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  • 101.
    Metaferia, Wondwosen
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Tommila, J.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Sun, Yanting
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Guina, M.
    Niemi, T.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Selective area heteroepitaxy of InP nanopyramidal frusta on Si for nanophotonics2013In: Indium Phosphide and Related Materials (IPRM), 2012 International Conference on, IEEE , 2013, p. 81-84Conference paper (Refereed)
    Abstract [en]

    InP nanopyramidal frusta on InP and InP precoated Si substrates were grown selectively from nano-imprinted circular openings in silicon dioxide mask using a low pressure hydride vapor phase epitaxy reactor. The grown InP nanopyramidal frusta, octagonal in shape, were characterized by Atomic Force Microscopy, Scanning Electron Microscopy and Photoluminescence. The growth is extremely selective and uniform over the entire patterned area on both substrates. The measured diagonal of the top surface is 30 nm and 90 nm for the nanopyramidal frusta grown from 120 nm and 300 nm diameter openings, respectively. The size and morphology as well as the optical quality of these pyramidal frusta make them suitable templates for quantum dot structures for nano photonics and silicon photonics.

  • 102.
    Nagarajan, Mony
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Sudhakar, S.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Baskar, K.
    Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization2011In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 314, no 1, p. 119-122Article in journal (Refereed)
    Abstract [en]

    Zn3As2 epitaxial layers were grown on GaAs (1 0 0) substrates by liquid phase epitaxy (LPE) using Ga as the solvent. Zinc mole fraction in the growth melt was varied from 1.07 x 10(-2) to 6 x 10(-2). X-ray diffraction spectrum exhibits a sharp peak at 43.3 degrees characteristic of Zn3As2 crystalline layer. The peak intensity increases with increase in zinc mole fraction in the growth melt. The compositions of the as-grown Zn3As2 layers were confirmed by energy dispersive X-ray (EDX) analysis. Surface morphology was studied using scanning electron microscopy (SEM) and the thickness of the epilayers was also determined. The Hall measurements at 300 K indicate that Zn3As2 epilayers are unintentionally p-doped. With an increase of zinc mole fraction in the growth melt, carrier concentration increases and carrier mobility decreases. Infrared optical absorption spectroscopy showed a sharp absorption edge at 1.0 eV corresponding to the reported band gap of Zn3As2. (C) 2010 Elsevier B.V. All rights reserved.

  • 103.
    Olsson, Fredrik
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Aubert, Amandine
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Avella, M.
    Jiménez, J.
    Barrios, C. A.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Heteroepitaxy of InP on Silicon-on-Insulator for Optoelectronic Integration2007In: ECS Transactions, ISSN 1938-5862, Vol. 3, no 39, p. 23-29Article in journal (Refereed)
    Abstract [en]

    Epitaxial lateral overgrowth of InP was performed on patterned silicon-on-insulator (SOI) and compared with that on Si substrates in a low pressure hydride vapor phase epitaxy system. The InP was characterized by cathodoluminescence. No red shift of peak wavelength was detected for InP/SOI indicating a negligible thermal strain. Additional low energy peaks were found in some regions with a granular structure on the SOI template. A subsequent growth of an InGaAsP/InP MQW (multi quantum well) structure (λ∼1.5 μm) was grown on the SOI template and on a planar InP reference sample by metal-organic phase epitaxy. The MQW was characterized by room temperature photoluminescence. A red shift of 35 nm with respect to the reference sample was attributed to the selective-area effect causing thicker wells and/or an increased indium content. Although the PL intensity was weaker than that obtained for the reference, the FWHMs were comparable.

  • 104.
    Olsson, Fredrik
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Mion, Gaël
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Sun, YanTing
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Sundgren, Petrus
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Baskar, Krishnan
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Armani, N.
    Hammar, Mattias
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Selective area growth of GaInNAs/GaAs by MOVPE2004In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 23, no 04-mar, p. 347-351Article in journal (Refereed)
    Abstract [en]

    Selective area growth (SAG) of GaInNAs/GaAs systems has been studied by metalorganic vapor-phase epitaxy (MOVPE) for the first time. This also includes a comparative study of SAG of the GaInAs/GaAs. The patterns consisted of various filling factors (F). The band gap changes and the growth morphology have been investigated. A red-shift observed for SAG GaInAs is similar to100 nm with respect to the planar GaInAs which can be attributed to both In enrichment and quantum well (QW) thickness enhancement. Selectively grown GaInNAs structures exhibit a maximum wavelength of 1.3 mum, corresponding to a red-shift of similar to80 nm with respect to the planar GaInNAs. Atomic force microscopy (AFM) scans reveal a three-dimensional growth behaviour for SAG GaInNAs unlike SAG GaInAs. This can be related to a certain amount of phase separation or strain that are often the signatures of N incorporation. The cathodoluminescence (CL) intensities (spectral line width) for SAG GaInNAs are larger (smaller) than those for SAG GaInAs at low F's but smaller (larger) at high F's. This indicates that at low F's, GaInAs has degraded due to very high strain but certain amount of strain compensation occurs in GaInNAs.

  • 105.
    Olsson, Fredrik
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Xie, Mengyao
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Gerard, F.
    Instituto de Microelectronica de Madrid (CSIC).
    Alija, A. R.
    Instituto de Microelectronica de Madrid (CSIC).
    Prieto, I.
    Instituto de Microelectronica de Madrid (CSIC).
    Postigo, P. A.
    Instituto de Microelectronica de Madrid (CSIC).
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Epitaxial lateral overgrowth of InP in micro line and submicro mesh openings2007In: 2007 International Conference on Indium Phosphide and Related Materials, 2007, p. 311-314Conference paper (Refereed)
    Abstract [en]

    Towards achieving a large area of InP on silicon, a study of ELOG of InP on InP has been undertaken on lines with different orientations and with openings that are 100 mu m long and 10 gm wide. This knowledge has been transposed on sub-micro mesh structures. By this method we have obtained 2 gm thick InP on a mesh patterned InP. The layer exhibits room temperature photoluminescence (PL) with a full width half maximum of 24 nm. We propose that this intensity can be increased if nano-sized openings are used.

  • 106.
    Olsson, Fredrik
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Xie, Mengyao
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Prieto, I.
    Instituto de Microelectrónica de Madrid, Centro Nacional de Microelectrónica (IMM-CNM-CSIC).
    Postigo, P. A.
    Instituto de Microelectrónica de Madrid, Centro Nacional de Microelectrónica (IMM-CNM-CSIC).
    Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experemintal indication for defect filtering throughout the grown layer2008In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 104, no 9, p. 093112-1-093112-6Article in journal (Refereed)
    Abstract [en]

    We present a model for the filtration of dislocations inside the seed window in epitaxial lateral overgrowth (ELO). We found that, when the additive effects of image and gliding forces exceed the defect line tension force, filtering can occur even in the openings. The model is applied to ELO of InP on Si where the opening size and the thermal stress arising due to the mask and the grown material are taken into account and analyzed. Further, we have also designed the mask patterns in net structures, where the tilting angles of the openings in the nets are chosen in order to take advantage of the filtering in the openings more effectively, and to minimize new defects due to coalescence in the ELO. Photoluminescence intensities of ELO InP on Si and on InP are compared and found to be in qualitative agreement with the model.

  • 107.
    Olsson, Fredrik
    et al.
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Xie, Mengyao
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Marcinkevicius, Saulius
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Optics.
    Gerard, F.
    Alija, A. R.
    Prieto, I.
    Postigo, P. A.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Time resolved photoluminescence and transmission electron microscopy studies on nano InP grown on silicon by nano epitaxial lateral overgrowthManuscript (Other academic)
  • 108.
    Olsson, Fredrik
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Zhu, Tiankai
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Mion, Gaël
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Large mask area effects in selective area growth2006In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 289, no 1, p. 24-30Article in journal (Refereed)
    Abstract [en]

    In this paper we analyze for the first time selective area growth (SAG) of GaAs by MOVPE on dark field patterns, where the different masking features are dense and at the same time the openings are surrounded by very large mask area (larger than the openings) in all directions. The growth efficiency as a function of filling factors is analyzed using one- and two-dimensional filling factors. That the SAG efficiency cannot be greater than one is found to be true, if a two-dimensional filling factor is employed; this treatment involves three-dimensional transport of the growth rendering species. Finite element method has been used to derive the longitudinal thickness profile in the openings by considering the three-dimensional model. The derived longitudinal thickness profile is found to fit very well with the experimentally measured profile. The diffusion length of the growth rendering species is also extracted from the above profile. For comparison, light field patterns are also treated. Our analysis confirms many previous observations that SAG in the light field patterns can be sufficiently explained by the two-dimensional model.

  • 109.
    Omanakuttan, Giriprasanth
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Martinez Sacristan, Oscar
    Univ Valladolid, Dept Fis Mat Condensada, GdS Optronlab Grp, Edificio LUCIA,Paseo Belen 19, Valladolid 47011, Spain..
    Marcinkevičius, Saulius
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Uzdavinys, Tomas Kristijonas
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Jimenez, Juan
    Univ Valladolid, Dept Fis Mat Condensada, GdS Optronlab Grp, Edificio LUCIA,Paseo Belen 19, Valladolid 47011, Spain..
    Ali, Hasan
    Uppsala Univ, Dept Engn Sci, Appl Mat Sci, Box 534, S-75121 Uppsala, Sweden..
    Leifer, Klaus
    Uppsala Univ, Dept Engn Sci, Appl Mat Sci, Box 534, S-75121 Uppsala, Sweden..
    Lourdudoss, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Sun, Yan-Ting
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth2019In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 9, no 3, p. 1488-1500Article in journal (Refereed)
    Abstract [en]

    We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

  • 110.
    Omanakuttan, Giriprasanth
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Stergiakis, Stamoulis
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Sahgal, Abhishek
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Sychugov, Ilya
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Sun, Yan-Ting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Epitaxial lateral overgrowth of GaxIn1-xP toward direct GaxIn1-xP/Si heterojunction2017In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 214, no 3Article in journal (Refereed)
    Abstract [en]

    The growth of GaInP by hydride vapor phase epitaxy (HVPE) was studied on planar GaAs, patterned GaAs for epitaxial lateral overgrowth (ELOG), and InP/Si seed templates for corrugated epitaxial lateral overgrowth (CELOG). First results on the growth of direct GaInP/Si heterojunction by CELOG is presented. The properties of GaxIn(1-x)P layer and their dependence on the process parameters were investigated by X-ray diffraction, including reciprocal lattice mapping (XRD-RLM), scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy (SEM-EDS), photoluminescence (PL), and Raman spectroscopy. The fluctuation of Ga composition in the GaxIn(1-x)P layer was observed on planar substrate, and the strain caused by the composition variation is retained until relaxation occurs. Fully relaxed GaInP layers were obtained by ELOG and CELOG. Raman spectroscopy reveals that there is a certain amount of ordering in all of the layers except those grown at high temperatures. Orientation dependent Ga incorporation in the CELOG, but not in the ELOG GaxIn(1-x)P layer, and Si incorporation in the vicinity of direct GaxIn(1-x)P/Si heterojunction from CELOG are observed in the SEM-EDS analyses. The high optical quality of direct GaInP/Si heterojunction was observed by cross-sectional micro-PL mapping and the defect reduction effect of CELOG was revealed by high PL intensity in GaInP above Si.

  • 111.
    Omanakuttan, Giriprasanth
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Stergiakis, Stamoulis
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Sahgal, Abhishek
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Sychugov, Ilya
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Sun, Yan-Ting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Epitaxial lateral overgrowth of GaxIn1-xP towards coherent GaxIn1-xP/Si heterojunction by hydride vapor phase epitaxy2016In: 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, IEEE, 2016Conference paper (Refereed)
    Abstract [en]

    Epitaxial lateral overgrowth (ELOG) of GaInP on GaAs by hydride vapor phase epitaxy (HVPE) is carried out as a pre-study to obtain GaInP/Si heterointerface. We present first results on the growth of GaInP/Si by a modified ELOG technique, corrugated epitaxial lateral overgrowth (CELOG).

  • 112.
    Omanakuttan, Giriprasanth
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Sun, Yan-Ting
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Reuterskiöld-Hedlund, Carl
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Junesand, Carl
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Schatz, Richard
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Lourdudoss, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Paillard, Valerie
    Almae Technologies.
    Lelarge, François
    Almae Technologies.
    Browne, Jack
    Tyndall National Institute.
    Justice, John
    Tyndall National Institute.
    Corbett, Brian
    Tyndall National Institute.
    Electrically pumped 1.5 μm gain material on InP/SiManuscript (preprint) (Other academic)
  • 113.
    Ougazzaden, A.
    et al.
    Georgia Institute of Technology.
    Gautier, S.
    Université de Metz and SUPELEC.
    Aggerstam, Thomas
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Martin, J.
    Université de Metz and SUPELEC.
    Bouchaour, M.
    Université de Metz and SUPELEC.
    Baghdadli, T.
    Université de Metz and SUPELEC.
    Saad, S. Ould
    Georgia Tech-CNRS.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Maloufi, N.
    Laboratoire d’Etude des Textures et Application aux Matériaux, Metz.
    Djebbour, Z.
    Laboratoire de Génie Electrique de Paris.
    Jomard, F.
    Laboratoire de Physique des Solides et de Cristallogénèse, Université de Versailles-Saint-Quentin.
    Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications2007In: Quantum Sensing and Nanophotonic Devices IV / [ed] Razeghi M; Brown GJ, 2007, Vol. 6479, p. G4791-G4791Conference paper (Refereed)
    Abstract [en]

    The development of wide band gap semiconductors extends their applications in optoelectronics devices to the UV domain. Compact lasers and high sensitivity APD detectors in UV range are currently needed for different applications such as, purification, covert communication and real time detection of airborne pathogens. Until now, the full exploitation of these potential materials has been limited by the lack of suitable GaN substrates. Recently, a novel class of materials has been reported based on BGaN and BAlN, potentially reducing the crystal defect densities by orders of magnitude compared to existing wide band gap heterostructures. Characteristics of these new alloys are similar to those of AlGaN materials with the advantage that these can be lattice matched to AlN and SiC substrates. In addition, these materials offer the possibility of using quaternary BAlGaN alloys at Ultra Violet (UV) wavelengths and hence lead to more degrees of freedom in designing sophisticated device structures. In this paper we describe the MOVPE growth conditions used to incorporate boron in GaN and AlGaN. Detailed characterization and analysis in terms of structural and electrical properties are discussed.

  • 114.
    Pang, Xiaodan
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Communication Systems, CoS, Optical Network Laboratory (ON Lab).
    Ozolins, O.
    Zhang, L.
    Schatz, Richard
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Udalcovs, A.
    Storck, Joakim
    KTH.
    Maisons, G.
    Carras, M.
    Xiao, S.
    Jacobsen, G.
    Popov, Sergei
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Chen, Jiajia
    KTH, School of Electrical Engineering and Computer Science (EECS), Communication Systems, CoS, Optical Network Laboratory (ON Lab).
    Lourdudoss, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    4 Gbps PAM-4 and DMT Free Space Transmission using a 4.65-pm Quantum Cascaded Laser at Room Temperature2017In: European Conference on Optical Communication, ECOC, Institute of Electrical and Electronics Engineers Inc. , 2017, p. 1-3Conference paper (Refereed)
    Abstract [en]

    We experimentally demonstrate 4Gbps PAM-4 and DMT transmissions using a quantum cascaded laser (QCL) emitting at mid-wavelength infrared of 4.65μm and a commercial infrared photovoltaic detector. The QCL is directly modulated and operated at room temperature with Peltier Cooling. 

  • 115.
    Pang, Xiaodan
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Communication Systems, CoS, Optical Network Laboratory (ON Lab).
    Ozolins, Oskars
    RISE Acreo AB, Networking & Transmiss Lab, Kista, Sweden..
    Zhang, Lu
    KTH, School of Electrical Engineering and Computer Science (EECS), Communication Systems, CoS, Optical Network Laboratory (ON Lab).
    Schatz, Richard
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Udalcovs, Aleksejs
    RISE Acreo AB, Networking & Transmiss Lab, Kista, Sweden..
    Storck, Joakim
    KTH, School of Electrical Engineering and Computer Science (EECS).
    Maisons, Gregory
    mirSense, Ctr Integrat Nanolnnov, F-91120 Palaiseau, France..
    Carras, Mathieu
    mirSense, Ctr Integrat Nanolnnov, F-91120 Palaiseau, France..
    Xiao, Shilin
    Shanghai Jiao Tong Univ, State Key Lab Adv Opt Commun Syst & Networks, Shanghai, Peoples R China..
    Jacobsen, Gunnar
    RISE Acreo AB, Networking & Transmiss Lab, Kista, Sweden..
    Popov, Sergei
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Chen, Jiajia
    KTH, School of Electrical Engineering and Computer Science (EECS), Communication Systems, CoS, Optical Network Laboratory (ON Lab).
    Lourdudoss, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    4 Gbps PAM-4 and DMT Free Space Transmission using A 4.65-mu m Quantum Cascaded Laser at Room Temperature2017In: 43RD EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC 2017), IEEE , 2017Conference paper (Refereed)
    Abstract [en]

    We experimentally demonstrate 4Gbps PAM-4 and DMT transmissions using a quantum cascaded laser (QCL) emitting at mid-wavelength infrared of 4.65-mu m and a commercial infrared photovoltaic detector. The QCL is directly modulated and operated at room temperature with Peltier Cooling.

  • 116. Parillaud, O.
    et al.
    De Naurois, G. -M
    Simozrag, B.
    Trinite, V.
    Maisons, G.
    Garcia, M.
    Gerard, B.
    Carras, M.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Sun, Yanting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Multi-regrowth steps for the realization of buried single ridge and μ-stripes quantum cascade lasers2013In: 2013 International Conference on Indium Phosphide and Related Materials (IPRM), IEEE , 2013, p. 6562597-Conference paper (Refereed)
    Abstract [en]

    We report on the realization of buried single ridge and μ-stripes quantum cascade lasers using HVPE and MOVPE regrowth steps of semi-insulating InP:Fe and Si doped layers. We present here the preliminary results obtained on these devices. The reduction of the thermal resistance achieved using semi-insulating InP:Fe for regrowth planarization and μ-stripe arrays approaches are shown and performance perspectives are addressed.

  • 117. Paskova, T.
    et al.
    Paskov, P. P.
    Darakchieva, V.
    Kroeger, R.
    Hommel, D.
    Monemar, B.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Preble, E.
    Hanser, A.
    Williams, M. N.
    Tutor, M.
    Strain-free low-defect-density bulk GaN with nonpolar orientations2006Conference paper (Refereed)
    Abstract [en]

    Bulk GaN sliced in bars along (11-20) and (1-100) planes from a boule grown in the [0001] direction by HVPE was confirmed as strain free material with a low dislocation density by using several characterization techniques. The high-structural quality of the material allows photoluminescence studies of free excitons, principal donor bound excitons and their twoelectron satellites with regard to the optical selection rules. Raman scattering study of the bulk GaN with nonpolar orientations allows a direct access to the active phonon modes and a direct determination of their strain-free positions.

  • 118. Peretti, R.
    et al.
    Liverini, V.
    Süess, M. J.
    Liang, Y.
    Vigneron, P. B.
    Wolf, J. M.
    Bonzon, C.
    Bismuto, A.
    Metaferia, W.
    Balaji, Manavaimaran
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Gini, E.
    Beck, M.
    Faist, J.
    Room temperature operation of a deep etched buried heterostructure photonic crystal quantum cascade laser2016In: Laser & Photonics reviews, ISSN 1863-8880, E-ISSN 1863-8899, Vol. 10, no 5, p. 843-848Article in journal (Refereed)
    Abstract [en]

    High power single mode quantum cascade lasers with a narrow far field are important for several applications including surgery or military countermeasure. Existing technologies suffer from drawbacks such as operation temperature and scalability. In this paper we introduce a fabrication approach that potentially solves simultaneously these remaining limitations. We demonstrate and characterize deep etched, buried photonic crystal quantum cascade lasers emitting around a wavelength of 8.5 μm. The active region was dry etched before being regrown with semi-insulating Fe:InP. This fabrication strategy results in a refractive index contrast of 10% allowing good photonic mode control, and simultaneously provides good thermal extraction during operation. Single mode emission with narrow far field pattern and peak powers up to 0.88 W at 263 K were recorded from the facet of the photonic crystal laser, and lasing operation was maintained up to room temperature. The lasing modes emitted from square photonic crystal mesas with a side length of 550μm, were identified as slow Bloch photonic crystal modes by means of three-dimensional photonic simulations and measurements. (Figure presented.).

  • 119. Peretti, R.
    et al.
    Liverini, V.
    Wolf, J.
    Bonzon, C.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Beck, M.
    Faist, J.
    Room temperature operation of a photonic crystal quantum cascade laser2015In: CLEO: Science and Innovations, IEEE conference proceedings, 2015Conference paper (Refereed)
    Abstract [en]

    We report on design, fabrication and investigation of a buried heterostructure photonic crystal quantum cascade laser operating in the mid-IR (8.5μm) at room temperature, leading to single mode emission on a 600μm by 600μm mesa.

  • 120. Radhakrishnan, K.
    et al.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Ing, Ng Geok
    Proceedings of the Third International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium J: III-V Semiconductors for Microelectronic and Optoelectronic Applications - Singapore, July 3-8, 2005 - Preface2007In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 10, p. VI-VIArticle in journal (Other academic)
  • 121. Scares, F. M.
    et al.
    Jiang, W.
    Seo, S. -W
    Baek, J. H.
    Broeke, R. G.
    Cao, J.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Ben Yoo, S. J.
    20GHz channel spacing InP-based arrayed waveguide grating2007In: 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007, IEEE conference proceedings, 2007Conference paper (Refereed)
    Abstract [en]

    We demonstrate a 10-channel InP-based Arrayed-Waveguide Grating (dimensions = 5.0×6.0 mm2) with a 20-GHz channel spacing. The excess loss of the AWG is 5.5-6.3 dB, and the crosstalk level is below -15 dB.

  • 122. Seo, S. W.
    et al.
    Soares, F. M.
    Baek, J. H.
    Jiang, W.
    Fontaine, N. K.
    Scott, R. P.
    Yang, C.
    Geisler, D. J.
    Yan, J.
    Broeke, R. G.
    Cao, J.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Pham, A. H.
    Ben Yoo, S. J.
    Monolithically integrated InP photonic micro systems on a chip for O-CDMA and OAWG applications2007In: 2007 Photonics in Switching, PS, 2007, p. 97-98Conference paper (Refereed)
    Abstract [en]

    A monolithically integrated InP chip for optical arbitrary waveform generation (OAWG) and/or pulse-coding/decoding is demonstrated using a 20-GHz AWG pair and 10 high-speed phase modulators. The fabrication and performance of the InP chip will be presented.

  • 123. Soares, F. M.
    et al.
    Fontaine, N. K.
    Wei, J.
    Seo, S. W.
    Baek, J. H.
    Broeke, R. G.
    Cao, J.
    Okamoto, K.
    Yoo, S. J. B.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Compact InP-Based 16-channel O-CDMA encoder/decoder2007In: 2007 IEEE LEOS annual meeting conference proceedings: Lake Buena Vista, FL, 21-25, October, 2007, IEEE , 2007, p. 723-724Conference paper (Refereed)
    Abstract [en]

    A very compact InP-Based 16-channel O-CDMA encoder-/decoder chip (3.8mm × 6.8mm) has been designed, fabricated and characterized. The device successfully performs O-CDMA spectral encoding.

  • 124. Soares, F. M.
    et al.
    Jiang, W.
    Fontaine, N. K.
    Seo, S. W.
    Baek, J. H.
    Broeke, R. G.
    Cao, J.
    Okamoto, K.
    Olsson, Fredrik E.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Yoo, S. J. B.
    InP-based arrayed-waveguide grating with a channel spacing of 10 GHz2008In: OFC/NFOEC - Conf. Opt. Fiber Commun./Natl. Fiber Opt. Eng. Conf., 2008, p. -69Conference paper (Refereed)
    Abstract [en]

    We realize a high-precision 10-channel InP-based Arrayed-Waveguide Grating (AWG) with a 10-GHz channel spacing. The AWG showed approximately 10dB excess-loss, 10 dB crosstalk, and 8.2 × 6.8 mm2 dimensions.

  • 125. Soares, Francisco M.
    et al.
    Baek, J. H.
    Zhou, X.
    Wang, Y.
    Scott, Ryan P.
    Heritage, J. P.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Liou, K. Y.
    Hamm, R. A.
    Wang, W.
    Patel, B.
    Vatanapradit, S.
    Gruezke, L. A.
    Tsang, W. T.
    Yoo, S. J. B.
    Monolithically integrated InP wafer-scale 100-channel × 10-GHz AWG and Michelson interferometers for 1-THz-bandwidth optical arbitrary waveform generation2010In: 2010 Conference on Optical Fiber Communication, Collocated National Fiber Optic Engineers Conference, OFC/NFOEC 2010, 2010, p. 5465526-Conference paper (Refereed)
    Abstract [en]

    We discuss monolithic integration of a 100-channel AWG with a 10-GHz channel spacing with 100 Michelson-interferometer-based phase- and amplitude-modulators. The AWG showed approximately 10 dB crosstalk, and the twin-integrated devices comprise a 2" InP wafer.

  • 126. Soares, Francisco M.
    et al.
    Fontaine, Nicolas K.
    Scott, Ryan P.
    Baek, J. H.
    Zhou, X.
    Su, T.
    Cheung, S.
    Wang, Y.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Liou, K. Y.
    Hamm, R. A.
    Wang, W.
    Patel, B.
    Gruezke, L. A.
    Tsang, W. T.
    Heritage, Jonathan P.
    Yoo, S. J. B.
    Monolithic InP 100-Channel X 10-GHz Device for Optical Arbitrary Waveform Generation2011In: IEEE Photonics Journal, ISSN 1097-5764, E-ISSN 1943-0655, Vol. 3, no 6, p. 975-985Article in journal (Refereed)
    Abstract [en]

    We demonstrate monolithic integration of a 100-channel arrayed-waveguide grating (AWG) with 10-GHz channel spacing and 100 optically controlled Michelson-interferometer-based phase and amplitude modulators. The high-resolution AWG showed better than -15-dB crosstalk, and the modulator extinction ratio was better than 20 dB with either electrical or optical modulation control. The twin-integrated devices comprise a 50-mm diameter InP wafer with 1200 independent optoelectronic components.

  • 127. Soderstrom, D.
    et al.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Resistivity analysis on n-semi-insulating-n and p-semi-insulating-p structures exemplified with semi-insulating InP2001In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 89, no 7, p. 4004-4009Article in journal (Refereed)
    Abstract [en]

    Current-voltage characteristic in semi-insulating (SI) InP layers sandwiched between n- or p-type layers have been simulated. Deep acceptor and deep donor levels were considered. A one-dimensional two-carrier numerical model was used, which takes into account carrier diffusion and Shockley-Read-Hall recombination through the deep traps. The current-voltage behavior is studied in the linear ohmic regime in order to deduce the resistivity, which is analyzed and compared to values obtained from equilibrium calculations. The simulations predict an increased resistivity for n-SI-n and a decreased resistivity for p-SI-p structures, while increasing the concentration of deep acceptors. Furthermore, a maximum in the resistivity as a function of the trap concentration is found for an n-SI-n structure, which accommodates electron injection. In addition, the influence of the position of the deep acceptor in the band gap on the resistivity is analyzed, and it is shown that it significantly affects the behavior when comparing n-SI-n and p-SI-p structures. Incorporating a deep donor level along with a deep acceptor level will improve the SI behavior of the p-SI-p structure, whereas a slight drop in resistivity occurs for the n-SI-n structure. Our predicted electrical behavior from simulation is found to be in accordance with the previously published experimental results in InP:Fe and InP:Fe,Ti.

  • 128. Soderstrom, D.
    et al.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Dadgar, A.
    Stenzel, O.
    Bimberg, D.
    Schumann, H.
    Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe2001In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 30, no 8, p. 972-976Article in journal (Refereed)
    Abstract [en]

    Semi-insulating Fe and Ru codoped InP epitaxial layers grown by low-pressure hydride vapor phase epitaxy have been investigated. InP:Ru and InP:Fe,Ru layers were grown on p-InP:Zn and n-InP:S substrates, in order to study dopant diffusion and electrical characteristics. Dopant diffusion profiles of Ru, Fe and Zn were measured by secondary ion mass spectroscopy. A small but noteworthy diffusion front is observed when InP:Ru is adjacent to InP:Zn, but not when adjacent to n-InP. For InP:Fe codoped with Ru a pronounced interdiffusion of Fe and Zn is observed for Ru concentrations less than 2 X 10(17) cm(-3), but, for a higher Ru concentration the interdiffusion is clearly suppressed. Moreover, when InP is codoped with Fe and Ru, the small diffusion tail of Ru in InP:Zn vanishes. Unlike InP:Fe, resistivities above 1 X 10(8) Ohm cm are measured for both electron and hole-current injection in InP:Fe,Ru.

  • 129. Soderstrom, D.
    et al.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Wallnas, M.
    Dadgar, A.
    Stenzel, O.
    Bimberg, D.
    Schumann, H.
    Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy2001In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 4, no 6, p. G53-G55Article in journal (Refereed)
    Abstract [en]

    Epitaxial layers of ruthenium-doped InP grown by low-pressure hydride vapor phase epitaxy have been studied. Current voltage measurements were conducted at temperatures between 20 and 200 degreesC for samples doped with Ru in the range 1 x 10(17) to 5 X 10(17) cm(-3). In this doping range, the specific resistivity of n(+)/InP:Ru/n(+) structures accommodating electron injection is less than or equal to1 x 10(4) Ohm cm and that of p(+)/InP:Ru/p(+) structures accommodating hole injection is as high as 3 x 10(10) Ohm cm. The reason for such a huge difference in the resistivity of these structures is attributed to a low activation of deep Ru acceptors, thus rather giving rise to an n(-) layer than a semi-insulating layer, as supported by our theoretical simulation. Analysis of the Arrhenius plots constructed from the temperature-dependent I-V curves yield an average activation energy of Ru with reference to the conduction band equal to 0.44 and 0.52 eV under electron and hole injection, respectively.

  • 130. Soderstrom, D.
    et al.
    Lourdudoss, Sebastian
    KTH, Superseded Departments (pre-2005), Microelectronics and Information Technology, IMIT.
    Wallnas, M.
    Dadgar, A.
    Stenzel, O.
    Bimberg, D.
    Schumann, H.
    Studies on ruthenium-doped InP growth by low-pressure hydride vapor-phase epitaxy2001In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 148, no 7, p. G375-G378Article in journal (Refereed)
    Abstract [en]

    Ruthenium-doped InP (InP:Ru) has been grown by low-pressure hydride vapor-phase epitaxy (LP-HVPE) using bis(eta (5)-2,4-dimethylpentadienyl)ruthenium(II) as precursor. Ruthenium concentrations in the range 2 x 10(15) to 2 x 10(18) cm(-3) have been achieved. The Ru incorporation has been studied in terms of incorporation flux, and it is shown that the growth rate limits: the incorporation rate. From current-voltage measurements on n-InP/InP:Ru/n-InP and p-InP/InP:Ru/p-InP structures, resistivities greater than 10(3) Omega cm and greater than 10(10) Omega cm have been obtained, respectively.

  • 131.
    Stevens, Renaud
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lovqvist, Anita
    Aggerstam, Thomas
    Carlsson, Christina
    Barrios, Carlos Angulo
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Ghisoni, Marco
    Quest for very high speed VCSELs: pitfalls and clues2001In: Vertical-Cavity Surface-Emitting Lasers V, Vol. 4286, p. 71-79Article in journal (Refereed)
  • 132.
    Strömberg, Axel
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Omanakuttan, Giriprasanth
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Mu, Tangjie
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Natesan, Pooja Vardhini
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Tofa, Tajka Syeed
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Bailly, Myriam
    Grisard, Arnaud
    Gérard, Bruno
    Jang, Hoon
    KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics.
    Pasiskevicius, Valdas
    KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics.
    Laurell, Fredrik
    KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics.
    Lourdudoss, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Sun, Yan-Ting
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi-Phase-Matching Applications2019In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396XArticle in journal (Refereed)
    Abstract [en]

    Heteroepitaxial growth of orientation‐patterned (OP) GaP (OP‐GaP) on wafer‐bonded OP‐GaAs templates is investigated by low‐pressure hydride vapor phase epitaxy for exploiting the beneficial low two‐photon absorption properties of GaP with the matured processing technologies and higher‐quality substrates afforded by GaAs. First, GaP homoepitaxial selective area growth (SAG) is conducted to investigate the dependence of GaP SAG on precursor flows and temperatures toward achieving a high vertical growth rate and equal lateral growth rate in the [110] and [-110]‐oriented openings. Deteriorated domain fidelity is observed in the heteroepitaxial growth of OP‐GaP on OP‐GaAs due to the enhanced growth rate on domain boundaries by threading dislocations generated by 3.6% lattice matching in GaP/GaAs. The dependence of dislocation dynamics on heteroepitaxial growth conditions of OP‐GaP on OP‐GaAs is studied. High OP‐GaP domain fidelity associated with low threading dislocation density and a growth rate of 57 μm h−1 are obtained by increasing GaCl flow. The properties of heteroepitaxial GaP on semi‐insulating GaAs is studied by terahertz time‐domain spectroscopy in the terahertz range. The outcomes of this work will pave the way to exploit heteroepitaxial OP‐GaP growth on OP‐GaAs for frequency conversion by quasi‐phase‐matching in the mid‐infrared and terahertz regions.

  • 133.
    Strömberg, Axel
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Omanakuttan, Giriprasanth
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Natesan, P. V.
    Tofa, Tajkia Syeed
    KTH, School of Architecture and the Built Environment (ABE), Sustainable development, Environmental science and Engineering.
    Grisard, A.
    Gérard, B.
    Jang, H.
    KTH.
    Pasiskevicius, Valdas
    KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics.
    Laurell, Fredrik
    KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics.
    Lourdudoss, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Sun, Y. T.
    KTH.
    Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapour Phase Epitaxy for Quasi-Phase-Matching Applications2019In: 2019 compound semiconductor week, csw 2019 - proceedings, Institute of Electrical and Electronics Engineers Inc. , 2019Conference paper (Refereed)
    Abstract [en]

    Heteroepitaxial growth of orientation-patterned GaP on patterned GaAs template was developed by using hydride vapor phase epitaxy for quasi-phase-matching applications. We present the growth with well-defined periodic boundaries between (001) and (00 1) GaP domains. The GaP layer on planar GaAs was characterized by terahertz time-domain spectroscopy and the conductivity of GaP (0.16 S cm-1) was obtained in terahertz range.

  • 134. Suess, Martin J.
    et al.
    Peretti, Romain
    Liang, Yong
    Wolf, Johanna M.
    Bonzon, Christopher
    Hinkov, Borislav
    Nida, Selamnesh
    Jouy, Pierre
    Metaferia, Wondwosen
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Beck, Mattias
    Faist, Jerome
    Advanced Fabrication of Single-Mode and Multi-Wavelength MIR-QCLs2016In: PHOTONICS, ISSN 2304-6732, Vol. 3, no 2, article id 26Article in journal (Refereed)
    Abstract [en]

    In this article we present our latest work on the optimization of mid-infrared quantum cascade laser fabrication techniques. Our efforts are focused on low dissipation devices, broad-area high-power photonic crystal lasers, as well as multi-wavelength devices realized either as arrays or multi-section distributed feedback (DFB) devices. We summarize our latest achievements and update them with our most recent results.

  • 135. Sun, Y. T.
    et al.
    Anand, Srinivasan
    KTH, Superseded Departments, Electronics.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Crystallographic orientation dependence of impurity incorporation during epitaxial lateral overgrowth of InP2002In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 237, p. 1418-1422Article in journal (Refereed)
    Abstract [en]

    Temporally resolved epitaxial lateral overgrowth (ELO) of 12 alternating layers of unintentionally-doped and S-doped InP layers has been conducted in a low-pressure hydride vapour phase epitaxy reactor. The growth was conducted in the openings on a (0 0 1) n-InP substrate and oriented along 30degrees off the [1 1 0] direction. Based on the analysis of the cleaved cross-sections by scanning electron microscopy and scanning capacitance microscopy, an inhomogeneous dopant distribution has been observed within the same ELO layer. This is explained by invoking different bonding configurations exposed to the incorporating dopant atoms in the different emerging planes.

  • 136. Sun, Y. T.
    et al.
    Baskar, K.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Thermal strain in indium phosphide on silicon obtained by epitaxial lateral overgrowth2003In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 4, p. 2746-2748Article in journal (Refereed)
    Abstract [en]

    High-resolution x-ray diffraction reciprocal lattice mapping and low-temperature photoluminescence (PL) were used to study the thermal strain in InP layers grown on Si (001) substrate by hydride vapor-phase epitaxial lateral overgrowth (ELO) technique. Good agreement is found between the PL and x-ray measurements. We show that strain in the grown ELO InP/Si layers is affected by the aspect ratio (width to height ratio) of the ELO InP layer. Almost strain-free InP layer with high crystallographic quality is obtained on Si substrate, which is similar to that of a homoepitaxial InP layer.

  • 137. Sun, Y. T.
    et al.
    Messmer, E. R.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Ahopelto, J.
    Rennon, S.
    Reithmaier, J. P.
    Forchel, A.
    Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy2001In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 12, p. 1885-1887Article in journal (Refereed)
    Abstract [en]

    The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.

  • 138. Sun, Y. T.
    et al.
    Messmer, E. R.
    Soderstrom, D.
    Jahan, D.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Temporally resolved selective area growth of InP in the openings off-oriented from 110 direction2001In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 225, no 1, p. 9-15Article in journal (Refereed)
    Abstract [en]

    Temporally resolved selective area growth of InP on patterned substrates with openings off-oriented from [110] direction was studied by low pressure hydride vapour phase epitaxy system. Lateral overgrowth and vertical growth were analysed. The lateral growth rate was observed to be strongly dependent on the orientation of the openings. The maximum lateral growth rate was achieved when the openings oriented at 30 degrees and 60 degrees off [110] direction. The vertical growth rate was relatively constant, independent of the opening orientation. The growth behaviour of InP in openings aligned at low index directions was explained by dangling bond theory. A new phenomenon of inhomogeneous and orientation dependent dopant distribution within an overgrown layer was observed in stained cross-sections by SEM.

  • 139.
    Sun, Yanting
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Julian, N.
    Bowers, J.
    Pozina, G.
    Hultman, L.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Optical and structural properties of sulfur-doped ELOG InP on Si2015In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 21, article id 215303Article in journal (Refereed)
    Abstract [en]

    Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO<inf>2</inf> mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.

  • 140.
    Sun, Yan-Ting
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth2014In: CrystEngComm, ISSN 1466-8033, Vol. 16, no 34, p. 7889-7893Article in journal (Refereed)
    Abstract [en]

    A coherent InP/Si heterojunction with an atomically abrupt interface and low defect density is obtained by conducting corrugated epitaxial lateral overgrowth of InP on an engineered (001) Si substrate, with InP seed mesa oriented at 30[degree] from the [110] direction in a hydride vapour phase epitaxy reactor. Ohmic conduction across the InP/Si heterojunction can be achieved.

  • 141. Sun, Yan-Ting
    et al.
    Kataria, Himanshu
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Realization of atomically abrupt InP/Si heterojunction and dislocationreduction via corrugated epitaxial lateral overgrowthIn: CrystEngComm, ISSN 1466-8033, E-ISSN 1466-8033Article in journal (Other academic)
  • 142.
    Sun, Yan-Ting
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Lourdudoss, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integration2019In: FUTURE DIRECTIONS IN SILICON PHOTONICS / [ed] Lourdudoss, S Bowers, JE Jagadish, C, ELSEVIER ACADEMIC PRESS INC , 2019, p. 163-200Chapter in book (Refereed)
  • 143.
    Sun, Yanting
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Sulfur doped indium phosphide on silicon substrate grown by epitaxial lateral overgrowth2004In: 2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, p. 334-337Conference paper (Refereed)
    Abstract [en]

    The epitaxial lateral overgrowth (ELOG) of sulfur doped InP from ring shaped openings on SiNx masked InP/Si substrate in low pressure hydride vapor phase epitaxy system was investigated. Octahedral shaped ELOG InP templates with smooth surface were formed and studied by cathodoluminescence (CL). High energy transition at 825 nm (1.52 eV) due to the band filling effect caused by high concentration sulfur atoms trapped in threading dislocations was observed in spectra at 80 K. The band edge transition at 875 nm (1.42 eV) in CL spectra has no red shift caused by thermal strain. As observed in panchromatic image, defect free area was surrounded by high density threading dislocations that were pined by sulfur atoms due to impurity hardening. The quality of the ELOG InP templates is promising for the integration of photonic active layer on Si substrate.

  • 144.
    Sun, Yan-Ting
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Avella, M.
    Jimenez, J.
    Sulfur-doped indium phosphide on silicon substrate brown by ELOG2004In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 7, no 11, p. G269-G271Article in journal (Refereed)
    Abstract [en]

    The epitaxial lateral overgrowth (ELOG) of sulfur-doped InP on masked InP/Si substrate in a low-pressure hydride vapor phase epitaxy system was investigated. Octahedral shaped ELOG InP templates with smooth surface were formed and studied by cathodoluminescence (CL). High-energy transition at 825 nm due to the band-filling effect was observed in spectra at 80 K. The band edge transition at 875 nm has no red shift caused by thermal strain. As observed in panchromatic image, defect free area was surrounded by high density threading dislocations pinned by sulfur atoms due to impurity hardening.

  • 145.
    Sun, Yanting
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Direct Heterojunction of Polycrystalline InP/Si by Hydride Vapor Phase Epitaxy for Photovoltaic Application2013Conference paper (Refereed)
    Abstract [en]

    The direct heterojunction of polycrystalline InP on (001) and (111) silicon substrates was realized by indium assisted heteroepitaxy in a hydride vapor phase epitaxy system. The poly-InP growth under various temperatures and dopant incorporation were investigated. A coherent InP/Si interface and poly-InP growth rate > 20 μm/hour was observed by cross-sectional scanning electron microscopy (SEM). Effective n-type sulfur doping was revealed by stain-etching. The material properties of poly-InP were characterized by powder X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), photoluminescence (PL), and Raman spectroscopy. A preferential crystalline orientation of (111) plane with substrate orientation dependent grain size was observed. Raman spectroscopy characterization at different locations on poly-InP surface reveals residual tensile strain in InP on silicon. High optical quality of poly-InP is revealed by PL measurement.

  • 146.
    Sun, Yanting
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Omanakuttan, Giriprasanth
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth2015In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 21, article id 213504Article in journal (Refereed)
    Abstract [en]

    An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP: Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm(2) at a reverse voltage of -1V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm(2), an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.

  • 147. Suresh, S.
    et al.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Landgren, Gunnar
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Baskar, K.
    Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVD2010In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 312, no 21, p. 3151-3155Article in journal (Refereed)
    Abstract [en]

    Gallium nitride (GaN) epitaxial layers were grown with different V/III ratios by varying the ammonia (NH3) flow rate, keeping the flow rate of the other precursor, trimethylgallium (TMG), constant, in an MOCVD system. X-ray rocking curve widths of a (1 0 2) reflection increase with an increase in V/III ratio while the (0 0 2) rocking curve widths decrease. The dislocation density was found to increase with an increase in ammonia flow rate, as determined by hot-wet chemical etching and atomic force microscopy. 77K photoluminescence studies show near band emission at 3.49 eV and yellow luminescence peaking at 2.2 eV. The yellow luminescence (YL) intensity decreases with an increase in V/III ratio. Positron annihilation spectroscopy studies show that the concentration of Ga-like vacancies increases with an increase in ammonia flow rate. This study confirms that the yellow luminescence in the GaN arises due to deep levels formed by gallium vacancies decorated with oxygen atoms.

  • 148.
    Thylén, Lars
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Holmström, Petter
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Low-power nanophotonics: Material and device technology2013In: Integrated Optics: Physics And Simulations, SPIE - International Society for Optical Engineering, 2013, p. 87810Q-Conference paper (Refereed)
    Abstract [en]

    Development in photonics for communications and interconnects pose increasing requirements on reduction of footprint, power dissipation and cost, as well as increased bandwidth. Nanophotonics integrated photonics has been viewed as a solution to this, capitalizing on development in nanotechnology and an increased understanding of light matter interaction on the nanoscale. The latter can be exemplified by plasmonics and low dimensional semiconductors such as quantum dots (QDs). In this scenario the development of improved electrooptic materials is of great importance, the electrooptic polymers being an example, since they potentially offer superior properties for optical phase modulators in terms of power and integratability. Phase modulators are essential for e. g. the rapidly developing advanced modulation formats, since phase modulation basically can generate any type of modulation. The electrooptic polymers, in combination with plasmonics nanoparticle array waveguides or nanostructured hybrid plasmonic media can give extremely compact and low power dissipation modulators. Low-dimensional semiconductors, e. g. in the shape of QDs, can be employed for modulation or switching functions, offering possibilities for scaling to 2 or 3 dimensions for advanced switching functions. In both the high field confinement plasmonics and QDs, the nanosizing is due to near-field interactions, albeit being of different physical origin in the two cases. Epitaxial integration of III-V structures on Si plays an important role in developing high-performance light sources on silicon, eventually integrated with silicon electronics. A brief remark on all-optical vs. electronically controlled optical switching systems is also given.

  • 149.
    Wang, Z.
    et al.
    KTH, School of Information and Communication Technology (ICT).
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT).
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT).
    Hu, C.
    KTH, School of Information and Communication Technology (ICT).
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT).
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT).
    InP lateral overgrowth technology for silicon photonics2010In: Optics InfoBase Conference Papers, Optical Society of America (OSA) , 2010Conference paper (Refereed)
    Abstract [en]

    Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we can use the so called defect necking effect to filter out the threading dislocations propagating from the seed layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of silicon wafer. The obtained characterization results show that the grown InP layer has very high quality, which can be used as the base for further process of active photonic components on top of silicon.

  • 150. Wang, Z.
    et al.
    Liang, Y.
    Meng, B.
    Sun, Yan-Ting
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Omanakuttan, Giriprasanth
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Gini, E.
    Beck, M.
    Sergachev, I.
    Lourdudoss, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Faist, J.
    Scalari, G.
    Large area surface-emitting photonic crystal quantum cascade laser2019In: 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019, Institute of Electrical and Electronics Engineers Inc. , 2019Conference paper (Refereed)
    Abstract [en]

    Quantum cascade lasers (QCLs) are the sources of choice for many laser-based applications in the mid-infrared region. Because of the unique 2D in-plane coupling mechanism, a photonic crystal (PhC)-QCL [1] has superior advantages on mode selection, surface emission, and beam control. In this work, we present a large-area (1.5 mm × 1.5 mm) PhC-QCL operating under pulsed mode at room temperature (289 K). The surface-emitting peak power is as high as 1 W.

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