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  • 701.
    Östling, Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    High power devices in wide bandgap semiconductors2011Inngår i: SCI CHINA-INF SCI, ISSN 1674-733X, Vol. 54, nr 5, s. 1087-1093Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. Recently Schottky diodes are offered by both USA and Europe based companies. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now reaching the market. The interest is rapidly growing for these devices in high power and high temperature applications. The main advantages of wide bandgap semiconductors are their very high critical electric field capability. From a power device perspective the high critical field strength can be used to design switching devices with much lower losses than conventional silicon based devices both for on-state losses and reduced switching losses. This paper will review the current state of the art in active switching device performance for both SiC and GaN devices. SiC material quality and epitaxy processes have greatly improved and degradation free 100 mm wafers are readily available. This is encouraging since also bipolar devices now are attractive with good long term stability. SiC wafers still have a too high cost to be fully cost efficient. However, the SiC wafer roadmap looks very favorable as volume production takes off. For GaN materials the main application area is geared towards the lower power rating level up to 1 kV on mostly lateral FET designs. The cost advantage is interesting for GaN when grown on Si substrates to bring down costs.

  • 702.
    Östling, Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Nanoscaled SiGe based MOSETs2010Inngår i: Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, s. 1-8Konferansepaper (Fagfellevurdert)
    Abstract [en]

    This paper presents an overview of the technological challenges facing the future scaling of device dimensions needed to meet the performance scaling in accordance with Moore's law. A number of performance boosters have to be introduced in order to keep up with the expected performance gain in each new technology node. The introduction of strain engineering is an important feature as well as the implementation of high-k dielectrics. From the 32 nm node and forward there is an urgent search for a fundamental breakthrough to achieve low access resistance to the drain and source areas. This paper will focus to a large extent on this latter area and discuss metallic source/drain (MSD) contacts in nanoscaled MOSFET technology. MSD contacts offer extremely low S/D parasitic resistance, abruptly sharp junctions between S/D and channel and preferably low temperature processing. Recently great efforts have been achieved on Pt- and Ni-silicide implementation. A conclusion is that MSD MOSFETs are competitive candidates for future generations of CMOS technology.

  • 703.
    Östling, Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    SiC device technology for energy efficiency and high temperature operation2013Inngår i: 2013 IEEE International Conference of Electron Devices and Solid-State Circuits: EDSSC 2013, 2013Konferansepaper (Fagfellevurdert)
    Abstract [en]

    This paper will give a brief overview of current state of the art device technology for SiC discrete devices and applications. The superior energy efficiency of SiC devices will be demonstrated and compared to its silicon counterparts.

  • 704.
    Östling, Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Silicon Carbide Based Power Devices2010Inngår i: 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010, s. 13.3.1-13.3.4Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Silicon carbide is considered as a strong power semiconductor material candidate to address the emerging market of hybrid electrical vehicle, photovoltaic inverter applications as well as power supplies. This paper presents the current technology status on the most promising device types that are or soon will be available on the market.

  • 705.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Dentoni Litta, Eugenio
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Hellström, Per-Erik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Recent advances in high-k dielectrics and inter layer engineering2014Inngår i: Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, 2014Konferansepaper (Fagfellevurdert)
    Abstract [en]

    State-of-the-art CMOS technology relies on the integration of multi-layer high-k/metal gate stacks in order to achieve high capacitance density while fulfilling the requirements in terms of gate leakage current density, interface state density, channel mobility, threshold voltage and reliability. Conventional SiOx/HfO2 gate dielectric stacks are capable of meeting the performance targets of current technology nodes and have been shown to possess sufficient short-term scalability, but solutions providing enhanced long-term scalability are actively researched, mostly via integration of higher-k oxides or high-k interfacial layers. This paper provides an overview of recent research efforts in this area, focusing on integration of high-k interfacial layers. We then analyze the potential scalability improvement which can be obtained through integration of thulium silicate as interfacial layer and summarize the main results supporting its applicability to future technology nodes.

  • 706.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Domeij, Martin
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zaring, Carina
    Konstantinov, A.
    Ghandi, Reza
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Buono, Benedotto
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Hallen, Anders
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    SiC bipolar power transistors: Design and technology issues for ultimate performance2010Inngår i: 2010 MRS Spring Meeting, 2010, Vol. 1246, s. 175-186Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Silicon carbide (SiC) semiconductor devices for high power are becoming more mature and are now commercially available as discrete devices. Schottky diodes have been on the market since a few years but also bipolar junction transistors (BJTs), JFETs and MOSFETs are now reaching the market. The interest is rapidly growing for these devices in high power and high temperature applications. The BJTs have low conduction losses, fast switching capability, operate in normally-off mode, have high radiation hardness, and can handle high power density.

    This paper will review the current state of the art in active switching device performance with special emphasis on BJTs. Device performance has been demonstrated over a wide temperature interval. A very important feature in high power switch applications is the low on-resistance of a device. Better material quality and epi processes suppress the amount of basal plane dislocations to avoid stacking fault formation generated during high current injection. This has long been a concern for bipolar SiC devices but several research reports and long term reliability measurements of pn-junctions show that the bipolar degradation problem can be solved by a fine-tuned epitaxial technique. A discussion on surface passivation control is included. Finally, an example of a power switching module is given also demonstrating the excellent paralleling capability of BJTs.

  • 707.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Ghandi, Reza
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Buono, Benedetto
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Lanni, Luigia
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, B.Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    SiC Bipolar Devices for High Power and Integrated Drivers2011Inngår i: Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE, IEEE conference proceedings, 2011, , s. 4s. 227-234Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. The first SiC device to reach the market was the unipolar Schottky diode. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now being offered in the voltage range up to 1.2 kV. SiC material quality and epitaxy processes have greatly improved and degradation free 100 mm wafers are readily available, which has removed one obstacle for the introduction of bipolar devices. The SiC wafer roadmap looks very favorable as volume production takes off. Other advantages of SiC are the possibility of high temperature operation (>; 300 °C) and in radiation hard environments, which could offer considerable system advantages. Thanks to the mature SiC process technology, low-power integrated circuits are now also viable. Such circuits could find use in integrated drivers operating at elevated temperatures.

  • 708.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Ghandi, Reza
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, Bengt Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Buono, Benedetto
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Silicon carbide bipolar power devices2011Inngår i: ECS Transactions, 2011, nr 8, s. 189-200Konferansepaper (Fagfellevurdert)
    Abstract [en]

    This paper reviews the current state of the art in active switching device performance for SiC BJTs. In addition, some results from simulations are shown with particular attention on temperature and design dependence of the current gain. A design to improve conductivity modulation is also suggested. Finally, performance of a 2.8 kV BJT are illustrated. This device demonstrates high current gain of 52, low on-resistance of 6.8 mΩcm 2, fast switching, and no bipolar degradation.

  • 709.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Ghandi, Reza
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    SiC power devices - present status, applications and future perspective2011Inngår i: 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2011, s. 10-15Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. Recently Schottky diodes are offered by both USA and Europe based companies. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now available on the commercial market. The interest is rapidly growing for these devices in high power and high temperature applications. The main advantages of wide bandgap semiconductors are their very high critical electric field capability. From a power device perspective the high critical field strength can be used to design switching devices with much lower losses than conventional silicon based devices both for on-state losses and reduced switching losses. This paper reviews the current state of the art in active switching device performance for both SiC and GaN. SiC material quality and epitaxy processes have greatly improved and degradation free 100 mm wafers are readily available. The SiC wafer roadmap looks very favorable as volume production takes off. For GaN materials the main application area is geared towards the lower power rating level up to 1 kV on mostly lateral FET designs. Power module demonstrations are beginning to appear in scientific reports and real applications. A short review is therefore given. Other advantages of SiC is the possibility of high temperature operation (> 300 degrees C) and in radiation hard environments, which could offer considerable system advantages.

  • 710.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Gudmundsson, Valur
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Hellström, Per-Erik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, B. Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zhang, Zhen
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zhang, Shi-Li
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Towards Schottky-Barrier Source/Drain MOSFETs2008Inngår i: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 / [ed] Yu M, An X, NEW YORK: IEEE , 2008, s. 146-149Konferansepaper (Fagfellevurdert)
    Abstract [en]

    This paper provides an overview of metal source/drain (S/D) Schottky-barrier (SB) MOSFET technology. The technology offers several benefits for scaling CMOS, i.e., extremely low source/drain resistance, sharp junctions from S/D to channel and low temperature processing. A successful implementation of the technology needs to overcome new obstacles such as SB height engineering and precise control of silicide growth. Device design factors such as S/D to gate underlap, Si film thickness and oxide thickness affect device performance owing to their effects on the SB width. In the past two years several groups have demonstrated high-performance SB MOSFETs, which places the technology as a promising candidate for future generations of CMOS technology.

  • 711.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Henkel, Christoph
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Dentoni Litta, Eugenio
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, Gunnar B.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Hellström, Per-Erik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Naiini, Maziar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Olyaei, Maryam
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Vaziri, Sam
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Bethge, O.
    Bertagnolli, E.
    Lemme, Max C.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Atomic layer deposition-based interface engineering for high-k/metal gate stacks2012Inngår i: ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE , 2012, s. 6467643-Konferansepaper (Fagfellevurdert)
    Abstract [en]

    This review will discuss the in-situ surface engineering of active channel surfaces prior to or during the ALD high-k/metal gate deposition process. We will show that by carefully choosing ALD in-situ pre-treatment methods and precursor chemistries relevant electrical properties for future high-k dielectrics can be improved. Different high-k dielectrics such as Hafnium-Oxide (HfO2), Aluminum-Oxide (Al2O3), Lanthanum-Lutetium-Oxide (LaLuO3) and Lanthanum-Oxide (La 2O3) for CMOS-based device technology are investigated in combination with Silicon (Si) and Germanium (Ge) substrates. Additionally, the use of ALD for deposition of a high-k dielectric gate stack on Graphene is discussed.

  • 712.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Koo, S.-M.
    Domeij, Martin
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Danielsson, Erik
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    SiC Device Technologies2005Inngår i: Encyclopedia of RF and Microwave Engineering: vol 5 / [ed] Kai Cang, Wiley-Blackwell, 2005, 1, s. 4613-Kapittel i bok, del av antologi (Fagfellevurdert)
  • 713.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Luo, Jun
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Gudmundsson, Valur
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Hellström, Per Erik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, Bengt Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Integration of metallic source/drain (MSD) contacts in nanoscaled CMOS technology2010Inngår i: ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2010, s. 41-45Konferansepaper (Fagfellevurdert)
    Abstract [en]

    An overview of metallic source/drain (MSD) contacts in nanoscaled MOSFET technology is provided in this paper. MSD contacts offer several benefits for nanoscaled CMOS, i.e., extremely low S/D parasitic resistance, abruptly sharp junctions between S/D and channel and preferably low temperature processing. In order to achieve high performance MSD MOSFETs, many design parameters such as Schottky barrier height (SBH), S/D to gate underlap, top Si layer thickness, oxide thickness and so on should be optimized. Recently, a lot of efforts have been invested in MSD MOSFETs based on Pt- and Ni-silicide implementation and several promising results have been reported in literature. The experimental work as well as the results of Monte Carlo simulations by this research team and by other research teams is discussed in this paper. It will be shown that the present results place MSD MOSFETs as a competitive candidate for future generations of CMOS technology.

  • 714.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Luo, Jun
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Gudmundsson, Valur
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Hellström, Per-Erik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, B. Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Nanoscaling of MOSFETs and the implementation of Schottky barrier S/D contacts2010Inngår i: 2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings, 2010, s. 9-13Konferansepaper (Fagfellevurdert)
    Abstract [en]

    This paper provides an overview of metallic source/drain (MSD) Schottky-barrier (SB) MOSFET technology. This technology offers several benefits for scaling CMOS, i.e., extremely low S/D series resistance, sharp junctions from S/D to channel and low temperature processing. A successful implementation of this technology needs to overcome new obstacles such as Schottky barrier height (SBH) engineering and careful control of SALICIDE process. Device design factors such as S/D to gate underlap, Si film thickness and oxide thickness affect device performance owing to their effects on the SB width. Recently, we have invested a lot of efforts on Pt- and Ni-silicide MSD SB-MOSFETs and achieved some promising results. The present work, together with the work of other groups in this field, places silicide MSD SB-MOSFETs as a competitive candidate for future generations of CMOS technology.

  • 715.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Luo, Jun Hang
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Gudmundsson, Valur
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Hellström, Per-Erik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Technology challenges in silicon devices beyond the 16 nm node2011Inngår i: Proceedings of the 18th International Conference: Mixed Design of Integrated Circuits and Systems, MIXDES 2011, 2011, s. 27-31Konferansepaper (Fagfellevurdert)
    Abstract [en]

    An overview of metallic source/drain (MSD) contacts in nano-scaled MOSFET technology is provided in this paper. MSD contacts offer several benefits for nano-scaled CMOS, i.e. extremely low S/D parasitic resistance, abruptly sharp junctions between S/D and channel and preferably low temperature processing. In order to achieve high performance MSD MOSFETs, many design parameters such as Schottky barrier height (SBH), S/D to gate underlap, top Si layer thickness, oxide thickness should be optimized. Recently, efforts have been invested in MSD MOSFETs based on Pt- and Ni-silicide implementation and several promising results have been reported in literature. The experimental work as well as the results of Monte Carlo simulations by several investigators, including the authors, is discussed in this paper. It will be shown that the present results place MSD MOSFETs as a competitive candidate for future generations of CMOS technology.

  • 716.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, B. Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Editorial Selected papers from the 15th Ultimate Integration on Silicon (ULIS) conference2015Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 108, s. 1-1Artikkel i tidsskrift (Fagfellevurdert)
  • 717.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, B. Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    SELECTED PAPERS FROM THE ESSDERC 2011 CONFERENCE Foreword2012Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 74, s. 1-1Artikkel i tidsskrift (Annet vitenskapelig)
  • 718.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, B. Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Von Haartman, Martin
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Hållstedt, Julius
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Hellström, Per-Erik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zhang, Shili
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Critical technology issues for deca-nanometer MOSFETs2007Inngår i: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, s. 27-30Konferansepaper (Fagfellevurdert)
    Abstract [en]

    An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-K gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed.

  • 719.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Malm, B. Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    von Haartman, Martin
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Hållstedt, Julius
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Zhang, Zhen
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Hellstrom, Per-Erik
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zhang, Shili
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
    Device integration issues towards 10 nm MOSFETs2006Inngår i: 2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, NEW YORK, NY: IEEE , 2006, s. 25-30Konferansepaper (Fagfellevurdert)
    Abstract [en]

    An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. Implementation of high K gate dielectrics is presented and device performance is demonstrated for TiN metal gate surface channel SiGe MOSFETs with a gate stack based on ALD-formed HfO(2)/Al(2)O(3). Low frequency noise properties for those devices are also analyzed. A selective SiGe epitaxy process for low resistivity source/drain contacts has been developed and implemented in pMOSFETs. A spacer pattering technology using optical lithography to fabricate sub 50 nm high-frequency MOSFETs and nanowires is demonstrated, Finally ultra thin body Sol devices with high mobility SiGe channels are demonstrated.

  • 720.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, GunnarKTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    ESSDERC 2011 Proceedings2011Konferanseproceedings (Fagfellevurdert)
  • 721.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    High Speed Electronics2010Inngår i: Ion Beams in Nanoscience and Technology / [ed] Ragnar Hellborg, Harry J. Whitlow, Yanweng Zhang, Springer Berlin/Heidelberg, 2010, 1, s. 457-Kapittel i bok, del av antologi (Annet vitenskapelig)
  • 722.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Malm, Gunnar
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Radamson, Henry H.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Foreword2011Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 60, nr 1Artikkel i tidsskrift (Fagfellevurdert)
  • 723.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Salemi, Arash
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Elahipanah, Hossein
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Zetterling, Carl-Mikael
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    State of the art Power Switching Devices in SiC and their Applications2016Inngår i: 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), IEEE, 2016, s. 122-123Konferansepaper (Fagfellevurdert)
    Abstract [en]

    This paper gives an overview of the current state of the art device technology for SiC discrete devices and applications. The superior switching performance is discusses as well as the energy efficiency of SiC devices. New emerging applications of SiC devices are also discussed focusing on high temperature capability such as integrated digital and analog circuits up to 600 C. Finally, MEMS and Bio applications will be briefly reviewed.

  • 724.
    Östling, Mikael
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Smith, Anderson
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Vaziri, Sam
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Delekta, Szymon Sollami
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Li, Jiantong
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
    Lemme, Max C.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar. Siegen University, Germany.
    Emerging graphene device technologies2016Inngår i: Emerging Nanomaterials and Devices, Electrochemical Society, 2016, Vol. 75, nr 13, s. 17-35, artikkel-id 13Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Graphene has a wide range of attractive electrical and mechanical properties. This unique blend of properties make it a good candidate for emerging and future device technologies, such as sensors, high frequency electronics, and energy storage devices. In this review paper, each of the aforementioned applications will be explored along with demonstrations of their operating principles. Specifically, we explore pressure and humidity sensors, graphene base transistor for high frequency applications, and supercapacitors. In addition, this paper provides a general overview of these graphene technologies and, in the case of pressure and humidity sensors, benchmarking against other competing technologies. This paper further shows possible and prospective paths that are suitable for future graphene research to take.

12131415 701 - 724 of 724
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