Several scientific issues concerning the latest generation read heads for magnetic storage devices, based on CoFeB/MgO/CoFeBmagnetic tunnel junctions (MTJs) are known to be controversial, including such fundamental questions as to the behavior and the role of B in optimizing the physical properties of these devices. Quantitatively establishing the internal structures of several such devices with different annealing conditions using hard x-ray photoelectron spectroscopy, we resolve these controversies and establish that the B diffusion is controlled by the capping Ta layer, though Ta is physically separated from the layer with B by several nanometers. While explaining this unusual phenomenon, we also provide insight into why the tunneling magnetoresistance (TMR) is optimized at an intermediate annealing temperature, relating it to B diffusion, coupled with our studies based on x-ray diffraction and magnetic studies.

In a nano-contact Co/Cu/NiFe spin torque oscillator, mode-jumping between up to three frequencies within 22.5-24.0 GHz is electrically observed in the time domain. The measurements reveal toggling between two states with differing oscillation amplitude, of which the low-amplitude state is further divided into two rapidly alternating modes. Analysis of the mode dwell time statistics and the total time spent in each mode is carried out, and it is found that in both aspects the balance between the modes is greatly altered with the DC drive current.

Spin-torque oscillators (STO) hold promise for multi-octave frequency operation at very high frequencies and modulation speeds. STO operation is typically demonstrated using large electromagnets and probe stations, and has so far not been packaged with a portable form factor. For STOs to be utilized in real applications, a smaller packaging solution is needed. We integrate STOs with packages originally developed for YIG oscillators, modified to incorporate permanent magnets and to achieve a compact portable oscillator based on the STO.

We demonstrate spin transfer torque (STT) switching in multi-nanocontact STT devices fabricated using hole mask colloidal lithography. We also study the STT device resistance and switching properties as a function of applied magnetic field and nanocontact current. At low nanocontact current, magnetoresistance measurements show sharp, single-step switching at low switching fields. When the current is increased, the switching becomes multistep, and the switching field increases dramatically. We explain these results as arising from a transition from a predominantly single domain like switching to switching involving a vortex state. Micromagnetic simulations corroborate this picture, indicating that a single magnetic vortex nucleates in between the nanocontacts through the influence from the total Oersted field generated by the nanocontact ensemble.

We demonstrate the fabrication of metallic nano-contacts on magnetic multilayers using a Hole Mask Colloidal Lithography technique (HCL) based on Polystyrene spheres. The method applies PMMA as a sacrificial layer upon which a hole pattern is formed after liftoff of the spheres. An Au layer functions as a hard mask for the PMMA and the PMMA subsequently masks the SiO(2) during its etching. The resulting pattern is a dense collection of randomly located nano-holes through a SiO(2) film. Final devices are made using traditional photolithography to define a 600 nm circular mesa with about 3 to 4 nano-holes per device, and patterning of a metallic top contact.

We demonstrate pseudo spin valves (PSVs) with a (112)-textured D022 Mn2.3-2.4Ga (MnGa) tilted magnetization fixed layer and an in-plane CoFe free layer. Single D022 MnGa films exhibit a small magnetoresistance (MR) typically observed in metals. In MnGa/Cu/CoFe PSVs, a transition from a negative (-0.08%) to positive (3.88%) MR is realized by introducing a thin spin polarizing CoFe insertion layer at the MnGa/Cu interface and tailoring the MnGa thickness. Finally, the exchange coupling between the MnGa and CoFe insertion layer is studied using a first-order reversal curve technique.