Nanoelectromechanical (NEM) switches have near vertical turn-off transient, zero off-state leakage, and non-volatile behavior, ideal qualities for low power computing and memory applications. To realize this potential, large-scale integration of NEM switches is required. Here we introduce a three-dimensional (3-D) heterogeneous integration platform that leverages a standard silicon-on-insulator (SOI) CMOS foundry process, combined with post-processing of the foundry wafers to integrate silicon NEM switches. Within this platform, we seamlessly integrated both volatile 3-terminal (3-T) and nonvolatile 7-terminal (7-T) NEM switches. We demonstrate successful electrical programming and reprogramming of both switch types, validating the platform’s functionality and its potential for constructing densely integrated NEM switch-based logic circuits and non-volatile memories.

Reconfigurable optical gates control power and phase in programmable photonic circuits. However, state-of-the-art optical gates are power-hungry due to using heaters and large due to using Mach-Zehnder Interferometers. Here, we demonstrate a compact low-power optical gate based on a silicon photonic MEMS dual-drive directional coupler.