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  • 52451.
    Österman, Anna
    KTH, School of Architecture and the Built Environment (ABE), Urban Planning and Environment, Geodesy and Geoinformatics.
    Map visualization in ArcGIS, QGIS and MapInfo2014Independent thesis Basic level (degree of Bachelor), 10 credits / 15 HE creditsStudent thesis
    Abstract [en]

    Mapproduction, also called cartography, is one of the processes of visualrepresentation of reality. This practice has for a long time been of hugeinterest to humanity and was initially a handcraft[2]. Today most maps areproduced with the help of computers and are often the last step of a GISanalysis – the way the result is presented. This makes knowledge of mapproduction important and relevant when working with different GIS analysis. Thereare several GIS programs on the market, both free and commercial software.ArcGIS is one of the most common programs used by companies when producing mapsand is often used in universities for teaching. However, there are otherprograms on the market. Two examples of these are QGIS and MapInfo. QGIS isfree open source software and MapInfo is licensed software like ArcGIS. Theobjectives of this thesis are to explore and learn the steps of map productionin these programs and to look at how interchangeable the programs are in mapediting. This is examined by trying to create the same map and map series inthe three programs. From the process and result an evaluation schema is createdto present the functionality as well as a discussion to raise the pros and consof the programs. The result of creating a simple map shows that it is possibleto create the same map in all three programs, except from some minordifferences. When looking at the evaluations schema it is clear that theprograms have almost the same functionality. The biggest difference is thatboth ArcGIS and QGIS have a tool for generating an atlas while MapInfo lacksthis functionality. What the evaluation schema does not show is the differencesin how user-friendly the programs are. This is further narrated in the discussionpart of the report where the pros and cons are reported. The conclusion is thatArcGIS and QGIS are much alike when it comes to producing maps while MapInfoworks differently and are harder to get used to. The result gives a goodindication of which programs to choose and what type of functionality thatexists, though a more profound study could have been done where more types ofmaps were created for more reliable results.

  • 52452.
    Österman, Cecilia
    et al.
    Kalmar Maritime Academy, Linnaeus University.
    Rose, Linda M
    KTH, School of Technology and Health (STH), Health Systems Engineering, Ergonomics.
    Assessing financial impact of maritime ergonomics on company level: a case study2015In: Maritime Policy & Management, ISSN 0308-8839, E-ISSN 1464-5254, Vol. 42, no 6Article in journal (Refereed)
    Abstract [en]

    The present paper reports a case study examining a conceptual framework for assessing financial impact of occupational maritime ergonomics in a Swedish shipping company. Specifically, the aim was to study the availability and applicability of suggested determinants for operational performance, routines for estimating the effects of ergonomics and the customer’s (sea transport buyer’s) demands for ergonomics management on the case company. The results show that the determinants and subcategories for operational performance in terms of productivity, efficiency and quality are present and applicable, albeit not measured to any large extent. No routines or specific methods for measuring or estimating cost and effects of ergonomics investments, accidents and operational disturbances were found. Further, the results show that the sea transport buyers increasingly express interest for and place demands related to maritime ergonomics, for instance, through compliance of specific standards and guiding principles linked to maritime ergonomics. It is concluded that in order to support and enable managers’ ability to make well-informed decisions and prioritizations, between investments, ergonomic or other, increased knowledge is needed of the financial effects of ergonomics on company core value processes. There is also a need to develop and implement usable tools to simplify these measuring procedures.

  • 52453.
    Österman, Cecilia
    et al.
    Chalmers ChalmersUniversity of Technology,Shipping and Marine Technology,.
    Rose, Linda M
    KTH, School of Technology and Health (STH), Ergonomics (Closed 20130701).
    Osvalder, Anna-Lisa
    Chalmers University of Technology, Product and Production Development.
    Exploring Maritime Ergonomics from a Bottom Line Perspective2010In: WMU Journal of Maritime Affairs (JoMA), ISSN 1651-436X, E-ISSN 1654-1642, Vol. 9, no 2, 153-168 p.Article in journal (Refereed)
    Abstract [en]

    The present paper reports a study composed of three research activities exploring the economics of ergonomics in a shipping context. First, a literature study aimed to review previous studies on the economics of ergonomics in general and within the maritime domain in particular; and moreover, to ascertain the key ergonomic factors addressed in contemporary maritime ergonomic research. Second, the concept of ergonomics was probed from a stakeholder perspective through nine semi-structured qualitative  interviews. Third, structured interviews were held with representatives of ten Swedish shipping companies to investigate if the shipowners are aware of and calculate the economic effects of ergonomics. The results show that severalmodels and methods have been developed to estimate costs and benefits of ergonomics in other industries, but no studies were found from the shipping industry.Whether these methods can be readily adapted to the shipping industry has to be investigated further. While contemporary maritime ergonomic literature showed a focus on physical ergonomic and health and safety issues, the results of the stakeholder interviews indicated a focus on organizational ergonomics. The Swedish shipowners calculate the costs of sick-leave, but do not estimate the economic effects of ergonomics on a regular basis.

  • 52454.
    Österman, John
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Characterization of electrical properties in 4H-SiC by imaging techniques2004Doctoral thesis, comprehensive summary (Other scientific)
    Abstract [en]

    4H-SiC has physical properties supremely suited for a variety of high power, high frequency and high temperature electronic device applications. To fully take advantage of the material's potential, several problems remain to be solved. Two of the most important are (1) the characterization and understanding of crystallographic defects and their electrical impact on device performance, and (2) the introduction of acceptor dopants, their activation and control of the final distribution of charge carriers. Two main experimental methods have been employed in this thesis to analyze 4H-SiC material with respect to the issues (1) and (2): electron beam induced current (EBIC) and scanning spreading resistance microscopy (SSRM), respectively.

    EBIC yields a map of electron-hole-pairs generated by the electron beam of a scanning electron microscope and collected in the depleted region around a junction. EBIC is conducted in two modes. In the first mode the EBIC contrast constitutes a map of minority carrier diffusion lengths. Results from these measurements are compared to white beam syncrotron x-ray topography and reveal a one-to-one correlation between lattice distortions and the electron diffusion length in n+p 4H-SiC diodes. In the second EBIC mode, the junction is highly reverse biased and local avalanche processes can be studied. By correlating these EBIC results with other techniques it is possible to separate defects detrimental to device performance from others more benign.

    SSRM is a scanning probe microscopy technique that monitors carrier distributions in semiconductors. The method is for the first time successfully applied to 4H-SiC and compared to alternative carrier profiling techniques; spreading resistance profiling (SRP), scanning electron microscopy (SEM) and scanning capacitance microscopy (SCM). SCM successfully monitors the doping levels and junctions, but none of these techniques fulfill the requirements of detection resolution, dynamic range and reproducibility. The SSRM current shows on the other hand a nearly ideal behavior as a function of aluminum doping in epitaxially grown samples. However, the I-V dependence is highly non-linear and the extremely high currents measured indicate a broadening of the contact area and possibly an increased ionization due to sample heating. Finite element calculations are performed to further elucidate these effects.

    SSRM is also applied to characterize Al implantations as a function of anneal time and temperature. The Al doping profiles are imaged on cleaved cross-sections and the measured SSRM current is integrated with respect to depth to obtain a value of the total activation. The evaluation of the annealing series shows a continuous increase of the activation even up to 1950 °C. Other demonstrated SSRM applications include local characterization of electrical field strength in passivating layers of Al2O3, and lateral diffusion and doping properties of implanted boron.

  • 52455.
    Österman, Stefanie
    et al.
    KTH, School of Architecture and the Built Environment (ABE), Civil and Architectural Engineering.
    Alsawadi, Nour
    KTH, School of Architecture and the Built Environment (ABE), Civil and Architectural Engineering.
    Utveckling av samarbetet mellan beställare, huvudentreprenör och underentreprenör2015Independent thesis Basic level (university diploma), 10 credits / 15 HE creditsStudent thesis
    Abstract [en]

    In the construction branch you often work with projects where multiple parties cooperate. It’s important that the collaboration between the parties works well to achieve a positive result.

    Our aim with this thesis is to study how cooperation works, can be improved and developed between client, contractors and subcontractors on a construction company. In order to develop the joint work, you have to examine the common problems and deficiencies that may arise.

     

    The implementation has been done through interviews with selected partners in the projects studied in order to obtain as complete and accurate as possible of what works and where the strengths and weaknesses are. The projects with wide variation have been studied in this thesis in order to locate and verify the most common problems when collaborating.

     

    Some of the most important aspects of positive cooperation is to have a good communication, smart planning before the project begin and a well-managed schedule. It’s also very important that all the parties know the meaning of their role and stick to their responsibility. It’s fundamental that Byggtech cares for the trust they have build with their clients as their business depends on a solid partnership with the contracted clients.

     

    The conclusions that have been drawn from this thesis are that clarity, common guidelines and a good communication are important to have a good collaboration between all the parties in order to develop the collaboration in a positive course.

  • 52456.
    Östevik, Agnes
    et al.
    KTH, School of Industrial Engineering and Management (ITM), Machine Design (Dept.).
    Örtengren, Alexander
    KTH, School of Industrial Engineering and Management (ITM), Machine Design (Dept.).
    Stöldsäker insamlingsbehållare för blybatterier2016Independent thesis Basic level (degree of Bachelor), 10 credits / 15 HE creditsStudent thesis
    Abstract [en]

    Lead batteries are collected for recycling due to their containment of environmental hazardous substances, lead and acid. The current collecting system is exposed to theft due to the great amount of valuable lead within the batteries. The remains of stolen lead batteries with the lead removed have been found on the bare ground and batteries have also been found in vehicles transporting them abroad in order to be sold. As a result of theft, the recycling of lead batteries can´t be performed. On behalf of Stockholm Vatten AB, the task to develop a theft-proof container for lead batteries was given.

    Stockholm Vatten AB is in charge of the areas in which the containers are placed. The areas are defined as recycling centres, often placed in relation to gas stations or arranged as larger manned areas.

    The development process was based on a research which included visits at recycling centres and interviews. Continuous meetings with Stockholm Vatten provided fundamental information about the task. Requirements were defined in a requirement specification on which further development was based. From specified difficulties ideas were generated and put together into four concepts; Plinten, Vinkeln, Spiralen and Extern. Assessments were given from Stockholm Vatten and staff from the recycling areas. Together with different evaluation methods the general ideas from Spiralen was selected to be the basis on which the final concept was built upon.

    The functions and construction of Spiralen was further developed. Material and components were defined on which sizing later was made. Effort was put into the development of the theft-proof construction and the safe keeping of users. In order to ensure an easily made submit of lead batteries, focus was also put into the design arranging of components.

    The main function of the theft-proof container is provided by a spiral-shaped slide on which the batteries are transported upon within the container. A hatch ensures a secure hand-in and the covering sheath protects users from acid and batteries from rain and theft.

    The theft-proof container meets the requirements defined in the specification of requirements. With its spiral-shaped slide and sheath cover the theft-proof function is created together with a safer hand-in process which will reduce the risk of injuries. Within the developed container a greater amount of lead batteries can be collected and maintained, and thus, recycling can be guaranteed.

  • 52457.
    Östlin, Andreas
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
    Electronic structure studies and method development for complex materials2015Doctoral thesis, comprehensive summary (Other academic)
    Abstract [en]

    Over the years electronic structure theory has proven to be a powerful method with which one can probe the behaviour of materials, making it possible to describe and predict material properties. The numerical tools needed for these methods are always in need of development, since the desire to calculate more complex materials pushes this field forward. This thesis contains work on both this implementational and developmental aspects.

    It begins by reviewing density functional theory and dynamical mean field theory, with the aim of merging these two methods. We point out theoretical and technical issues that may occur while doing this. One issue is the Padé approximant, which is used for analytical continuation. We assess the approximant and point out difficulties that can occur, and propose and evaluate methods for their solution.

    The virial theorem is assessed within the framework of density functional theory merged with many-body methods. We find that the virial theorem is extended from its usual form, and confirm this by performing practical calculations.

    The unified theory of crystal structure for transition metals has been established a long time ago using early electronic structure calculations. Here we implement the first- principles exact muffin-tin orbitals method to investigate the structural properties of the 6d transition metals. The goal of our study is to verify the existing theory for the mostly unknown 6d series and the performance of the current state-of-the art in the case of heavy d metals. It is found that these elements behave similarly to their lighter counterparts, except for a few deviations. In these cases we argue that it is relativistic effects that cause this anomalous behaviour. Palladium is then studied, taking many-body effects into account. We find that we can reproduce experimental photoemission spectra by these methods, as well as the Fermi surface.

    The thesis ends with an investigation of the stacking fault energies of the strongly correlated metal cerium. In addition to providing the first ab-initio stacking fault data for the two cubic phases of Ce, we discuss how these results could have an impact on the interpretation of the phase diagram of cerium

     

  • 52458.
    Östlin, Andreas
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
    Electronic structure studies and method development for complex materials2013Licentiate thesis, comprehensive summary (Other academic)
    Abstract [en]

    Over the years electronic structure theory has proven to be a powerful method with which one can probe the behaviour of materials, making it possible to predict properties that are difficult to measure experimentally. The numerical tools needed for these methods are always in need of development, since the desire to calculate more complex materials pushes this field forward. This thesis contains work on both this implementational and developmental aspects. In the first part we investigate the structural properties of the 6d transition metals using the exact muffin-tin orbitals method. It is found that these elements behave similarly to their lighter counterparts, except for a few deviations. In these cases we argue that it is relativistic effects that cause this anomalous behaviour. In the second part we assess the Padé approximant, which is used in several methods where one wants to include many-body effects into the electronic structure. We point out difficulties that can occur when using this approximant, and propose and evaluate methods for their solution.

  • 52459.
    Östlind, Elin
    KTH, School of Architecture and the Built Environment (ABE), Civil and Architectural Engineering, Building Technology and Design.
    Verksamhetssystemet: En utvecklingsprocess av ett företags verksamhetssystem2014Independent thesis Basic level (university diploma), 10 credits / 15 HE creditsStudent thesis
    Abstract [en]

    This thesis deals with the development work in a company that wants to go from good to better. It is about developing the company's business systems so as to better follow the company's activities. One of the purposes of having a business system is that all employees in the same field of expertise will work with the same templates and standards. This is to enable anyone with similar knowledge to be able to easily take over after someone else without a too-long learning curve.

    The construction companyhad a business system that was old and obsolete. It had not been updated for several years and was badly in need of an overhaul. The company management decided that it was time to do this. No one could imagine how great the need was, or how much work it would be. A group was elected to start updating the business system, and I came into this group shortly after it was started up.

    In order to get an estimate of how big the need of an update on the business system had become, we had to conduct interviews with the building company’s staff. During the interviews, it was found that the business system was followed sporadically. One of the reasons for this was that reality did not correspond to what was written in the business system. Another reason was that it was hard to find the right documents in the business system. Everything lay helter-skelter in various editions and nobody knew which document was of the latest version.

    Objective 1 and 2 was thus to slim down the business system to a reasonable level, and finding the common thread in the process. We would be forced to make the business system to fit the real world and not vice versa. In addition to objectives 1 and 2, the decision was taken that the company should be certified according to ISO 9001 and 14001, which became objective 3. During the interviews another deficiency in the business system was found; the experience feedback from finished projects was flawed, this came to be objective 4. With the objectives set, it was time to get started.

    Results

    Objective 1    The business system was slimmed down by merging two chapters into one. Six requirements, 182 documents and 25 pages on the internal website were removed.

    Objective 2    The business system was revised from function- to process-oriented. The process got a red thread to follow from beginning to end. Duplicated requirements and documents were removed.

    Objective 3    The certification according to ISO 9001 and 14001 was achieved about half a year after the scheduled deadline.

    Objective 4    A control document for the final phase of a project was developed to facilitate experience reversal back to the company. A routine of how employees can share their ideas on how the business system can be updated was also presented.

  • 52460.
    Östling, Erik
    KTH, School of Industrial Engineering and Management (ITM), Machine Design (Dept.).
    En analys av innovationsprocessen På Mediaföretaget AB2009Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
    Abstract [en]

    Medieföretaget AB is a Swedish Media Company that covers several different business areas.

    The company daily produces one of the biggest newspapers in Sweden and publishes editorial

    news on one of the country’s most visited news homepage. The company also has smaller

    firms that produce new business models. Due to big changes in the media climate over the

    world and a new company management team the company in November 2008 started a

    department for innovation. The main purpose of the department was to create a structured

    way for managing ideas and to promote innovation. The innovation process was inspired by

    the one described in the book Innovation by Carlson and Wilmot from the Stanford research

    Institute.

    The purpose with this final thesis was on behalf of the innovation manager to detect obstacles

    in the innovation process and to give recommendations for improvement of the process. The

    results of the task were based on an empirical- and theoretical analysis. The empirical analysis

    was based on just over 208 survey answers, seven interviews ant a by the student participating

    observation. The theoretical reference frame contained theories about innovation processes,

    project portfolio management and innovation measurement.

    Amongst the obstacles that were detected the survey showed that lack of time was the main

    reason for champions not to continue working with their ideas after leaving them to the

    department for innovation. But another reason was simply lack of engagement. Several of the

    interview objects pointed out the inadequateness of a well-communicated innovation strategy.

    But also that the company was working on to many different projects.

    Some of the recommendations the student presents in the end of the report is, spreading

    information in the company in a better way, having a person responsible for innovation in

    each department, having a more sophisticated reward strategy or more free time for working

    with new ideas and potential innovations. A more organizational recommendation was to

    collect all the different projects in the company and to visualize them in a project portfolio.

  • 52461.
    Östling, Fredrik
    et al.
    KTH, School of Information and Communication Technology (ICT).
    Fredriksson, Johan
    KTH, School of Information and Communication Technology (ICT).
    Adoption factors for cloud based enterprise resource planning systems:: And how system vendors can act on these2012Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
    Abstract [en]

    No matter how big a company is or what market segment it serves it still needs administration and supervision. An ERP system is a system that has the sole purpose to help a company with these activities and is often considered the backbone that intertwines the key business-processes in an organization. More specifically an ERP system can help a company to manage everything from product planning, purchasing, and inventory control to interaction with suppliers and customer service. Implementing a competitive ERP system into an organization can however become very capital intense, and small and medium enterprises do not often have the financial strength to handle this investment. An important step in the evolution of ERP is therefore cloud based ERP systems which are considered an enabler for many advantages for small and medium enterprises.

    The purpose of this master thesis is to establish which factors that affect the decision of small and medium enterprises to move their ERP system to the cloud or to implement a brand new cloud solution. Further, these factors have been evaluated and investigated from a strategic perspective in order to provide managerial recommendations for vendor companies. The main research questions for this master thesis are therefor:

    • What factors affect the client’s adoption decision of cloud based ERP systems technology?

    • How can the vendors cope with these factors?

    In order to collect empirical data, a set of interviews have been conducted with vendors which is targeting the small and medium enterprise segment; and customers to these vendors which have adopted a cloud based ERP system. These companies are the system vendors Implema AB, Alterview, and Unit4Agresso and the adopters Handheld, Naty, Grays American Stores, and Södertörns Högskola. The resulting data from this have been analyzed with the help from a theoretical framework which consists of theories from technological change (Types of technological change); Technological change as a social process (Technology diffusion; Technology adoption); Technology system evolution (Salient and Reverse Salient).

    The results of the empirical research show that risk, function, cost and flexibility are strong contributing factors for the adoption of cloud based ERP systems.

  • 52462.
    Östling, Jeanette
    KTH, School of Biotechnology (BIO).
    An Approach to Improve the Detection System of a Diagnostic Enzyme-Linked Immunosorbent Assay2016Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
  • 52463.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Nanoscaled SiGe based MOSETs2010In: Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, 1-8 p.Conference paper (Refereed)
    Abstract [en]

    This paper presents an overview of the technological challenges facing the future scaling of device dimensions needed to meet the performance scaling in accordance with Moore's law. A number of performance boosters have to be introduced in order to keep up with the expected performance gain in each new technology node. The introduction of strain engineering is an important feature as well as the implementation of high-k dielectrics. From the 32 nm node and forward there is an urgent search for a fundamental breakthrough to achieve low access resistance to the drain and source areas. This paper will focus to a large extent on this latter area and discuss metallic source/drain (MSD) contacts in nanoscaled MOSFET technology. MSD contacts offer extremely low S/D parasitic resistance, abruptly sharp junctions between S/D and channel and preferably low temperature processing. Recently great efforts have been achieved on Pt- and Ni-silicide implementation. A conclusion is that MSD MOSFETs are competitive candidates for future generations of CMOS technology.

  • 52464.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    SiC device technology for energy efficiency and high temperature operation2013In: 2013 IEEE International Conference of Electron Devices and Solid-State Circuits: EDSSC 2013, 2013Conference paper (Refereed)
    Abstract [en]

    This paper will give a brief overview of current state of the art device technology for SiC discrete devices and applications. The superior energy efficiency of SiC devices will be demonstrated and compared to its silicon counterparts.

  • 52465.
    Östling, Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Silicon Carbide Based Power Devices2010In: 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010, 13.3.1-13.3.4 p.Conference paper (Refereed)
    Abstract [en]

    Silicon carbide is considered as a strong power semiconductor material candidate to address the emerging market of hybrid electrical vehicle, photovoltaic inverter applications as well as power supplies. This paper presents the current technology status on the most promising device types that are or soon will be available on the market.

  • 52466.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Dentoni Litta, Eugenio
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hellström, Per-Erik
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Recent advances in high-k dielectrics and inter layer engineering2014In: Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, 2014Conference paper (Refereed)
    Abstract [en]

    State-of-the-art CMOS technology relies on the integration of multi-layer high-k/metal gate stacks in order to achieve high capacitance density while fulfilling the requirements in terms of gate leakage current density, interface state density, channel mobility, threshold voltage and reliability. Conventional SiOx/HfO2 gate dielectric stacks are capable of meeting the performance targets of current technology nodes and have been shown to possess sufficient short-term scalability, but solutions providing enhanced long-term scalability are actively researched, mostly via integration of higher-k oxides or high-k interfacial layers. This paper provides an overview of recent research efforts in this area, focusing on integration of high-k interfacial layers. We then analyze the potential scalability improvement which can be obtained through integration of thulium silicate as interfacial layer and summarize the main results supporting its applicability to future technology nodes.

  • 52467.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Domeij, Martin
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zaring, Carina
    Konstantinov, A.
    Ghandi, Reza
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Buono, Benedotto
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hallen, Anders
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    SiC bipolar power transistors: Design and technology issues for ultimate performance2010In: 2010 MRS Spring Meeting, 2010, Vol. 1246, 175-186 p.Conference paper (Refereed)
    Abstract [en]

    Silicon carbide (SiC) semiconductor devices for high power are becoming more mature and are now commercially available as discrete devices. Schottky diodes have been on the market since a few years but also bipolar junction transistors (BJTs), JFETs and MOSFETs are now reaching the market. The interest is rapidly growing for these devices in high power and high temperature applications. The BJTs have low conduction losses, fast switching capability, operate in normally-off mode, have high radiation hardness, and can handle high power density.

    This paper will review the current state of the art in active switching device performance with special emphasis on BJTs. Device performance has been demonstrated over a wide temperature interval. A very important feature in high power switch applications is the low on-resistance of a device. Better material quality and epi processes suppress the amount of basal plane dislocations to avoid stacking fault formation generated during high current injection. This has long been a concern for bipolar SiC devices but several research reports and long term reliability measurements of pn-junctions show that the bipolar degradation problem can be solved by a fine-tuned epitaxial technique. A discussion on surface passivation control is included. Finally, an example of a power switching module is given also demonstrating the excellent paralleling capability of BJTs.

  • 52468.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ghandi, Reza
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Buono, Benedetto
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Lanni, Luigia
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, B.Gunnar
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    SiC Bipolar Devices for High Power and Integrated Drivers2011In: Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE, IEEE conference proceedings, 2011, , 4 p.227-234 p.Conference paper (Refereed)
    Abstract [en]

    Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. The first SiC device to reach the market was the unipolar Schottky diode. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now being offered in the voltage range up to 1.2 kV. SiC material quality and epitaxy processes have greatly improved and degradation free 100 mm wafers are readily available, which has removed one obstacle for the introduction of bipolar devices. The SiC wafer roadmap looks very favorable as volume production takes off. Other advantages of SiC are the possibility of high temperature operation (>; 300 °C) and in radiation hard environments, which could offer considerable system advantages. Thanks to the mature SiC process technology, low-power integrated circuits are now also viable. Such circuits could find use in integrated drivers operating at elevated temperatures.

  • 52469.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ghandi, Reza
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, Bengt Gunnar
    KTH, School of Information and Communication Technology (ICT).
    Buono, Benedetto
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Silicon carbide bipolar power devices2011In: ECS Transactions, 2011, no 8, 189-200 p.Conference paper (Refereed)
    Abstract [en]

    This paper reviews the current state of the art in active switching device performance for SiC BJTs. In addition, some results from simulations are shown with particular attention on temperature and design dependence of the current gain. A design to improve conductivity modulation is also suggested. Finally, performance of a 2.8 kV BJT are illustrated. This device demonstrates high current gain of 52, low on-resistance of 6.8 mΩcm 2, fast switching, and no bipolar degradation.

  • 52470.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Ghandi, Reza
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    SiC power devices - present status, applications and future perspective2011In: 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2011, 10-15 p.Conference paper (Refereed)
    Abstract [en]

    Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. Recently Schottky diodes are offered by both USA and Europe based companies. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now available on the commercial market. The interest is rapidly growing for these devices in high power and high temperature applications. The main advantages of wide bandgap semiconductors are their very high critical electric field capability. From a power device perspective the high critical field strength can be used to design switching devices with much lower losses than conventional silicon based devices both for on-state losses and reduced switching losses. This paper reviews the current state of the art in active switching device performance for both SiC and GaN. SiC material quality and epitaxy processes have greatly improved and degradation free 100 mm wafers are readily available. The SiC wafer roadmap looks very favorable as volume production takes off. For GaN materials the main application area is geared towards the lower power rating level up to 1 kV on mostly lateral FET designs. Power module demonstrations are beginning to appear in scientific reports and real applications. A short review is therefore given. Other advantages of SiC is the possibility of high temperature operation (> 300 degrees C) and in radiation hard environments, which could offer considerable system advantages.

  • 52471.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Gudmundsson, Valur
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hellström, Per-Erik
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, B. Gunnar
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Zhen
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Towards Schottky-Barrier Source/Drain MOSFETs2008In: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 / [ed] Yu M, An X, NEW YORK: IEEE , 2008, 146-149 p.Conference paper (Refereed)
    Abstract [en]

    This paper provides an overview of metal source/drain (S/D) Schottky-barrier (SB) MOSFET technology. The technology offers several benefits for scaling CMOS, i.e., extremely low source/drain resistance, sharp junctions from S/D to channel and low temperature processing. A successful implementation of the technology needs to overcome new obstacles such as SB height engineering and precise control of silicide growth. Device design factors such as S/D to gate underlap, Si film thickness and oxide thickness affect device performance owing to their effects on the SB width. In the past two years several groups have demonstrated high-performance SB MOSFETs, which places the technology as a promising candidate for future generations of CMOS technology.

  • 52472.
    Östling, Mikael
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Haralson, Erik
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Malm, Gunnar
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    High performance SiGeC HBT technology for radio frequency applications2004In: 2004 Asia-Pacific Radio Science Conference - Proceedings, 2004, 480-483 p.Conference paper (Refereed)
    Abstract [en]

    In this paper, the current status of SiGeC bipolar technologies for high-speed and wireless applications is reviewed. The key process features and radio frequency (RF) performance of advanced SiGe bipolar processes are summarized. The different approaches to form a self-aligned base-emitter structure with minimum parasitics are discussed. SiGe:C epitaxy allows very good profile control of the narrow base doping peak, which enables cut-off frequencies above 300 GHz. Downscaling of device dimensions for improved RF performance is also investigated using TCAD simulations. Finally, novel device structures using SOI substrates are discussed.

  • 52473.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Henkel, Christoph
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Dentoni Litta, Eugenio
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, Gunnar B.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hellström, Per-Erik
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Naiini, Maziar
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Olyaei, Maryam
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Vaziri, Sam
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Bethge, O.
    Bertagnolli, E.
    Lemme, Max C.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Atomic layer deposition-based interface engineering for high-k/metal gate stacks2012In: ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE , 2012, 6467643- p.Conference paper (Refereed)
    Abstract [en]

    This review will discuss the in-situ surface engineering of active channel surfaces prior to or during the ALD high-k/metal gate deposition process. We will show that by carefully choosing ALD in-situ pre-treatment methods and precursor chemistries relevant electrical properties for future high-k dielectrics can be improved. Different high-k dielectrics such as Hafnium-Oxide (HfO2), Aluminum-Oxide (Al2O3), Lanthanum-Lutetium-Oxide (LaLuO3) and Lanthanum-Oxide (La 2O3) for CMOS-based device technology are investigated in combination with Silicon (Si) and Germanium (Ge) substrates. Additionally, the use of ALD for deposition of a high-k dielectric gate stack on Graphene is discussed.

  • 52474.
    Östling, Mikael
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Koo, S. M.
    Zetterling, Carl-Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Khartsev, Sergiy
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Grishin, Alexander M.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices2004In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 469-70, 444-449 p.Article in journal (Refereed)
    Abstract [en]

    Silicon carbide semiconductor technology has emerged as a very good candidate to replace traditional Si devices in special applications such as low loss power switching and high temperature electronics. Ferroelectric thin films exhibit interesting properties for use in semiconductor technology due to the spontaneous polarization which can be switched by an externally applied electric field, and thus are attractive for nonvolatile memory and sensor applications. In this work, the successful realization of ferroelectric thin films in SiC devices is described. The first experimental prototype devices are presented and discussed: A novel integration technique of junction metal-oxide-semiconductor field effect transistors (JMOSFETs) and nonvolatile FETs (NVFETs) on a single 4H-SiC substrate is presented. A constant current control device is based on the SiC JMOSFET. The drain current is effectively controlled and kept constant by a buried junction gate. A new high temperature SiC NVFET with a similar temperature stable current drive is also demonstrated. The nonvolatile memory device, based on the ferroelectric gate stack, was shown to operate up to 300 C with memory effect retained up to 200degreesC.

  • 52475.
    Östling, Mikael
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Koo, Sang-Mo
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Lee, Sang-Kwon
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Zetterling, Carl Mikael
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Grishin, Alex
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Thin films in silicon carbide semiconductor devices2004In: Proceedings of SPIE, the International Society for Optical Engineering, ISSN 0277-786X, Vol. 5774, 5-10 p.Article in journal (Refereed)
    Abstract [en]

    Silicon carbide (SiC) semiconductor devices have been established during the last decade as very useful high power, high speed and high temperature devices because of their inherent outstanding semiconductor materials properties. Due to its large band gap, SiC possesses a very high breakdown field and low intrinsic carrier concentration which according makes A high voltage and high temperature operation possible. SiC is also suitable for high frequency device applications, because of the high saturation drift velocity and low permittivity. Thin film technology for various functions in the devices has been heavily researched. Suitable thin film technologies for Ohmic and low-resistive contact formation, passivation and new functionality utilizing ferroelectric materials have been developed. In ferroelectrics, the spontaneous polarization can be switched by an externally applied electric field, and thus are attractive for non-volatile memory and sensor applications. A novel integration of Junction-MOSFETs (JMOSFETs) and Nonvolatile FETs (NVFETs) on a single 4H-SiC substrate is realized. SiC JMOSFET controls the drain current effectively from the buried junction Late thereby allowing for a constant current level at elevated temperatures. SiC NVFET has similar functions with non-volatile memory capability due to ferroelectric gate stack. which operated up to 300degreesC with memory function retained up to 200degreesC.

  • 52476.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Koo, S.-M.
    Domeij, Martin
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Danielsson, Erik
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    SiC Device Technologies2005In: Encyclopedia of RF and Microwave Engineering: vol 5 / [ed] Kai Cang, Wiley-Blackwell, 2005, 1, 4613- p.Chapter in book (Refereed)
  • 52477.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Lee, Hyung-Seok
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Domeij, Martin
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Zetterling, Carl Mikael
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Silicon carbide devices and processes - Present status and future perspective2006In: Proceedings of the International Conference Mixed Design of Integrated Circuits and Systems / [ed] Napieralski, A, 2006, 34-42 p.Conference paper (Refereed)
    Abstract [en]

    Silicon carbide electronic devices are already commercially available in a few application areas such as high voltage rectifiers and emerging rf power amplifiers. Over the past 15 years a very rapid progress of both materials and device quality has been seen and is very encouraging for the near future application market. Prototype devices show amazing improvement each year in all device categories as well as a markedly improved wafer quality. However, materials defect issues are still limiting economically viable production of large area devices with high yield. In this paper a thorough review of progress in SiC device process technology and presents the state-of-the art SiC devices as well as new application areas such as ferroelectric field effect transistors.

  • 52478.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Luo, Jun
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Gudmundsson, Valur
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hellström, Per Erik
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, Bengt Gunnar
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Integration of metallic source/drain (MSD) contacts in nanoscaled CMOS technology2010In: ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, 41-45 p.Conference paper (Refereed)
    Abstract [en]

    An overview of metallic source/drain (MSD) contacts in nanoscaled MOSFET technology is provided in this paper. MSD contacts offer several benefits for nanoscaled CMOS, i.e., extremely low S/D parasitic resistance, abruptly sharp junctions between S/D and channel and preferably low temperature processing. In order to achieve high performance MSD MOSFETs, many design parameters such as Schottky barrier height (SBH), S/D to gate underlap, top Si layer thickness, oxide thickness and so on should be optimized. Recently, a lot of efforts have been invested in MSD MOSFETs based on Pt- and Ni-silicide implementation and several promising results have been reported in literature. The experimental work as well as the results of Monte Carlo simulations by this research team and by other research teams is discussed in this paper. It will be shown that the present results place MSD MOSFETs as a competitive candidate for future generations of CMOS technology.

  • 52479.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Luo, Jun
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Gudmundsson, Valur
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hellström, Per-Erik
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, B. Gunnar
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Nanoscaling of MOSFETs and the implementation of Schottky barrier S/D contacts2010In: 2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings, 2010, 9-13 p.Conference paper (Refereed)
    Abstract [en]

    This paper provides an overview of metallic source/drain (MSD) Schottky-barrier (SB) MOSFET technology. This technology offers several benefits for scaling CMOS, i.e., extremely low S/D series resistance, sharp junctions from S/D to channel and low temperature processing. A successful implementation of this technology needs to overcome new obstacles such as Schottky barrier height (SBH) engineering and careful control of SALICIDE process. Device design factors such as S/D to gate underlap, Si film thickness and oxide thickness affect device performance owing to their effects on the SB width. Recently, we have invested a lot of efforts on Pt- and Ni-silicide MSD SB-MOSFETs and achieved some promising results. The present work, together with the work of other groups in this field, places silicide MSD SB-MOSFETs as a competitive candidate for future generations of CMOS technology.

  • 52480.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Luo, Jun Hang
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Gudmundsson, Valur
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hellström, Per-Erik
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, Gunnar
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Technology challenges in silicon devices beyond the 16 nm node2011In: Proceedings of the 18th International Conference: Mixed Design of Integrated Circuits and Systems, MIXDES 2011, 2011, 27-31 p.Conference paper (Refereed)
    Abstract [en]

    An overview of metallic source/drain (MSD) contacts in nano-scaled MOSFET technology is provided in this paper. MSD contacts offer several benefits for nano-scaled CMOS, i.e. extremely low S/D parasitic resistance, abruptly sharp junctions between S/D and channel and preferably low temperature processing. In order to achieve high performance MSD MOSFETs, many design parameters such as Schottky barrier height (SBH), S/D to gate underlap, top Si layer thickness, oxide thickness should be optimized. Recently, efforts have been invested in MSD MOSFETs based on Pt- and Ni-silicide implementation and several promising results have been reported in literature. The experimental work as well as the results of Monte Carlo simulations by several investigators, including the authors, is discussed in this paper. It will be shown that the present results place MSD MOSFETs as a competitive candidate for future generations of CMOS technology.

  • 52481.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, B. Gunnar
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Editorial Selected papers from the 15th Ultimate Integration on Silicon (ULIS) conference2015In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 108, 1-1 p.Article in journal (Refereed)
  • 52482.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, B. Gunnar
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    SELECTED PAPERS FROM THE ESSDERC 2011 CONFERENCE Foreword2012In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 74, 1-1 p.Article in journal (Other academic)
  • 52483.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, B. Gunnar
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Von Haartman, Martin
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hållstedt, Julius
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Hellström, Per-Erik
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shili
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Critical technology issues for deca-nanometer MOSFETs2007In: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, 27-30 p.Conference paper (Refereed)
    Abstract [en]

    An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-K gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed.

  • 52484.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Malm, B. Gunnar
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    von Haartman, Martin
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hållstedt, Julius
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Zhang, Zhen
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hellstrom, Per-Erik
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zhang, Shili
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Device integration issues towards 10 nm MOSFETs2006In: 2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, NEW YORK, NY: IEEE , 2006, 25-30 p.Conference paper (Refereed)
    Abstract [en]

    An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. Implementation of high K gate dielectrics is presented and device performance is demonstrated for TiN metal gate surface channel SiGe MOSFETs with a gate stack based on ALD-formed HfO(2)/Al(2)O(3). Low frequency noise properties for those devices are also analyzed. A selective SiGe epitaxy process for low resistivity source/drain contacts has been developed and implemented in pMOSFETs. A spacer pattering technology using optical lithography to fabricate sub 50 nm high-frequency MOSFETs and nanowires is demonstrated, Finally ultra thin body Sol devices with high mobility SiGe channels are demonstrated.

  • 52485.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Malm, Bengt Gunnar
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hellström, Per-Erik
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Radamson, Henry H.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Isheden, Christian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Seger, Johan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Von Haartman, Martin
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Zhang, Shi-Li
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Novel integration concepts for sige-based rf-MOSFETs2005In: Proc. Electrochem. Soc., 2005, 270-284 p.Conference paper (Refereed)
    Abstract [en]

    An overview of critical integration issues for future generation rf-MOSFETs is presented. The process requirements and implementation of selective epitaxy for the source and drain regions is given. In-situ doping of highly boron doped recessed SiGe S/D is demonstrated. Channel region engineering is discussed and 50 nm strained SiGe pMOSFETs are demonstrated. Implementation of high-κ gate dielectrics is presented and device performance is demonstrated for surface channel MOSFETs with a gate stack based on ALD-formed HfO2/Al 2O3. Low frequency noise properties for those devices are analyzed. Contact metallization issues are critical for ultra scaled devices and here the implementation of NiSi on SiGe(C) regions as well as on ultra thin body SOI MOSFETs are presented. Finally, a spacer pattering technology using optical lithography to fabricate sub-50 nm high-frequency MOSFETs is demonstrated.

  • 52486.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, GunnarKTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    ESSDERC 2011 Proceedings2011Conference proceedings (editor) (Refereed)
  • 52487.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, Gunnar
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    High Speed Electronics2010In: Ion Beams in Nanoscience and Technology / [ed] Ragnar Hellborg, Harry J. Whitlow, Yanweng Zhang, Springer Berlin/Heidelberg, 2010, 1, 457- p.Chapter in book (Other academic)
  • 52488.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Malm, Gunnar
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Radamson, Henry H.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Foreword2011In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 60, no 1Article in journal (Refereed)
  • 52489.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Salemi, Arash
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Elahipanah, Hossein
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Zetterling, Carl-Mikael
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    State of the art Power Switching Devices in SiC and their Applications2016In: 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), IEEE, 2016, 122-123 p.Conference paper (Refereed)
    Abstract [en]

    This paper gives an overview of the current state of the art device technology for SiC discrete devices and applications. The superior switching performance is discusses as well as the energy efficiency of SiC devices. New emerging applications of SiC devices are also discussed focusing on high temperature capability such as integrated digital and analog circuits up to 600 C. Finally, MEMS and Bio applications will be briefly reviewed.

  • 52490.
    Östling, Mikael
    et al.
    KTH, School of Information and Communication Technology (ICT).
    Smith, Anderson
    KTH, School of Information and Communication Technology (ICT).
    Vaziri, Sam
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Delekta, Szymon Sollami
    KTH, School of Information and Communication Technology (ICT).
    Li, Jiantong
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Lemme, Max C.
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits. Siegen University, Germany.
    Emerging graphene device technologies2016In: Emerging Nanomaterials and Devices, Electrochemical Society, 2016, Vol. 75, no 13, 17-35 p., 13Conference paper (Refereed)
    Abstract [en]

    Graphene has a wide range of attractive electrical and mechanical properties. This unique blend of properties make it a good candidate for emerging and future device technologies, such as sensors, high frequency electronics, and energy storage devices. In this review paper, each of the aforementioned applications will be explored along with demonstrations of their operating principles. Specifically, we explore pressure and humidity sensors, graphene base transistor for high frequency applications, and supercapacitors. In addition, this paper provides a general overview of these graphene technologies and, in the case of pressure and humidity sensors, benchmarking against other competing technologies. This paper further shows possible and prospective paths that are suitable for future graphene research to take.

  • 52491.
    Östling, Per
    KTH, School of Architecture and the Built Environment (ABE), Real Estate and Construction Management, Real Estate Planning and Land Law.
    Ändamålet med samfälligheter: Vilket ändamål har befintliga samfälligheter och när bildades de?2011Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
    Abstract [sv]

    Två eller flera fastigheter har ibland ett gemensamt behov av att nyttja ett markområde som är beläget utanför den egna fastigheten. Det finns ett antal olika möjligheter att tillgodose detta behov varav en möjlighet är att bilda en samfällighet. Det finns idag närmare 100 000 samfälligheter i Sverige. I det här arbetet undersöks vilka ändamål dessa samfälligheter har. I arbetet undersöks även när samfälligheter bildats och genom vilken åtgärd bildandet skett. Utgångspunkten är ett uttag ur fastighetsregistret med samtliga registrerade aktiva samfälligheter i Sverige. Samfälligheterna har sedan sorterats och indelats i klasser efter det eller de i fastighetsregistret angivna ändamålen. Ur klasserna med de mest förekommande samfällighetsändamål har slumpmässiga urval gjorts. Bildningstid och bildningsåtgärd för de utvalda samfälligheterna har därefter kontrollerats i fastighetsregistret. Det har även gjorts fallstudier av samtliga samfälligheter i Stockholms kommun och Staffanstorps kommun. Resultatet visar att det absolut vanligaste ändamålet är någon typ av väg. Resultatet visar även att de flesta samfälligheter bildats under 1800-talet vid genomförande av laga skifte. Fallstudierna visar på stora skillnader mellan de jämförda kommunerna. Samfälligheterna i Stockholms kommun är vanligen bildande under senare tid genom någon av de möjliga åtgärderna i fastighetsbildningslagen. Samfälligheterna i Staffanstorps kommun är vanligen bildade enligt de äldre lagstiftningarna för enskifte, laga skifte, hemmansklyvning eller ägostyckning.

  • 52492.
    Östlund, Britt
    Lund University.
    Do computers have a future within the care of elderly people?1993In: Percieved Needs of the Elderly abouT Mobility / [ed] I. Oever; Jan Graafmans, Knegsel Netherlands: Akontes , 1993, Vol. 7Chapter in book (Other academic)
    Abstract [en]

    Summary of remarks with reference to a Sewdish study about new technology in elderly people´s housing

  • 52493.
    Östlund, Britt
    Lund University.
    Experiences with Safety-Alarmes for the Elderly in Sweden1994In: Safety Alarm Systems, Technical Aids and Smart Homes / [ed] Ivan, Oever; Jan, Graafmans, Akontes , 1994, Vol. 7Chapter in book (Other academic)
    Abstract [en]

    The chapter describe the early implementation of safety alarms in Sweden and the result of a study at a service centre i Linkoping.

  • 52494.
    Östlund, Britt
    KTH, School of Technology and Health (STH), Health Systems Engineering, Systems Safety and Management.
    Final Evaluation Report with included Cross Cultural Analysis Report D6.3 for the EC Project GiraffPlus. Combining social interaction and long term monitoring for promoting independent living.2015Report (Other academic)
  • 52495.
    Östlund, Britt
    KTH, School of Technology and Health (STH), Health Systems Engineering, Systems Safety and Management.
    Intermediate Evaulation Report D6.2 for the EC Project GiraffPlus. Combining social interaction and long term monitoring for promoting independent living.2014Report (Other academic)
  • 52496.
    Östlund, Britt
    Lund University.
    KAPITEL 10: Hur kan teknik skapa möjligheter för äldre människor?: Rehabiliteringsteknikens bidrag till en reflektiv praktik2012In: E-hälsa / [ed] Gunvor Gard, Anita Melander Wikman, Studentlitteratur Lund , 2012Chapter in book (Other academic)
    Abstract [sv]

    Kapitlet beskriver rehabiliteringsteknikens bidrag till hur vi kan tänka om äldre och teknik som främjar ett modernt äldreliv och ger exempel på hur äldres erfarenheter och behov kan vara utgångspunkten för utvecklingen av produkter och tjänster.

  • 52497.
    Östlund, Britt
    Lunds universitet.
    Kunskapsöversikt över svensk forskning om användning av informations och kommunikationsteknik2000Report (Other academic)
  • 52498.
    Östlund, Britt
    KTH, School of Technology and Health (STH).
    The benefits of involving oler people in the design process2015In: Human Aspects of IT for the Aged Population. Design for Everyday Life / [ed] Zhou, J. & Salvendy, G., Springer , 2015Conference paper (Refereed)
  • 52499.
    Östlund, Britt
    KTH, School of Technology and Health (STH), Health Systems Engineering, Systems Safety and Management.
    User Evaluation and Application Assessment Report D6.1 for the EC Project GiraffPlus: Combining social interaction and long term monitoring for promoting independent living2013Report (Other academic)
  • 52500.
    Östlund, Britt
    et al.
    Lund University.
    Frennert, Susanne
    Lund University.
    Forsberg, Anette
    Cortellessa, Gabriella
    Fracasso, Francesca
    Turno, Marcello
    Gutierrez, Carlos
    Perez, Ana I.
    Nilsson, Malin
    Fredriksson, Carin
    Intermediate Evaluation Report for the project GiraffPlus2013Report (Other academic)
    Abstract [en]

    This delivery, halfway through the project, proves that six test sites are established with the intermediate GiraffPlus system installed and running. Hence, the project has succeeded in taking the system out of the laboratory into real life settings. The delivery includes basic reasoning on methodology and selection of test sites and test persons. A full description of every test site, its social network and technical installations are included with detailed reports on activities monitored based on personalized needs. Results that have been obtained during the first steps will be integrated in an updated version in January 2014. The preliminary result point to a positive attitude to adopt the system among both primary and secondary users. The expectations that the system will facilitate social contacts and detecting health deterioration at an early stage i.e. preventing problems to get worse, seems to be confirmed in the primary result from the follow up evaluation.

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