We study the local conductivity properties of KTiOPO4 using conductive atomic force microscopy in ultrahigh vacuum (UHV). We show that domains with opposite orientations have different conductivity values. We investigate the temperature dependence of the local conductivity and report a difference in the activation energy of 25% between different domains. Furthermore, we show that the local conductivity increases with the number of biased-scans. Finally, it is found that the domain wall conductivity previously observed at ambient conditions vanishes in UHV. Our results are discussed in terms of the screening effects and surface conditions.

A way to stabilize the domain structure in periodically poled Rb-doped KTiOPO 4 samples at high-temperatures is presented. The domain contraction along the b-crystallographic axis that is observed when crystals are annealed at high temperatures is suppressed when the ends of the domains along the b-axis are diced away. Additionally, the thermal stability of self-assembled domain gratings with a sub-μm average periodicity of 650 ± 200 nm and a domain-width of 225 ± 75 nm in mm-thick samples is investigated, and it is shown that the key factor for the domain stability is the domain width rather than the interdomain distance.

We study the conductive properties of charged domain walls in KTiOPO4 using conductive atomic force microscopy. We show that the region of increased conductivity at the domain wall broadens when the wall is in motion, extending from the initial wall position to the final wall position. When wall motion stops, the conductive region attains a narrow width. The magnitude of the conductivity of charged domain walls is four times larger than that of the surrounding domains, as is the case at stationary wall. We investigate

The coupling between ionic degrees of freedom and ferroelectricity has received renewed attention in recent years, given that surface electrochemical processes have been shown to be intrinsically linked to ferroelectric phase stability in ultrathin ferroelectric films. However, the coupling between bulk ionic transport and local polarization switching has received less attention, as typically the bulk ionic mobilities are low for common ferroelectrics at room temperature. Here, we use the coupled band-excitation method in conjunction with site-correlated time-of-flight secondary ion mass spectrometry, to determine the coupling between ferroelectric switching and ionic motion in single crystal KTiOPO4. The local scanning probe measurements indicate a substantial softening, as determined by resonant frequency changes, during reversal of polarization along one direction. These changes are correlated with the mass spectrometry measurements, showing a polarization-dependent accumulation of K ions at the polar surfaces, thus corroborating their role in the screening process. These studies shed light on the interplay between ionic dynamics and bulk ferroelectric switching and have implications for studies on domain wall conductivity, chemical switching, and bulk and surface-screening phenomena. 

We study the local ionic conductivity of ferroelectric domain walls and domains in KTiOPO4 single-crystals. We show a fourfold increase in conductivity at the domain walls, compared to that of the domains, attributed to an increased concentration of defects. Our current-voltage measurements reveal memristive-like behavior associated with topographic changes and permanent charge displacement. This behavior is observed for all the voltage sweep-rates at the domain walls, while it only occurs for low frequencies at the domains. We attribute these findings to the redistribution of ions due to the applied bias and their effect on the tip-sample barrier.

The temporal evolution of in situ second-harmonic generation was employed to study domain dynamics during periodic poling in Rb-doped KTP. With this method we investigated the influence of various poling parameters, including electric-field pulse shape, pulse magnitude, and number of pulses, on the quality of the QPM structure. It was found that the grating formation can be a sub-millisecond process and the benefits of using symmetric triangular electric-field pulse shape over square pulse shape in the single-pulse poling regime were demonstrated. Multiple-pulse poling with triangular pulses was shown to have a detrimental effect on the QPM structure quality, while multiple square pulses can provide additional flexibility to the structuring process.

We study the thermal stability of domain walls in periodically poled Rb-doped KTP crystals as a function of domain grating periodicity. Complete back-switching was observed by optical microscopy for sub-micrometer domains annealed at 730 °C.

We study the thermal stability of domain walls in periodically poled Rb-doped KTP crystals. Domain-wall motion is observed after annealing the crystals above 550 degrees C. This motion is highly anisotropic along the a- and b- crystallographic axes. Along the b-axis domain wall motion is in the order of tens of micrometers. In the a-direction, it results in either three orders of magnitude smaller domain wall displacement or in domain merging, depending on the initial domain configuration. We show that the thermal stability of the domain gratings depends on their periodicity, resulting in complete backswitching for sub-micrometer domains annealed at 730 degrees C.