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  • 1.
    Akram, Nadeem
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Kjebon, Olle
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Chacinski, Marek
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP. KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Schatz, Richard
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP. KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Berggren, Jesper
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Berrier, Audrey
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
    Experimental characterization of high-speed 1.55 mu m buried heterostructure InGaAsP/InGaAlAs quantum-well lasers2009Ingår i: Journal of the Optical Society of America. B, Optical physics, ISSN 0740-3224, E-ISSN 1520-8540, Vol. 26, nr 2, s. 318-327Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Detailed experimental characterization is performed for 1550 nm semi-insulating regrown buried heterostructure Fabry-Perot (FP) lasers having 20 InGaAsP/InGaAlAs strain-balanced quantum wells (QWs) in the active region. Light-current-voltage performance, electrical impedance, small-signal response below and above threshold, amplified spontaneous emission spectrum below threshold and relative intensity noise spectrum are measured. Different laser parameters such as external differential quantum efficiency eta(d), background optical loss alpha(i), K-factor, D-factor, characteristic temperature T-0, differential gain dg/dn, gain-compression factor epsilon, carrier density versus current, differential carrier lifetime tau(d), optical gain spectrum below threshold, and chirp parameter alpha are extracted from these measurements. The FP lasers exhibited a high T-0 (78-86.5 degrees C) and very high-resonance frequency (23.7 GHz). The results indicate that appropriately designed lasers having a large number of InGaAsP well/InGaAlAs barrier QWs with shallow valence-band discontinuity can be useful for un-cooled high-speed direct-modulated laser applications.

  • 2.
    Akram, Nadeem
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Kjebon, Olle
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Chacinski, Marek
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Schatz, Richard
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Berggren, Jesper
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Berrier, Audrey
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    High-Speed Performance of 1.55 µm Buried Hetero-Structure Lasers with 20 InGaAsP/InGaAlAs Quantum-Wells2006Ingår i: 2006 European Conference on Optical Communications Proceedings, ECOC 2006, IEEE , 2006, s. 1-2Konferensbidrag (Refereegranskat)
    Abstract [en]

    1550 nm re-grown FP lasers having 20 InGaAsP/InGaAlAs strain-balanced QWs exhibit low threshold current density, high T0 (78.0 #x000B0;C) and high resonance frequency (24 GHz) indicating that a large number of shallow barrier QWs are attractive for un-cooled high-speed direct-modulation applications.

  • 3.
    Akram, Nadeem
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Kjebon, Olle
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Marcinkevičius, Saulius
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Schatz, Richard
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Berggren, Jesper
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    The effect of barrier composition on the vertical carrier transport and lasing properties of 1.55-mu m multiple quantum-well structures2006Ingår i: IEEE Journal of Quantum Electronics, ISSN 0018-9197, E-ISSN 1558-1713, Vol. 42, nr 7, s. 713-714Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    In this paper, the effect of barrier bandgap and composition on the optical performance of 1.55-mu m InGaAsP/In-GaAsP and InGaAsP/InGaAlAs multiple quantum-well structures and Fabry-Perot lasers is evaluated experimentally. Direct vertical carrier transport measurements were performed through strain-compensated multiple quantum-well (MQW) test structures using femto-second laser pulse excitation and time-resolved photoluminescence up-conversion method. MQW test structures were grown with different barrier composition (InGaAsP and InGaAlAs) and barrier bandgap (varied from lambda(g) = 1440 to 1260 nm) having different conduction band Delta E-c and valence band discontinuity Delta E-v, while keeping the same InGaAsP well composition for all the structures. The ambipolar carrier transport was found to be faster in the structures with lower valence band discontinuity Delta E-v. Regrown semi-insulating buried heterostructure Fabry-Perot (SIBH-FP) lasers were fabricated from similar QWs and their static light-current-voltage characteristics (including optical gain and chirp spectra below threshold) and thermal characteristics were measured. Lasers with InGaAlAs barrier showed improved high-temperature operation, higher optical gain, higher differential gain, and lower chirp, making them suitable candidates for high-bandwidth directly modulated uncooled laser applications.

  • 4. Baek, J. H.
    et al.
    Soares, F. M.
    Seo, S. W.
    Jiang, W.
    Fontaine, N. K.
    Broeke, R. G.
    Cao, J.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik (Stängd 20120101), Halvledarmaterial, HMA (Stängd 20120101).
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik (Stängd 20120101), Halvledarmaterial, HMA (Stängd 20120101).
    Yoo, S. J. B.
    10-GHz and 20-GHz channel spacing high-resolution AWGs on InP2009Ingår i: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 21, nr 5, s. 298-300Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    This letter reports on 10-GHz and 20-GHz channel-spacing arrayed waveguide gratings (AWGs) based on InP technology. The dimensions of the AWGs are 6.8 × 8.2 mm2 and 5.0 × 6.0 mm2, respectively, and the devices show crosstalk levels of 12 dB for the 10-GHz and 17 dB for the 20-GHz AWG without any compensation for the phase errors in the arrayed waveguides. The root-mean-square phase errors for the center arrayed waveguides were characterized by using an optical vector network analyzer, and are 18° for the 10-GHz AWG and 28° for the 10-GHz AWG.

  • 5. Cao, J.
    et al.
    Broeke, R. G.
    Ji, C.
    Du, Y.
    Chubun, N.
    Bjeletich, P.
    Yoo, S. J. B.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Stephan, P. L.
    A monolithic ultra-compact inp o-cdma encoder with: Planarization by hvpe regrowth2006Ingår i: OFC/NFOEC, Optical Society of America, 2006Konferensbidrag (Refereegranskat)
    Abstract [en]

    We report a monolithic, ultra-compact optical-CDMA encoder/decoder photonic chip in InP with surface planarization by low-pressure Hydride-Vapor-Phase-Epitaxy regrowth. The chip consists of an AWG pair and eight electro-optic phase shifters and demonstrated excellent encoding operation.

  • 6. Cao, J.
    et al.
    Broeke, R. G.
    Ji, C.
    Du, Y.
    Chubun, N.
    Bjeletich, P.
    Yoo, S. J. B.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Stephan, P. L.
    A monolithic ultra-compact inp o-cdma encoder with: Planarization by hvpe regrowth2005Ingår i: Optics InfoBase Conference Papers, Optics Info Base, Optical Society of America, 2005Konferensbidrag (Refereegranskat)
    Abstract [en]

    We report a monolithic, ultra-compact optical-CDMA encoder/decoder photonic chip in InP with surface planarization by low-pressure Hydride-Vapor-Phase-Epitaxy regrowth. The chip consists of an AWG pair and eight electro-optic phase shifters and demonstrated excellent encoding operation.

  • 7.
    Cao, Jing
    et al.
    Department of Electrical and Computer Engineering, University of California.
    Broeke, R. G.
    Department of Electrical and Computer Engineering, University of California.
    Fontaine, N. K.
    Department of Electrical and Computer Engineering, University of California.
    Ji, C.
    Department of Electrical and Computer Engineering, University of California.
    Du, Y.
    Department of Electrical and Computer Engineering, University of California.
    Chubun, N.
    Department of Electrical and Computer Engineering, University of California.
    Aihara, K.
    Department of Electrical and Computer Engineering, University of California.
    Pham, Anh-Wu
    Department of Electrical and Computer Engineering, University of California.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Yoo, S. J. Ben
    Department of Electrical and Computer Engineering, University of California.
    Demonstration of Spectral Phase O-CDMA Encoding and Decoding in Monolithically Integrated Arrayed-Waveguide-Grating-Based Encoder2006Ingår i: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 18, nr 21-24, s. 2602-2604Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We report on successful spectral phase encoding and decoding operation in a pair of monolithically integrated InP encoder chips, each consisting of an arrayed waveguide grating (AWG) pair and an eight-channel electrooptic phase shifter array. The monolithic fabrication process includes anisotropic reactive ion etching and planarizing hydride-vapor-phase-epitaxy lateral regrowth to realize buried hetero-waveguide structures in AWGs and phase shifters. Electrooptical modulation in the phase shifter arrays in the encoder chip achieved Walsh-code-based optical code-division multiple access (O-CDMA) encoding and decoding. The matched-code encoding-decoding operation resulted in error-free performance in the presence of an interferer, indicating good potential for O-CDMA network applications.

  • 8. Cheung, S. T. S.
    et al.
    Soares, F. M.
    Baek, J. H.
    Guan, B.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik (Stängd 20120101), Halvledarmaterial, HMA (Stängd 20120101).
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik (Stängd 20120101), Halvledarmaterial, HMA (Stängd 20120101).
    Yoo, S. J. B.
    Monolithically integrated 10-GHz ring colliding pulse mode-locked laser for on-chip coherent communications2012Ingår i: 2012 Conference on Lasers and Electro-Optics, CLEO 2012, 2012, s. 6326206-Konferensbidrag (Refereegranskat)
    Abstract [en]

    We report a 10-GHz ring resonator colliding pulse mode-locked (CPM) laser with tunable couplers for InP-based monolithically integrated optical coherent communication system applications. Optimization included adjusting the saturable absorber reverse bias, driving RF-frequency, and amplifier gain current. Hybrid mode-locking (HML) resulted in a minimal pulse width of 10.1ps for 6 nm spectral width.

  • 9. Estephan, Elias
    et al.
    Saab, Marie-belle
    Larroque, Christian
    Martin, Marta
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Gergely, Csilla
    Peptides for functionalization of InP semiconductors2009Ingår i: Journal of Colloid and Interface Science, ISSN 0021-9797, E-ISSN 1095-7103, Vol. 337, nr 2, s. 358-363Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The challenge is to achieve high specificity in molecular sensing by proper functionalization of micro/nano-structured semiconductors by peptides that reveal specific recognition for these structures. Here we report on surface modification of the InP semiconductors by adhesion peptides produced by the phage display technique. An M13 bacteriophage library has been used to screen 10(10) different peptides against the InP(0 0 1) and the InP(1 1 1) surfaces to finally isolate specific peptides for each orientation of the InP. MALDI-TOF/TOF mass spectrometry has been employed to study real affinity of the peptide towards the InP surfaces. The peptides serve for controlled placement of biotin onto InP to bind then streptavidin. Our Atomic Force Microscopy study revealed a total surface coverage of molecules when the InP surface was functionalized by its specific biotinylated peptide (YAIKGPSHFRPS). Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide onto a micro-patterned InP surface. Use of substrate specific peptides could present an alternative solution for the problems encountered in the actually existing sensing methods and molecular self-assembly due to the unwanted unspecific interactions.

  • 10. Fontaine, N. K.
    et al.
    Baek, J. -H
    Ji, C.
    Broeke, R. G.
    Zhou, X.
    Seo, S. -W
    Soares, F. M.
    Shearn, M.
    Scherer, A.
    Olsson, Fredrik E.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Liu, K. Y.
    Tsang, W. T.
    Yoo, S. J. B.
    Monolithically integratable colliding pulse modelocked laser source for O-CDMA photonic chip development2008Konferensbidrag (Refereegranskat)
    Abstract [en]

    We demonstrate modelocking of a colliding-pulse mode-locked laser formed by 3-μm-deep etched-mirrors on an InP platform for integration with passive waveguide components. Timing jitter of 243 fs and pulse width of 10 ps were measured.

  • 11. Fontaine, N. K.
    et al.
    Wei, J.
    Soares, F. M.
    Broeke, R. G.
    Seo, S. -W
    Baek, J. -H
    Cao, J.
    Okamoto, K.
    Yoo, S. J. B.
    Olsson, Fredrik
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Determination of 20 GHz InP AWG phase errors by measurement of AWG pulse train2007Ingår i: 2007 IEEE LEOS Annual Meeting Conference Proceedings, IEEE , 2007, s. 725-726Konferensbidrag (Refereegranskat)
    Abstract [en]

    The phase errors of a 20 GHz AWG fabricated on InP are determined by measuring the intensity and phase of the pulse train produced by the transmission of a short pulse through an AWG.

  • 12.
    Jaskorzynska, Bozena
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Active Si-based photonics via heterogeneous integration2008Ingår i: ICTON 2008: PROCEEDINGS OF 2008 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2 / [ed] Marciniak, M, NEW YORK: IEEE , 2008, s. 30-33Konferensbidrag (Refereegranskat)
    Abstract [en]

    We review major breakthroughs in realizing silicon-based active components by heterogeneous integration with III-V semiconductors, or nonlinear organic materials. In more detail we describe examples of our concepts and technological approach addressing this goal. This includes designs for widely tunable filters and new routes for heteroepitaxy and selective area growth of InP on silicon.

  • 13. Jiang, W.
    et al.
    Fontaine, K.
    Soares, F. M.
    Baek, J. H.
    Okamoto, K.
    Yoo, J. B.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Halvledarmaterial, HMA.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Halvledarmaterial, HMA.
    Dynamic phase-error compensation for high-resolution InP arrayed-waveguide grating using electro-optic effect2008Ingår i: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2008, s. 53-54Konferensbidrag (Refereegranskat)
    Abstract [en]

    We demonstrate for the first time the phase-error compensation for a 20-GHz-spacing InP AWG with electrooptic phase shifters placed on 42 arrayed waveguides. The experiment results show successful phase control and 6-dB reduction of crosstalk.

  • 14. Jiang, W.
    et al.
    Okamoto, K.
    Soares, F. M.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Yoo, S. J. B.
    5 GHz channel spacing InP-based 32-channel Arrayed-Waveguide Grating2009Ingår i: OFC: 2009 Conference on Optical Fiber Communication, IEEE , 2009, s. 2660-2662Konferensbidrag (Refereegranskat)
    Abstract [en]

    We realize a 32-channel InP-based Arrayed-Waveguide Grating (AWG) with a 5-GHz channel spacing. The AWG shows approximately 14 dB excess-loss, 9 dB crosstalk, and 21 × 22 mm2 dimensions.

  • 15. Jiang, W.
    et al.
    Soares, F. M.
    Seo, S. W.
    Baek, J. H.
    Fontaine, N. K.
    Broeke, R. G.
    Cao, J.
    Yan, J.
    Okamoto, K.
    Olsson, Fredrik E.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Pham, A.
    Yoo, S. J. B.
    A monolithic inp-based photonic integrated circuit for optical arbitrary waveform generation2008Konferensbidrag (Refereegranskat)
    Abstract [en]

    We demonstrate a compact monolithically-integrated InP optical arbitrary waveform generator, consisting of an arrayed waveguide grating pair with 10 GHz channel spacing, 10 high-speed optical amplitude modulators, and 10 high-speed optical phase modulators.

  • 16.
    Junesand, Carl
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Metaferia, Wondwosen
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Avella, M.
    Jimenez, J.
    Pozina, G.
    Hultman, L.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Heteroepitaxial Growth of Indium Phosphide from Nano-openings Made by Masking on a Si(001) Wafer2010Ingår i: 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2010Konferensbidrag (Refereegranskat)
    Abstract [en]

    We investigate nano-eptiaxial lateral overgrowth (NELOG) of InP from the nano-sized openings on a seed layer on the silicon wafer, by Hydride Vapor Phase Epitaxy (HVPE). The grown layers were analyzed by cathodoluminescence (CL) in situ a scanning electron microscope (SEM) and transmission electron microscopy (TEM). The results from InP: S growth shows that the boundary plane of the grown layer has a major impact on the luminescence, indicating preferential orientation-dependent doping. Moreover, although there is clear evidence that most of the threading dislocations originating in the InP seed layer/Si interface are blocked by the mask, it appears that new dislocations are generated. Some of these dislocations are bounding planar defects such as stacking faults, possibly generated by unevenness in the mask. Finally, patterns where coalescence takes place at higher thickness seem to result in a rougher surface.

  • 17.
    Junesand, Carl
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Metaferia, Wondwosen
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Avella, M.
    Jimenez, J.
    Pozina, G.
    Hultman, L.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Heteroepitaxial Indium Phosphide on Silicon2010Ingår i: SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS II, 2010, Vol. 7719Konferensbidrag (Övrigt vetenskapligt)
    Abstract [en]

    There is an intense interest on integration of III-V materials on silicon and silicon-on-insulator for realisation of optical interconnects, optical networking, imaging and disposable photonics for medical applications. Advances in photonic materials, structures and technologies are the main ingredients of this pursuit. We investigate nano epitaxial lateral overgrowth (NELOG) of InP material from the nano openings on a seed layer on the silicon wafer, by hydride vapour phase epitaxy (HVPE). The grown layers were analysed by cathodoluminescence (CL) in situ a scanning electron microscope, time-resolved photoluminescence (TR-PL), and atomic force microscope (AFM). The quality of the layers depends on the growth parameters such as the V/III ratio, growth temperature, and layer thickness. CL measurements reveal that the dislocation density can be as low as 2 - 3.10(7) cm(-2) for a layer thickness of similar to 6 mu m. For comparison, the seed layer had a dislocation density of similar to 1.10(9) cm(-2). Since the dislocation density estimated on theoretical grounds from TRPL measurements is of the same order of magnitude both for NELOG InP on Si and on InP substrate, the dislocation generation appears to be process related or coalescence related. Pertinent issues for improving the quality of the grown InP on silicon are avoiding damage in the openings due to plasma etching, pattern design to facilitate coalescence with minimum defects and choice of mask material compatible with InP to reduce thermal mismatch.

  • 18.
    Junesand, Carl
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Xiang, Yu
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Gau, Ming-Horng
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Heterogeneous integration of indium phosphide on silicon by nano-epitaxial lateral overgrowth2009Ingår i: 2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 2009, s. 59-62Konferensbidrag (Refereegranskat)
    Abstract [en]

    InP on Si is grown by nano-epitaxial lateral overgrowth (nano-ELOG) on patterns consisting of net-type openings under different growth conditions. Analysis shows that net-type patterns yield large lateral growth rate and good optical quality. Different growth conditions have a substantial impact on growth rate and some effect on surface morphology, as well as on the optical quality. Optical quality is deemed to be affected partly by the amount of dislocations arising from the difference in thermal expansion coefficient between the mask and the InP layer, and partly by the layer thickness and surface morphology.

  • 19.
    Junesand, Carl
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Xiang, Yu
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Gau, Ming-Horng
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Surface morphology of indium phosphide grown on silicon by nano-epitaxial lateral overgrowth2009Ingår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 6, nr 12, s. 2785-2788Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    InP is grown on Si by nano-epitaxial lateral overgrowth (NELOG or nano-ELOG) on patterns consisting of net-type openings under different growth conditions. Surface morphology is characterized with AFM and profilometer and optical quality assessed by Micro Photoluminescence measurements (mu-PL). Results show that growth conditions affect both morphology and optical quality, with thicker layers generally corresponding to better surface morphology. Lower growth temperature seems to improve surface morphology irrespective of thickness, and ELOG layers exhibit significantly better morphology than the planar layer.

  • 20.
    Lankinen, A.
    et al.
    Optoelectronics Laboratory, Helsinki University of Technology.
    Tuomi, T.
    Optoelectronics Laboratory, Helsinki University of Technology.
    Karilahti, M.
    Optoelectronics Laboratory, Helsinki University of Technology.
    Zytkiewicz, Z. R.
    Institute of Physics, Polish Academy of Sciences.
    Domagala, J. Z.
    Institute of Physics, Polish Academy of Sciences.
    McNally, P. J.
    Research Institute for Networks and Communications Engineering, Dublin City University.
    Sun, Yan-Ting
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Crystal Defects and Strain of Epitaxial InP Layers Laterally Overgrown on Si2006Ingår i: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 6, nr 5, s. 1096-1100Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Defects in epitaxial laterally overgrown (ELO) InP layers are examined by high-resolution X-ray diffraction and synchrotron X-ray back-reflection and transmission topography. X-ray diffraction maps produce information about the overall crystal quality of the epitaxial layers in the InP ELO sample. The topographs show small angle boundaries, and the associated dislocations are located at the boundaries between the crystallites; allowing for their relative tilt, the maximum value for this is 0.06 degrees. No defects inside the crystallites can be seen in the topographs, except for a small bending of 0.04 degrees at most, of the ELO lattice planes. The section topographs show deformed X-ray interference fringes resulting from the large strain of the silicon lattice below the seeding areas.

  • 21.
    Lourdudoss, Sebastian
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Electrumlaboratoriet, ELAB.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Electrumlaboratoriet, ELAB.
    Barrios, C. A.
    Hakkarainen, Teppo
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Electrumlaboratoriet, ELAB.
    Berrier, Audrey
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Anand, Srinivasan
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Electrumlaboratoriet, ELAB. KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Aubert, Amandine
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Electrumlaboratoriet, ELAB.
    Berggren, Jesper
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Electrumlaboratoriet, ELAB. KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Broeke, R. G.
    Cao, J.
    Chubun, N.
    Seo, S. -W
    Baek, J. -H
    Aihara, K.
    Pharn, Anh-Vu
    Ben Yoo, S. J.
    Avella, M.
    Jimenez, J.
    Heteroepitaxy and selective epitaxy for discrete and integrated devices2006Ingår i: 2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES, NEW YORK: IEEE , 2006, s. 309-311Konferensbidrag (Refereegranskat)
    Abstract [en]

    We present first results on heteroepitaxy of InP on silicon on insulator (SOI). We also demonstrate InP nanopillar fabrication by means of selective epitaxy. Selective epitaxy is also exploited to fabricate advanced photonic integrated devices for Optical Code Division Multiplex Access (OCDMA) networking applications.

  • 22.
    Lourdudoss, Sebastian
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Sun, Yanting
    Novel routes in heteroepitaxy and selective area growth for nanophotonics2008Ingår i: Quantum Sensing and Nanophotonic Devices V / [ed] Sudharsanan, R; Jelen, C, 2008, Vol. 6900, s. H9000-H9000Konferensbidrag (Refereegranskat)
    Abstract [en]

    Integration of active photonic components on silicon and silicon on insulator (SOI) would be versatile for nanophotonics since CMOS compatible processes are available for fabricating passive devices on Si/SOI. Selective area growth of III-V semiconductors is also attractive for realising periodic structures for nanophotonics. Here we report on the recent results of high quality InP on Si and InP on SOI achieved by means of nanopatterning. MQW structures have been realised on InP/Si and InP/SOI. We would elaborate routes for monolithic integration of active and passive devices for nanophotonics.

  • 23.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration2008Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
    Abstract [en]

    A densely and monolithically integrated photonic chip on indium phosphide is greatly in need for data transmission but the present day’s level of integration in InP is very low. Silicon enjoys a unique position among all the semiconductors in its level of integration. But it suffers from its slow signal transmission between the circuit boards and between the chips as it uses conventional electronic wire connections. This being the bottle-neck that hinders enhanced transmission speed, optical-interconnects in silicon have been the dream for several years. Suffering from its inherent deficient optical properties, silicon is not supposed to offer this feasibility in the near future. Hence, integration of direct bandgap materials, such as indium phosphide on silicon, is one of the viable alternatives. This thesis addresses these two issues, namely monolithic integration on indium phosphide and monolithic integration of indium phosphide on silicon. To this end, we use two techniques, namely selective epitaxy and heteroepitaxy by employing hydride vapor phase epitaxy method.

    The first part deals with the exploitation of selective epitaxy for fabricating a discrete and an integrated chip based on InP. The former is a multi-quantum well buried heterostructure laser emitting at 1.55 µm that makes use of AlGaInAs and InGaAsP as the barrier and well, respectively. We demonstrate that even though it contains Al in the active region, semi-insulating InP:Fe can be regrown. The lasers demonstrate threshold as low as 115A/cm2/quantum well, an external quantum efficiency of 45% and a characteristic temperature of 78 K, all at 20 oC. Concerning the integrated device, we demonstrate complex and densely packed buried arrayed waveguide (AWG) structures found in advanced systems-on-the-chip for optical code-division multiple-access (O-CDMA). We present a case of an error-free 10 Gb/s encoding and decoding operation from an eight-channel AWGs with 180 GHz channel spacing. Selective epitaxial growth aspects specific to these complicated structures are also described and guidance on design implementation of these AWGs is given. Mass transport studies on these AWGs are also presented.

    The second part deals with various studies on and relevant to epitaxial lateral overgrowth (ELOG) of high quality InP on silicon. (i) ELOG often encounters cases where most part of the surface is covered by mask. From the modeling on large mask area effects, their impact on the transport and kinetic properties has been established. (ii) It is known that ELOG causes strain in the materials. From synchrotron X-ray measurements, strain is shown to have large effect on the mask edges and the underlying substrate. (iii) The combination of strain and the influence of image forces when reducing the opening dimensions in ELOG has been modeled. It is found to be very beneficial to reduce openings down to ~100 nm where effective filtering of dislocations is predicted to take place even in vicinity of the openings. We call it nano-ELOG. (iv) By combining the modeling results of nano-ELOG and of a pre-study of ELOG on pure InP, a novel net pattern design is invented and experimented for nano-ELOG of InP on Si. PL measurements together with transmission electron microscopy observations indicate beneficial effects of small size openings (200 nm) compared to 1000 nm openings. (v) ELOG of InP on silicon-on-insulators together with a multi-quantum well structure grown on it has been demonstrated for the first time. This is particularly interesting for integrating silicon/silicon dioxide waveguides with InP.

  • 24.
    Olsson, Fredrik
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Aubert, Amandine
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Avella, M.
    Jiménez, J.
    Barrios, C. A.
    Berggren, Jesper
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Heteroepitaxy of InP on Silicon-on-Insulator for Optoelectronic Integration2007Ingår i: ECS Transactions, ISSN 1938-5862, Vol. 3, nr 39, s. 23-29Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Epitaxial lateral overgrowth of InP was performed on patterned silicon-on-insulator (SOI) and compared with that on Si substrates in a low pressure hydride vapor phase epitaxy system. The InP was characterized by cathodoluminescence. No red shift of peak wavelength was detected for InP/SOI indicating a negligible thermal strain. Additional low energy peaks were found in some regions with a granular structure on the SOI template. A subsequent growth of an InGaAsP/InP MQW (multi quantum well) structure (λ∼1.5 μm) was grown on the SOI template and on a planar InP reference sample by metal-organic phase epitaxy. The MQW was characterized by room temperature photoluminescence. A red shift of 35 nm with respect to the reference sample was attributed to the selective-area effect causing thicker wells and/or an increased indium content. Although the PL intensity was weaker than that obtained for the reference, the FWHMs were comparable.

  • 25.
    Olsson, Fredrik
    et al.
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Mion, Gaël
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Sun, YanTing
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Sundgren, Petrus
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Baskar, Krishnan
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Armani, N.
    Hammar, Mattias
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Selective area growth of GaInNAs/GaAs by MOVPE2004Ingår i: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 23, nr 04-mar, s. 347-351Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Selective area growth (SAG) of GaInNAs/GaAs systems has been studied by metalorganic vapor-phase epitaxy (MOVPE) for the first time. This also includes a comparative study of SAG of the GaInAs/GaAs. The patterns consisted of various filling factors (F). The band gap changes and the growth morphology have been investigated. A red-shift observed for SAG GaInAs is similar to100 nm with respect to the planar GaInAs which can be attributed to both In enrichment and quantum well (QW) thickness enhancement. Selectively grown GaInNAs structures exhibit a maximum wavelength of 1.3 mum, corresponding to a red-shift of similar to80 nm with respect to the planar GaInNAs. Atomic force microscopy (AFM) scans reveal a three-dimensional growth behaviour for SAG GaInNAs unlike SAG GaInAs. This can be related to a certain amount of phase separation or strain that are often the signatures of N incorporation. The cathodoluminescence (CL) intensities (spectral line width) for SAG GaInNAs are larger (smaller) than those for SAG GaInAs at low F's but smaller (larger) at high F's. This indicates that at low F's, GaInAs has degraded due to very high strain but certain amount of strain compensation occurs in GaInNAs.

  • 26.
    Olsson, Fredrik
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Xie, Mengyao
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Gerard, F.
    Instituto de Microelectronica de Madrid (CSIC).
    Alija, A. R.
    Instituto de Microelectronica de Madrid (CSIC).
    Prieto, I.
    Instituto de Microelectronica de Madrid (CSIC).
    Postigo, P. A.
    Instituto de Microelectronica de Madrid (CSIC).
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Epitaxial lateral overgrowth of InP in micro line and submicro mesh openings2007Ingår i: 2007 International Conference on Indium Phosphide and Related Materials, 2007, s. 311-314Konferensbidrag (Refereegranskat)
    Abstract [en]

    Towards achieving a large area of InP on silicon, a study of ELOG of InP on InP has been undertaken on lines with different orientations and with openings that are 100 mu m long and 10 gm wide. This knowledge has been transposed on sub-micro mesh structures. By this method we have obtained 2 gm thick InP on a mesh patterned InP. The layer exhibits room temperature photoluminescence (PL) with a full width half maximum of 24 nm. We propose that this intensity can be increased if nano-sized openings are used.

  • 27.
    Olsson, Fredrik
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Xie, Mengyao
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Prieto, I.
    Instituto de Microelectrónica de Madrid, Centro Nacional de Microelectrónica (IMM-CNM-CSIC).
    Postigo, P. A.
    Instituto de Microelectrónica de Madrid, Centro Nacional de Microelectrónica (IMM-CNM-CSIC).
    Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experemintal indication for defect filtering throughout the grown layer2008Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 104, nr 9, s. 093112-1-093112-6Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We present a model for the filtration of dislocations inside the seed window in epitaxial lateral overgrowth (ELO). We found that, when the additive effects of image and gliding forces exceed the defect line tension force, filtering can occur even in the openings. The model is applied to ELO of InP on Si where the opening size and the thermal stress arising due to the mask and the grown material are taken into account and analyzed. Further, we have also designed the mask patterns in net structures, where the tilting angles of the openings in the nets are chosen in order to take advantage of the filtering in the openings more effectively, and to minimize new defects due to coalescence in the ELO. Photoluminescence intensities of ELO InP on Si and on InP are compared and found to be in qualitative agreement with the model.

  • 28.
    Olsson, Fredrik
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Xie, Mengyao
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Marcinkevicius, Saulius
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Optik.
    Gerard, F.
    Alija, A. R.
    Prieto, I.
    Postigo, P. A.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
    Time resolved photoluminescence and transmission electron microscopy studies on nano InP grown on silicon by nano epitaxial lateral overgrowthManuskript (Övrigt vetenskapligt)
  • 29.
    Olsson, Fredrik
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Zhu, Tiankai
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Mion, Gaël
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Large mask area effects in selective area growth2006Ingår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 289, nr 1, s. 24-30Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    In this paper we analyze for the first time selective area growth (SAG) of GaAs by MOVPE on dark field patterns, where the different masking features are dense and at the same time the openings are surrounded by very large mask area (larger than the openings) in all directions. The growth efficiency as a function of filling factors is analyzed using one- and two-dimensional filling factors. That the SAG efficiency cannot be greater than one is found to be true, if a two-dimensional filling factor is employed; this treatment involves three-dimensional transport of the growth rendering species. Finite element method has been used to derive the longitudinal thickness profile in the openings by considering the three-dimensional model. The derived longitudinal thickness profile is found to fit very well with the experimentally measured profile. The diffusion length of the growth rendering species is also extracted from the above profile. For comparison, light field patterns are also treated. Our analysis confirms many previous observations that SAG in the light field patterns can be sufficiently explained by the two-dimensional model.

  • 30. Seo, S. W.
    et al.
    Soares, F. M.
    Baek, J. H.
    Jiang, W.
    Fontaine, N. K.
    Scott, R. P.
    Yang, C.
    Geisler, D. J.
    Yan, J.
    Broeke, R. G.
    Cao, J.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Pham, A. H.
    Ben Yoo, S. J.
    Monolithically integrated InP photonic micro systems on a chip for O-CDMA and OAWG applications2007Ingår i: 2007 Photonics in Switching, PS, 2007, s. 97-98Konferensbidrag (Refereegranskat)
    Abstract [en]

    A monolithically integrated InP chip for optical arbitrary waveform generation (OAWG) and/or pulse-coding/decoding is demonstrated using a 20-GHz AWG pair and 10 high-speed phase modulators. The fabrication and performance of the InP chip will be presented.

  • 31. Soares, F. M.
    et al.
    Fontaine, N. K.
    Wei, J.
    Seo, S. W.
    Baek, J. H.
    Broeke, R. G.
    Cao, J.
    Okamoto, K.
    Yoo, S. J. B.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Compact InP-Based 16-channel O-CDMA encoder/decoder2007Ingår i: 2007 IEEE LEOS annual meeting conference proceedings: Lake Buena Vista, FL, 21-25, October, 2007, IEEE , 2007, s. 723-724Konferensbidrag (Refereegranskat)
    Abstract [en]

    A very compact InP-Based 16-channel O-CDMA encoder-/decoder chip (3.8mm × 6.8mm) has been designed, fabricated and characterized. The device successfully performs O-CDMA spectral encoding.

  • 32. Soares, F. M.
    et al.
    Jiang, W.
    Fontaine, N. K.
    Seo, S. W.
    Baek, J. H.
    Broeke, R. G.
    Cao, J.
    Okamoto, K.
    Olsson, Fredrik E.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Yoo, S. J. B.
    InP-based arrayed-waveguide grating with a channel spacing of 10 GHz2008Ingår i: OFC/NFOEC - Conf. Opt. Fiber Commun./Natl. Fiber Opt. Eng. Conf., 2008, s. -69Konferensbidrag (Refereegranskat)
    Abstract [en]

    We realize a high-precision 10-channel InP-based Arrayed-Waveguide Grating (AWG) with a 10-GHz channel spacing. The AWG showed approximately 10dB excess-loss, 10 dB crosstalk, and 8.2 × 6.8 mm2 dimensions.

  • 33. Zhou, X. P.
    et al.
    Soares, F. M.
    Fontaine, N. K.
    Baek, J. H.
    Cheung, S.
    Shearn, M.
    Scherer, A.
    Olsson, Fredrik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik (Stängd 20120101), Halvledarmaterial, HMA (Stängd 20120101).
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik (Stängd 20120101), Halvledarmaterial, HMA (Stängd 20120101).
    Liu, K. Y.
    Tsang, W. T.
    Yoo, S. J. B.
    16-channel × 100-GHz monolithically integrated O-CDMA transmitter with SPECTS encoder and seven 10-GHz mode-locked lasers2010Ingår i: 2010 Conference on Optical Fiber Communication, Collocated National Fiber Optic Engineers Conference, OFC/NFOEC 2010, New York: IEEE , 2010, s. 5465650-Konferensbidrag (Refereegranskat)
    Abstract [en]

    We demonstrate a fully-integrated O-CDMA transmitter by monolithically integrating 7 collidingpulse mode-locked lasers with two arrayed waveguide gratings and 16 phase modulators in InP technology.

1 - 33 av 33
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