Change search
Refine search result
1 - 23 of 23
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Anand, Srinivasan
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Mulot, Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Berrier, Audrey
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Ferrini, R.
    Houdre, R.
    Kamp, M.
    Forchel, A.
    Towards realization of high quality 2D-photonic crystals in InP/GaInAsP/InP2004In: 2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, p. 311-313Conference paper (Refereed)
    Abstract [en]

    Two-dimensional photonic crystals (PhCs) were etched into InP/GaInAsP/InP planar waveguides using chlorine based chemical assisted ion beam etching (CAIBE). Etching mechanisms and process parameters crucial for high quality PhC definition are discussed, with special attention to the lag-effect. The processed PhCs were optically characterized by measuring transmission through simple slabs and one-dimensional cavities. The optical properties inside the photonic bandgap are much better compared to both previously reported CAME results and results obtained with other etching methods. In particular, we measured a record quality factor of 310 for one-dimensional cavities fabricated in this material system.

  • 2.
    Anand, Srinivasan
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Qiu, Min
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Mulot, Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Swillo, Marcin
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Jaskorzynska, Bozena
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Karlsson, Anders
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    High aspect ratio etching and characterization of 2D-photonic crystals in InP/InGaAsP/InP heterostructures2004In: Photonics: Design, Technology, And Packaging / [ed] Jagadish, C; Choquette, KD; Eggleton, BJ; Nener, BD; Nugent, KA, SPIE - International Society for Optical Engineering, 2004, p. 78-89Conference paper (Refereed)
    Abstract [en]

    We report on the fabrication and characterization of 2D photonic crystals (PhCs) in InP/InGaAsP/InP heterostructures. It is demonstrated that Ar/C12 based chemically assisted ion beam etching (CAIBE) is a very promising method to obtain high aspect ratio etching of PhCs in the InP-based materials. With this process, it is possible to obtain PC-holes as deep as 3 microns even for feature (PhC-hole) sizes as small as 200-250 nm. The optical characteristics of the fabricated PhC-based elements/devices such as line-defect waveguides, in-plane resonant cavities and drop-filter based on contra-directional coupling will be reported. The devices were measured using end-fire coupling and the obtained results were simulated using the 2D finite difference time domain (FDTD) method including an effective loss-approximation. The etched PhC-waveguides show low transmission losses, less than 1 dB/100 mum. A quality factor of 400 for a 6 micron long cavity with 6-hole mirrors is obtained. Finally, drop-functionality in a PhC-based filter using contra-directional coupling is demonstrated.

  • 3. Aubin, G.
    et al.
    Talneau, A.
    Uddhammar, Anna
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berrier, Audrey
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Mulot, Mikael
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Highly dispersive photonic crystal-based guiding structures2006In: CLEO/QELS 2006, Optical Society of America, 2006, p. 972-974Conference paper (Refereed)
    Abstract [en]

    Propagating modes supported by Photonic-Crystal guiding structures can demonstrate very high group velocity dispersion close to a cut-off. We investigate here the wavelength dependence of the dispersion for different Photonic Crystal structures.

  • 4. Benisty, H.
    et al.
    Weisbuch, C.
    Olivier, S.
    Houdré, R.
    Ferrini, R.
    Leuenberger, D.
    Wild, B.
    Lombardet, B.
    Qiu, Min
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Mulot, Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Karlsson, Anders
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Swillo, Marcin
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Jazkorzynska, B.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Agio, M.
    Kafesaki, M.
    Soukoulis, C. M.
    Talneau, A.
    Kamp, M.
    Forchel, A.
    Moosburger, J.
    Happ, T.
    Duan, G. -H
    Cuisin, C.
    Chandouineau, J. -P
    Drisse, O.
    Gaborit, F.
    Legouézigou, L.
    Legouézigou, O.
    Lelarge, F.
    Poingt, F.
    Pommereau, F.
    Thedrez, B.
    Low-loss photonic-crystal and monolithic InP integration: Bands, bends, lasers, filters2004In: Photonic Crystal Materials and Devices II, SPIE - International Society for Optical Engineering, 2004, p. 119-128Conference paper (Refereed)
    Abstract [en]

    Practical realizations of 2D (planar) photonics crystal (PhC) are either on a membrane or etched through a conventional heterostructure. While fascinating objects can emerge from the first approach, only the latter approach lends itself to a progressive integration of more compact PhC's towards monolithic PICs based on InP. We describe in this talk the various aspects from technology to functions and devices, as emerged from the European collaboration "PCIC". The main technology tour de force is deep-etching with aspect ratio of about 10 and vertical sidewall, achieved by three techniques (CAIBE, ICP-RIE, ECR-RIE). The basic functions explored are bends, splitters/combiners, mirrors, tapers, and the devices are filters and lasers. At the end of the talk, I will emphasize some positive aspects of "broad" multimode PhC waveguides, in view of compact add-drop filtering action, notably.

  • 5. Benyattou, T.
    et al.
    Martin, M.
    Orobtchouk, R.
    Talneau, A.
    Berrier, Audrey
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Mulot, Mikael
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Optical Bloch waves studied by near optical field microscopy2005In: Journal of the Korean Physical Society, ISSN 0374-4884, E-ISSN 1976-8524, Vol. 47, p. S72-S75Article in journal (Refereed)
    Abstract [en]

    Photonic bandgap structures are very promising for the integration of optical function at the nanoscale level and particularly 2D structures perforated on a slab waveguide. In this context, photonic crystal waveguides obtained by removing rows of holes in the periodic structure are very interesting. We will present here, results of near field optical microscopy conducted on PCW. With a Fourier transform analysis of the image, we can image the Bloch waves propagating in the waveguide. The results are compared to FDTD simulations and we will show that the images obtained correspond to the electric field. Such result allows us to study the interaction of the optical tip with the electromagnetic field. 2D FDTD simulations of 1D photonic crystal interaction with a SNOM tip is presented. The results obtained confirm that the SNOM signal is mainly related to the electric field.

  • 6.
    Berrier, Audrey
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Mulot, Mikael
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Malm, Gunnar
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Electrical conduction through a 2D InP-based photonic crystal - art. no. 63220J2006In: Tuning the Optic Response of Photonic Bandgap Structures III / [ed] Braun, PV; Weiss, SM, 2006, Vol. 6322, p. J3220-J3220Conference paper (Refereed)
    Abstract [en]

    This work investigates the current transport across two-dimensional PhCs dry etched into InP-based low-index-contrast vertical structures using Ar/Cl-2 chemically assisted ion beam etching. The electrical conduction through the PhC field is influenced by the surface potential at the hole sidewalls, which is modified by dry etching. The measured current-voltage (I-V) characteristics are linear before but show a current saturation at higher voltages. This behaviour is confirmed by simulations performed by ISE-TCAD software. We investigate the dependence of the conductance of the PhC area as a function of the geometry of the photonic crystal as well as the material parameters. By comparing the experimental and simulated conductance of the PhC, we deduce that the Fermi level is pinned at 0.1 eV below the conduction band edge. The method presented here can be used for evaluating etching processes and surface passivation methods. It is also applicable for other material systems and sheds new light on current driven PhC tuning.

  • 7.
    Berrier, Audrey
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Mulot, Mikael
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Talneau, A.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Feature size effects in Ar/Cl-2 chemically assisted ion beam etching of InP-based protonic crystals2006In: 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, NEW YORK: IEEE , 2006, p. 341-344Conference paper (Refereed)
    Abstract [en]

    This work addresses feature size effects (the lag-effect and roughness development) in chemically assisted ion beam etching (CAIBE) etching of InP-based photonic crystals. Photonic crystal fields The slope of the etch,with varying hole size and periods were etched with different etching times. depth versus diameter cures (lag-curves) reveals an aspect ratio dependence, with an etch limiting aspect ratio of the order of 25. A model of the etch rate specific to Ar/Cl-2 CAIBE is proposed. We calculate the etch rate using a physico-chemical model which takes in to account the effect of Ar-ion sputtering and surface chemical reactions. lit addition, it combines the aspect ratio dependence of the gas conductance of the etched holes. Finally, the bottom roughness of the etched holes is examined; its origin and evolution are discussed.

  • 8.
    Berrier, Audrey
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Mulot, Mikael
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Talneau, A.
    Ferrini, R.
    Houdre, R.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Feature size effects in chemically assisted ion beam etching of InP-based photonic crystals - art. no. 6327072006In: Nanoengineering: Fabrication, Properties, Optics, and Devices III / [ed] Dobisz, EA; Eldada, LA, BELLINGHAM, WA: SPIE-INT SOC OPTICAL ENGINEERING , 2006, Vol. 6327, p. 32707-32707Conference paper (Refereed)
    Abstract [en]

    This work addresses feature size effects (the lag-effect and roughness development) in chemically assisted ion beam etching (CAIBE) etching of InP-based photonic crystals. Photonic crystal fields with varying hole size and periods were etched with different etching times. The slope of the etch depth versus diameter curves (lag-curves) reveals a hole size dependence, with a critical aspect ratio higher than 25. A model for the etch rate specific to Ar/Cl-2 CAIBE is proposed. We calculate the etch rate using a physico-chemical model which takes in to account the effect of Ar-ion sputtering and surface chemical reactions. In addition, it combines the aspect ratio dependence of the gas conductance of the etched holes. The origin and evolution of the bottom roughness of the etched holes is examined. The impact of the feature size dependence of the etching on the photonic crystal optical properties is then assessed by measuring the quality-factor of one-dimensional Fabry-Perot cavities using the Internal Light Source method, and discussed in terms of hole shape and depth. A systematic trend between the determined quality factor (Q) and the lag-effect is evidenced: Q decreases from about 250 to 60 when the hole depth drops from 5 mu m to 2 mu m.

  • 9.
    Berrier, Audrey
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Mulot, Mikaël
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Talneau, A.
    CNRS, LPN.
    Ferrini, R.
    Ecole Polytech Fed Lausanne, Lab Optoelect Mat Mol.
    Houdre, R.
    Ecole Polytech Fed Lausanne, Inst Photon & Elect Quant.
    Characterization of the feature-size dependence in Ar/Cl2 chemically assisted ion beam etching of InP-based photonic crystal devices2007In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 25, no 1, p. 1-10Article in journal (Refereed)
    Abstract [en]

    The authors address feature-size dependence in Ar/Cl-2, chemically assisted ion beam etching (CAIBE) in the context of the fabrication of photonic crystal (PhC) structures. They systematically investigate the influence of various parameters such as hole diameter (115-600 nm), etch duration (10-60 min), and ion beam energy (300-600 eV) on PhC etching in InP with Ar/Cl-2, CAIBE. For a 60 min etching at an Ar-ion energy of 400 eV, the authors report an etch depth of 5 mu m for hole diameters d larger than 300 nm; the etch depth is in excess of 3 mu m for d larger than 200 nm. The evolution of roughness at the bottom of the etched holes and its dependence on hole size and etching conditions,is discussed. The physical mechanism of the observed feature-size dependent etching (FSDE) is then discussed and the effect of the process parameters is qualitatively understood using a model combining the effect of ion sputtering and surface chemical reactions. Finally, the effect of FSDE on the PhC optical properties is assessed by measuring the quality factor of one-dimensional Fabry-Perot PhC cavities. The measured quality factors show a clear trend with the etch depth: the cavity Q increases as the etch depth increases.

  • 10.
    Berrier, Audrey
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Mulot, Mikaël
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Malm, Gunnar
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Carrier transport through a dry-etched InP-based two-dimensional photonic crystal2007In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 101, no 12, p. 123101-1-123101-6Article in journal (Refereed)
    Abstract [en]

    The electrical conduction across a two-dimensional photonic crystal (PhC) fabricated by Ar/Cl-2 chemically assisted ion beam etching in n-doped InP is influenced by the surface potential of the hole sidewalls, modified by dry etching. Carrier transport across photonic crystal fields with different lattice parameters is investigated. For a given lattice period the PhC resistivity increases with the air fill factor and for a given air fill factor it increases as the lattice period is reduced. The measured current-voltage characteristics show clear ohmic behavior at lower voltages followed by current saturation at higher voltages. This behavior is confirmed by finite element ISE TCAD (TM) simulations. The observed current saturation is attributed to electric-field-induced saturation of the electron drift velocity. From the measured and simulated conductance for the different PhC fields we show that it is possible to determine the sidewall depletion region width and hence the surface potential. We find that at the hole sidewalls the etching induces a Fermi level pinning at about 0.12 eV below the conduction band edge, a value much lower than the bare InP surface potential. The results indicate that for n-InP the volume available for conduction in the etched PhCs approaches the geometrically defined volume as the doping is increased.

  • 11.
    Berrier, Audrey
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Mulot, Mikaël
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Swillo, Marcin
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Qiu, Min
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Thylén, Lars
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Talneau, A.
    CNRS, Lab Photon & Nanostruct.
    Anand, Srinivasan
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Negative Refraction at Infrared Wavelengths in a Two-Dimensional Photonic Crystal2004In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 93, no 073902Article in journal (Refereed)
    Abstract [en]

    We report on the first experimental evidence of negative refraction at telecommunication wavelengths by a two-dimensional photonic crystal field. Samples were fabricated by chemically assisted ion beam etching in the InP-based low-index constrast system. Experiments of beam imaging and light collection show light focusing by the photonic crystal field. Finite-difference time-domain simulations confirm that the observed focusing is due to negative refraction in the photonic crystal area.

  • 12.
    Ferrini, R.
    et al.
    Ecole Polytech Fed Lausanne, Int Photon & Elect Quant.
    Berrier, Audrey
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Dunbar, L. A.
    Ecole Polytech Fed Lausanne, Int Photon & Elect Quant.
    Houdré, R.
    Ecole Polytech Fed Lausanne, Int Photon & Elect Quant.
    Mulot, Mikaël
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    de Rossi, S.
    CNRS, Lab Photon & Nanostruct.
    Talneau, A.
    CNRS, Lab Photon & Nanostruct.
    Minimization of out-of-plane losses in planar photonic crystals by optimizing the vertical waveguide2004In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 85, no 18, p. 3998-4000Article in journal (Refereed)
    Abstract [en]

    A two-dimensional phenomenological approach previously developed for the modeling of out-of-plane losses in low refractive index contrast planar photonic crystals (PPhCs) is used to study the dependence of the different loss terms on the planar waveguide parameters. It is demonstrated that: (i) Losses can be minimized by designing vertical heterostructures optimized for a given technological process and/or for a given hole shape; and (ii) any small reduction of the loss value has a strong impact on the optical performances of PPhC structures.

  • 13. Martz, J.
    et al.
    Wild, B.
    Ferrini, R.
    Dunbar, L. A.
    Mulot, Mikael
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Houdré, R.
    Zuppiroli, L.
    Tuning the optical properties of planar photonic crystals by liquid crystal infiltration2005In: Proc SPIE Int Soc Opt Eng, 2005, p. 1-14Conference paper (Refereed)
    Abstract [en]

    Recently there has been a growing amount of attention devoted to tuneable photonic crystals (PhCs) where the optical response of PhC structures can be dynamically modified. We will show how infiltrating planar PhCs with a synthetic organic material allows the trimming and tuning of their optical properties. The potential of PhC infiltration will be demonstrated for InP-based planar PhCs consisting of a hexagonal array of air holes (hole diameter = 200 - 400 nm; air filling factor = 0.40-0.50) etched through a planar waveguide in which light emitters (i.e. quantum wells) were embedded to enable optical measurements. The PhC pores were infiltrated with LC-K15 (5CB) nematic liquid crystals (LCs) in a specifically designed vacuum chamber, thereby changing the refractive index contrast between the holes and the semiconductor (trimming). Moreover, the possibility of tuning the optical response of PhCs by an external perturbation (i.e. temperature) was demonstrated. The change of the PhC optical properties due to infiltration and temperature tuning was studied both experimentally and theoretically. Experimental measurements were compared to theoretical calculations in order to obtain information on the in-filling efficiency, the LC refractive index, and the molecule orientation inside the holes. In the first case, optical measurements were performed as a function of temperature, whilst the average LC director configuration was determined by comparing transmission spectra in the transverse electric and magnetic polarization directions.

  • 14.
    Mulot, Mikael
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Ferrini, R.
    Wild, B.
    Houdre, R.
    Moosburger, J.
    Forchel, A.
    Fabrication of two-dimensional InP-based photonic crystals by chlorine based chemically assisted ion beam etching2004In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 22, no 2, p. 707-709Article in journal (Refereed)
    Abstract [en]

    Two-dimensional photonic crystals (PhCs) were etched into InP/(Ga,In)(As,P) planar waveguides using chlorine-based chemical assisted ion beam etching (CAIBE). The processed PhCs were optically characterized by measuring transmission through simple slabs and one-dimensional cavities. The optical performances inside the photonic band gap are much better compared to both previously reported CAIBE results and results obtained with other etching methods. In particular, we measured a record quality factor of 310 for one-dimensional cavities fabricated in this material system.

  • 15.
    Mulot, Mikael
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Swillo, Marcin
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Qiu, Min
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Strassner, Martin
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Hede, M.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Fabry-Perot cavities based on two-dimensional photonic crystals fabricated in InP membranes2004In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 10, p. 5928-5930Article in journal (Refereed)
    Abstract [en]

    We measured the transmission and analyzed out-of-plane loss in Fabry-Perot filters based on photonic crystals etched in a suspended InP membrane. The resonant cavity of the Fabry-Perot filter is based on a single row line defect introduced in a triangular lattice of air holes. The transmission spectrum of these structures is measured by using the end-fire method. We measured a cavity quality factor of 3200 for a resonance wavelength in the 1.5 mum wavelength range. We identify that radiation through the holes at both extremities of the resonant cavity largely contributes to the loss in the device.

  • 16.
    Mulot, Mikaël
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Two-Dimensional Photonic Crystals in InP-based Materials2004Doctoral thesis, comprehensive summary (Other scientific)
    Abstract [en]

    Photonic crystals (PhCs) are structures periodic in thedielectric constant. They exhibit a photonic bandgap, i.e., arange of wavelengths for which light propagation is forbidden.Engineering of defects in the PhC lattice offers new ways toconfine and guide light. PhCs have been manufactured usingsemiconductors and other material technologies. This thesisfocuses on two-dimensional PhCs etched in InP-based materials.Only recently, such structures were identified as promisingcandidates for the realization of novel and advanced functionsfor optical communication applications.

    The primary focus was on fabrication and characterization ofPhC structures in the InP/GaInAsP/InP material system. Thedemands on fabrication are very high: holes as small as100-300nm in diameter have to be etched at least as deep as 2µm. Thus, different etch processes had to be explored andspecifically developed for InP. We have implemented an etchingprocess based on Ar/Cl2chemically assisted ion beam etching (CAIBE), thatrepresents the state of the art PhC etching in InP.

    Different building blocks were manufactured using thisprocess. A transmission loss of 10dB/mm for a PhC waveguide, areflection of 96.5% for a 4-row mirror and a record qualityfactor of 310 for a 1D cavity were achieved for this materialsystem. With an etch depth of 4.5 µm, optical loss wasfound to be close to the intrinsic limit. PhC-based opticalfilters were demonstrated using (a) a Fabry-Pérot cavityinserted in a PhC waveguide and (b) a contra-directionalcoupler. Lag effect in CAIBE was utilized positively to realizehigh quality PhC taper sections. Using a PhC taper, a couplingefficiency of 70% was demonstrated from a standard ridgewaveguide to a single line defect PhC waveguide.

    During the course of this work, InP membrane technology wasdeveloped and a Fabry-Pérot cavity with a quality factorof 3200 was demonstrated.

    Keywords:photonic crystals, photonic bandgap materials,indium phosphide, dry etching, chemically assisted ion beametching, reactive ion etching, electron beam lithography,photonic integrated circuits, optical waveguides, resonantcavities, optical filtering, finite difference time domain,plane wave expansion.

  • 17.
    Qiu, Min
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Mulot, Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Swillo, Marcin
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Srinivasan, Anand
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Jaskorzynska, Bozena
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Karlsson, Anders
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Thylén, Lars
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Optical add/drop filters using two-dimensional photonic crystals2004In: Proceedings of SPIE - The International Society for Optical Engineering, 2004, p. 286-295Conference paper (Refereed)
    Abstract [en]

    Optical add/drop filters using two-dimensional photonic crystals (PC's) are presented for different designs. In-plane channel add/drop filter composed of two waveguides and an optical resonator system is very compact, but sensitive to the losses. While add/drop filter based on a contra-directional PC waveguide coupler is much more robust to the losses, and reasonable compactness is possible with careful designs. The possibility to utilize the PC dispersion properties to design optical filters is also discussed briefly.

  • 18. Talneau, A.
    et al.
    Agio, M.
    Soukoulis, C. M.
    Mulot, Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Lalanne, P.
    High-bandwidth transmission of an efficient photonic-crystal mode converter2004In: Optics Letters, ISSN 0146-9592, E-ISSN 1539-4794, Vol. 29, no 15, p. 1745-1747Article in journal (Refereed)
    Abstract [en]

    We have investigated both theoretically and experimentally the spectral behavior and the transmission and reflection performance of a photonic-crystal (PhC) mode converter upon an InP substrate. This taper exhibits 70% transmission efficiency on an 80-nm bandwidth when it couples a ridge access guide to a strongly confined single-missing-row PhC guide. Such a taper design included in a PhC bend contributes a large benefit to the overall transmission budget of the PhC-based link.

  • 19.
    Talneau, A.
    et al.
    CNRS, Lab Photon & Nanostruct.
    Aubin, G.
    CNRS, Lab Photon & Nanostruct.
    Uddhammar, Anna
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berrier, Audrey
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Mulot, Mikaël
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Highly dispersive photonic crystal-based coupled-cavity structures2006In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 20, p. 201106-1-201106-3Article in journal (Refereed)
    Abstract [en]

    We measured the wavelength dependence of the group velocity dispersion (GVD) for different photonic-crystal coupled-cavity structures through a phase analysis of the transmitted modulated signal. GVD values as large as 10(6)-10(7) times the dispersion of a standard single mode fiber are obtained when operating close to the band edge of the miniband, in agreement with the calculated group index. The GVD is found to be smaller for the structure based on more open cavities.

  • 20. Talneau, A.
    et al.
    LeGratiet, L.
    Gentner, J. L.
    Berrier, Audrey
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Mulot, Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Olivier, S.
    High external efficiency in a monomode full-photonic-crystal laser under continuous wave electrical injection2004In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 85, no 11, p. 1913-1915Article in journal (Refereed)
    Abstract [en]

    We demonstrate continuous wave with an external efficiency over 0.15 W/A and monomode operation of a full photonic crystal (PhC) laser. The optical confinement and a wavelength selectivity better than 25 dB are all ensured by a unique PhC. We take advantage of the feedback on the fundamental mode which exists within the photonic gap for some specific designs of the PhC guide. These designs are calculated using the plane wave expansion method.

  • 21. Talneau, A.
    et al.
    Mulot, Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Srinivasan, Anand
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Olivier, S.
    Agio, M.
    Kafesaki, M.
    Soukoulis, C. M.
    Modal behavior of single-line photonic crystal guiding structures on InP substrate2004In: Photonics and Nanostructures - Fundamentals and Applications, ISSN 1569-4410, Vol. 2, no 1, p. 1-10Article in journal (Refereed)
    Abstract [en]

    We have experimentally investigated the modal behaviour and the polarization dependence of the transmission through single-missing-row photonic crystal (PC) straight guides, bends and combiners, fabricated on InP substrate. A photonic crystal-based taper has been included to funnel light in these strongly confined structures. Two-dimensional finite-difference time-domain simulations have been performed and favorably compared with the measurements. It is found that the scattering process occurring at a bend/combiner transition plays a key role on the overall transmission.

  • 22. Wild, B.
    et al.
    Ferrini, R.
    Houdre, R.
    Mulot, Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Smith, C. J. M.
    Temperature tuning of the optical properties of planar photonic crystal microcavities2004In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 84, no 6, p. 846-848Article in journal (Refereed)
    Abstract [en]

    We report on the temperature tuning of the optical properties of photonic crystal (PhC) microcavities. Planar and one-dimensional cavities were made from two-dimensional PhCs etched in GaAs and InP based vertical waveguides. These systems were optically characterized by an internal light source technique. The samples were mounted on a Peltier stage in order to vary the temperature from 20 to 76degreesC. Linear dependence of the resonance wavelengths with respect to the temperature is observed with gradients dlambda/dT=0.09 and 0.1 nm/degreesC for GaAs and InP based cavities, respectively. These results are in agreement with theoretical calculations based on the thermal dependence of the refractive index of the PhC semiconductor component.

  • 23. Wild, B.
    et al.
    Ferrini, R.
    Houdré, R.
    Mulot, Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Smith, C. J. M.
    Temperature tuning of the optical properties of planar photonic crystal microcavities2004In: Proc SPIE Int Soc Opt Eng, 2004, p. 311-317Conference paper (Refereed)
    Abstract [en]

    We report on the temperature tuning of the optical properties of planar Photonic Crystal (PhC) microcavities. Studies were made on one and two dimensional PhCs that were etched in InP and GaAs vertical waveguides. Two dimensional (hexagonal) and one-dimensional (Fabry-Pérot) cavities were optically investigated by an internal light source technique. The samples were mounted on a Peltier-stage which allowed temperature variation from T = 20 °C up to T = 76 °C. A linear dependence of the resonance wavelengths with respect to temperature is observed. A gradient of dλ/dT = 0.09 nm/°C and 0.1 nm/°C for the GaAs and InP based cavities was observed, respectively. These results are in agreement with the theoretical calculations based on the thermal dependence of the refractive index of the PhC semiconductor component.

1 - 23 of 23
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf