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Sarmast Ghahfarokhi, ShahriarORCID iD iconorcid.org/0000-0002-2167-4616
Publications (8 of 8) Show all publications
Abbas, K., Gandla, L. P., Sarmast Ghahfarokhi, S., Kostov, K. S. & Nee, H.-P. (2025). Autonomous Gate Drivers for TCM-Based Soft-Switched Converters: Design Approach and Experimental Validation. IEEE Transactions on Industrial Electronics
Open this publication in new window or tab >>Autonomous Gate Drivers for TCM-Based Soft-Switched Converters: Design Approach and Experimental Validation
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2025 (English)In: IEEE Transactions on Industrial Electronics, ISSN 0278-0046, E-ISSN 1557-9948Article in journal (Other academic) Epub ahead of print
Abstract [en]

This paper presents a soft-switched buck converter using Autonomous Gate Drivers (AGDs) for power electronic converters. Operating at a 400 V DC-link, typical of Electric Vehicles (EVs) and industrial systems, the converter achieves Zero Voltage Switching (ZVS) during turn-on and turn-off via AGD circuitry and optimized snubber capacitance. Operating in Triangular Current Mode (TCM), the converter utilizes inductor current ripple to enable ZVS. Experimental results confirm reliable soft-switching and suppression of voltage overshoot under realistic conditions. While the validation uses a buck converter, the proposed AGDs are directly applicable to more complex converters, including three-phase inverters with sinusoidal reference currents, relevant to EVs, renewable energy, and industrial drives. This work demonstrates a scalable solution for reducing switching losses and improving efficiency in advanced high-voltage converters.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2025
Keywords
Autonomous gate driver (AGD), electric vehicles (EVs), zero-voltage switching (ZVS), soft switching, triangular current mode (TCM), snubber capacitance, high-efficiency power conversion, SiC MOSFETs, traction inverter
National Category
Engineering and Technology
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-370475 (URN)
Funder
Swedish Energy Agency, 44833-1/P2017-90020
Available from: 2025-09-25 Created: 2025-09-25 Last updated: 2025-09-26
Abbas, K., Chatterjee, B., Rey, A. C., Sarmast Ghahfarokhi, S., Ayaz, E., Hiller, M. & Nee, H.-P. (2025). Design of a High-Power Filter Inductor for Variable-Switching-Frequency TCM-Based ZVS Inverters in EV Drive Systems. IEEE Open Journal of Power Electronics
Open this publication in new window or tab >>Design of a High-Power Filter Inductor for Variable-Switching-Frequency TCM-Based ZVS Inverters in EV Drive Systems
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2025 (English)In: IEEE Open Journal of Power Electronics, ISSN 2644-1314Article in journal, News item (Refereed) Submitted
Abstract [en]

The utilization of soft-switching inverters is essential for achieving high efficiency and low electromagnetic interference (EMI) in electric vehicle (EV) drive systems. However, inductor design for such converters presents significant challenges. In triangular current mode (TCM)-based zero voltage switching (ZVS) inverters, inductors experience large current ripple and variable switching frequency, leading to excessive core and winding losses. This paper presents a design methodology for a high-power filter inductor specifically suited for TCM-based ZVS inverters. A ferrite pot core was selected, and three winding techniques—Litz wire, copper foil, and solid copper wire—were evaluated. The inductance of the three inductors was determined both experimentally and via simulation using FEMM and ANSYS, while power losses were estimated using FEM-based simulations in ANSYS. Experimental determination of 3C91 core loss coefficients was also performed. The optimal configuration required two parallel inductors per phase, resulting in a final three-phase inverter design with six inductors, each 57 mm high and 66 mm in diameter. By integrating experimental measurements with simulation-based loss estimation, the proposed approach reduces core and copper losses, improves thermal management, and enhances power density, making it suitable for next-generation EV powertrains and renewable energy conversion systems.

Place, publisher, year, edition, pages
Piscataway, NJ, USA: IEEE, 2025
National Category
Engineering and Technology
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-370482 (URN)
Funder
Swedish Energy Agency, 44833-1
Note

QC 20250926

Available from: 2025-09-25 Created: 2025-09-25 Last updated: 2025-09-26Bibliographically approved
Sarmast Ghahfarokhi, S., Singh, B. P., Ayaz, E., Nee, H.-P. & Norrga, S. (2025). Reliability Studies on SiC MOSFET Modules Following a Partial Failure Incident. In: Proceedings - 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2025: . Paper presented at 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2025, Utrecht, Netherlands, Kingdom of the, Apr 6 2025 - Apr 9 2025. Institute of Electrical and Electronics Engineers (IEEE)
Open this publication in new window or tab >>Reliability Studies on SiC MOSFET Modules Following a Partial Failure Incident
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2025 (English)In: Proceedings - 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2025, Institute of Electrical and Electronics Engineers (IEEE) , 2025Conference paper, Published paper (Refereed)
Abstract [en]

This study analyzes the sequential failure and remaining useful life (RUL) of a multi-chip power module (MCPM) using finite element (FE) simulation, an empirical lifetime model, and recursive deconvolution. The FE model captures electro-thermal interactions, while the empirical model estimates failure probabilities from power cycling test data. The deconvolution method refines the probability density function of the first failure, providing deeper insights into degradation trends. Results show that the first die in an MCPM can fail significantly earlier than the last, with temperature imbalances contributing to this variation. Despite early failures, the system can continue operating with minor thermal impacts. These findings highlight the need for adaptive failure management and improved thermal design to enhance reliability and system life time.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2025
Keywords
Empirical lifetime model, Finite element analysis, Multichip power module, reliability, Remaining useful life prediction
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-368606 (URN)10.1109/EuroSimE65125.2025.11006626 (DOI)2-s2.0-105007417452 (Scopus ID)
Conference
26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2025, Utrecht, Netherlands, Kingdom of the, Apr 6 2025 - Apr 9 2025
Note

Part of ISBN 9798350393002

QC 20250822

Available from: 2025-08-22 Created: 2025-08-22 Last updated: 2025-08-22Bibliographically approved
Singh, B. P., Sarmast Ghahfarokhi, S., Kostov, K., Nee, H.-P. & Norrga, S. (2024). Analysis of the Thermo-mechanical Performance of Double-Sided Cooled Power Modules. In: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2024: . Paper presented at 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2024, Catania, Italy, Apr 7 2024 - Apr 10 2024. Institute of Electrical and Electronics Engineers (IEEE)
Open this publication in new window or tab >>Analysis of the Thermo-mechanical Performance of Double-Sided Cooled Power Modules
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2024 (English)In: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2024, Institute of Electrical and Electronics Engineers (IEEE) , 2024Conference paper, Published paper (Refereed)
Abstract [en]

Double-sided cooled (DSC) power semiconductor modules have garnered increased interest over the past decade due to their ability to offer an additional path for heat removal, facilitating higher power density operation while reducing junction temperatures and thermal stresses. Nevertheless, when operating at similar junction temperatures, DSC modules might exhibit elevated thermo-mechanical stress compared to single-sided cooled (SSC) modules. This increase can be attributed to restricted vertical movement within the DSC modules. Furthermore, the integration of various spacers within the DSC modules, which enable bond wire connections to gate terminals, can significantly influence both the thermal performance and induced thermo-mechanical stresses. Depending on the materials used in the spacer, the thermal performance and thermo-mechanical stresses inside the module can vary. In this study, we have first analysed the thermal performance of the DSC power modules employing different spacers. Following that, we have also performed thermo-mechanical analysis in different solder layers. Finally, fatigue analysis is done to demonstrate the weakest solder layer inside the package.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2024
Keywords
double-sided cool, finite element, power module, reliability
National Category
Mechanical Engineering
Identifiers
urn:nbn:se:kth:diva-346144 (URN)10.1109/EuroSimE60745.2024.10491556 (DOI)2-s2.0-85191151239 (Scopus ID)
Conference
25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2024, Catania, Italy, Apr 7 2024 - Apr 10 2024
Note

QC 20240507

Part of ISBN 979-8-3503-9363-7

Available from: 2024-05-03 Created: 2024-05-03 Last updated: 2024-05-07Bibliographically approved
Sarmast Ghahfarokhi, S., Ayaz, E., Jackson, M., Singh, B. P., Norrga, S., Nee, H.-P. & Leksell, M. (2024). Deskewing Method for Double Pulse Test and Loss Calculation in High-Power SiC Modules. In: ECCE Europe 2024 - Energy Conversion Congress and Expo Europe, Proceedings: . Paper presented at 2024 Energy Conversion Congress and Expo Europe, ECCE Europe 2024, Darmstadt, Germany, September 2-6, 2024. Institute of Electrical and Electronics Engineers (IEEE)
Open this publication in new window or tab >>Deskewing Method for Double Pulse Test and Loss Calculation in High-Power SiC Modules
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2024 (English)In: ECCE Europe 2024 - Energy Conversion Congress and Expo Europe, Proceedings, Institute of Electrical and Electronics Engineers (IEEE) , 2024Conference paper, Published paper (Refereed)
Abstract [en]

Accurate estimation of losses in high-power traction converters is essential for an effective design. Precise estimation of switching and conduction losses is crucial for this purpose. In this paper, the widely recognized Double Pulse Test (DPT) is employed to determine these losses. However, time-shift errors and misalignments in measurements can lead to significant deviations in loss estimation of the actual setup. This paper introduces a postprocessing method aimed at mitigating time-shift and misalignment issues in voltage and current waveforms. The proposed method is validated through simulation, demonstrating its effectiveness in improving the accuracy of loss estimation for high-power traction converters.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2024
Keywords
Deskewing, Double-pulse test, Signal processing, Silicon Carbide (SiC), Switching loss estimation
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-367342 (URN)10.1109/ECCEEurope62508.2024.10751827 (DOI)2-s2.0-85211794301 (Scopus ID)
Conference
2024 Energy Conversion Congress and Expo Europe, ECCE Europe 2024, Darmstadt, Germany, September 2-6, 2024
Note

Part of ISBN 9798350364446

QC 20250716

Available from: 2025-07-16 Created: 2025-07-16 Last updated: 2025-07-16Bibliographically approved
Ayaz, E., Jackson, M., Sarmast Ghahfarokhi, S., Singh, B., Norrga, S. & Nee, H.-P. (2024). Evaluation of Possible Traction Inverter Topologies for Heavy-Duty Electric Vehicles. In: Proceedings 9th IEEE Southern Power Electronics Conference, SPEC 2024: . Paper presented at 9th IEEE Southern Power Electronics Conference, SPEC 2024, Brisbane, Australia, Dec 2 2024 - Dec 5 2024. Institute of Electrical and Electronics Engineers (IEEE)
Open this publication in new window or tab >>Evaluation of Possible Traction Inverter Topologies for Heavy-Duty Electric Vehicles
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2024 (English)In: Proceedings 9th IEEE Southern Power Electronics Conference, SPEC 2024, Institute of Electrical and Electronics Engineers (IEEE) , 2024Conference paper, Published paper (Refereed)
Abstract [en]

This paper evaluates traction inverters for heavy-duty electric vehicles, focusing on key criteria such as raised power ratings with improved efficiency and power densities. Boosted voltage and current levels are required to achieve higher power levels and provide megawatt charging system solutions, which results in the need to utilize new semiconductors and topologies. In this study, 3-Level neutral point clamped (3L- NPC) and 2-Level 6-phase (2L-6Ph) voltage source inverters (VSIs) are evaluated and compared to conventional 2-Level 3-phase (2L-3Ph). The comparison uses figure-of-merit parameters and a virtual prototyping method based on several performance indices, such as efficiency, power density, output harmonic quality, and reliability. Then, efficiency maps are acquired to find out the sweet operating points, minimizing losses. Results show that the 3L-NPC VSI system provides a higher switching frequency, which also shrinks the size of the passive elements and cooling system. Although the 3L-NPC inverter requires additional power switches and isolated gate drivers, its estimated performance outweighs such reliability and cost-dependent issues. Therefore, this study concludes that multi-level inverter topologies hold promise for high-voltage, high-power traction drives.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2024
Keywords
3 level neutral point clamped inverter, conduction losses, switching losses, traction inverter
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering Vehicle and Aerospace Engineering Energy Systems
Identifiers
urn:nbn:se:kth:diva-362228 (URN)10.1109/SPEC62217.2024.10893180 (DOI)001445813800061 ()2-s2.0-105001111098 (Scopus ID)
Conference
9th IEEE Southern Power Electronics Conference, SPEC 2024, Brisbane, Australia, Dec 2 2024 - Dec 5 2024
Note

Part of ISBN 9798350351156

QC 20250415

Available from: 2025-04-09 Created: 2025-04-09 Last updated: 2025-07-16Bibliographically approved
Jackson, M., Ayaz, E., Sarmast Ghahfarokhi, S., Singh, B. P., Nee, H.-P., Norrga, S., . . . Kostov, K. (2024). Experimental Evaluation of a Gate-Step-Response Method for Device Identification used in Self-Configurable Gate-Drive Units. In: ECCE Europe 2024 - Energy Conversion Congress and Expo Europe, Proceedings: . Paper presented at 2024 Energy Conversion Congress and Expo Europe, ECCE Europe 2024, Darmstadt, Germany, September 2-6, 2024. Institute of Electrical and Electronics Engineers (IEEE)
Open this publication in new window or tab >>Experimental Evaluation of a Gate-Step-Response Method for Device Identification used in Self-Configurable Gate-Drive Units
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2024 (English)In: ECCE Europe 2024 - Energy Conversion Congress and Expo Europe, Proceedings, Institute of Electrical and Electronics Engineers (IEEE) , 2024Conference paper, Published paper (Refereed)
Abstract [en]

The semiconductor industry plays a critical role in numerous sectors, yet faces vulnerability in its supply chains. The recent global semiconductor shortage highlighted the risks of relying on a single supplier. To mitigate this, companies adopt dualsourcing strategies, but power devices like silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) pose challenges due to manufacturing nuances. Configurable gate-drive units (GDUs) offer flexibility but often require external input for device recognition. This paper introduces a method to achieve a self-configurable gate-drive unit based on measuring the gate step-response for power device identification. The proposed method enhances safety, ensures seamless integration, and offers adaptability in full-bridge or multi-phase systems. Experimental results demonstrate component uniformity, emphasize the importance of interval selection, and showcase the impact of external gate resistors on rise and fall times. Estimations of input capacitance using different methods highlight their effectiveness in distinguishing among devices. The practical implementation of the proposed method contributes to the efficiency, reliability, and cost-effectiveness of self-configurable GDUs.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2024
Keywords
component identification, Gate-drive unit, input capacitance, self-configurable
National Category
Computer Vision and Learning Systems Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-367343 (URN)10.1109/ECCEEurope62508.2024.10751952 (DOI)2-s2.0-85211773142 (Scopus ID)
Conference
2024 Energy Conversion Congress and Expo Europe, ECCE Europe 2024, Darmstadt, Germany, September 2-6, 2024
Note

Part of ISBN 9798350364446

QC 20250716

Available from: 2025-07-16 Created: 2025-07-16 Last updated: 2025-07-16Bibliographically approved
Bhadoria, S., Ye, T., Sarmast Ghahfarokhi, S., Sun, C., Dijkhuizen, F. & Nee, H.-P. A New Topology for Power Flow Controllers and its Protection against Faults in HVDC Grids.
Open this publication in new window or tab >>A New Topology for Power Flow Controllers and its Protection against Faults in HVDC Grids
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(English)In: Article in journal (Other academic) Submitted
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-361542 (URN)
Note

Submitted

QC 20250324

Available from: 2025-03-21 Created: 2025-03-21 Last updated: 2025-03-30Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0002-2167-4616

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