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  • 1.
    Luo, Jun
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Wu, Dongping
    State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai .
    Qiu, Zhijun
    State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai .
    Lu, Jun
    Department of Physics, Chemistry and Biology, Linköping University.
    Hultman, Lars
    Department of Physics, Chemistry and Biology, Linköping University.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shi-Li
    State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai .
    On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain2011In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 58, no 7, p. 1898-1906Article in journal (Refereed)
    Abstract [en]

    This paper focuses on different silicidation schemes toward a controllable NiSi-based metallic source/drain (MSD) process with restricted lateral encroachment of NiSi. These schemes include thickness control of Ni, Ni-Pt alloying, and two-step annealing. Experimental results show that all the three process schemes can give rise to effective control of lateral encroachment during Ni silicidation. By controlling t(Ni), NiSi-based MSD metal-oxide-semiconductor field-effect transistors (MOSFETs) of gate length L-G = 55 nm are readily realized on ultrathin-body silicon-on-insulator substrates with 20-nm surface Si thickness. With the aid of dopant segregation (DS) to modifying the Schottky barrier heights of NiSi, both n- and p-type MSD MOSFETs show significant performance improvement, compared to reference devices without DS.

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