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Publikasjoner (9 av 9) Visa alla publikasjoner
Gao, J., Chang, J., Lopez-Rodriguez, B., Zadeh, I. E., Zwiller, V. & Elshaari, A. W. (2025). From pixels to camera: scaling superconducting nanowire single-photon detectors for imaging at the quantum-limit. Nano Convergence, 12(1), Article ID 49.
Åpne denne publikasjonen i ny fane eller vindu >>From pixels to camera: scaling superconducting nanowire single-photon detectors for imaging at the quantum-limit
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2025 (engelsk)Inngår i: Nano Convergence, E-ISSN 2196-5404, Vol. 12, nr 1, artikkel-id 49Artikkel, forskningsoversikt (Fagfellevurdert) Published
Abstract [en]

Superconducting nanowire single-photon detectors (SNSPDs) have emerged as essential devices that push the boundaries of photon detection with unprecedented sensitivity, ultrahigh timing precision, and broad spectral response. Recent advancements in materials engineering, superconducting electronics integration, and cryogenic system design are enabling the evolution of SNSPDs from single-pixel detectors toward scalable arrays and large-format single-photon time tagging cameras. This perspective article surveys the rapidly evolving technological landscape underpinning this transition, focusing on innovative superconducting materials, advanced multiplexed read-out schemes, and emerging cryo-compatible electronics. We highlight how these developments are set to profoundly impact diverse applications, including quantum communication networks, deep-tissue biomedical imaging, single-molecule spectroscopy, remote sensing with unprecedented resolution, and the detection of elusive dark matter signals. By critically discussing both current challenges and promising solutions, we aim to articulate a clear, coherent vision for the next generation of SNSPD-based quantum imaging systems.

sted, utgiver, år, opplag, sider
Springer Nature, 2025
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-372661 (URN)10.1186/s40580-025-00515-z (DOI)001601039300001 ()41137886 (PubMedID)2-s2.0-105019977740 (Scopus ID)
Merknad

QC 20251113

Tilgjengelig fra: 2025-11-13 Laget: 2025-11-13 Sist oppdatert: 2025-11-13bibliografisk kontrollert
Li, Z., Lopez-Rodriguez, B., Sharma, N., van der Kolk, R., Scholte, T., Smedes, H., . . . Zadeh, I. E. (2025). Heterogeneous integration of silicon nitride and amorphous silicon carbide photonics. APL Photonics, 10(10), Article ID 106116.
Åpne denne publikasjonen i ny fane eller vindu >>Heterogeneous integration of silicon nitride and amorphous silicon carbide photonics
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2025 (engelsk)Inngår i: APL Photonics, E-ISSN 2378-0967, Vol. 10, nr 10, artikkel-id 106116Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order nonlinearities. Furthermore, a-SiC can be easily deposited via CMOS-compatible chemical vapor deposition (CVD) techniques, allowing for precise thickness control and adjustable material properties on arbitrary substrates. Silicon nitride (SiN) is an industrially well-established and well-matured platform, which exhibits ultra-low propagation loss, but it is suboptimal for high-density reconfigurable photonics due to the large minimum bending radius and constrained tunability. In this work, we monolithically combine the a-SiC with SiN photonics, leveraging the merits of both platforms, and achieve the a-SiC/SiN heterogeneous integration with an on-chip interconnection loss of ( 0.28<sup>+0.44</sup><inf>−0.28</inf>) dB and integration density increment exceeding 4444-fold. By implementing active devices on the a-SiC, we achieve 27 times higher thermo-optic tuning efficiency, with respect to the SiN photonic platform. In addition, the a-SiC/SiN platform gives the flexibility to choose the optimal fiber-to-chip coupling strategy depending on the interfacing platform, with efficient side-coupling on SiN and grating-coupling on the a-SiC platform. The proposed a-SiC/SiN photonic platform can foster versatile applications in programmable and quantum photonics, nonlinear optics, and beyond.

sted, utgiver, år, opplag, sider
AIP Publishing, 2025
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-372488 (URN)10.1063/5.0285619 (DOI)2-s2.0-105018952036 (Scopus ID)
Merknad

QC 20251107

Tilgjengelig fra: 2025-11-07 Laget: 2025-11-07 Sist oppdatert: 2025-11-07bibliografisk kontrollert
Staffas, T., Cleveborg, J., Gao, J., Elshaari, A. W. & Zwiller, V. (2025). Thermal light with enhanced oscillating bunching in field-tested photon-counting LIDAR. Nature Communications, 17(1), Article ID 134.
Åpne denne publikasjonen i ny fane eller vindu >>Thermal light with enhanced oscillating bunching in field-tested photon-counting LIDAR
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2025 (engelsk)Inngår i: Nature Communications, E-ISSN 2041-1723, Vol. 17, nr 1, artikkel-id 134Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Traditional Light Detection and Ranging (LIDAR) systems rely on a modulated light source to encode information in the probe signal to measure distances. Alternatively, thermal LIDAR uses non-modulated thermal sources of bunched light. In this work, we demonstrate a bunched photon source at telecom wavelength, incorporated in a photon-counting LIDAR system, which determines distances by measuring the second-order correlation. The source is a sub-threshold laser spectrally filtered to extend coherence time, producing an oscillating g(2) curve with an enhanced bunching peak. Utilizing this oscillating bunching increases the signal-to-noise ratio and decreases the number of correlation events required to perform a measurement. This system achieves 2 ps resolution in both fiber-based and free-space measurements with up to 65 dB attenuation and ranges up to 87 km in optical fibers. Our approach demonstrates the possibility of increasing the bunching of classical light sources and improving their usability for LIDAR.

sted, utgiver, år, opplag, sider
Springer Nature, 2025
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-378117 (URN)10.1038/s41467-025-67830-1 (DOI)001655544200001 ()41462028 (PubMedID)2-s2.0-105026902213 (Scopus ID)
Merknad

QC 20260317

Tilgjengelig fra: 2026-03-17 Laget: 2026-03-17 Sist oppdatert: 2026-03-17bibliografisk kontrollert
Descamps, T., Schetelat, T., Gao, J., Poole, P. J., Dalacu, D., Elshaari, A. W. & Zwiller, V. (2024). Acoustic Modulation of Individual Nanowire Quantum Dots Integrated into a Hybrid Thin-Film Lithium Niobate Photonic Platform. Nano Letters, 24(40), 12493-12500
Åpne denne publikasjonen i ny fane eller vindu >>Acoustic Modulation of Individual Nanowire Quantum Dots Integrated into a Hybrid Thin-Film Lithium Niobate Photonic Platform
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2024 (engelsk)Inngår i: Nano Letters, ISSN 1530-6984, E-ISSN 1530-6992, Vol. 24, nr 40, s. 12493-12500Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Surface acoustic waves are a powerful tool for controlling quantum systems, including quantum dots (QDs), where the oscillating strain field can modulate the emission wavelengths. We integrate InAsP/InP nanowire QDs onto a thin-film lithium niobate platform and embed them within Si3N4-loaded waveguides. We achieve a 0.70 nm peak-to-peak wavelength modulation at 13 dBm using a single focused interdigital transducer (FIDT) operating at 400 MHz, and we double this amplitude to 1.4 nm by using two FIDTs as an acoustic cavity. Additionally, we independently modulate two QDs with an initial wavelength difference of 0.5 nm, both integrated on the same chip. We show that their modulated emissions overlap, demonstrating the potential to bring them to a common emission wavelength after spectral filtering. This local strain-tuning represents a significant step toward generating indistinguishable single photons from remote emitters heterogeneously integrated on a single chip, advancing on-chip quantum information processing with multiple QDs.

sted, utgiver, år, opplag, sider
American Chemical Society (ACS), 2024
Emneord
integrated photonics, quantum dots, single-photon source, surface acoustic waves, thin-film lithium niobate
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-366717 (URN)10.1021/acs.nanolett.4c03402 (DOI)001324201300001 ()39324539 (PubMedID)2-s2.0-85205903445 (Scopus ID)
Merknad

QC 20250709

Tilgjengelig fra: 2025-07-09 Laget: 2025-07-09 Sist oppdatert: 2025-07-09bibliografisk kontrollert
Xu, Z.-S., Gao, J., Iovan, A., Khaymovich, I. M., Zwiller, V. & Elshaari, A. W. (2024). Observation of reentrant metal-insulator transition in a random-dimer disordered SSH lattice. Npj Nanophotonics, 1(1), Article ID 8.
Åpne denne publikasjonen i ny fane eller vindu >>Observation of reentrant metal-insulator transition in a random-dimer disordered SSH lattice
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2024 (engelsk)Inngår i: Npj Nanophotonics, E-ISSN 2948-216X, Vol. 1, nr 1, artikkel-id 8Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The interrelationship between localization, quantum transport, and disorder has remained a fascinating focus in scientific research. Traditionally, it has been widely accepted in the physics community that in one-dimensional systems, as disorder increases, localization intensifies, triggering a metal-insulator transition. However, a recent theoretical investigation [Phys. Rev. Lett. 126, 106803] has revealed that the interplay between dimerization and disorder leads to a reentrant localization transition, constituting a remarkable theoretical advancement in the field. Here, we present the first experimental observation of reentrant localization using an experimentally friendly model, a photonic SSH lattice with random-dimer disorder, achieved by incrementally adjusting synthetic potentials. In the presence of correlated on-site potentials, certain eigenstates exhibit extended behavior following the localization transition as the disorder continues to increase. We directly probe the wave function in disordered lattices by exciting specific lattice sites and recording the light distribution. This reentrant phenomenon is further verified by observing an anomalous peak in the normalized participation ratio. Our study enriches the understanding of transport in disordered mediums and accentuates the substantial potential of integrated photonics for the simulation of intricate condensed matter physics phenomena.

sted, utgiver, år, opplag, sider
Springer Nature, 2024
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-369056 (URN)10.1038/s44310-024-00008-7 (DOI)38854858 (PubMedID)2-s2.0-105010861148 (Scopus ID)
Merknad

QC 20250916

Tilgjengelig fra: 2025-09-16 Laget: 2025-09-16 Sist oppdatert: 2025-11-03bibliografisk kontrollert
Gao, J., Xu, Z.-S., Yang, Z., Zwiller, V. & Elshaari, A. W. (2024). Quantum topological photonics with special focus on waveguide systems. Npj Nanophotonics, 1(1), Article ID 34.
Åpne denne publikasjonen i ny fane eller vindu >>Quantum topological photonics with special focus on waveguide systems
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2024 (engelsk)Inngår i: Npj Nanophotonics, E-ISSN 2948-216X, Vol. 1, nr 1, artikkel-id 34Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In the burgeoning field of quantum topological photonics, waveguide systems play a crucial role. This perspective delves into the intricate interplay between photonic waveguides and topological phenomena, underscoring the theoretical underpinnings of topological insulators and their photonic manifestations. We highlight key milestones and breakthroughs in topological photonics using waveguide systems, alongside an in-depth analysis of their fabrication techniques and tunability. The discussion includes the technological advancements and challenges, limitations of current methods, and potential strategies for improvement. This perspective also examines the quantum states of light in topological waveguides, where the confluence of topology and quantum optics promises robust avenues for quantum communication and computing. Concluding with a forward-looking view, we aim to inspire new research and innovation in quantum topological photonics, highlighting its potential for the next generation of photonic technologies.

sted, utgiver, år, opplag, sider
Springer Nature, 2024
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-369515 (URN)10.1038/s44310-024-00034-5 (DOI)2-s2.0-105011076200 (Scopus ID)
Merknad

QC 20250911

Tilgjengelig fra: 2025-09-11 Laget: 2025-09-11 Sist oppdatert: 2025-10-14bibliografisk kontrollert
Descamps, T., Schetelat, T., Gao, J., Poole, P. J., Dalacu, D., Elshaari, A. W. & Zwiller, V. (2023). Dynamic Strain Modulation of a Nanowire Quantum Dot Compatible with a Thin-Film Lithium Niobate Photonic Platform. ACS Photonics, 10(10), 3691-3699
Åpne denne publikasjonen i ny fane eller vindu >>Dynamic Strain Modulation of a Nanowire Quantum Dot Compatible with a Thin-Film Lithium Niobate Photonic Platform
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2023 (engelsk)Inngår i: ACS Photonics, E-ISSN 2330-4022, Vol. 10, nr 10, s. 3691-3699Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The integration of indistinguishable single photon sources in photonic circuits is a major prerequisite for on-chip quantum applications. Among the various high-quality sources, nanowire quantum dots can be efficiently coupled to optical waveguides because of their preferred emission direction along their growth direction. However, local tuning of the emission properties remains challenging. In this work, we transfer a nanowire quantum dot onto a bulk lithium niobate substrate and show that its emission can be dynamically tuned by acousto-optical coupling with surface acoustic waves. The purity of the single photon source is preserved during the strain modulation. We further demonstrate that the transduction is maintained even with a SiO2 encapsulation layer deposited on top of the nanowire acting as the cladding of a photonic circuit. Based on these experimental findings and numerical simulations, we introduce a device architecture consisting of a nanowire quantum dot efficiently coupled to a thin-film lithium niobate rib waveguide and strain-tunable by surface acoustic waves.

sted, utgiver, år, opplag, sider
American Chemical Society (ACS), 2023
Emneord
quantum dots, nanowire, single photon source, surface acoustic waves, lithium niobate, integratedphotonics
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-339329 (URN)10.1021/acsphotonics.3c00821 (DOI)001083932000001 ()37869556 (PubMedID)2-s2.0-85174969326 (Scopus ID)
Merknad

QC 20231107

Tilgjengelig fra: 2023-11-07 Laget: 2023-11-07 Sist oppdatert: 2023-11-07bibliografisk kontrollert
Chang, J., Gao, J., Esmaeil Zadeh, I., Elshaari, A. W. & Zwiller, V. (2023). Nanowire-based integrated photonics for quantum information and quantum sensing. Nanophotonics, 12(3), 339-358
Åpne denne publikasjonen i ny fane eller vindu >>Nanowire-based integrated photonics for quantum information and quantum sensing
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2023 (engelsk)Inngår i: Nanophotonics, ISSN 2192-8606, E-ISSN 2192-8614, Vol. 12, nr 3, s. 339-358Artikkel, forskningsoversikt (Fagfellevurdert) Published
Abstract [en]

At the core of quantum photonic information processing and sensing, two major building pillars are single-photon emitters and single-photon detectors. In this review, we systematically summarize the working theory, material platform, fabrication process, and game-changing applications enabled by state-of-the-art quantum dots in nanowire emitters and superconducting nanowire single-photon detectors. Such nanowire-based quantum hardware offers promising properties for modern quantum optics experiments. We highlight several burgeoning quantum photonics applications using nanowires and discuss development trends of integrated quantum photonics. Also, we propose quantum information processing and sensing experiments for the quantum optics community, and future interdisciplinary applications.

sted, utgiver, år, opplag, sider
Walter de Gruyter GmbH, 2023
Emneord
epitaxial quantum dots, nanowires, photonics integrated circuits, quantum information processing, quantum sensing, superconducting nanowire single photon detector
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-332166 (URN)10.1515/nanoph-2022-0652 (DOI)000920715700001 ()2-s2.0-85146644715 (Scopus ID)
Merknad

QC 20230721

Tilgjengelig fra: 2023-07-21 Laget: 2023-07-21 Sist oppdatert: 2025-08-28bibliografisk kontrollert
Gao, J., Xu, Z.-S., Smirnova, D. A., Leykam, D., Gyger, S., Zhou, W.-H., . . . Elshaari, A. W. (2022). Observation of Anderson phase in a topological photonic circuit. Physical Review Research, 4(3), Article ID 033222.
Åpne denne publikasjonen i ny fane eller vindu >>Observation of Anderson phase in a topological photonic circuit
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2022 (engelsk)Inngår i: Physical Review Research, E-ISSN 2643-1564, Vol. 4, nr 3, artikkel-id 033222Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Disordered systems play a central role in condensed matter physics, quantum transport, and topological photonics. It is commonly believed that a topological nontrivial phase would turn into a trivial phase where the transport vanishes under the effect of Anderson localization. Recent studies predict a counterintuitive result, that adding disorder to the trivial band structure triggers the emergence of protected edge states, the so-called topological Anderson phase. Here, we experimentally observe such a topological Anderson phase in a CMOS-compatible nanophotonic circuit, which implements the Su-Schrieffer-Heeger (SSH) model with incommensurate disorder in the intercell coupling amplitudes. The existence of the Anderson phase is verified by the spectral method, based on the continuous detection of the nanoscale light dynamics at the edge. Our results demonstrate the inverse transition between distinct topological phases in the presence of disorder, as well as offering a single-shot measurement technique to study the light dynamics in nanophotonic systems.

sted, utgiver, år, opplag, sider
American Physical Society (APS), 2022
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-320241 (URN)10.1103/PhysRevResearch.4.033222 (DOI)000861109600008 ()2-s2.0-85138978992 (Scopus ID)
Merknad

QC 20221019

Tilgjengelig fra: 2022-10-19 Laget: 2022-10-19 Sist oppdatert: 2024-03-15bibliografisk kontrollert
Organisasjoner
Identifikatorer
ORCID-id: ORCID iD iconorcid.org/0009-0009-5417-9599