Nondispersive infrared (NDIR) spectroscopy is an important technology for highly accurate and maintenance-free sensing of gases, such as ethanol and carbon dioxide. However, NDIR spectroscopy systems are currently too expensive, e.g., for consumer and automotive applications, as the infrared (IR) emitter is a critical but costly component of these systems. Here, we report on a low-cost large-area IR emitter featuring a broadband emission spectrum suitable for small NDIR gas spectroscopy systems. The infrared emitter utilizes Joule heating of a Kanthal (FeCrAl) filament that is integrated in the base substrate using an automated high-speed wire bonding process, enabling simple and rapid formation of a long meander-shaped filament. We describe the critical infrared emitter characteristics, including the effective infrared emission spectrum, thermal frequency response, and power consumption. Finally, we integrate the emitter into a handheld breath alcohol analyzer and show its operation in both laboratory and real-world settings, thereby demonstrating the potential of the emitter for future low-cost optical gas sensor applications.

Graphene's unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the integration of graphene into MEMS or NEMS devices and suspended structures such as proof masses on graphene membranes raises several technological challenges, including collapse and rupture of the graphene. We have developed a robust route for realizing membranes made of double-layer CVD graphene and suspending large silicon proof masses on membranes with high yields. We have demonstrated the manufacture of square graphene membranes with side lengths from 7 mu m to 110 mu m, and suspended proof masses consisting of solid silicon cubes that are from 5 mu mx5 mu mx16.4 mu m to 100 mu mx100 mu mx16.4 mu m in size. Our approach is compatible with wafer-scale MEMS and semiconductor manufacturing technologies, and the manufacturing yields of the graphene membranes with suspended proof masses were >90%, with >70% of the graphene membranes having >90% graphene area without visible defects. The measured resonance frequencies of the realized structures ranged from tens to hundreds of kHz, with quality factors ranging from 63 to 148. The graphene membranes with suspended proof masses were extremely robust, and were able to withstand indentation forces from an atomic force microscope (AFM) tip of up to 7000nN. The proposed approach for the reliable and large-scale manufacture of graphene membranes with suspended proof masses will enable the development and study of innovative NEMS devices with new functionalities and improved performances.

This correspondence highlights an error in the above-titled paper. The corrected material is presented here.

Nanoelectromechanical system (NEMS) sensors and actuators could be of use in the development of next-generation mobile, wearable and implantable devices. However, these NEMS devices require transducers that are ultra-small, sensitive and can be fabricated at low cost. Here, we show that suspended double-layer graphene ribbons with attached silicon proof masses can be used as combined spring–mass and piezoresistive transducers. The transducers, which are created using processes that are compatible with large-scale semiconductor manufacturing technologies, can yield NEMS accelerometers that occupy at least two orders of magnitude smaller die area than conventional state-of-the-art silicon accelerometers. With our devices, we also extract the Young’s modulus values of double-layer graphene and show that the graphene ribbons have significant built-in stresses.

Graphene is an atomically thin material that features unique electrical and mechanical properties, which makes it an extremely promising material for future nanoelectromechanical systems (NEMS). Recently, basic NEMS accelerometer functionality has been demonstrated by utilizing piezoresistive graphene ribbons with suspended silicon proof masses. However, the proposed graphene ribbons have limitations regarding mechanical robustness, manufacturing yield, and the maximum measurement current that can be applied across the ribbons. Here, we report on suspended graphene membranes that are fully clamped at their circumference and have attached silicon proof masses. We demonstrate their utility as piezoresistive NEMS accelerometers, and they are found to be more robust, have longer life span and higher manufacturing yield, can withstand higher measurement currents, and are able to suspend larger silicon proof masses, as compared to the previous graphene ribbon devices. These findings are an important step toward bringing ultraminiaturized piezoresistive graphene NEMS closer toward deployment in emerging applications such as in wearable electronics, biomedical implants, and internet of things (IoT) devices.

Scalable and cost-efficient transfer of nanomaterials and microstructures from their original fabrication substrate to a new host substrate is a key challenge for realizing heterogeneously integrated functional systems, such as sensors, photonics, and electronics. Here we demonstrate a high-throughput and versatile integration method utilizing conventional wire bonding tools to transfer-print carbon nanotubes (CNTs) and silicon microstructures. Standard ball stitch wire bonding cycles were used as scalable and high-speed pick-and-place operations to realize the material transfer. Our experimental results demonstrated successful transfer printing of single-walled CNTs (100 μm-diameter patches) from their growth substrate to polydimethylsiloxane, parylene, or Au/parylene electrode substrates, and realization of field emission cathodes made of CNTs on a silicon substrate. Field emission measurements manifested excellent emission performance of the CNT electrodes. Further, we demonstrated the utility of a high-speed wire bonder for transfer printing of silicon microstructures (60 μm × 60 μm × 20 μm) from the original silicon on insulator substrate to a new host substrate. The achieved placement accuracy of the CNT patches and silicon microstructures on the target substrates were within ± 4 μm. These results show the potential of using established and extremely cost-efficient semiconductor wire bonding infrastructure for transfer printing of nanomaterials and microstructures to realize integrated microsystems and flexible electronics.

This letter presents an active down-conversion mixer for high-temperature communication receivers. The mixer is based on an in-house developed 4H-SiC BJT and down-converts a narrow-band RF input signal centered around 59 MHz to an intermediate frequency of 500 kHz. Measurements show that the mixer operates from room temperature up to 500 °C. The conversion gain is 15 dB at 25 °C, which decreases to 4.7 dB at 500 °C. The input 1-dB compression point is 1 dBm at 25 °C and −2.5 dBm at 500 °C. The mixer is biased with a collector current of 10 mA from a 20 V supply and has a maximum DC power consumption of 204 mW. High-temperature reliability evaluation of the mixer shows a conversion gain degradation of 1.4 dB after 3-hours of continuous operation at 500 °C.

This paper presents a two-stage small signal intermediate frequency amplifier for high-temperature communication systems. The proposed amplifier is implemented using in-house silicon carbide bipolar technology. Measurements show that the proposed amplifier can operate from room temperature up to 251 °C. At a center frequency of 54.6 MHz, the amplifier has a gain of 22 dB at room temperature, which decreases gradually to 16 dB at 251 °C. Throughout the measured temperature range, it achieves an input and output return loss of less than-7 and-11 dB, respectively. The amplifier has a 1-dB output compression point of about 1.4 dBm, which remains fairly constant with temperature. Each amplifier stage is biased with a collector current of 10 mA and a base-collector voltage of 3 V. Under the aforementioned biasing, the maximum power dissipation of the amplifier is 221 mW.

In this paper we report of a novel and very simple fabrication method for realizing amperometric gas sensors using conventional wire bonding technology. Working and counter electrodes are made of 360 vertically standing bond wires, entirely manufactured by a fully automated, standard wire bonding tool. Our process enables standing bond wires with a length of 1.24 mm, resulting in an extremely high aspect-ratio of 50, thus effectively increasing the surface area of the working electrode. All gas sensor electrodes are embedded in a polymer-based, solid electrolyte. Therefore, laborious handling of liquid electrolytes can be avoided. Here, we report of a nitric oxide (NO) gas sensor that is capable of detecting NO gas concentrations down to the single-digit ppm range. The proposed approach demonstrates the feasibility towards a scalable and entire back-end fabrication concept for low-cost NO gas sensors.