Angle-resolved photoemission spectroscopy (ARPES) is a well-established experimental technique that allows probing of the electronic structure of quantum materials using relatively high-energy photons. ARPES has been extensively used to study important classes of materials such as topological insulators, high-temperature superconductors, two-dimensional materials or interface systems. Although the technique was originally developed over 60 years ago, the last decade has witnessed significant advancements in instrumentation. In this review, we survey recent progress in ARPES, with a focus on developments in novel light sources and electron detection methods, which enable the expansion of ARPES into spin-, time-, or space-resolved domains. Important examples of ARPES results are presented, together with an outlook for the field.

Condensed matter physics has often provided a platform for investigating the interplay between particles and fields in cases that have not been observed in high-energy physics. Here, using angle-resolved photoemission spectroscopy, we provide an example of this by visualizing the electronic structure of a noncentrosymmetric magnetic Weyl semimetal candidate NdAlSi in both the paramagnetic and ferrimagnetic states. We observe surface Fermi arcs and bulk Weyl fermion dispersion as well as the emergence of new Weyl fermions in the ferrimagnetic state. Our results establish NdAlSi as a magnetic Weyl semimetal and provide an experimental observation of ferrimagnetic regulation of Weyl fermions in condensed matter.

Controlling the carrier density and band alignment in three-dimensional topological insulators remains a central challenge due to intrinsic defect-induced n-type doping. In Bi2Se3, selenium vacancies typically shift the Fermi level into the bulk conduction band, complicating access to the intrinsic surface transport regime. Here, we investigate the effect of chlorine incorporation on the electronic structure of Bi₂Se₃ single crystals using angle-resolved photoemission spectroscopy (ARPES). Across nominal Cl concentrations of 0.25%-1.0%, the topological surface state remains gapless and well-defined, while the band structure shifts systematically toward higher binding energy, indicating enhanced electron doping. Quantitative analysis of the Fermi surface areas reveals an increase in the enclosed momentum-space area of both the topological surface state and conduction-band-derived states with increasing Cl content. Hall measurements further confirm an increase in bulk carrier density, consistent with donor behavior of Cl incorporation. Time-dependent ARPES measurements tracking the surface electronic evolution after cleaving demonstrate a significantly reduced energy shift under prolonged XUV exposure in Cl-doped samples compared to pristine Bi₂Se₃, indicating reduced sensitivity to adsorption-induced band bending and suggesting a modification of the near-surface defect landscape. Despite the increased carrier density, the bulk band gap remains essentially unchanged, while the relative energy position of the Dirac point within the gap evolves modestly with Cl concentration.