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Publications (5 of 5) Show all publications
Lindahl, M., Velander, E., Blomberg, A. & Nee, H.-P. (2019). Threshold for induction motor terminal transient peak voltage with fast switching inverters. In: 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe: . Paper presented at 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe, 3 September 2019 through 5 September 2019. Institute of Electrical and Electronics Engineers Inc.
Open this publication in new window or tab >>Threshold for induction motor terminal transient peak voltage with fast switching inverters
2019 (English)In: 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe, Institute of Electrical and Electronics Engineers Inc. , 2019Conference paper, Published paper (Refereed)
Abstract [en]

Concerns have been raised that motor voltages might be very high if the fast switching characteristics of silicon carbide (SiC) are to be utilized. For this reason, the magnitude of the terminal voltage of an induction motor is investigated when fed from a fast switching SiC inverter through a long cable. It is found that the main insulation demand for the SiC case is only increased by 5 % compared to the silicon insulated-gate bipolar transistor (IGBT) case. This indicates that additional filters may not be necessary in applications with long cables where silicon IGBTs are replaced by fast switching SiC power semiconductors.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc., 2019
Keywords
Adjustable speed drive, Asynchronous motor, Induction motor, Industrial application, Insulation, Rail vehicle, Silicon Carbide (SiC, Switching speed, Traction application, Cables, Electric inverters, Industrial applications, Insulated gate bipolar transistors (IGBT), Semiconducting silicon compounds, Silicon carbide, Switching, Transients, Variable speed drives, Wide band gap semiconductors, Additional filters, Adjustable speed drives, Power semiconductors, Rail vehicles, Silicon carbides (SiC), Terminal voltages, Traction applications, Induction motors
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-268050 (URN)10.23919/EPE.2019.8914765 (DOI)000515073400017 ()2-s2.0-85076711545 (Scopus ID)
Conference
21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe, 3 September 2019 through 5 September 2019
Note

QC 20200316

Part of ISBN 9789075815313

Available from: 2020-03-16 Created: 2020-03-16 Last updated: 2024-10-23Bibliographically approved
Lindahl, M., Velander, E., Johansson, M. H., Blomberg, A. & Nee, H.-P. (2018). Silicon Carbide MOSFET Traction Inverter Operated in the Stockholm Metro System Demonstrating Customer Values. In: 2018 IEEE VEHICLE POWER AND PROPULSION CONFERENCE (VPPC): . Paper presented at 15th IEEE Vehicle Power and Propulsion Conference (VPPC), AUG 27-30, 2018, Chicago, IL. IEEE
Open this publication in new window or tab >>Silicon Carbide MOSFET Traction Inverter Operated in the Stockholm Metro System Demonstrating Customer Values
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2018 (English)In: 2018 IEEE VEHICLE POWER AND PROPULSION CONFERENCE (VPPC), IEEE , 2018Conference paper, Published paper (Refereed)
Abstract [en]

For the first time results are reported in literature of a successful field test using a silicon carbide (SiC) metal-oxide semi-conductor field-effect transistor (MOSFET) traction inverter operated in the field. The metro train has been operated over a period of 3 months on the Green Line in the Stockholm metro system. Increased traction converter power density with a volume reduction of 51 % as well as a weight reduction of 22 % have been achieved. Lower power losses allow the use of car motion cooling. From complementing measurements in the laboratory of silicon and SiC in the same power device package with varying switching frequencies considerably lower SiC temperatures can be reported.

Place, publisher, year, edition, pages
IEEE, 2018
Series
IEEE Vehicle Power and Propulsion Conference, ISSN 1938-8756
Keywords
Silicon carbide (SiC), SiC MOSFET, power semiconductor devices, AC motor drives, electrical traction, railway, metro, field test
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-246304 (URN)10.1109/VPPC.2018.8604975 (DOI)000459870300018 ()2-s2.0-85061674742 (Scopus ID)978-1-5386-6203-8 (ISBN)
Conference
15th IEEE Vehicle Power and Propulsion Conference (VPPC), AUG 27-30, 2018, Chicago, IL
Note

QC 20190320

Available from: 2019-03-20 Created: 2019-03-20 Last updated: 2024-03-15Bibliographically approved
Velander, E., Kruse, L. & Nee, H.-P. (2015). Optimal Switching of SiC Lateral MOSFET. In: : . Paper presented at European Conference on Power Electronics and Applications.
Open this publication in new window or tab >>Optimal Switching of SiC Lateral MOSFET
2015 (English)Conference paper, Poster (with or without abstract) (Other academic)
National Category
Engineering and Technology
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-207162 (URN)
Conference
European Conference on Power Electronics and Applications
Funder
VINNOVA, 2012-03699
Note

QC 20170531

Available from: 2017-05-17 Created: 2017-05-17 Last updated: 2022-06-27Bibliographically approved
Velander, E., Löfgren, A., Kretschmar, K. & Nee, H.-P. (2014). Novel Solutions for suppressing Parasitic Turn-on behaviour on Lateral Vertical JFETs. In: Novel Solutions for suppressing Parasitic Turn-on behaviour on Lateral Vertical JFETs: . Paper presented at European Conference on Power Electronics and Applications (pp. 8). Lappeenranta
Open this publication in new window or tab >>Novel Solutions for suppressing Parasitic Turn-on behaviour on Lateral Vertical JFETs
2014 (English)In: Novel Solutions for suppressing Parasitic Turn-on behaviour on Lateral Vertical JFETs, Lappeenranta, 2014, p. 8-Conference paper, Published paper (Other academic)
Place, publisher, year, edition, pages
Lappeenranta: , 2014
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-207160 (URN)10.1109/EPE.2014.6910760 (DOI)000361460001012 ()2-s2.0-84923878827 (Scopus ID)
Conference
European Conference on Power Electronics and Applications
Note

QC 20170531

Available from: 2017-05-17 Created: 2017-05-17 Last updated: 2022-06-27Bibliographically approved
Velander, E., Kruse, L., Wiik, T., Wiberg, A., Colmenares, J. & Nee, H.-P. An IGBT Turn-ON Concept Offering Low Losses Under Motor Drive dv/dt Constraints Based on Diode Current Adaption. IEEE transactions on power electronics
Open this publication in new window or tab >>An IGBT Turn-ON Concept Offering Low Losses Under Motor Drive dv/dt Constraints Based on Diode Current Adaption
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(English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107Article in journal (Refereed) Accepted
Place, publisher, year, edition, pages
IEEE
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-207164 (URN)
Note

QC 20170531

Available from: 2017-05-17 Created: 2017-05-17 Last updated: 2022-06-27Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0003-4307-2410

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