Open this publication in new window or tab >>Show others...
2025 (English)In: 2025 Energy Conversion Congress & Expo Europe (ECCE Europe), Institute of Electrical and Electronics Engineers (IEEE), 2025Conference paper, Published paper (Refereed)
Abstract [en]
This paper presents a condition monitoring approach for SiC MOSFET devices by compensating the ON-state resistance (Rdson ) to effectively detect package-related failures. While RdsON is a promising health indicator, its strong dependence on junction temperature (Tj) and threshold voltage (Vth ) can obscure degradation signals. This study proposes compensation techniques to mitigate the influence of Tj and Vth drift, enabling reliable monitoring. The methodology is validated using a custom-designed power cycling test bench, in compliance with AQG-324, to stress SiC MOSFETs under controlled thermal conditions. Two Rdson drift compensation methods are compared to analyze the evolution of compensated RdSON: a moving polynomial fit (Method 1) and a derivative-based technique with post-filtering (Method 2). Results show that both methods can differentiate between linear (die-level degradation) and non-linear (package-related failure) regions of RdsON drift. However, Method 1 provides more stable estimates with lower noise, especially for smaller window sizes. The findings support the use of compensated RdSON as a practical and robust condition monitoring parameter for SiC MOSFET reliability assessment.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2025
Keywords
Silicon carbide (SiC) MOSFETs, ON-state resistance, health monitoring, condition monitoring, power cycling, threshold voltage, junction temperature
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-375808 (URN)10.1109/ECCE-Europe62795.2025.11238801 (DOI)2-s2.0-105027524726 (Scopus ID)
Conference
2025 Energy Conversion Congress & Expo Europe (ECCE Europe), Birmingham, United Kingdom, September 1-4, 2025
Note
Part of ISBN 9798331567538, 9798331567521
QC 20260123
2026-01-212026-01-212026-01-23Bibliographically approved