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  • 101.
    Sun, Xu
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Thylén, Lars
    KTH, Skolan för bioteknologi (BIO). KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Slot hybrid plasmonic ring resonator used for optical sensors and modulators2015Inngår i: Asia Communications and Photonics Conference, ACPC 2015, 2015Konferansepaper (Fagfellevurdert)
    Abstract [en]

    We theoretically and experimentally investigate performance of slot hybrid plasmonic rings, with better sensitivity regarding tested liquids than Si-based ones. This component can also be employed as high-efficiency optical modulators with active nonlinear material. © 2015 OSA.

  • 102.
    Sun, Xu
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO. Zhejiang University, Hangzhou, China.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO. Zhejiang University, Hangzhou, China.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO. Zhejiang University, Hangzhou, China.
    Nanoscale Surface Plasmon Polariton Disk Resonators, a Theoretical Analysis2016Inngår i: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 22, nr 2Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We analyze whispering gallery-type disk resonators with radii down to 50 nm. Single interface waveguiding is accomplished by a plasmonic-dielectric interface operating near the surface plasmon polariton (SPP) resonance, employing a hypothetical material with lower loss than what is currently available in metals or negative permittivity media. The disk is immersed in a second dielectric, nonresonant to the plasmonic medium. Due to the high effective index of the disk mode and the concomitant low radiation losses, the quality (Q) values of the resonator are solely determined by material losses, in contrast to more conventional nanoscale resonators. We calculate the dependence of the effective indices of the guided mode, the Q values of absorption and radiation, and the Purcell factor on the deviation from the SPP resonance.

  • 103.
    Thylen, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Loss Compensation by Amplification in Nanoplasmonic Waveguides: Possibilities and Limitations2009Inngår i: 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS: VOLS 1 AND 2, 2009, s. 78-79Konferansepaper (Fagfellevurdert)
  • 104.
    Thylen, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
    Materials R&D as enablers for quantum leaps in photonics device development and performance2006Inngår i: Optical Materials in Defence Systems Technology III / [ed] Grote, JG; Kajzar, F; Lindgren, M, BELLINGHAM, WA: SPIE-INT SOC OPTICAL ENGINEERING , 2006, Vol. 6401, s. U5-U7Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Progress in photonics and indeed in many areas of science and technology has in many cases been closely linked to development in materials. This development has in some cases been initiated by theoretical considerations and requirements formulation, in other cases novel materials have opened up unexpected applications. Examples of the former are given, where materials meeting certain requirements would lead to quantum leaps in device performance.

  • 105.
    Thylen, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Optik.
    Physical Layer Photonics Technology Challenges: The Quest for Power Efficiency, Functionality, Nanosized Devices and Electronics Complementarity2011Inngår i: 2011 13TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON), NEW YORK: IEEE , 2011Konferansepaper (Fagfellevurdert)
  • 106.
    Thylen, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    The strategic research agenda of the Technology Platform Photonics21: European component industry for broadband communications and the FP 7 - art. no. 6350022006Inngår i: Workshop on Optical Components for Broadband Communication / [ed] Fonjallaz, PY; Pearsall, TP, BELLINGHAM, WA: SPIE-INT SOC OPTICAL ENGINEERING , 2006, Vol. 6350, s. 35002-35002Konferansepaper (Fagfellevurdert)
  • 107.
    Thylen, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Bratkovsky, Alexander
    Li, Jingjing
    Wang, Shih-Yuan
    Limits on Integration as Determined by Power Dissipation and Signal-to-Noise Ratio in Loss-Compensated Photonic Integrated Circuits Based on Metal/Quantum-Dot Materials2010Inngår i: IEEE Journal of Quantum Electronics, ISSN 0018-9197, E-ISSN 1558-1713, Vol. 46, nr 4, s. 518-524Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We analyze the power dissipation that is associated with using the gain of an embedded medium (quantum dots) to overcome the losses inherent in plasmonics systems employed to produce a negative dielectric constant for nanophotonics circuits. This power dissipation is primarily due to the dissipative losses in the metal structures and Auger recombination in the quantum dots. The impact of amplifier mediated signal-to-noise ratio (SNR) degradation and its effect on integration is analyzed, and a tradeoff between low power dissipation and SNR is quantified.

  • 108.
    Thylen, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Qiu, Min
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC. KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Some emerging photonic technologies and their device impact: Photonic crystals, plasmonics and electromagnetically induced transparency2005Inngår i: Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks / [ed] cInerney, JG; Farrell, G; Denieffe, DM; Barry, LP; Gamble, HS; Hughes, PJ; Moore, A, BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING , 2005, Vol. 5825, s. 49-53Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Photonics is far behind electronics in maturity. The devices are orders of magnitude larger than their electronics counterparts and the functionality is low. But it appears that these issues are not fundamentally impossible to solve. In this paper some of the emerging possibilities to overcome the limitations mentioned above are briefly treated, and we discuss the utilization of these comparatively new phenomena to widen the application envelope of photonics technology to generate functions not normally associated with photonics. These developments could lead to quantum leaps in photonics devices, to complement the forceful engineering improvements. Examples of such potential candidate research fields for quantum leaps are: Coherent light matter interaction, plasmonics, quantum information and communications, photonic crystals, intersubband based devices. The list is by no means exhaustive. This paper will concentrate on coherent light matter interaction, plasmonics and photonic crystals

  • 109.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    A comparison of optically and electronically controlled optical switches2013Inngår i: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 113, nr 2, s. 249-256Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Electronically and optically controlled optical switches are compared with respect to switch energy requirements. Only switches based on optical phase change are treated, since these have the largest flexibility. Further, only switches that preserve input wavelength at the output are considered, due to cascadeability requirements. It is argued that as long as 'all-optical' switches need electronically controlled switches for information transfer to the optical signals controlling the all-optical switch, this will compromise any other advantages that the all-optical switch and the corresponding systems might have. A further application for all-optical switches, which currently are orders of magnitude faster than electronically controlled ones, would be in banks of electronically controlled slower all-optical switches which are all-optically multiplexed to drive all-optical switches to data rates not currently achievable by electronically controlled switches. It is argued that such systems will be complex, requiring sophisticated electronic synchronization and being inferior to corresponding wavelength division multiplexing systems. Power dissipation and switch energy are analyzed for two different physical mechanisms for controllably changing the refractive index in the all-optical and electronically controlled optical switches: Pockels and Kerr effects as well as the plasma or free carrier effect and the relative merits of electronically and optically controlled optical switches using these are discussed. It is shown that, in the former case, (Pockels and Kerr effects) using representative data, electronically controlled switches are generally more power efficient than the all-optical counterparts.

  • 110.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    A Moores law for photonics2006Inngår i: Proceedings of International Symposium on Biophotonics, Nanophotonics and Metamaterials, 2006, s. 252-259Konferansepaper (Fagfellevurdert)
    Abstract [en]

    We formulate a "Moore's law" for photonic integrated circuits, based on breaking down the diverse photonics device types in photonics circuits into equivalent basic elements or functions, making a comparison with the generic elements of electronic integrated circuits more meaningful The results serve as a benchmark of the evolution of photonic integrated circuits.

  • 111.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Creating a high quality factor negative epsilon photonic material from two level resonant systems2015Inngår i: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 119, nr 1, s. 33-39Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    A densely arranged matrix of passive resonant two-level system is analyzed, aiming at a medium with negative macroscopic epsilon with significantly lower losses than current materials. A quality factor is used to compare the proposed material with prevalent current negative epsilon ones. Requirements are derived on two-level system parameters in terms of spatial dipole density, dipole moment and transversal relaxation times in order to obtain negative epsilon in the range of -2 to -0 and quality factors more than an order of magnitude larger than currently used materials such as silver.

  • 112.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Prospects for nanophotonics circuits2008Inngår i: AOE 2007: ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, CONFERENCE PROCEEDINGS, SHENZHEN: AOE , 2008, s. 7-9Konferansepaper (Fagfellevurdert)
    Abstract [en]

    We discuss from a theoretical viewpoint the required advances in material technology and device structures needed to continue the rapid development of photonic circuit spatial integration density. Metamaterials and various waveguide device structures are discussed.

  • 113.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101).
    Status and prospects of integrated nanophotonics circuits2008Inngår i: Conf Proc Laser Electr Optic Soc Annu Meet CLEO, 2008, s. 810-811Konferansepaper (Fagfellevurdert)
    Abstract [en]

    In this paper, we discuss several ways of increasing modal confinement (for increased lateral packing density) as well as effective index (for eg ultra short resonators), essential for creating large lateral and longitudinal confinement and further advance the density of integration in integrated photonic circuits.

  • 114.
    Thylén, Lars
    et al.
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Arve, Per
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Hessmo, Björn
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Holmström, Petter
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Jänes, Peter
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Karlsson, Anders
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Qiu, Min
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Progress in opto-electronic devices2004Inngår i: / [ed] Lam, CF; Fan, CC; Hanik, N; Oguchi, K, BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING , 2004, Vol. 5280Konferansepaper (Fagfellevurdert)
    Abstract [en]

    We discuss the statu,, of photonics technology and review its possible evolution by way of several representative examples of emerging research areas, which could have a significant impact over a long-term, say 10-year perspective. The selected areas are considered potentially capable of providing the quantum leap progress necessary to solve some of the shortcomings of current photonics technology.

  • 115.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Berglind, Eilert
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Nanophotonics and negative ε materials2006Inngår i: Journal of Zhejiang University: Science, ISSN 1009-3095, Vol. 7, nr 1, s. 41-44Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The feasibility of using metal optics or negative ε materials, with the aim of reducing the transversal extent of waveguided photonic fields to values much less than the vacuum wavelength, in order to achieve significantly higher densities of integration in integrated photonics circuits that is possible today is discussed. Relevant figures of merit are formulated to this end and used to achieve good performance of devices with today's materials and to define required improvements in materials characteristics in terms of decreased scattering rates in the Drude model. The general conclusion is that some metal based circuits are feasible with today's metals. Frequency selective metal devices will have Q values on the order of only 10-100, and significant improvements of scattering rates or lowering of the imaginary part of ε have to be achieved to implement narrowband devices. A photonic Moore's law of integration densities is proposed and exemplified.

  • 116.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Berglind, Eilert
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Plasmonics, coherent light matter interactions and photonic crystals: Shaping the future of photonics?2006Inngår i: ICTON 2006: 8th International Conference on Transparent Optical Networks, Vol 1, Proceedings: ICTON, MPM, INDUSTRIAL, PICAW, GOWN / [ed] Marciniak, M, 2006, s. 1-5Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Photonics is far behind electronics in maturity. There are no large RAM type memories, the circuits are orders of magnitude larger than electronics IC circuits, the functionality is comparatively low. But it appears that few or none of these factors are fundamentally impossible to overcome, and perceiving the enormous potential in photonics, the field continues to be an area of dynamic rapid development. In this paper some of the emerging possibilities that exist are explored, and the possibilities to utilize these comparatively new phenomena to widen the application envelope of photonics technology and generate functions not normally associated with photonics are briefly discussed. These developments could lead to quantum leaps in photonics devices, to complement the forceful engineering improvements.

  • 117.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Moore’s law for photonic integrated circuits2006Inngår i: JZUS-A - Journal of Zhejiang University. Science, ISSN 1009-3095, Vol. 7, nr 12, s. 1961-1967Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We formulate a “Moore’s law” for photonic integrated circuits (PICs) and their spatial integration density using twomethods. One is decomposing the integrated photonics devices of diverse types into equivalent basic elements, which makes acomparison with the generic elements of electronic integrated circuits more meaningful. The other is making a complex componentequivalent to a series of basic elements of the same functionality, which is used to calculate the integration density for functionalcomponents realized with different structures. The results serve as a benchmark of the evolution of PICs and we can concludethat the density of integration measured in this way roughly increases by a factor of 2 per year. The prospects for a continuedincrease of spatial integration density are discussed.

  • 118.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Passive and Active Integrated Nanophotonics Devices and Circuits2010Konferansepaper (Fagfellevurdert)
  • 119.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101). Hewlett-Packard Laboratories, Palo Alto, CA 94304, United States .
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101).
    Plasmonics for Signal Processing2011Inngår i: 2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference, OFC/NFOEC 2011, WASHINGTON: Optical Society of America , 2011Konferansepaper (Fagfellevurdert)
    Abstract [en]

    We review some of the issues involved in using different plasmonic guided-wave structures for modulation, switching and filtering.

  • 120.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Fotonik och mikrovågsteknik, FMI.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Fotonik och mikrovågsteknik, FMI.
    Berglind, Eilert
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Fotonik och mikrovågsteknik, FMI.
    Yan, M.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Fotonik och mikrovågsteknik, FMI.
    Dai, D.
    Zhejiang Univ, Centre Opt & Electromagnet Res, State Key Lab Modern Opt Instrumentat, Hangzhou 310058, Zhejiang, Peoples R China..
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Fotonik och mikrovågsteknik, FMI.
    Bratkovsky, A.
    Hewlett Packard Labs, Palo Alto, CA 94304 USA..
    Complementing or Replacing Silicon and III-Vs: The Role of Plasmonics and Novel Materials in Future Integrated Photonics for Telecom and Interconnects2011Inngår i: 2011 13TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON) / [ed] Jaworski, M Marciniak, M, IEEE , 2011Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Integrated photonics has largely been based on silicon/silica and III-Vs in recent times. Both have their advantages and disadvantages, but neither seem capable of supporting a further significant reduction of device footprint to sustain the exponential decrease of this important parameter that we have witnessed since decades. The talk will analyze different aspects of plasmonics from this and a functionality point of view and further discuss some possible alternative materials.

  • 121.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101).
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101).
    Berglind, Eilert
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101).
    Yan, Min
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101).
    Dai, Daoxin
    Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101).
    Bratkovsky, Alex
    Complementing or replacing silicon and III–Vs: The role of plasmonics and novel materials in future integrated photonics for telecom and interconnects2011Inngår i: 2011 13th International Conference on Transparent Optical Networks, ICTON 2011, IEEE Communications Society, 2011Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Integrated photonics has largely been based on silicon/silica and III-Vs in recent times. Both have their advantages and disadvantages, but neither seem capable of supporting a further significant reduction of device footprint to sustain the exponential decrease of this important parameter that we have witnessed since decades. The talk will analyze different aspects of plasmonics from this and a functionality point of view and further discuss some possible alternative materials.

  • 122.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Berglind, Eilert
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Yan, Min
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Dai, Daoxin
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Bratkovsky, Alex
    Metamaterials- and Nanotechnology-based Low Power and Small Footprint Integrated Photonics2011Inngår i: 2011 IEEE Photonics Conference (PHO), IEEE Communications Society, 2011, s. 537-538Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Integrated nanophotonics has shown a remarkable development in recent years and can find applications in virtually all fields of photonics, though its predominant focus has so far been in telecom and lately computer interconnects. This progress has primarily been based on nanoand ΠI-V technology development, the introduction of silicon technology, with larger refractive index contrast than previously available, as well as subwavelength plasmonics structures. For the latter, a main problem, especially for ICT applications, has been the large optical loss associated with deep subwavelength confinement, as in this paper.

  • 123.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Bratkovsky, Alexander M.
    Hewlett-Packard Laboratories.
    Loss compensated photonic integrated circuits based on metal/quantum dot materials: Different structures and their power dissipation2009Inngår i: 2009 International Nano-Optoelectronics Workshop (iNOW), 2009, s. 105-106Konferansepaper (Fagfellevurdert)
    Abstract [en]

    We analyze different loss compensated metal/quantum dot based materials and waveguide structures.

  • 124.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik.
    Low Power Nanophotonics and its Applications in Data Centers2014Konferansepaper (Fagfellevurdert)
    Abstract [en]

    The evolution of future Data Centers requires novel means of information transmission due in part to the energy dissipated in the transport of information. Photonics in the form of active optical cables is used for both interrack as well as intra-rack connections. However, due to the superior bandwidth-density properties of photonics over copper based transmission, photonics is now being considered for inter-chip and even intra-chip interconnects. This requires novel approaches to create smaller (nanoscale), lower power dissipation functional devices in the transmission fabric, a development that could also be useful for a range of other applications. The current status as well as the prospects to achieve these ends and to take the next quantum leap in integrated nanophotonics are discussed.

  • 125.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Very-low-power and footprint integrated photonic modulators and switches for ICT2013Inngår i: Optoelectronic Integrated Circuits XV, SPIE - International Society for Optical Engineering, 2013, s. 862805-Konferansepaper (Fagfellevurdert)
    Abstract [en]

    The current development in photonics for communications and interconnects pose increasing requirements on reduction of footprint, power dissipation and cost, as well as increased bandwidth. Integrated nanophotonics has been viewed as one solution to this, capitalizing on development in nanotechnology as such as well as on increased insights into light matter interaction on the nanoscale. The latter can be exemplified by plasmonics and low-dimensional semiconductors such as quantum dots (QDs). In this scenario the development of better electrooptic materials is also of great importance, the electrooptic polymers being an example, since they potentially offer improved properties for optical phase modulators in terms of power and probably cost and general flexibility. Phase modulators are essential for e. g. the rapidly developing advanced modulation formats for telecom, since phase modulation basically can generate any type of modulation. The electrooptic polymers, e. g. in combination with plasmonics nanoparticle array waveguides or nanostructured hybrid plasmonic media can theoretically give extremely compact and low power dissipation modulators, still to be demonstrated. The low-dimensional semiconductors, e. g. in the shape of QDs, can be employed for modulation or switching functions, offering possibilities in the future for scaling to 2 or 3 dimensions for advanced switching functions. In both the plasmonics and QD cases, nanosizing and low power dissipation are generally due to near-field interactions, albeit being of different physical origin in the two cases. A comparison of all-optical and electronically controlled switching is given.

  • 126.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Jaskorzynska, Bozena
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Naruse, Makoto
    National Institute of Information and Communications Technology, , 4-2-1 Nukui-kita, Koganei, Tokyo, Japan 184-8795.
    Kawazoe, Tadashi
    School of Engineering, The University of Tokyo.
    Yan, Min
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Fiorentino, M.
    Westergren, Urban
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Nanophotonics for Low-Power Switches2013Inngår i: Optical FiberTelecommunications VIA: Components and Subsystems / [ed] Ivan Kaminow, Tingye Li and Alan Willner, Elsevier, 2013, s. 205-241Kapittel i bok, del av antologi (Annet vitenskapelig)
    Abstract [en]

    This chapter treats several approaches for employing nanophotonics or near-nanophotonics concepts to create low-power switches. The partly interrelated issues of low power dissipation and small device footprint are elucidated and figures of merit for switches formulated. Both optically and electronically controlled optical switches are treated and the crucial role of material development emphasized, illustrated by several examples, including both theoretical analysis of switch concepts and experimentally realized switches. Thus, electronically controlled switches based on hybrid, metamaterial and nanoparticle plasmonics, electrooptic polymers as well as switches based on silicon and photonic crystals are discussed. The all-optical switches focus on third-order nonlinear effects and carrier-induced refractive-index changes in III-V materials, as well as on emerging concepts of near-field-coupled quantum-dot switches. A brief comparison to electronic switches is done.

  • 127.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Lourdudoss, Sebastian
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Halvledarmaterial, HMA.
    Low-power nanophotonics: Material and device technology2013Inngår i: Integrated Optics: Physics And Simulations, SPIE - International Society for Optical Engineering, 2013, s. 87810Q-Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Development in photonics for communications and interconnects pose increasing requirements on reduction of footprint, power dissipation and cost, as well as increased bandwidth. Nanophotonics integrated photonics has been viewed as a solution to this, capitalizing on development in nanotechnology and an increased understanding of light matter interaction on the nanoscale. The latter can be exemplified by plasmonics and low dimensional semiconductors such as quantum dots (QDs). In this scenario the development of improved electrooptic materials is of great importance, the electrooptic polymers being an example, since they potentially offer superior properties for optical phase modulators in terms of power and integratability. Phase modulators are essential for e. g. the rapidly developing advanced modulation formats, since phase modulation basically can generate any type of modulation. The electrooptic polymers, in combination with plasmonics nanoparticle array waveguides or nanostructured hybrid plasmonic media can give extremely compact and low power dissipation modulators. Low-dimensional semiconductors, e. g. in the shape of QDs, can be employed for modulation or switching functions, offering possibilities for scaling to 2 or 3 dimensions for advanced switching functions. In both the high field confinement plasmonics and QDs, the nanosizing is due to near-field interactions, albeit being of different physical origin in the two cases. Epitaxial integration of III-V structures on Si plays an important role in developing high-performance light sources on silicon, eventually integrated with silicon electronics. A brief remark on all-optical vs. electronically controlled optical switching systems is also given.

  • 128.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Yan, Min
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Berglind, Eilert
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Dai, Daoxin
    Bratkovsky, Alex
    Integrated photonics for interconnect: Silicon photonics,  plasmonics or something else2011Konferansepaper (Fagfellevurdert)
  • 129.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Yan, Min
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Qiu, Min
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Dai, Daoxin
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Densely integrated photonics circuits beyond silicon: Prospects, applications and power dissipation issues2011Konferansepaper (Fagfellevurdert)
    Abstract [en]

    We analyze the possibility of using different plasmonic based waveguide devices for functions such as switching, modulation and filtering in photonic integrated circuits (PICs). Conclusions regarding the impact and remedies of Joule losses are given.

  • 130.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101). Hewlett-Packard Laboratories, Palo Alto, United States .
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101).
    Yuan, Jun
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101).
    Qiu, Min
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101).
    Bratkovsky, A. M.
    Integrated photonics in the future: Silicon, plasmonics or something else?2010Inngår i: 2010 Asia Communications and Photonics Conference and Exhibition, ACP 2010, 2010, s. 485-486Konferansepaper (Fagfellevurdert)
  • 131.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik.
    Marcinkevicius, Saulius
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik.
    Nanophotonics: A tutorial2012Inngår i: Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012, 2012, s. 224-225Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Nanophotonics has received much attention in recent years, fuelled by general interest and progress in nanotechnology but also by rapid advances in photonics technology. The tutorial will cover basics and applications of nanophotonics.

  • 132.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101). KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Ponizovskaya, E.
    Bratkovsky, A.
    Nanophotonics in integrated photonics: A view on metamaterials and devices2008Inngår i: Int. Nano-Optoelectron. Workshop, iNOW Coop. Int. Global-COE Summer Sch. (Photonics Integr.-Core Electron.: PICE) Int. Symp., 2008, s. 74-75Konferansepaper (Fagfellevurdert)
    Abstract [en]

    We discuss from a theoretical viewpoint the required advances in material technology and device structures needed to continue the rapid development of photonic circuit spatial integration density.

  • 133.
    Thylén, Lars
    et al.
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Qiu, Min
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Anand, Srinivasan
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Photonic crystals - A step towards integrated circuits for photonics2004Inngår i: ChemPhysChem, ISSN 1439-4235, E-ISSN 1439-7641, Vol. 5, nr 9, s. 1268-1283Artikkel, forskningsoversikt (Fagfellevurdert)
    Abstract [en]

    The field of photonic crystals has, over the past few years, received dramatically increased attention. Photonic crystals are artificially engineered structures that exhibit a period variation in one, two, or three dimensions of the dielectric constant, with a period of the order of the pertinent light wavelength. Such structures in three dimensions should exhibit properties similar to solid-state electronic crystals, such as bandgaps, in other words wavelength regions where light cannot propagate in any direction. By introducing defects into the periodic arrangement, the photonic crystals exhibit properties analogous to those of solid-state crystals. The basic feature of a photonic bandgap was indeed experimentally demonstrated in the beginning of the 1990s, and sparked a large interest in, and in many ways revitalized, photonics research. There are several reasons for this attention. One is that photonic crystals, in their own right, offer a proliferation of challenging research tasks, involving a multitude of disciplines, such as electromagnetic theory, nanofabrication, semiconductor technology, materials science, biotechnology, to name a few. Another reason is given by the somewhat more down-to-earth expectations that photonics crystals will create unique opportunities for novel devices and applications, and contribute to solving some of the issues that have plagued photonics such as large physical sizes, comparatively low functionality, and high costs. Herein, we will treat some basics of photonic crystal structures and discuss the state-of-the-art in fabrication as well give some examples of devices with unique properties, due to the use of photonic crystals. We will also point out some of the problems that still remain to be solved, and give a view on where photonic crystals currently stand.

  • 134.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Westergren, Urban
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Schatz, Richard
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Jänes, Peter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik.
    Recent developments in high-speed optical modulators2008Inngår i: Optical Fiber Telecommunications V: A: Components and subsystems / [ed] I. P. Kaminow, T. Li, A. E. Willner, London: Academic Press, 2008, s. 183-220Kapittel i bok, del av antologi (Fagfellevurdert)
  • 135.
    Thylén, Lars
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. Laboratory of Photonics and Microwave Engineering FMI, KTH, Kista, Sweden; Hewlett Packard Laboratories, USA.
    Wosinski, Lech
    Laboratory of Photonics and Microwave Engineering FMI, KTH, Kista, Sweden.
    Integrated photonics in the 21st century2014Inngår i: Photonics Research, ISSN 2327-9125, Vol. 2, nr 2, s. 75-81Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We review the emergence and development of integrated photonics and its status today. The treatise is focused on information and communications technology (ICT) applications, but the technology is generically employable for a wealth of other applications, such as sensors. General properties of the waveguides that form the basis of integrated photonics are reviewed, and several examples of integrated photonics based on silicon and plasmonics are presented. The all-important development of integrated low-power nanophotonics is discussed and current challenges and prospects of the field are elucidated. The treatment is focused on the photonic fabric between source and detector.

  • 136.
    Thylén, Lars
    et al.
    KTH, Skolan för bioteknologi (BIO), Teoretisk kemi och biologi. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Fotonik och mikrovågsteknik, FMI. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Sun, Xu
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Fotonik och mikrovågsteknik, FMI. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, D.
    Integrated nanophotonics for information technologies and sensors: Ways to solve the present gridlock in performance2017Inngår i: 2017 19th International Conference on Transparent Optical Networks (ICTON), IEEE Computer Society, 2017, artikkel-id 8024858Konferansepaper (Fagfellevurdert)
    Abstract [en]

    The decades long development in shrinking footprint and improving performance of photonics integrated circuits has seemingly slowed down in recent years, posing problems in e g interconnects in data centers with their ever increasing power requirements. Thus, routes to a continued development towards smaller footprint, lower power, higher performance integrated nanophotonics will be presented and discussed. Comparison to some nanoelectronics devices will be made.

  • 137. Wang, J.
    et al.
    Guan, X.
    He, Y.
    Shi, Yaocheng
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University, Zijingang Campus, China.
    Wang, Zhechao
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University, Zijingang Campus, China .
    He, Sailing
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University, Zijingang Campus, China .
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101). KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101). KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101). KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Sub-μm2 power splitters by using silicon hybrid plasmonic waveguides2011Inngår i: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 19, nr 2, s. 838-847Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Nano-scale power splitters based on Si hybrid plasmonic waveguides are designed by utilizing the multimode interference (MMI) effect as well as Y-branch structure. A three-dimensional finite-difference time-domain method is used for simulating the light propagation and optimizing the structural parameters. The designed 1×2 50:50 MMI power splitter has a nano-scale size of only 650 nm×530 nm. The designed Y-branch power splitter is also very small, i.e., about 900 nm×600 nm. The fabrication tolerance is also analyzed and it is shown that the tolerance of the waveguide width is much larger than±50 nm. The power splitter has a very broad band of over 500 nm. In order to achieve a variable power splitting ratio, a 2×2 two-mode interference coupler and an asymmetric Y-branch are used and the corresponding power splitting ratio can be tuned in the range of 97.1%:2.9%-1.7%:98.3% and 84%:16%-16%:84%, respectively. Finally a 1×4 power splitter with a device footprint of 1.9 μm×2.6 μm is also presented using cascaded Y-branches.

  • 138.
    Wang, Zhechao
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    Shi, Yaocheng
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Somesfalean, Gabriel
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101).
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101). KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    He, Sailing
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Wosinski, Lech
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101). KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Experimental Realization of a Low-loss Nano-scale Si Hybrid Plasmonic Waveguide2011Inngår i: 2011 OPTICAL FIBER COMMUNICATION CONFERENCE AND EXPOSITION (OFC/NFOEC) AND THE NATIONAL FIBER OPTIC ENGINEERS CONFERENCE, Washington: Optical Society of America, 2011Konferansepaper (Fagfellevurdert)
    Abstract [en]

    A novel hybrid plasmonic waveguide with nano-scale confinement, consisting of a metal layer separated from a SOI nano-rib by a thin silica layer has been realized. The loss of 0.01dB/mu m allows for ultra-high density photonic integration.

  • 139. Webb, Kevin J.
    et al.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik.
    Perfect-lens-material condition from adjacent absorptive and gain resonances2008Inngår i: Optics Letters, ISSN 0146-9592, E-ISSN 1539-4794, Vol. 33, nr 7, s. 747-749Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We suggest, based on the principle of causality and for a material exhibiting adjacent absorptive and gain resonances, that there can be an intervening frequency where perfect imaging is in theory possible. At this frequency, both the dielectric constant and the permeability are negative, leading to a negative refractive index, and there is no loss. In such a material exhibiting a double resonance, the gain must be at the higher frequency. Through appropriate tuning of the refractive index, all propagating and evanescent fields from the object could then in principle be reconstructed at the image plane, subject to practical implementation limits.

  • 140.
    Westergren, Urban
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Chacinski, Marek
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Compact and efficient modulators for 100 Gb/s ETDM for telecom and interconnect applications2009Inngår i: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 95, nr 4, s. 1039-1044Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    State of the art and prospects regarding semiconductor compact modulators and transmitters for on-off keying and more advanced modulations formats for output bitrates of 100 Gb/s and above are discussed. The implementation of a monolithically integrated transmitter comprising laser and light-intensity modulator is described and the prospects for a fully integrated transmitter for more advanced modulation formats elucidated, all for 100 Gb/s output bitrate.

  • 141.
    Westergren, Urban
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Yu, Yichuan
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Jänes, Peter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Holmström, Petter
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Efficient and compact light-intensity modulators for high frequencies and high bitrates2006Inngår i: ICTON 2006: 8th International Conference on Transparent Optical Networks, Vol 2, Proceedings: ESPC, NAON / [ed] Marciniak, M, 2006, s. 142-145Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Electroabsorption modulators (EAM) based on quantum-confined Stark effect (QCSE) in multiple-quantum wells (MQW) have been demonstrated to provide high-speed, low drive voltage, and high extinction ratio. They are compact in size and can be monolithically integrated with source lasers. In order to achieve both high speed and low drive-voltage operation, travelling-wave (TW) electrode structures can be used for EAMs. Modulation bandwidths of 100 GHz (-3 dBe) have been accomplished and transmission at 80 Gbit/s with non-return-to-zero (NRZ) code has been demonstrated for InP-based TWEAMs, indicating the possibility of reaching speeds of IOOGbit/s and beyond. In order to further increase the efficiency and reduce the drive voltage, MQW structures using intersubband (IS) instead of interband (QCSE) absorption are being investigated. Materials systems with large conduction band offset, such as GaN/Al(Ga)N or InGaAs/AlAsSb, are required for IS modulators. Critical for the performance of IS modulators is the linewidth of the absorption peak, hence IS modulators have the potential to outperform interband modulators given that a sufficiently high material quality can be achieved.

  • 142.
    Westergren, Urban
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC.
    Yu, Yichuan
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC. KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Thylen, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Kista Photonics Research Center, KPRC. KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    High-speed travelling-wave electro-absorption modulators2006Inngår i: Workshop on Optical Components for Broadband Communication / [ed] Fonjallaz, PY; Pearsall, TP, BELLINGHAM, WA: SPIE-INT SOC OPTICAL ENGINEERING , 2006, Vol. 6350, s. 35004-35004Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Electroabsorption modulators (EAM) based on quantum-confined Stark effect (QCSE) in multiple-quantum wells (MQW) have been demonstrated to provide high-speed, low drive voltage, and high extinction ratio. They are compact in size and can be monolithically integrated with continuous-wave (CW) lasers. In order to achieve both high speed and low drive-voltage operation, travelling-wave (TW) electrode structures can be used for EAMs. The inherently low impedance of high-speed EAMs may be transformed to values close to the standard 500hm impedance using periodic microwave structures with a combination of passive transmission lines with high characteristic impedance and active modulator sections with low impedance. Modulation bandwidths of 100GHz (-3dBe) have been accomplished with electrical reflections lower than -10dB in a 500hm system. Transmission at 80Gbit/s with non-return-to-zero (NRZ) code has been demonstrated for InP-based TWEAMs using electronic time-domain multiplexing (ETDM), indicating the possibility of reaching speeds of 100Gbit/s and beyond.

  • 143.
    Wosinska, Lena
    et al.
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Haralson, Joanna
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Thylén, Lars
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Öberg, Johnny
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Hessmo, Björn
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Benefit of Implementing Novel Optical Buffers in an Asynchronous Photonic Packet Switch2004Inngår i: Proceedings of ECOC-04, 2004Konferansepaper (Fagfellevurdert)
  • 144.
    Wosinska, Lena
    et al.
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Thylén, Lars
    KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
    Holmstrom, R. P.
    Large-capacity strictly nonblocking optical cross-connects based on microelectrooptomechanical systems (MEOMS) switch matrices: Reliability performance analysis2001Inngår i: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 19, nr 8, s. 1065-1075Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In this paper, the reliability performance of 128 x 128 optical cross-connects (OXCs) based on microelectrooptomechanical systems (MEOMS) switch matrices is considered. First, we compare a strictly nonblocking wavelength selective switch with a strictly nonblocking three-stage Clos architecture. The probability of maintenance of free operation has been investigated for both OXC structures. We present our calculation results for such commonly used reliability measures as mean time between failures (MTBF), mean downtime (MDT) per year, and steady-state unavailability. It is shown that the reliability performances of the considered OXCs are far from that requested. In this paper, we also investigate possibilities of improving the reliability performance of the considered OXCs by introducing shared redundancy of the MEOMS matrices. We propose two different protection schemes: one for the wavelength selective switch [1] and another for the three-stage Clos architecture. It is shown that the proposed protection schemes significantly improve the reliability performance for both cases. Finally, we compare the performance of the all-optical version of the OXC based on MEOMS matrices with the optoelectronic version of the OXC based on electronic cross-point switch matrices. It is shown that from a reliability viewpoint, the optical cross-connect based on MEOMS matrices is better than that with electrical cross-point switches. The influence of capacity expansion on the system reliability is discussed.

  • 145.
    Wosinska, Lena
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik.
    Öberg, Johnny
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Buffering and control in an all-optical packet switching node2005Inngår i: 2005 7th International Conference on Transparent Optical Networks, Vol 1, Proceedings, 2005, s. 205-211Konferansepaper (Fagfellevurdert)
    Abstract [en]

    In this paper we study novel types of optical memories in context of their usefulness for optical buffering applications. We describe a new type of photonic packet switch with electrical shared buffering and show that the employment of a few optical buffer positions to complement the electronic ones significantly improves the switch performance. Different admission algorithms are applied in order to provide quality of service support. Furthermore, we propose two designs for the node control block.

  • 146.
    Wosinski, Lech
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
    Liu, Liu
    Zhu, Ning
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
    Technology challenges for monolithically integrated waveguide demultiplexers2009Inngår i: CHINESE OPTICS LETTERS, ISSN 1671-7694, Vol. 7, nr 4, s. 315-318Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    A short overview of integrated waveguide demultiplexers for different applications ill future highly integrated optical communication systems is presented. Some fabricated devices based on amorphous silicon nanowire technology are described.

  • 147.
    Wosinski, Lech
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Lou, F.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Nanoscale Si-based photonics for next generation integrated circuits2013Inngår i: 2013 15th International Conference on Transparent Optical Networks (ICTON), IEEE , 2013, s. 6602976-Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Silicon-based integrated photonics became a very attractive technology for guiding and manipulating of light in highly integrated structures due to the large index contrast between silicon and cladding materials allowing for very high mode confinement. Moreover, these structures can be realized by conventional planar CMOS techniques. Different passive devices based on Si nanowire waveguides have been realized using SOI technology or amorphous silicon deposition with applications in highly integrated communication systems for optical networking, bio and sensing, as well as for computer interconnects in data centers. Nevertheless for future use, especially for inter-core and intra-core computer communication, structures allowing for subwavelength light confinement based on surface plasmon waveguiding are an attractive solution. Different methods to decrease or compensate the intrinsic high losses of these structures have been proposed. Here we report our work on design and experimental realization of hybrid plasmonic waveguides and devices that allow for considerable decrease of losses, still keeping sub-wavelength light confinement.

  • 148.
    Wosinski, Lech
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik.
    Lou, Fei
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik.
    Thylen, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik.
    Hybrid plasmonic components based on silicon nanowire platform2014Inngår i: 2014 13th International Conference on Optical Communications and Networks, ICOCN 2014, 2014Konferansepaper (Fagfellevurdert)
    Abstract [en]

    CMOS compatible photonic integrated circuits have gained great attentions in short haul interconnects applications because of the promises to tackle the issues of traditional copper interconnects. Towards the monolithic integration of electronics and photonics, lots of efforts have been made to decrease the device footprint by using surface plasmon polaritons (SPPs), in order to enhance performances and decrease power consumption. With current metals, this is, however, only true for single or few cascaded devices. This situation can be mitigated by hybridizing SPPs with dielectric modes; hybrid plasmonic waveguides based on silicon platform can provide an alternative to exploit the advantages of both plasmonics and silicon. This paper presents several examples of design, fabrication and characterization of hybrid plasmonic functional components based on silicon nanowire platform, including hybrid plasmonic directional couplers, polarization beam splitters, disks and rings with submicron radii. A proposal of electro-optic polymer modulator based on hybrid plasmonic ring resonator is also discussed. The presented components provide alternative perspectives of novel devices which may be useful in future inter- and intra-core communication systems.

  • 149.
    Wosinski, Lech
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Lou, Fei
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Hybrid Plasmonics for Computer Interconnects2013Inngår i: Asia Communications and Photonics Conference 2013, OSA Technical Digest, Optical Society of America, 2013, s. ATh4A-Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Hybrid plasmonic waveguide structures allows for sub-wavelength light confinement while keeping propagation losses on an acceptable level. Design and experimental realization of ultra-compact hybrid plasmonic devices based on a silicon platform are presented.

  • 150.
    Wosinski, Lech
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Lou, Fei
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Thylén, Lars
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Optik och Fotonik, OFO.
    Silicon- and Plasmonics-Based Nanophotonics for Telecom and Interconnects2014Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Silicon nanophotonics became recently a very promising solution for high-speed signal transmission and processing with high bandwidth and very compact size, even for multifunctional integrated structures. With submicron waveguide cross section and bending radius down to 2 mu m with acceptable losses (0.04 dB/90 degrees bend) these structures give promising perspectives for electronic - photonic integration on a common Si platform since they can be realized by conventional planar CMOS techniques. Many research groups, both in academia and the electronics industry, have demonstrated different passive and active components, as well as integrated functional devices. However for more complex optical architectures, for example in optical interconnects for inter-and intra-core data communication, even higher integration density and modal field confinement below the diffraction limit of light, are necessary. For downscaling of photonic components, different solutions based on surface plasmon waveguiding along metal - dielectric interfaces have been proposed including strip-line, slot-line [1] and v-grove [2] structures, as well as some more sophisticated multi-layered systems [3] and quantum dot arrays [4]. Unfortunately, most of them suffer from the high losses always associated with maximum light confinement, resulting in short propagation lengths of the order of several micrometers. Hybrid plasmonic structures, which consist of a low refractive index slot sandwiched between e.g. a gold layer and a silicon material, appear to be a good solution [5-7]. In such structures, light is partly localized in the low-index dielectric and partly in the high-index Si giving relaxed conditions for propagation of the hybrid mode, but still with high confinement. Losses as low as 0.01 dB/mu m (propagation length over 400 mu m) have been obtained experimentally [8]. This is still orders of magnitude higher than those of conventional photonic waveguides, but acceptable for many functional components, not only to decrease the overall size of the structure, but also due to some specific advantages plasmonic components can bring forward, including temperature and production error tolerances, energy efficiency, large Purcell factor and others. So the best choice will probably be to use some kind of hybrid nanoplasmonic-photonic structures with conventional photonic waveguiding and functional plasmonic components. Hybrid plasmonic microring modulators, for example, with sub-micron radius have an intrinsically low quality factor Q, which on one side causes low channel bandwidth of these devices, but simultaneously allows for temperature and production error tolerances. The Q value of a 500 nm radius microring is anyway 8 times higher than the Q of similar Si slot microrings [9]. According to our calculations done for modulators using electrooptic polymer (EOP), even with a moderate electrooptic coefficient of 80 pm/V, due to the small footprint, the device capacitance is very small allowing for RC-limited modulation speed of 190 GHz (modulation speed limited by the cavity photon lifetime is larger than 300 GHz) and giving the average power consumption of only 5 fJ/bit. Similarly for lasers, due to the small cavity volume we should be able to get lower threshold power for lasing than is the case for traditional laser designs.

1234 101 - 150 of 171
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