Endre søk
Begrens søket
1 - 11 of 11
RefereraExporteraLink til resultatlisten
Permanent link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Treff pr side
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sortering
  • Standard (Relevans)
  • Forfatter A-Ø
  • Forfatter Ø-A
  • Tittel A-Ø
  • Tittel Ø-A
  • Type publikasjon A-Ø
  • Type publikasjon Ø-A
  • Eldste først
  • Nyeste først
  • Skapad (Eldste først)
  • Skapad (Nyeste først)
  • Senast uppdaterad (Eldste først)
  • Senast uppdaterad (Nyeste først)
  • Disputationsdatum (tidligste først)
  • Disputationsdatum (siste først)
  • Standard (Relevans)
  • Forfatter A-Ø
  • Forfatter Ø-A
  • Tittel A-Ø
  • Tittel Ø-A
  • Type publikasjon A-Ø
  • Type publikasjon Ø-A
  • Eldste først
  • Nyeste først
  • Skapad (Eldste først)
  • Skapad (Nyeste først)
  • Senast uppdaterad (Eldste først)
  • Senast uppdaterad (Nyeste først)
  • Disputationsdatum (tidligste først)
  • Disputationsdatum (siste først)
Merk
Maxantalet träffar du kan exportera från sökgränssnittet är 250. Vid större uttag använd dig av utsökningar.
  • 1.
    Colmenares, Juan
    et al.
    KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.
    Kargarrazi, Saleh
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Elahipanah, Hossein
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Nee, Hans-Peter
    KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    High Temperature Passive Components for Extreme EnvironmentsManuskript (preprint) (Annet vitenskapelig)
    Abstract [en]

    Silicon carbide is an excellent candidate when high temperature power electronics applications are considered. Integrated circuits as well as several power devices have been tested at high temperature. However, little attention has been paid to high temperature passive components that could enable the full SiC potential. In this work, the high temperature performances of different passive components have been studied. Integrated capacitors in bipolar SiC technology has been tested up to 300 °C and, two different designs of inductors have been tested up to 600 °C.

  • 2.
    Colmenares, Juan
    et al.
    KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.
    Kargarrazi, Saleh
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Elahipanah, Hossein
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Nee, Hans-Peter
    KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    High-Temperature Passive Components for Extreme Environments2016Inngår i: 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), IEEE conference proceedings, 2016, s. 271-274Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Silicon carbide is an excellent candidate when high temperature power electronics applications are considered. Integrated circuits as well as several power devices have been tested at high temperature. However, little attention has been paid to high temperature passive components that could enable the full SiC potential. In this work, the high-temperature performances of different passive components have been studied. Integrated capacitors in bipolar SiC technology have been tested up to 300 degrees C and, three different designs of inductors have been tested up to 700 degrees C.

  • 3.
    Elahipanah, Hossein
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik.
    Kargarrazi, Saleh
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik.
    Salemi, Arash
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik.
    Östling, Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik.
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik.
    500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits2017Inngår i: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    High-current 4H-SiC lateral BJTs for high-temperature monolithic integrated circuits are fabricated. The BJTs have three different sizes and the designs are optimized in terms of emitter finger width and length and the device layout to have higher current density (JC), lower on-resistance (RON), and more uniform current distribution. A maximum current gain (β) of >53 at significantly high current density was achieved for different sizes of SiC BJTs. The BJTs are measured from room temperature to 500 °C. An open-base breakdown voltage (VCEO) of >50 V is measured for the devices.

  • 4.
    Elahipanah, Hossein
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Kargarrazi, Saleh
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Salemi, Arash
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Östling, Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik.
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    500 degrees C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits2017Inngår i: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 38, nr 10, s. 1429-1432Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    High-current 4H-SiC lateral BJTs for hightemperature monolithic integrated circuits are fabricated. The BJTs have three different sizes and the designs are optimized in terms of emitter finger width and length and the device layout to have higher current density (J(C)), lower on-resistance (R-ON), and more uniform current distribution. A maximum current gain (beta) of >53 at significantly high current density was achieved for different sizes of SiC BJTs. The BJTs aremeasured fromroom temperature to 500 degrees C. An open-base breakdown voltage (V-CEO) of > 50 V is measured for the devices.

  • 5.
    Kargarrazi, Saleh
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Bipolar Silicon Carbide Integrated Circuits for High Temperature Power Applications2014Licentiatavhandling, monografi (Annet vitenskapelig)
    Abstract [en]

    Silicon Carbide (SiC) is suggested as a superior material for high temperature and high power electronic applications, thanks to its excellent properties. In this thesis, design and measurements of integrated circuits in bipolar 4H-SiC aiming for high temperature power applications are reported. On the low power side, a linear voltage regulator is demonstrated followed by introduction of a general-purpose opamp, which is employed to build other circuits such as a Schmitt trigger and a relaxation oscillator. On the high power side, a monolithic drive circuit for power BJTs is designed and tested in different loading conditions including resistive, capacitive and finally together with a commercial power BJT. The aforementioned circuits have been tested in the temperature range 25 - 500 °C, and are operational in the full range. The performance of each circuit is analyzed and directions for future work is suggested. The integrated circuits of this thesis set the reference for future advances in power integrated circuits in bipolar SiC.

  • 6.
    Kargarrazi, Saleh
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    High Temperature Bipolar SiC Power Integrated Circuits2017Doktoravhandling, monografi (Annet vitenskapelig)
    Abstract [en]

    In the recent decade, integrated electronics in wide bandgap semiconductor technologies such as Gallium Nitride (GaN) and Silicon Carbide (SiC) have been shown to be viable candidates in extreme environments (e.g high-temperature and high radiation). Such electronics have applications in down-hole drilling, automobile-, air- and space- industries. In this thesis, integrated circuits (ICs) in bipolar 4H-SiC for high-temperature power applications are explored. In particular, device modelling, circuit design, layout design, and measurements are discussed for a range of circuits including operational amplifiers, linear voltage regulators, drivers for power switches, and power converters with integrated control. The circuits were demonstrated and tested from 25 °C up to 500 °C. Circuit design in bipolar SiC technology involves challenges such as the fabrication process’ uncertainties and incomplete models of the devices. Furthermore, high temperature modelling of the integrated devices is needed for circuit design and simulation. From the circuit design viewpoint, techniques such as negative-feedback, temperature-insensitive biasing, buffering and Darlington stages, and amplifiers with fewer gain stages, were shown to be useful for high-temperature IC design in bipolar SiC. It is shown that the linear voltage regulator can be improved by using a tailored high-current lateral Darlington power device in the same fabrication process. This results in a high temperature high current power supply solution. Moreover, the drivers can be improved by design in order to provide higher voltage levels and peak currents for the power devices (bipolar and MOSFET based). In addition, a DC-DC converter with fully integrated hysteretic control is designed taking advantage of several sub-circuits such as operational amplifier, Schmitt trigger and driver for the power switch. This study is followed by preliminary experimental results for the converter and controller IC.

  • 7.
    Kargarrazi, Saleh
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Lanni, Luigia
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Rusu, Ana
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    A monolithic SiC drive circuit for SiC Power BJTs2015Inngår i: 2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), IEEE , 2015, s. 285-288Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Silicon Carbide (SiC) is an excellent candidate for high temperature electronics applications, thanks to its wide bandgap. SiC power BJTs are commercially available nowadays, and it is demanding to drive them efficiently. This paper reports on the design, layout specifics, and measurements results of a SiC drive integrated circuit (IC) designed for driving SiC power BJTs. The circuit has been tested in different loading conditions (resistive and capacitive), at switching frequencies up to 500kHz, and together with a commercial power BJT. The SiC drive IC is shown to have a robust operation over the entire temperature range from 25 degrees C to 500 degrees C.

  • 8.
    Kargarrazi, Saleh
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Lanni, Luigia
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Saggini, Stefano
    Rusu, Ana
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    500 degrees C Bipolar SiC Linear Voltage Regulator2015Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 62, nr 6, s. 1953-1957Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In this paper, we demonstrate a fully integrated linear voltage regulator in silicon carbide NPN bipolar transistor technology, operational from 25 degrees C up to 500 degrees C. For 15-mA load current, this regulator provides a stable output voltage with <2% variation in the temperature range 25 degrees C-500 degrees C. For both line and load regulations, degradation of 50% from 25 degrees C to 300 degrees C and improvement of 50% from 300 degrees C to 500 degrees C are observed. The transient response measurements of the regulator show robust behavior in the temperature range 25 degrees C-500 degrees C.

  • 9.
    Kargarrazi, Saleh
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Lanni, Luigia
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier2016Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 116, s. 33-37Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    This paper reports on the design and implementation of an integrated operational amplifier in bipolar SiC, and elaborates on its operation in positive-feedback configuration. The opamp is studied in different feedback setups: closed-loop compensated amplifier, comparator with hysteresis (Schmitt trigger), and as a relaxation oscillator. Measurement results suggest a stable closed-loop opamp with similar to 40 dB gain, a Schmitt trigger with constant threshold levels over a wide temperature range, and a relaxation oscillator tested up to 540 kHz. All the setups were tested from 25 degrees C up to 500 degrees C.

  • 10.
    Kargarrazi, Saleh
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Lanni, Luigia
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Design and characterization of 500°c schmitt trigger in 4H-SiC2015Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 821-823, s. 897-901Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Two versions of Schmitt trigger, an emitter-coupled and an operational amplifier (opamp)-based, are implemented in 4H-SiC bipolar technology and tested up to 500 °C. The former benefits the simplicity, smaller footprint, and fewer number of devices, whereas the latter provides better promise for high temperature applications, thanks to its more stable temperature characteristics. In addition, the measurements in the range 25 °C - 500 °C, shows that the opamp-based version provides negative and positive slew rates of 4.8 V/μs and 8.3 V/μs, ~8 and ~3 times higher than that of the emitter-coupled version, which are 1.7 V/μs and 1 V/μs.

  • 11.
    Zetterling, Carl-Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Hallén, Anders
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Hedayati, Raheleh
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Kargarrazi, Saleh
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Lanni, Luigia
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Malm, B. Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Mardani, S.
    Norström, H.
    Rusu, Ana
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Suvanam, Sethu Saveda
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Tian, Ye
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Östling, Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Bipolar integrated circuits in SiC for extreme environment operation2017Inngår i: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 32, nr 3, artikkel-id 034002Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.

1 - 11 of 11
RefereraExporteraLink til resultatlisten
Permanent link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf