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  • 1.
    Aggerstam, Thomas
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Radamson, Henry H.
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Sjödin, Mikael
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Lorenzini, P.
    CNRS-CHREA.
    Look, D.C.
    Semiconductor Research Center, Wright State University.
    Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire2006In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 2, p. 705-707Article in journal (Refereed)
    Abstract [en]

    We have developed a virtual GaN substrate on sapphire based on a two-step growth method. By optimizing the growth scheme for the virtual substrate we have improved crystal quality and reduced interface roughness. Our Al0.22Ga0.78N/GaN HEMT structure grown on the optimized semi-insulating GaN virtual substrate, exhibits Hall mobilities as high as 1720 and 7350 cm(2)/Vs and sheet carrier concentrations of 8.4 x 1012 and 10.0 x 1012 cm(-2) at 300 K and 20 K, respectively The presence of good AlGaN/GaN interface quality and surface morphology is also substantiated by X-Ray reflectivity and Atomic Force Microscopy measurements. A simplified transport model is used to fit the experimental Hall mobility.

  • 2.
    Aggerstam, Thomas
    et al.
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Sjödin, Mikael
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE2006In: Physica Status Solidi C - Current Topics in Solid State Physics: Vol 3, No 6 / [ed] Hildebrandt S; Stutzmann M, 2006, Vol. 3, p. 2373-2376Conference paper (Refereed)
    Abstract [en]

    A simple AlGaN/GaN HEMT structure without any interlayer on Fe-doped GaN (GaN:Fe) grown by LP-MOVPE in one single run on sapphire is demonstrated. The surface segregation of Fe in GaN occurring during growth is identified. Hall measurements yield 2DEG (two dimensional electron gas) mobilities of 1700 and 10700 cm2/Vs and sheet carrier concentrations of 5.1×10 12 and 5.7×1012 cm-2 at 300 K and 20 K, respectively. Good pinch-off current-voltage (ID-VD) characteristics is observed from AlGaN/GaN HEMTs. A maximum drain current density of 0.6 A/mm and a peak extrinsic transconductance of 200 mS/mm have been observed. The HEMT structure yields very good device isolation as indicated by an isolation current of ≀1 nA at 20 V.

  • 3.
    Linnarsson, Margareta K.
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Janson, Martin S.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Nordell, Nils
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Wong-Leung, J.
    Schoner, A.
    Formation of precipitates in heavily boron doped 4H-SiC2006In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 252, no 15, p. 5316-5320Article in journal (Refereed)
    Abstract [en]

    Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 degrees C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B4C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 x 10(22) exp(-1.4 eV/k(B)T) cm(-3) over the studied temperature range.

  • 4. Lo, Ikai
    et al.
    Tsai, J. K.
    Gau, M. H.
    Chen, Y. L.
    Chang, Z. J.
    Wang, W. T.
    Chiang, J. C.
    Wang, K. R.
    Chen, C-N
    Aggerstam, Thomas
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect2006In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, no 24, p. 245325-Article in journal (Refereed)
    Abstract [en]

    The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. The lowest two subbands of the two-dimensional electron gas in the heterointerface were populated. After the low temperature illumination, the electron density increases from 11.99x10(12) cm(-2) to 13.40x10(12) cm(-2) for the first subband and from 0.66x10(12) cm(-2) to 0.94x10(12) cm(-2) for the second subband. The persistent photoconductivity effect (similar to 13% increase) is mostly attributed to the Fe-related deep-donor level in GaN layer. The second subband starts to populate when the first subband is filled at a density of 9.40x10(12) cm(-2). We obtained the energy separation between the first and second subbands to be 105 meV.

  • 5.
    Lourdudoss, Sebastian
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Barrios, C. A.
    Hakkarainen, Teppo
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Berrier, Audrey
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Anand, Srinivasan
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Aubert, Amandine
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Broeke, R. G.
    Cao, J.
    Chubun, N.
    Seo, S. -W
    Baek, J. -H
    Aihara, K.
    Pharn, Anh-Vu
    Ben Yoo, S. J.
    Avella, M.
    Jimenez, J.
    Heteroepitaxy and selective epitaxy for discrete and integrated devices2006In: 2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES, NEW YORK: IEEE , 2006, p. 309-311Conference paper (Refereed)
    Abstract [en]

    We present first results on heteroepitaxy of InP on silicon on insulator (SOI). We also demonstrate InP nanopillar fabrication by means of selective epitaxy. Selective epitaxy is also exploited to fabricate advanced photonic integrated devices for Optical Code Division Multiplex Access (OCDMA) networking applications.

  • 6.
    Ougazzaden, A.
    et al.
    Georgia Institute of Technology.
    Gautier, S.
    Université de Metz and SUPELEC.
    Aggerstam, Thomas
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Martin, J.
    Université de Metz and SUPELEC.
    Bouchaour, M.
    Université de Metz and SUPELEC.
    Baghdadli, T.
    Université de Metz and SUPELEC.
    Saad, S. Ould
    Georgia Tech-CNRS.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Maloufi, N.
    Laboratoire d’Etude des Textures et Application aux Matériaux, Metz.
    Djebbour, Z.
    Laboratoire de Génie Electrique de Paris.
    Jomard, F.
    Laboratoire de Physique des Solides et de Cristallogénèse, Université de Versailles-Saint-Quentin.
    Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications2007In: Quantum Sensing and Nanophotonic Devices IV / [ed] Razeghi M; Brown GJ, 2007, Vol. 6479, p. G4791-G4791Conference paper (Refereed)
    Abstract [en]

    The development of wide band gap semiconductors extends their applications in optoelectronics devices to the UV domain. Compact lasers and high sensitivity APD detectors in UV range are currently needed for different applications such as, purification, covert communication and real time detection of airborne pathogens. Until now, the full exploitation of these potential materials has been limited by the lack of suitable GaN substrates. Recently, a novel class of materials has been reported based on BGaN and BAlN, potentially reducing the crystal defect densities by orders of magnitude compared to existing wide band gap heterostructures. Characteristics of these new alloys are similar to those of AlGaN materials with the advantage that these can be lattice matched to AlN and SiC substrates. In addition, these materials offer the possibility of using quaternary BAlGaN alloys at Ultra Violet (UV) wavelengths and hence lead to more degrees of freedom in designing sophisticated device structures. In this paper we describe the MOVPE growth conditions used to incorporate boron in GaN and AlGaN. Detailed characterization and analysis in terms of structural and electrical properties are discussed.

  • 7.
    Ougazzaden, A.
    et al.
    Georgia Institute of Technology, Metz, France.
    Moudakir, T.
    University of Metz and Supelec, France.
    Aggerstam, Thomas
    KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
    Orsal, G.
    University of Metz and Supelec, France.
    Saivestrini, J. P.
    University of Metz and Supelec, France.
    Gautier, S.
    University of Metz and Supelec, France.
    Sirenko, A. A.
    Department of Physics, New Jersey Institute of Technology.
    GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE2008In: PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS: VOL 5, NO 6 / [ed] Palacios T.; Jena D., 2008, Vol. 5, p. 1565-1567Conference paper (Refereed)
    Abstract [en]

    We report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thickness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coincides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the residual compressive strain determined with respect to a freestanding GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively.

1 - 7 of 7
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