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  • 1. Liang, Y.
    et al.
    Peretti, R.
    Liverini, V.
    Süess, M. J.
    Vigneron, P. -B
    Wolf, J. M.
    Bonzon, C.
    Bismuto, A.
    Lourdudoss, Sebastian
    KTH, School of Engineering Sciences (SCI), Applied Physics, Semiconductor Materials, HMA.
    Metaferia, W.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Semiconductor Materials, HMA.
    Balaji, M.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Semiconductor Materials, HMA.
    Gini, E.
    Beck, M.
    Faist, J.
    Buried heterostructure photonic crystal quantum cascade laser: Towards 2D large-area single-mode operation2016In: Optics InfoBase Conference Papers, OSA - The Optical Society , 2016Conference paper (Refereed)
    Abstract [en]

    We demonstrate a buried-heterostructure photonic-crystal quantum cascade laser operating at room temperature. The large-area coherent lasing enabled an output peak power of 0.88 W at 263 K with single-mode behavior and narrow far field pattern.

  • 2.
    Lourdudoss, Sebastian
    et al.
    KTH, School of Engineering Sciences (SCI), Applied Physics, Semiconductor Materials, HMA.
    Junesand, Carl
    Kataria, Himanshu
    Metaferia, Wondwosen
    Omanakuttan, Giriprasanth
    KTH, School of Engineering Sciences (SCI), Applied Physics, Semiconductor Materials, HMA.
    Sun, Yan-Ting
    KTH, School of Engineering Sciences (SCI), Applied Physics, Semiconductor Materials, HMA.
    Wang, Zhechao
    Olsson, Fredrik
    Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications2017In: SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XIX / [ed] Eldada, LA Lee, EH He, S, 2017, article id UNSP 1010705Conference paper (Refereed)
    Abstract [en]

    We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.

  • 3. Prajapati, C. S.
    et al.
    Visser, Dennis
    KTH, School of Engineering Sciences (SCI), Applied Physics, Semiconductor Materials, HMA.
    Anand, Srinivasan
    KTH, School of Engineering Sciences (SCI), Applied Physics.
    Bhat, N.
    Honeycomb type ZnO nanostructures for sensitive and selective CO detection2017In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 252, p. 764-772Article in journal (Refereed)
    Abstract [en]

    Excellent sensing performance for CO gas is demonstrated using inexpensive sensor devices based on honeycomb type ZnO nanostructures, fabricated by colloidal lithography and lift-off process. This newly proposed method for gas sensors is cost effective and provides significant enhancement of both sensitivity and selectivity of CO detection. Honeycomb type ZnO nano films developed in ∼21 nm ZnO layer consisting of 1 μm period hexagonal lattice of air-holes with diameter varying from ∼600–900 nm are investigated for CO sensing. These structures are fabricated by a combination of self-assembly of polystyrene (PS) spheres, their size reduction by oxygen plasma and magnetron-sputtering of ZnO followed by PS mask removal. The hole diameter and hence the width of ZnO honeycomb walls are determined by size reduction of PS spheres. Fabricated ZnO honeycomb type sensors show superior sensing performance compared to planar ZnO films, and response as high as ∼81.2% at 300 °C for a 3 ppm CO with a detection resolution of 500 ppb and response and recovery times of ∼180 and ∼210 s, respectively, were obtained. The repeatability of the observed results is confirmed and in addition, the CO selectivity is shown for gas mixtures consisting of CH4, H2S, CO2, NO2, SO2 and H2. The developed nanostructuring method is generic and can be adapted for improving performance of other metal-oxide based gas sensors.

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