Large-scale quantum photonics requires the integration of several elements on the same chip, including quantum emitters and memories, active photonics, and single-photon detectors. In this talk, I will report on i) our recent work integrating superconducting nanowire single-photon detectors (SNSPD) with mechanically reconfigurable integrated photonics, and ii) our recently developed method for integration of SNSPDs onto arbitrary photonic substrates.

We demonstrate coherent interactions between quantum dot single photons and a resonant 87Rb ensemble in the experiment and show an open quantum system analysis. These results could help build fast hybrid quantum networks.

We demonstrate the on-demand creation and positioning of photon emitters in atomically thin MoS2 with very narrow ensemble broadening and negligible background luminescence. Focused helium-ion beam irradiation creates 100s to 1000s of such mono-typical emitters at specific positions in the MoS2 monolayers. Individually measured photon emitters show anti-bunching behavior with a g(2)(0) similar to 0.23 and 0.27. From a statistical analysis, we extract the creation yield of the He-ion induced photon emitters in MoS2 as a function of the exposed area, as well as the total yield of single emitters as a function of the number of He ions when single spots are irradiated by He ions. We reach probabilities as high as 18% for the generation of individual and spectrally clean photon emitters per irradiated single site. Our results firmly establish 2D materials as a platform for photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.

We demonstrate electrostatic switching of individual, site-selectively generated matrices of single photon emitters (SPEs) in MoS2 van der Waals heterodevices. We contact monolayers of MoS2 in field-effect devices with graphene gates and hexagonal boron nitride as the dielectric and graphite as bottom gates. After the assembly of such gate-tunable heterodevices, we demonstrate how arrays of defects, that serve as quantum emitters, can be site-selectively generated in the monolayer MoS2 by focused helium ion irradiation. The SPEs are sensitive to the charge carrier concentration in the MoS2 and switch on and off similar to the neutral exciton in MoS2 for moderate electron doping. The demonstrated scheme is a first step for producing scalable, gate-addressable, and gate-switchable arrays of quantum light emitters in MoS2 heterostacks.

Recently, two-dimensional materials have attracted significant interests for nonlinear optics [1] . Here, we report on the experimental investigation and the numerical modelling of nonlinear pulse propagation in a heterogeneous silicon nitride channel waveguide with the integration of a few-layer WS 2 flake significantly increasing the effective nonlinearity.

Scaling up quantum optics experiments requires on-chip reconfigurable quantum photonics, but their integration with detectors is a challenge. We show microelectromechanical reconfiguration of photonic circuits with on-chip superconducting single-photon detectors and demonstrate key applications.

Scaling up quantum optics experiments requires on-chip reconfigurable quantum photonics, but their integration with detectors is a challenge. We show microelectrome-chanical reconfiguration of photonic circuits with on-chip superconducting single-photon detectors and demonstrate key applications. 

Entangled photons are an integral part in quantum optics experiments and a key resource in quantum imaging, quantum communication, and photonic quantum information processing. Making this resource available on-demand has been an ongoing scientific challenge with enormous progress in recent years. Of particular interest is the potential to transmit quantum information over long distances, making photons the only reliable flying qubit. Entangled photons at the telecom C-band could be directly launched into single-mode optical fibers, enabling worldwide quantum communication via existing telecommunication infrastructure. However, the on-demand generation of entangled photons at this desired wavelength window has been elusive. Here, we show a photon pair generation efficiency of 69.9 +/- 3.6% in the telecom C-band by an InAs/GaAs semiconductor quantum dot on a metamorphic buffer layer. Using a robust phonon-assisted two-photon excitation scheme we measure a maximum concurrence of 91.4 +/- 3.8% and a peak fidelity to the Phi(+) state of 95.2 +/- 1.1%, verifying on-demand generation of strongly entangled photon pairs and marking an important milestone for interfacing quantum light sources with our classical fiber networks.

Efficient all-photonic quantum teleportation requires fast and deterministic sources of highly indistinguishable and entangled photons. Solid-state-based quantum emitters-notably semiconductor quantum dots-are a promising candidate for the role. However, despite the remarkable progress in nanofabrication, proof-of-concept demonstrations of quantum teleportation have highlighted that imperfections of the emitter still place a major roadblock in the way of applications. Here, rather than focusing on source optimization strategies, we deal with imperfections and study different teleportation protocols with the goal of identifying the one with maximal teleportation fidelity. Using a quantum dot with sub-par values of entanglement and photon indistinguishability, we show that the average teleportation fidelity can be raised from below the classical limit to 0.842(14), adopting a polarization-selective Bell state measurement and moderate spectral filtering. Our results, which are backed by a theoretical model that quantitatively explains the experimental findings, loosen the very stringent requirements set on the ideal entangled-photon source and highlight that imperfect quantum dots can still have a say in teleportation-based quantum communication architectures.