbol rates at 100 Gbaud and beyond were promising candidate for cost-effective 100 GbE applications and might be a preform of the next generation of Terabit/s Ethernet.

  • 41.
    Westergren, Urban
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Compact Modulators for Fiber-Optical Communications at 100Gb/s and Above2011In: 2011 13TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON), IEEE , 2011, 5970771- p.Conference paper (Refereed)
    Abstract [en]

    The state of the art and future expectations are discussed regarding efficient semiconductor modulators for on-off keying and more advanced modulation formats for output bitrates of 100 Gb/s and above. The development of compact transmitters with laser and light-intensity modulator suitable for 100 Gb/s Ethernet is described, as well as future prospects for monolithically integrated transmitters for more advanced modulation formats.

  • 42.
    Westergren, Urban
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
    Compact and efficient modulators for 100 Gb/s ETDM for telecom and interconnect applications2009In: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 95, no 4, 1039-1044 p.Article in journal (Refereed)
    Abstract [en]

    State of the art and prospects regarding semiconductor compact modulators and transmitters for on-off keying and more advanced modulations formats for output bitrates of 100 Gb/s and above are discussed. The implementation of a monolithically integrated transmitter comprising laser and light-intensity modulator is described and the prospects for a fully integrated transmitter for more advanced modulation formats elucidated, all for 100 Gb/s output bitrate.

  • 43.
    Zhang, Andy Zhenzhong
    et al.
    Acreo, Sweden .
    Wang, Qin
    Karlsson, Stefan
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). Kista Photonics Resarch Center, Sweden.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). Kista Photonics Resarch Center, Sweden.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). Kista Photonics Resarch Center, Sweden.
    Fonjallaz, Pierre-Yves
    Almqvist, Susanne
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101).
    Thylen, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). Kista Photonics Resarch Center, Sweden.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Honecker, Joerg
    Steffan, Andreas
    Fabrication of an electro-absorption transceiver with a monolithically integrated optical amplifier for fiber transmission of 40-60 GHz radio signals2011In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 26, no 1, 014042- p.Article in journal (Refereed)
    Abstract [en]

    We report on the fabrication of a monolithically integrated semiconductor optical amplifier (SOA) and a reflective electro-absorption transceiver (EAT) for 40-60 GHz radio-over-fiber applications. The EAT can either function as a transmitter (reflective modulator) or as a receiver (photodetector) depending on operation mode. The SOA and the EAT sections are based on different InGaAsP multiple quantum-well active layers connected by a butt joint. Benzocyclobutene is used to reduce the capacitance beside the ridge mesa. Devices are designed to have a peaked response at the operating frequency through the design of microwave waveguides on top of the devices. The packaged device exhibits at 0.1 mW optical input power an amplified DC responsivity of 18.5 mA mW(-1) and a modulation efficiency of 0.67 mW V-1. The estimated radio frequency loss at 40 GHz of an optical link consisting of two SOA-EAT devices was 23 dB using an unmodulated optical input carrier to the transmitter of 0.94 mW.

  • 44.
    Zhang, Ziyang
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Dainese, Matteo
    Replisaurus AB.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Qiu, Min
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    High-quality-factor micro-ring resonator in amorphous-silicon on insulator structure2008In: ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers, 2008, 329-332 p.Conference paper (Refereed)
    Abstract [en]

    Micro-ring resonators have been fabricated in hydrogenated amorphous silicon on silica structure. The intrinsic quality factor is estimated as 56,000 and the notch depth is ̃ 30dB. The intrinsic loss per unit length is 15.3dB/cm, comparable to 9.16dB/cm in the single-crystalline silicon ring of the same geometry.

1 - 44 of 44
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf