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  • 1. Aaditya, V. B.
    et al.
    Bharathesh, B. M.
    KTH.
    Harshitha, R.
    Chaluvaraju, B. V.
    Raghavendra, U. P.
    Murugendrappa, M. V.
    Study of dielectric properties of polypyrrole/titanium dioxide and polypyrrole/titanium dioxide-MWCNT nano composites2018Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 29, nr 4, s. 2848-2859Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The polypyrrole/titanium dioxide nano composites and polypyrrole/titanium dioxide-MWCNT nano composites were synthesized by chemical polymerization technique in the presence of an ammonium persulphate (oxidizing agent). Different concentrations viz. 15, 30, 45 and 60 wt% of titanium dioxide (TiO2) as well as mixture of TiO2-MWCNT in polypyrrole (PPy) respectively were used in the present study. The nano composites have almost spherical type shaped particles which have cluster formation as confirmed from SEM photos. The XRD graphs reveal that the PPy/TiO2 (PT) nano composites have shown the semi-crystalline nature and also, the graphs indicate the changeover of the structure of PPy/TiO2-MWCNT (PTM) nano composites from amorphous to semi-crystalline nature. From the FTIR figures, shift in wavenumber towards lower side is noticed in the case of PT and PTM nano composites when compared to PPy. The dielectric properties such as dielectric constant, dielectric loss and tangent loss have shown good behavior. This reveals that, the TiO2 as well as mixture of TiO2-MWCNT particles have shown strong dependence on PPy and helps to form good composites. So, the nano composites are good dielectric materials.

  • 2. Akbar, F.
    et al.
    Kolahdouz, M.
    Larimian, Sh.
    Radfar, B.
    Radamson, Henry
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Graphene synthesis, characterization and its applications in nanophotonics, nanoelectronics, and nanosensing2015Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 26, nr 7, s. 4347-4379Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In the last decade, as semiconductor industry was approaching the end of the exponential Moore's roadmap for device downscaling, the necessity of finding new candidate materials has forced many research groups to explore many different types of non-conventional materials. Among them, graphene, CNTs and organic conductors are the most successful alternatives. Finding a material with metallic properties combined with field effect characteristics on nanoscale level has been always a dream to continue the ever-shrinking road of the nanoelectronics. Due to its fantastic features such as high mobility, optical transparency, room temperature quantum Hall effect, mechanical stiffness, etc. the atomically thin carbon layer, graphene, has attracted the industry's attention not only in the micro-, nano-, and opto-electronics but also in biotechnology. This paper reviews the basics and previous works on graphene technology and its developments. Compatibility of this material with Si processing technology is its crucial characteristic for mass production. This study also reviews the physical and electrical properties of graphene as a building block for other carbon allotropes. Different growth methods and a wide range of graphene's applications will be discussed and compared. A brief comparison on the performance result of different types of devices has also been presented. Until now, the main focus of research has been on the background physics and its application in electronic devices. But, according to the recent works on its applications in photonics and optoelectronics, where it benefits from the combination of its unique optical and electronic properties, even without a bandgap, this material enables ultrawide-band tunability. Here in this article we review different applications and graphene's advantages and drawbacks will be mentioned to conclude at the end.

  • 3.
    Anghel, Clara
    et al.
    KTH, Skolan för industriell teknik och management (ITM), Materialvetenskap.
    Dong, Qian
    KTH, Skolan för industriell teknik och management (ITM), Materialvetenskap.
    A gas phase analysis technique applied to in-situ studies of gas-solid interactions2007Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 47, nr 10, s. 3440-3453Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    An ultrahigh vacuum technique using mass spectrometry for in-situ investigations of gas-solid interactions is described in this paper. Examples of chemical reactions (oxidation, hydration) between solids and gas mixtures, dissociation of gases on solid surfaces, outgassing of solid materials and permeation of gases through membranes are discussed where the experimental arrangement is explained in detail. This Gas Phase Analysis (GPA) technique can be used at temperatures from room temperature to 1200 degrees C and at pressures up to 1 atm. Aspects related to sample preparation, isotopic gas mixture selection, data acquisition, calibration and interpretation of the experimental data are also addressed.

  • 4. Dong, H.
    et al.
    Zhao, Zhe
    KTH, Skolan för industriell teknik och management (ITM), Materialvetenskap. School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 201418, China.
    Wang, C.
    Effect of powder characteristics on the thermal conductivity and mechanical properties of Si 3 N 4 ceramics sintered by Spark plasma sintering2019Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 30, nr 8, s. 7590-7599Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The effect of powder characteristics on the thermal conductivity and mechanical properties of silicon nitride (Si 3 N 4 ) ceramics were investigated systematically by using two α-Si 3 N 4 powders as raw materials and using MgSiN 2 or MgO + Y 2 O 3 as sintering additives. The Si 3 N 4 ceramics with a higher density were obtained by α-Si 3 N 4 powders with lower oxygen content and impurities and using none-oxide sintering additive MgSiN 2 . The α–β phase transformation completely taken place in all the specimen at 1750 °C. The specimens sintered by powders with lower levels of oxygen and impurities show higher mechanical properties than other specimens. The Y 2 O 3 and MgO sintering additives lead to higher flexural strength and fracture toughness than MgSiN 2 . The Vickers’ hardness is just the opposite. The thermal conductivity value of powders with lower oxygen content is higher than that of the materials prepared by the other type of powder at the same conditions. The effects of the Si 3 N 4 particle size, native oxygen and impurities on the thermal conductivity of resultant materials were discussed in detail. This work demonstrates that the improvement in thermal conductivity of Si 3 N 4 can be obtained by using none-oxide sintering additive MgSiN 2 and the Si 3 N 4 powder with lower oxygen content, and impurities.

  • 5. Efavi, J K
    et al.
    Mollenhauer, T
    Wahlbrink, T
    Gottlob, H D B
    Lemme, Max C.
    AMO GmbH, AMICA, Aachen, Germany.
    Kurz, H
    Tungsten work function engineering for dual metal gate nano-CMOS2005Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 16, nr 7, s. 433-436Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    A buffer layer technology for work function engineering of tungsten for dual metal gate Nano-CMOS is investigated. For the first time, tungsten is used as a p-type gate material using 1 nm of sputtered Aluminum Nitride (AlNx) as a buffer layer on silicon dioxide (SiO2) gate dielectric. A tungsten work function of 5.12 eV is realized using this technology in contrast to a mid-gap value of 4.6 eV without a buffer layer. Device characteristics of a p-MOSFET on silicon-on-insulator (SOI) substrate fabricated with this technology are presented.

  • 6.
    Ghandi, Reza
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
    Kolahdouz, Mohammadreza
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
    Hållstedt, Julius
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
    Lu, Jun
    Wise, R.
    Wejtmans, H.
    Östling, Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
    Radamson, Henry H.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
    High boron incorporation in selective epitaxial growth of SiGe layers2007Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 18, nr 7, s. 747-751Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Incorporation of high amount of boron in the range of 1 x 10(20)-1 x 10(21) cm(-3) in selective epitaxial growth (SEG) of Si1-xGex (x = 0.15-0.315) layers for recessed or elevated source/drain junctions in CMOS has been studied. The effect of high boron doping on growth rate, Ge content and appearance of defect in the epi-layers was investigated. In this study, integration issues were oriented towards having high layer quality whereas still high amount of boron is implemented and the selectivity of the epitaxy is preserved.

  • 7. Harshitha, R.
    et al.
    Aaditya, V. B.
    Bharathesh, Badadamath
    KTH.
    Chaluvaraju, B. V.
    Raghavendra, U. P.
    Murugendrappa, M. V.
    Studies of thermo-electric power and dielectric modulus of polypyrrole/zirconium oxide-molybdenum trioxide (PZM) composites2018Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 29, nr 8, s. 6564-6578Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Zirconium oxide-molybdenum trioxide doped polypyrrole composites have been synthesized in the presence of ammonium persulphate (oxidizing agent), with different 15, 30, 45 and 60 wt% of zirconium oxide-molybdenum trioxide (ZM) in pyrrole, by the chemical polymerization (oxidation) process. The polypyrrole/zirconium oxide-molybdenum trioxide (PZM) composites have exhibited crystalline nature, which has been confirmed by powder X-ray diffraction patterns. The Fourier transform infrared graphs show that the stretching frequencies of the composites have shifted towards the lower frequency side. The scanning electron microscopy micrographs indicate that the composites are of spherical nature and form elongated chains; an increase in the particles size when compared with polypyrrole and ZM particles is also observed. Thermo electric power and transport properties studies reveal that there is an interaction between polypyrrole and the ZM particles and the weight percents of the ZM particles have an influence on the properties of the pure polypyrrole. Studies shown that, the PZM composites are good materials in conductivity, dielectric properties, micro power generator, thermo cooling, as semiconductors as well as may be in humidity, gas and thermal sensor.

  • 8. Kermaniha, M.
    et al.
    Kolahdouz, M.
    Manavizadeh, N.
    Aghababa, H.
    Elahi, M.
    Iraj, M.
    Asl-Soleimani, E.
    Radamson, Henry H.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Systematic optimization of phosphorous diffusion for solar cell application2016Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 27, nr 12, s. 13086-13092Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Fossil fuel storage is running low and scientists around the globe are involved in a big search for an optimized substitute. Photovoltaic is one of the most likely alternatives to solve this issue and replace the fossil fuels. Among all types of cells, silicon solar cells are the most economical ones to produce affordable energy. In this paper, a systematic study was done on the diffusion of phosphorous in multi-crystalline silicon during solar cell emitter formation. All parameters involved in the conversion of a multi-crystalline p-type silicon to a p-n junction were analyzed quantitatively. This systematic approach predicts the effect of inputs on the outputs which decreases the number of the trail runs. The analysis result indicate, that raising the diffusion temperature from 830 to 880 A degrees C decreases the sheet resistance by -100 Omega/sq, and increasing POCl3 flow from 300 to 500 SCCM has an effect of -21 Omega/sq.

  • 9.
    Li, Zhicheng
    et al.
    KTH, Tidigare Institutioner, Materialvetenskap.
    Smuk, Lena
    KTH, Tidigare Institutioner, Materialvetenskap.
    Bergman, Bill
    KTH, Tidigare Institutioner, Materialvetenskap.
    Influence of AST additives on the stability of PTCR characteristics and microstructure in ferroelectric ceramics2004Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 15, nr 8, s. 561-567Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    (Ba0.69Pb0.31)TiO3 ceramics were prepared using Al2O3, SiO2, additives and excess of TiO2 (AST). The characteristics of positive temperature coefficient of resistivity (PTCR) was studied and the corresponding microstructures were investigated using atomic force microscopy and scanning electron microscopy. The results showed that the PTCR effect was related to the AST additives. The maximum value of resistivity in the ceramics with lower content of or without Al2O3 and SiO2 additives was much lower than in those with AST additives. Ceramics with low AST content, which were heated by electric field to a temperature much higher than their Curie temperature, lost the PTCR effect after the electric field stimulation. The microstructure observations revealed that re-crystallization took place in the ceramics with lower content of or without AST additives resulting in the loss of the PTCR effect.

  • 10.
    Li, Zhicheng
    et al.
    KTH, Tidigare Institutioner, Materialvetenskap.
    Zhang, H.
    Bergman, Bill
    KTH, Tidigare Institutioner, Materialvetenskap.
    Microstructure and PTCR effect of La-doped BaPbO3 ceramics2004Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 15, nr 3, s. 183-186Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    La-doped BaPbO3 ceramics were prepared by using BaCO3 and PbO. Electrical properties and microstructure of the ceramics were studied. The results show a thin surface layer with a very low resistivity, and the interior of the ceramics with the characteristics of positive temperature coefficient of resistivity (PTCR). The PTCR behavior was related to the La content. The investigation by scanning electron microscopy and transmission electron microscopy revealed that the low resistivity of the surface layer was due to formation of a nano-size BaPbO3 phase with metallic properties.

  • 11. Matindoust, Samaneh
    et al.
    Farzi, Ali
    Nejad, Majid Baghaei
    Abadi, Mohammad Hadi Shahrokh
    Zou, Zhuo
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Zheng, Li-Rong
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
    Ammonia gas sensor based on flexible polyaniline films for rapid detection of spoilage in protein-rich foods2017Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 28, nr 11, s. 7760-7768Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    This work details the fabrication and performance of a sensor for ammonia gas, based on conducting polymer. The fabrication procedure consists following steps; polyaniline synthesis via oxidative polymerization technique, then a sensitive polyaniline film was deposited on a printed circuit board and finally, polyaniline microdevice were assembled on an interdigitated electrode arrays to fabricate the sensor for amomonia gas detection. Response time of this chemiresistive devices and humidity impact were examined for NH3 sensitivity and compared with commercial gas sensors (Taguchi Model 826). Data export from sensor to the computer was carried out via data logger model ADC-24 and analyzed using SPSS software. The sensor was found to have a rapid (t = 40 s) and stable linear response to ammonia gas in the concentration range of interest (50-150 ppm) under room temperature operation condition. It was reviled also reliable results to the variation of environment humidity. Power consumption, sensitivity, dimension, flexibility and fabrication cost were used as most important parameters to compare the new polymer based device with those of other similar works and the results showed that small size, low cost, flexibility, low power consumption and high sensitivity are from the benefits of this innovative device. In real-time application conditions flexible polyaniline based gas sensor with polyimide substrate in thickness 0.25 mm exhibits relatively good performance and accurate evaluation of food spoilage.

  • 12.
    Radamson, Henry H.
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Kolahdouz, Mohammadreza
    Selective epitaxy growth of Si1-xGex layers for MOSFETs and FinFETs2015Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 26, nr 7, s. 4584-4603Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    This article reviews the selective epitaxy growth of intrinsic, B- and C-doped SiGe layers on recessed (or flat) exposed Si areas for MOSFETs as well as on Si-fins for FinFETs. A detailed empirical model for the growth, integration issues including epitaxy quality, selectivity, dopant incorporation, and pattern dependency (or loading effect) is presented.

  • 13. Sheykhifard, Z.
    et al.
    Mohseni, S. Majid
    Tork, B.
    Hajiali, M. R.
    Jamilpanah, L.
    Rahmati, B.
    Haddadi, F.
    Hamdi, M.
    Mohseni, S. Morteza
    Mohammadbeigi, M.
    Ghaderi, A.
    Erfanifam, S.
    Dashtdar, M.
    Feghhi, F.
    Ansari, N.
    Pakdel, S.
    Pourfath, M.
    Hosseinzadegan, A.
    Bahreini, M.
    Tavassoli, S. H.
    Ranjbar, M.
    Banuazizi, Seyed Amir Hossein
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik.
    Chung, Sunjae
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik. Göteborgs University, Sweden.
    Åkerman, Johan
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik. Göteborgs University, Sweden.
    Nikkam, N.
    Sohrabi, A.
    Roozmeh, S. E.
    Magnetic graphene/Ni-nano-crystal hybrid for small field magnetoresistive effect synthesized via electrochemical exfoliation/deposition technique2018Inngår i: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 29, nr 5, s. 4171-4178Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Two-dimensional heterostructures of graphene (Gr) and metal/semiconducting elements convey new direction in electronic devices. They can be useful for spintronics because of small spin orbit interaction of Gr as a non-magnetic metal host with promising electrochemical stability. In this paper, we demonstrate one-step fabrication of magnetic Ni-particles entrapped within Gr-flakes based on simultaneous electrochemical exfoliation/deposition procedure by two-electrode system using platinum as the cathode electrode and a graphite foil as the anode electrode. The final product is an air stable hybrid element including Gr flakes hosting magnetic Ni-nano-crystals showing superparamagnetic-like response and room temperature giant magnetoresistance (GMR) effect at small magnetic field range. The GMR effect is originated from spin scattering through ferromagnetic/non-magnetic nature of Ni/Gr heterostructure and interpreted based on a phenomenological spin transport model. Our work benefits from XRD, XPS, Raman, TEM, FTIR and VSM measurements We addressed that how our results can be used for rapid manufacturing of magnetic Gr for low field magneto resistive elements and potential printed spintronic devices.

1 - 13 of 13
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