Catalyst passivation through carbon poisoning is a common and costly problem as it reduces the lifetime and performance of the catalyst. Adding oxygen to the feed stream could reduce poisoning but may also affect the activity negatively. We have studied the dehydrogenation, decomposition, and desorption of naphthalene co-adsorbed with oxygen on Ni(111) by combining temperature-programmed desorption (TPD), sum frequency generation spectroscopy (SFG), photoelectron spectroscopy (PES), and density functional theory (DFT). Chemisorbed oxygen reduces the sticking of naphthalene and shifts H2 production and desorption to higher temperatures by blocking active Ni sites. Oxygen increases the production of CO and reduces carbon residues on the surface. Chemisorbed oxygen is readily removed when naphthalene is decomposed. Oxide passivates the surface and reduces the sticking coefficient. But it also increases the production of CO dramatically and reduces the carbon residues. Ni2O3 is more active than NiO.

Since the discovery of graphene, intensive efforts have been made in search of novel two-dimensional (2D) materials. Decreasing the materials dimensionality to their ultimate thinness is a promising route to unveil new physical phenomena, and potentially improve the performance of devices. Among recent 2D materials, analogs of graphene, the group IV elements have attracted much attention for their unexpected and tunable physical properties. Depending on the growth conditions and substrates, several structures of silicene, germanene, and stanene can be formed. Here, we report the synthesis of a Kagome-like lattice of silicene on aluminum (1 1 1) substrates. We provide evidence of such an exotic 2D Si allotrope through scanning tunneling microscopy (STM) observations, high-resolution core-level (CL) and angle-resolved photoelectron spectroscopy (ARPES) measurements, along with Density Functional Theory calculations.

Reduction of Cu2O by hydrogen is a common preparation step for heterogeneous catalysts; however, a detailed understanding of the atomic reaction pathways is still lacking. Here, we investigate the interaction of atomic hydrogen with the Cu2O(100):(3,0;1,1) and Cu2O(111):(root 3 x root 3)R30 degrees surfaces using scanning tunneling microscopy (STM), low-energy electron diffraction, temperature-programmed desorption (TPD), and X-ray photoelectron spectroscopy (XPS). The experimental results are compared to density functional theory simulations. At 300 K, we identify the most favorable adsorption site on the Cu2O(100) surface: hydrogen atoms bind to an oxygen site located at the base of the atomic rows intrinsic to the (3,0;1,1) surface. The resulting hydroxyl group subsequently migrates to a nearby Cu trimer site. TPD analysis identifies H-2 as the principal desorption product. These observations imply that H-2 is formed through a disproportionation reaction of surface hydroxyl groups. The interaction of H with the (111) surface is more complex, including coordination to both Cu+ and O-CUS sites. STM and XPS analyses reveal the formation of metallic copper clusters on the Cu2O surfaces after cycles of hydrogen exposure and annealing. The interaction of the Cu clusters with the substrate is notably different for the two surface terminations studied: after annealing, the Cu clusters coalesce on the (100) termination, and the (3,0;1,1) reconstruction is partially recovered. Clusters formed on the (111) surface are less prone to coalescence, and the (root 3 x root 3)R30 degrees reconstruction was not recovered by heat treatment, indicating a weaker Cu cluster to support interaction on the (100) surface.

The temperature dependent dehydrogenation of naphthalene on Ni(111) has been investigated using vibrational sum-frequency generation spectroscopy, X-ray photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory with the aim of discerning the reaction mechanism and the intermediates on the surface. At 110 K, multiple layers of naphthalene adsorb on Ni(111); the first layer is a flat lying chemisorbed monolayer, whereas the next layer(s) consist of physisorbed naphthalene. The aromaticity of the carbon rings in the first layer is reduced due to bonding to the surface Ni-atoms. Heating at 200 K causes desorption of the multilayers. At 360 K, the chemisorbed naphthalene monolayer starts dehydrogenating and the geometry of the molecules changes as the dehydrogenated carbon atoms coordinate to the nickel surface; thus, the molecule tilts with respect to the surface, recovering some of its original aromaticity. This effect peaks at 400 K and coincides with hydrogen desorption. Increasing the temperature leads to further dehydrogenation and production of H-2 gas, as well as the formation of carbidic and graphitic surface carbon. 

The effect of sub-monolayer silicon on the oxidation of Al(111) and Al(100) surfaces was investigated using X-ray Photoelectron Spectroscopy (XPS) and density functional theory (DFT) calculations. On both surfaces the adatom site is preferred over substituting Si into the Al-lattice; on Al(100) the four fold hollow site is vastly favored whereas on Al(111) bridge and hollow sites are almost equal in energy. Upon O 2 exposure, Si is not oxidized but buried at the metal/oxide interface under the growing aluminum oxide. On Al(111), Si has a catalytic effect on both the initial oxidation by aiding in creating a higher local oxygen coverage in the early stages of oxidation and, in particular, at higher oxide coverages by facilitating lifting Al from the metal into the oxide. The final oxide, as measured from the Al2p intensity, is 25–30% thicker with Si than without. This observation is valid for both 0.1 monolayer (ML) and 0.3 ML Si coverage. On Al(100), on the other hand, at 0.16 ML Si coverage, the initial oxidation is faster than for the bare surface due to Si island edges being active in the oxide growth. At 0.5 ML Si coverage the oxidation is slower, as the islands coalesce and he amount of edges reduces. Upon oxide formation the effect of Si vanishes as it is overgrown by Al 2 O 3 , and the oxide thickness is only 6% higher than on bare Al(100), for both Si coverages studied. Our findings indicate that, in addition to a vanishing oxygen adsorption energy and Mott potential, a detailed picture of atom exchange and transport at the metal/oxide interface has to be taken into account to explain the limiting oxide thickness.

In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been treated with two pre deposition surface cleaning processes, namely CP1 and CP2. The former is a typical surface cleaning procedure used in SiC processing while the latter have an additional weak RCA1 cleaning step. In addition to the cleaning and deposition, the effects of post dielectric annealing (PDA) at various temperatures in N2O ambient have been investigated. Analyses by scanning electron microscopy show the presence of structural defects on the Al2O3 surface after annealing at 500 and 800 °C. These defects disappear after annealing at 1100 °C, possibly due to densification of the Al2O3 film. Interface analyses have been performed using X-ray photoelectron spectroscopy (XPS) and time-of-flight medium energy ion scattering (ToF MEIS). Both these measurements show the formation of an interfacial SiOx (0 < x < 2) layer for both the CP1 and CP2, displaying an increased thickness for higher temperatures. Furthermore, the quality of the sub-oxide interfacial layer was found to depend on the pre deposition cleaning. In conclusion, an improved interface with better electrical properties is shown for the CP2 sample annealed at 1100 °C, resulting in lower oxide charges, strongly reduced flatband voltage and leakage current, as well as higher breakdown voltage.

Surface coated magnetite nanoparticles (Fe3O4 NPs) with 3-mercaptopropionic acid were immobilized on amidoximated polyacrilonitrile (APAN) nanofibers using electrospinning followed by crosslinking. The prepared composite nanofibers were characterized with Scanning Electron Microscopy (SEM), and Fourier Transform Infrared analysis (FTIR). The composite nanofiber was evaluated for the removal of indigo carmine dye from aqueous solutions. The effects of contact time, initial dye concentration, solution pH and adsorption equilibrium isotherms were studied. The adsorption of indigo carmine was found to be greatly affected by solution pH. The maximum loading capacity was determined to be 154.5 mg g(-1) at pH = 5. The experimental kinetic data were fitted well using a pseudo-first order model. The adsorption isotherm studies showed that the adsorption of indigo carmine fits well with the Langmuir model. The reuse of the composite nanofiber was also investigated in which more than 90% of indigo carmine was recovered in 5 min. The results of stability studies showed that the adsorption efficiency can remain almost constant (90%) after five consecutive adsorption/desorption cycles.

Selenols are considered as an alternative to thiols in self-assembled monolayers, but the Se-C bond is one limiting factor for their usefulness. In this study, we address the stability of the Se-C bond by a combined experimental and theoretical investigation of gas phase-deposited hexane selenol (CH3(CH2)(5)SeH) on Au(111) using photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory (DFT). Experimentally, we find that initial adsorption leaves atomic Se on the surface without any carbon left on the surface, whereas further adsorption generates a saturated selenolate layer. The Se 3d component from atomic Se appears at 0.85 eV lower binding energy than the selenolate-related component. DFT calculations show that the most stable structure of selenols on Au(111) is in the form of RSe-Au-SeR complexes adsorbed on the unreconstructed Au(111) surface. This is similar to thiols on Au(111). Calculated Se 3d core-level shifts between elemental Se and selenolate in this structure nicely reproduce the experimentally recorded shifts. Dissociation of RSeH and subsequent formation of RH are found to proceed with high barriers on defect-free Au(111) terraces, with the highest barrier for scissoring R-Se. However, at steps, these barriers are considerably lower, allowing for Se-C bond breaking and hexane desorption, leaving elemental Se at the surface. Hexane is the selenol to selenolate formed by replacing the Se-C bond with a H-C bond by using the hydrogen liberated from transformation.

In this paper, the interface between Al2O3 and p-type 4H-SiC is evaluated using x-ray photoelectron spectroscopy (XPS) measurements. These studies are made on dielectricsemiconductor test structures with Al2O3 as dielectric with different pre- and post-deposition treatments. XPS measurements on the as-deposited samples with two different pre-surface cleaning methods have shown no formation of a SiO2 interlayer. However, after the post deposition rapid thermal annealing (RTA) at 1100 °C in N2O for 60 s, a SiO2 interlayer is formed. The surface band bending was determined from Si 2p core level peak shifts measured using XPS. These results suggest that Al2O3 deposited on the p-type 4H-SiC have a net positive oxide charge which is complementary to that of Al2O3 on n-type 4H-SiC. From these shifts it was found that the asdeposited RCA cleaned sample had an oxide charge of 5.6×1013 cm-2, as compared to standard cleaned samples, having 4.6×1013 cm-2. A further reduction in oxide charge was observed after annealing at 1100 °C in N2O, down to a value of 4×1013 cm-2.

The interface of Al2O3 with 4H-SiC is investigated with synchrotron-based high-resolution x-ray photoelectron spectroscopy to clarify the effect of post-dielectric deposition annealing processes (rapid thermal annealing (RTA) and furnace annealing (FA)) involved in device fabrication. Our results show that post-deposition annealing of Al2O3/4H-SiC up to 1100 degrees C forms a thin interfacial layer of SiO2 between Al2O3 and SiC, which possibly improves the dielectric properties of the system by reducing oxide charges and near-interface traps. Moreover, the formation of SiO2 at the interface gives additional band offset to the dielectric system. We have also observed that the RTA and FA processes have similar results at a high temperature of 1100 degrees C. Therefore, we propose that high-temperature post-oxide (Al2O3) deposition annealing of up to 1100 degrees C may be used in device processing, which can improve overall dielectric properties and consequently the device performance.