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  • 1.
    Elshaari, Ali W.
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Buyukozer, Efe
    Swiss Fed Inst Technol, Dept Mech & Proc Engn, CH-8092 Zurich, Switzerland..
    Zadeh, Iman Esmaeil
    Delft Univ Technol, Opt Grp, NL-2628 CJ Delft, Netherlands..
    Lettner, Thomas
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Zhao, Peng
    Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol, Dept Elect Engn, Beijing, Peoples R China..
    Schöll, Eva
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Gyger, Samuel
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Reimer, Michael E.
    Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada.;Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada..
    Dalacu, Dan
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Poole, Philip J.
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Jöns, Klaus D.
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Zwiller, Val
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Strain-Tunable Quantum Integrated Photonics2018In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 18, no 12, p. 7969-7976Article in journal (Refereed)
    Abstract [en]

    Semiconductor quantum dots are crucial parts of the photonic quantum technology toolbox because they show excellent single-photon emission properties in addition to their potential as solid-state qubits. Recently, there has been an increasing effort to deterministically integrate single semiconductor quantum dots into complex photonic circuits. Despite rapid progress in the field, it remains challenging to manipulate the optical properties of waveguide-integrated quantum emitters in a deterministic, reversible, and nonintrusive manner. Here we demonstrate a new class of hybrid quantum photonic circuits combining III V semiconductors, silicon nitride, and piezoelectric crystals. Using a combination of bottom-up, top-down, and nanomanipulation techniques, we realize strain tuning of a selected, waveguide-integrated, quantum emitter and a planar integrated optical resonator. Our findings are an important step toward realizing reconfigurable quantum-integrated photonics, with full control over the quantum sources and the photonic circuit.

  • 2.
    Elshaari, Ali W.
    et al.
    Royal Inst Technol KTH, Dept Appl Phys, Quantum Nano Photon Grp, S-10691 Stockholm, Sweden..
    Buyukozer, Efe
    Swiss Fed Inst Technol, Dept Mech & Proc Engn, CH-8092 Zurich, Switzerland..
    Zadeh, Iman Esmaeil
    Delft Univ Technol, Opt Grp, NL-2628 CJ Delft, Netherlands..
    Lettner, Thomas
    Royal Inst Technol KTH, Dept Appl Phys, Quantum Nano Photon Grp, S-10691 Stockholm, Sweden..
    Zhao, Peng
    Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol, Dept Elect Engn, Beijing, Peoples R China..
    Schöll, Eva
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum and Biophotonics. Royal Inst Technol KTH, Dept Appl Phys, Quantum Nano Photon Grp, S-10691 Stockholm, Sweden..
    Gyger, Samuel
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum and Biophotonics. Royal Inst Technol KTH, Dept Appl Phys, Quantum Nano Photon Grp, S-10691 Stockholm, Sweden..
    Reimer, Michael E.
    Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada.;Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada..
    Dalacu, Dan
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Poole, Philip J.
    Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada..
    Jöns, Klaus D.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum and Biophotonics. Royal Inst Technol KTH, Dept Appl Phys, Quantum Nano Photon Grp, S-10691 Stockholm, Sweden..
    Zwiller, Val
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum and Biophotonics. Royal Inst Technol KTH, Dept Appl Phys, Quantum Nano Photon Grp, S-10691 Stockholm, Sweden..
    Strain-Tunable Quantum Integrated Photonics2018In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 18, no 12, p. 7969-7976Article in journal (Refereed)
    Abstract [en]

    Semiconductor quantum dots are crucial parts of the photonic quantum technology toolbox because they show excellent single-photon emission properties in addition to their potential as solid-state qubits. Recently, there has been an increasing effort to deterministically integrate single semiconductor quantum dots into complex photonic circuits. Despite rapid progress in the field, it remains challenging to manipulate the optical properties of waveguide-integrated quantum emitters in a deterministic, reversible, and nonintrusive manner. Here we demonstrate a new class of hybrid quantum photonic circuits combining III V semiconductors, silicon nitride, and piezoelectric crystals. Using a combination of bottom-up, top-down, and nanomanipulation techniques, we realize strain tuning of a selected, waveguide-integrated, quantum emitter and a planar integrated optical resonator. Our findings are an important step toward realizing reconfigurable quantum-integrated photonics, with full control over the quantum sources and the photonic circuit.

  • 3.
    Elshaari, Ali W.
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Esmaeil Zadeh, I.
    Fognini, A.
    Dalacu, D.
    Poole, P. J.
    Reimer, M. E.
    Zwiller, Val
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Jöns, Klaus D.
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Hybrid quantum photonic integrated circuits2018In: Proceedings - International Conference Laser Optics 2018, ICLO 2018, Institute of Electrical and Electronics Engineers (IEEE), 2018, article id 8435508Conference paper (Refereed)
    Abstract [en]

    Quantum photonic integrated circuits require a scalable approach to integrate bright on-demand sources of entangled photon-pairs in complex on-chip quantum photonic circuits. Currently, the most promising sources are based on III/V semiconductor quantum dots. However, complex photonic circuitry is mainly achieved in silicon photonics due to the tremendous technological challenges in circuit fabrication. We take the best of both worlds by developing a new hybrid on-chip nanofabrication approach, allowing to integrate III/V semiconductor nanowire quantum emitters into silicon-based photonics.

  • 4.
    Elshaari, Ali W.
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Zadeh, I. E.
    Fognini, A.
    Reimer, M. E.
    Dalacu, D.
    Poole, P. J.
    Zwiller, Val
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Jöns, Klaus
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Hybrid quantum photonics2017In: Optics InfoBase Conference Papers, Optical Society of America, 2017, Vol. Part F43Conference paper (Refereed)
    Abstract [en]

    We deterministically integrate nanowire quantum-emitters in SiN photonic circuits. We generate single-photons, suppress excitation-laser, and isolate specific transitions in the quantumemitter all on-chip with electrically-tunable filter. Finally, we demonstrate a novel Quantum- WDM channel on-chip.

  • 5.
    Elshaari, Ali W.
    et al.
    KTH, School of Electrical Engineering (EES).
    Zadeh, Iman Esmaeil
    Fognini, Andreas
    Reimer, Michael E.
    Dalacu, Dan
    Poole, Philip J.
    Zwiller, Val
    KTH, School of Engineering Sciences (SCI), Applied Physics. KTH, School of Electrical Engineering (EES).
    Jöns, Klaus D.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum Nano Photonics.
    On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits2017In: Nature Communications, ISSN 2041-1723, E-ISSN 2041-1723, Vol. 8, article id 379Article in journal (Refereed)
    Abstract [en]

    Quantum light plays a pivotal role in modern science and future photonic applications. Since the advent of integrated quantum nanophotonics different material platforms based on III-V nanostructures-, colour centers-, and nonlinear waveguides as on-chip light sources have been investigated. Each platform has unique advantages and limitations; however, all implementations face major challenges with filtering of individual quantum states, scalable integration, deterministic multiplexing of selected quantum emitters, and on-chip excitation suppression. Here we overcome all of these challenges with a hybrid and scalable approach, where single III-V quantum emitters are positioned and deterministically integrated in a complementary metal-oxide-semiconductor-compatible photonic circuit. We demonstrate reconfigurable on-chip single-photon filtering and wavelength division multiplexing with a foot print one million times smaller than similar table-top approaches, while offering excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm. Our work marks an important step to harvest quantum optical technologies' full potential.

  • 6.
    Elshaari, Ali W.
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum Electronics and Quantum Optics, QEO. Delft Univ Technol, Kavli Inst Nanosci, Netherlands.
    Zadeh, Iman Esmaeil
    Jöns, Klaus D.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum Electronics and Quantum Optics, QEO. Delft Univ Technol, Kavli Inst Nanosci, Netherlands.
    Zwiller, Val
    KTH, School of Engineering Sciences (SCI), Applied Physics, Quantum Electronics and Quantum Optics, QEO.
    Thermo-Optic Characterization of Silicon Nitride Resonators for Cryogenic Photonic Circuits2016In: IEEE Photonics Journal, ISSN 1097-5764, E-ISSN 1943-0655, Vol. 8, no 3, article id 2701009Article in journal (Refereed)
    Abstract [en]

    In this paper, we characterize the Thermo-optic properties of silicon nitride ring resonators between 18 and 300 K. The Thermo-optic coefficients of the silicon nitride core and the oxide cladding are measured by studying the temperature dependence of the resonance wavelengths. The resonant modes show low temperature dependence at cryogenic temperatures and higher dependence as the temperature increases. We find the Thermo-optic coefficients of PECVD silicon nitride and silicon oxide to be 2.51 +/- 0.08 E-5 K-1 and 0.96 +/- 0.09 E-5 K-1 at room temperature while decreasing by an order of magnitude when cooling to 18 K. To show the effect of variations in the thermo-optic coefficients on device performance, we study the tuning of a fully integrated electrically tunable filter as a function of voltage for different temperatures. The presented results provide new practical guidelines in designing photonic circuits for studying low-temperature optical phenomena.

  • 7. Zadeh, Iman Esmaeil
    et al.
    Elshaari, Ali W.
    KTH, School of Electrical Engineering (EES). Delft Univ Technol, Netherlands.
    Jöns, Klaus D.
    KTH, School of Electrical Engineering (EES). Delft Univ Technol, Netherlands.
    Fognini, Andreas
    Dalacu, Dan
    Poole, Philip J.
    Reimer, Michael E.
    Zwiller, Val
    KTH, School of Electrical Engineering (EES). Delft Univ Technol, Netherlands.
    Deterministic Integration of Single Photon Sources in Silicon Based Photonic Circuits2016In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 16, no 4, p. 2289-2294Article in journal (Refereed)
    Abstract [en]

    A major step toward fully integrated quantum optics is the deterministic incorporation of high quality single photon sources in on-chip optical circuits. We show a novel hybrid approach in which preselected III-V single quantum dots in nanowires are transferred and integrated in silicon based photonic circuits. The quantum emitters maintain their high optical quality after integration as verified by measuring a low multiphoton probability of 0.07 +/- 0.07 and emission line width as narrow as 3.45 +/- 0.48 GHz. Our approach allows for optimum alignment of the quantum dot light emission to the fundamental waveguide mode resulting in very high coupling efficiencies. We estimate a coupling efficiency of 24.3 +/- 1.7% from the studied single-photon source to the photonic channel and further show by finite-difference time-domain simulations that for an optimized choice of material and design the efficiency can exceed 90%.

1 - 7 of 7
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  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
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  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
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  • Other locale
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  • text
  • asciidoc
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