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  • 151. Wang, Z.
    et al.
    Liang, Y.
    Meng, B.
    Sun, Yan-Ting
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Omanakuttan, Giriprasanth
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Gini, Emilio
    Beck, M.
    Sergachev, I.
    Lourdudoss, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Faist, J.
    Scalari, G.
    Over 2W room temperature lasing on a large area photonic crystal quantum cascade laser2019In: Optics InfoBase Conference Papers, OSA - The Optical Society , 2019, article id SW4N.4Conference paper (Refereed)
    Abstract [en]

    We present a large-area (1.5 mm × 1.5 mm) photonic crystal quantum cascade laser, with over 2 W peak power at room temperature (289 K), and symmetrical, narrow (< 1◦), single-lobed surface-emitting beam.

  • 152.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    A monolithic integration platform for silicon photonics2011In: 2011 ICO International Conference on Information Photonics, IP 20112011 ICO International Conference on Information Photonics, IP 2011, IEEE Communications Society, 2011Conference paper (Refereed)
    Abstract [en]

    A novel epitaxial lateral overgrowth (ELOG) technology-based monolithic integration platform for silicon photonics is demonstrated. High quality, defect-free InP ELOG mesa has been experimentally obtained on silicon by using hydride vapor phase epitaxy (HVPE). The proposed platform provides unique advantages for the realization of active devices on silicon

  • 153.
    Wang, Zhechao
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Metaferia, Wondwosen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Hu, Chen
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    III-Vs on Si for photonic applications-A monolithic approach2012In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 177, no 17, p. 1551-1557Article in journal (Refereed)
    Abstract [en]

    Epitaxial lateral overgrowth (ELOG) technology is demonstrated as a viable technology to realize monolithic integration of III-Vs on silicon. As an alternative to wafer-to-wafer bonding and die-to-wafer bonding, ELOG provides an attractive platform for fabricating discrete and integrated components in high volume at low cost. A possible route for monolithic integration of III-Vs on silicon for silicon photonics is exemplified by the case of a monolithic evanescently coupled silicon laser (MECSL) by combining InP on Si/SiO2 through ELOG. Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. The structural design of a monolithic evanescently coupled silicon laser (MECSL) and its thermal resistivity are established through simulations. Material studies to realize the above laser through ELOG are undertaken by studying appropriate ELOG pattern designs to achieve InP on narrow regions of silicon. We show that defect-free InP can be obtained on SiO2 as the first step which paves the way for realizing active photonic devices on Si/SiO2 waveguides, e.g. an MECSL.

  • 154.
    Wang, Zhixin
    et al.
    Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland..
    Liang, Yong
    Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland..
    Meng, Bo
    Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland..
    Sun, Yan-Ting
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Omanakuttan, Giriprasanth
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Gini, Emilio
    Swiss Fed Inst Technol, FIRST Lab, CH-8093 Zurich, Switzerland..
    Beck, Mattias
    Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland..
    Sergachev, Ilia
    Wyss Zurich, Weinbergstr 35, CH-8092 Zurich, Switzerland..
    Lourdudoss, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Faist, Jerome
    Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland..
    Scalari, Giacomo
    Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland..
    Large area photonic crystal quantum cascade laser with 5 W surface-emitting power2019In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 27, no 16, p. 22708-22716Article in journal (Refereed)
    Abstract [en]

    Room temperature surface emission is realized on a large area (1.5 mm x 1.5 mm) photonic crystal quantum cascade laser (PhC-QCL) driven under pulsed mode, at the wavelength around 8.75 mu m. By introducing in-plane asymmetry to the pillar shape and optimizing the current injection with a grid-like window contact, the maximum peak power of the PhC-QCL is up to 5 W. The surface emitting beam has a crossing shape with 10 degrees divergence.

  • 155.
    Wang, Zhixin
    et al.
    Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland..
    Liang, Yong
    Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland..
    Meng, Bo
    Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland..
    Sun, Yan-Ting
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Omanakuttan, Giriprasanth
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Gini, Emilio
    Swiss Fed Inst Technol, FIRST Lab, CH-8093 Zurich, Switzerland..
    Beck, Mattias
    Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland..
    Sergachev, Ilia
    Wyss Zurich, Weinbergstr 35, CH-8092 Zurich, Switzerland..
    Lourdudoss, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Photonics.
    Faist, Jerome
    Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland..
    Scalari, Giacomo
    Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland..
    Over 2W room temperature lasing on a large area photonic crystal quantum cascade laser2019In: 2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), IEEE , 2019Conference paper (Refereed)
    Abstract [en]

    We present a large-area (1.5 mm x 1.5 mm) photonic crystal quantum cascade laser, with over 2 W peak power at room temperature (289 K), and symmetrical, narrow (<1 degrees), single-lobed surface-emitting beam.

  • 156.
    Wosinski, Lech
    et al.
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Lou, Fei
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Wang, Zhechao
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Dai, Daoxin
    KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Silicon- and plasmonics-based nanophotonics for telecom and interconnects2012In: 2012 Asia Communications And Photonics Conference (ACP), 2012, p. AW1A.3-Conference paper (Refereed)
    Abstract [en]

    We presented a set of fabricated devices based on silicon nanowire waveguides in application to telecom and optical interconnects. New developments in form of hybrid plasmonic waveguides allowing for sub-wavelength light confinement are also included.

  • 157.
    Wosinski, Lech
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Wang, Zhechao
    Lou, Fei
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Dai, Daoxin
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Thylén, Lars
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Advanced silicon device technologies for optical interconnects2012In: Optoelectronic Integrated Circuits XIV / [ed] Louay A. Eldada, El-Hang Lee, SPIE - International Society for Optical Engineering, 2012, p. 826506-Conference paper (Refereed)
    Abstract [en]

    Silicon photonics is an emerging technology offering novel solutions in different areas requiring highly integrated communication systems for optical networking, sensing, bio-applications and computer interconnects. Silicon photonicsbased communication has many advantages over electric wires for multiprocessor and multicore macro-chip architectures including high bandwidth data transmission, high speed and low power consumption. Following the INTEL's concept to "siliconize" photonics, silicon device technologies should be able to solve the fabrication problems for six main building blocks for realization of optical interconnects: light generation, guiding of light including wavelength selectivity, light modulation for signal encoding, detection, low cost assembly including optical connecting of the devices to the real world and finally the electronic control systems.

  • 158. Yoo, S. J. B.
    et al.
    Heritage, J. P.
    Hernandez, V. J.
    Scott, R. P.
    Cong, W.
    Fontaine, N. K.
    Broeke, R. G.
    Cao, J.
    Seo, S. W.
    Baek, J. H.
    Soares, F. M.
    Du, Y.
    Yang, C.
    Jiang, W.
    Aihara, K.
    Ding, Z.
    Kolner, B. H.
    Pham, Anh-Vu
    Lin, Shu
    Olsson, F.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Liou, K. Y.
    Chu, S. N. G.
    Hamm, R. A.
    Patel, B.
    Hobson, W. S.
    Lothian, J. R.
    Vatanapradit, S.
    Gruezke, L. A.
    Tsang, W. T.
    Shearn, M.
    Scherer, A.
    Spectral phase encoded time spread optical code division multiple access technology for next generation communication networks Invited2007In: Journal of Optical Networking, ISSN 1536-5379, Vol. 6, no 10, p. 1210-1227Article in journal (Refereed)
    Abstract [en]

    We overview and summarize the progress of the spectral phase encoded time spreading (SPECTS) optical code division multiple access (O-CDMA) technology. Recent progress included a demonstration of a 320 Gbit/s (32-user x 10 Gbit/s) all-optical passive optical network testbed based on the SPECTS O-CDMA technology and a theoretical prediction of the spectral efficiency at 100% and above. In particular, InP-based integrated photonics allows implementation of SPECTS O-CDMA transmitters and receivers monolithically integrated on a chip. The integrated InP chip technology not only allows robust and compact configurations for practical and low-cost O-CDMA network deployments but also offers code reconfigurations at rapid rates for secure communication applications.

  • 159. Yoo, S. J. B.
    et al.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    InP photonic integrated circuits for optical communciations2008Conference paper (Refereed)
    Abstract [en]

    This paper describes photonic integration circuits (PICs) realized on the InP platform including high-speed mode locked lasers, arrayed waveguide gratings (AWGs), differential Mach-Zehnder optical switches (MZI), and high-speed amplitude and phase modulators. Selected area hydride vapor phase epitaxy (HVPE) and organometallic chemical vapor deposition (OMCVD) were used to realized planarized and passivated integration including active and passive elements. The integrated chips of various configurations were investigated for 'Optical Code Division Multiple Access (O-CDMA)', in local area networks, and for 'Optical Arbitrary Waveform Generation (OAWG),' in high-speed otptical communications.

  • 160. Zheng, Qiye
    et al.
    Kim, Honggyu
    Zhang, Runyu
    Sardela, Mauro
    Zuo, Jianmin
    Manavaimaran, Balaji
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Sun, Yan-Ting
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Braun, Paul V.
    Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy2015In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 118, no 22, article id 224303Article in journal (Refereed)
    Abstract [en]

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1-xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  • 161. Zhou, X. P.
    et al.
    Soares, F. M.
    Fontaine, N. K.
    Baek, J. H.
    Cheung, S.
    Shearn, M.
    Scherer, A.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Liu, K. Y.
    Tsang, W. T.
    Yoo, S. J. B.
    16-channel × 100-GHz monolithically integrated O-CDMA transmitter with SPECTS encoder and seven 10-GHz mode-locked lasers2010In: 2010 Conference on Optical Fiber Communication, Collocated National Fiber Optic Engineers Conference, OFC/NFOEC 2010, New York: IEEE , 2010, p. 5465650-Conference paper (Refereed)
    Abstract [en]

    We demonstrate a fully-integrated O-CDMA transmitter by monolithically integrating 7 collidingpulse mode-locked lasers with two arrayed waveguide gratings and 16 phase modulators in InP technology.

  • 162.
    Öberg, Magnus
    et al.
    KTH, Superseded Departments, Electronics.
    Kjebon, Olle
    KTH, Superseded Departments, Electronics.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Electronics.
    Nilsson, Stefan
    KTH, Superseded Departments, Electronics.
    Bäckbom, Lena
    KTH, Superseded Departments, Electronics.
    Streubel, Klaus
    KTH, Superseded Departments, Electronics.
    Wallin, Johan
    KTH, Superseded Departments, Electronics.
    Increased modulation bandwidth up to 20 GHz of a detuned-loaded DBR laser1994In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 6, no 2, p. 161-163Article in journal (Refereed)
    Abstract [en]

    A small signal amplitude modulation bandwidth of 20 GHz has been obtained with a three-section tunable DBR laser fabricated with semi-insulating current blocking layers grown by hydride VPE. The modulation bandwidth and laser linewidth are strongly dependent on the position of the lasing mode relative to the Bragg reflection peak.

1234 151 - 162 of 162
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