Nanoelectromechanical (NEM) switches have near vertical turn-off transient, zero off-state leakage, and non-volatile behavior, ideal qualities for low power computing and memory applications. To realize this potential, large-scale integration of NEM switches is required. Here we introduce a three-dimensional (3-D) heterogeneous integration platform that leverages a standard silicon-on-insulator (SOI) CMOS foundry process, combined with post-processing of the foundry wafers to integrate silicon NEM switches. Within this platform, we seamlessly integrated both volatile 3-terminal (3-T) and nonvolatile 7-terminal (7-T) NEM switches. We demonstrate successful electrical programming and reprogramming of both switch types, validating the platform’s functionality and its potential for constructing densely integrated NEM switch-based logic circuits and non-volatile memories.

Single-molecule trapping and analysis are critical in understanding biomolecular processes at an unprecedented resolution. Traditional nanopore systems often face limitations in scalability and integration with electronic components, which complicates their use in compact, high-density applications. Addressing these challenges, we introduce a novel on-chip nanopore array system integrated with a silver (Ag) electrode and self-aligned femtolitersized cavities, representing an innovative approach for electronic single-molecule trapping. Our design utilizes a wafer-scale fabrication process with a buried electrode architecture, enabling the scalable production of high-density nanopore arrays without the need for through-wafer etching. Successful DNA translocation measurements demonstrate the system's potential as a versatile platform for single-molecule trapping and reaction studies.

Controlled breakdown has emerged as an effective method for fabricating solid-state nanopores in thin suspended dielectric membranes for various biomolecular sensing applications. On an unpatterned membrane, the site of nanopore formation by controlled breakdown is random. Nanopore formation on a specific site on the membrane has previously been realized using local thinning of the membrane by lithographic processes or laser-assisted photothermal etching under immersion in an aqueous salt solution. However, these approaches require elaborate and expensive cleanroom-based lithography processes or involve intricate procedures using custom-made equipment. Here, we present a rapid cleanroom-free approach using single pulse femtosecond laser exposures of 50 nm thick silicon nitride membranes in air to localize the site of nanopore formation by subsequent controlled breakdown to an area less than 500 nm in diameter on the membrane. The precise positioning of the nanopores on the membrane could be produced both using laser exposure powers which caused significant thinning of the silicon nitride membrane (up to 60% of the original thickness locally), as well as at laser powers which caused no visible modification of the membrane at all. We show that nanopores made using our approach can work as single-molecule sensors by performing dsDNA translocation experiments. Due to the applicability of femtosecond laser processing to a wide range of membrane materials, we expect our approach to simplify the fabrication of localized nanopores by controlled breakdown in a variety of thin film material stacks, thereby enabling more sophisticated nanopore sensors.

Solid-state nanopores offer unique possibilities for biomolecule sensing; however, scalable production of sub-5 nm pores with precise diameter control remains a manufacturing challenge. In this work, we developed a scalable method to fabricate sub-5 nm nanopores in silicon (Si) nanomembranes through metal-assisted chemical etching (MACE) using gold nanoparticles. Notably, we present a previously unreported self-limiting effect that enables sub-5 nm nanopore formation from both 10 and 40 nm nanoparticles in the 12 nm thick monocrystalline device layer of a silicon-on-insulator substrate. This effect reveals distinctive etching dynamics in ultrathin Si nanomembranes, enabling precise control over nanopore dimensions. The resulting nanopore sensor, suspended over self-aligned spheroidal oxide undercuts with diameters of just a few hundred nanometers, exhibited low electrical noise and high stability due to encapsulation within dielectric layers. In DNA translocation experiments, our nanopore platform could distinguish folded and unfolded DNA conformations and maintained stable baseline conductance for up to 6 h, demonstrating both sensitivity and robustness. Our scalable nanopore fabrication method is compatible with wafer-level and batch processing and holds promise for advancing biomolecular sensing and analysis.

Tunnel junctions have been suggested as high-throughput electronic single molecule sensors in liquids with several seminal experiments conducted using break junctions with reconfigurable gaps. For practical single molecule sensing applications, arrays of on-chip integrated fixed-gap tunnel junctions that can be built into compact systems are preferable. Fabricating nanogaps by electromigration is one of the most promising approaches to realize on-chip integrated tunnel junction sensors. However, the electrical behavior of fixed-gap tunnel junctions immersed in liquid media has not been systematically studied to date, and the formation of electromigrated nanogap tunnel junctions in liquid media has not yet been demonstrated. In this work, we perform a comparative study of the formation and electrical behavior of arrays of gold nanogap tunnel junctions made by feedback-controlled electromigration immersed in various liquid and gaseous media (deionized water, mesitylene, ethanol, nitrogen, and air). We demonstrate that tunnel junctions can be obtained from microfabricated gold nanoconstrictions inside liquid media. Electromigration of junctions in air produces the highest yield (61–67%), electromigration in deionized water and mesitylene results in a lower yield than in air (44–48%), whereas electromigration in ethanol fails to produce viable tunnel junctions due to interfering electrochemical processes. We map out the stability of the conductance characteristics of the resulting tunnel junctions and identify medium-specific operational conditions that have an impact on the yield of forming stable junctions. Furthermore, we highlight the unique challenges associated with working with arrays of large numbers of tunnel junctions in batches. Our findings will inform future efforts to build single molecule sensors using on-chip integrated tunnel junctions.

Tunnel junctions have long been used to immobilize and study the electronic transport properties of single molecules. The sensitivity of tunneling currents to entities in the tunneling gap has generated interest in developing electronic biosensors with single molecule resolution. Tunnel junctions can, for example, be used for sensing bound or unbound DNA, RNA, amino acids, and proteins in liquids. However, manufacturing technologies for on-chip integrated arrays of tunnel junction sensors are still in their infancy, and scalable measurement strategies that allow the measurement of large numbers of tunneling junctions are required to facilitate progress. Here, we describe an experimental setup to perform scalable, high-bandwidth (>10 kHz) measurements of low currents (pA–nA) in arrays of on-chip integrated tunnel junctions immersed in various liquid media. Leveraging a commercially available compact 100 kHz bandwidth low-current measurement instrument, we developed a custom two-terminal probe on which the amplifier is directly mounted to decrease parasitic probe capacitances to sub-pF levels. We also integrated a motorized three-axis stage, which could be powered down using software control, inside the Faraday cage of the setup. This enabled automated data acquisition on arrays of tunnel junctions without worsening the noise floor despite being inside the Faraday cage. A deliberately positioned air gap in the fluidic path ensured liquid perfusion to the chip from outside the Faraday cage without coupling in additional noise. We demonstrate the performance of our setup using rapid current switching observed in electromigrated gold tunnel junctions immersed in deionized water.

Detection of bio-molecules through quantum tunneling currents could lead to the next-generation DNA sequencing methods. In order to analyze the stability of these sensitive devices, it is necessary to characterize their conductance switching statistics. This characterization can be realized by denoising the tunneling current signal and clustering the outcomes. The first step can be done with the CUSUM algorithm, which detects abrupt changes and has been used in similar devices. We found heavy-tailed non-Gaussian noise in the measurement setup of the experimental devices. This paper suggests an approximation in the likelihood ratio step of the CUSUM algorithm that is more robust than the simple Gaussian noise assumption and, at the same time, is computationally more efficient than computing the fitted true likelihoods.

Tunneling junctions are pairs of electrodes separated by gaps of a few nanometers that allow electrons to tunnel across the gap. Tunneling junctions are of great importance for applications such as label-free biomolecule sensing and single molecule electronics, but their fabrication remains difficult and laborious. In this paper, we present a simple 2-stage process for the fabrication of tunneling junctions consisting of electrode pairs made of gold (Au). This is achieved by combining a novel methodology for fabricating crack-defined Au nanowires at wafer-scale with a constant voltage, feedback-free electromigration procedure to form tunneling nanogaps free of debris.

Break junctions provide tip-shaped contact electrodes that are fundamental components of nano and molecular electronics. However, the fabrication of break junctions remains notoriously time-consuming and difficult to parallelize. Here we demonstrate true parallel fabrication of gold break junctions featuring sub-3 nm gaps on the wafer-scale, by relying on a novel self-breaking mechanism based on controlled crack formation in notched bridge structures. We achieve fabrication densities as high as 7 million junctions per cm(2), with fabrication yields of around 7% for obtaining crack-defined break junctions with sub-3 nm gaps of fixed gap width that exhibit electron tunneling. We also form molecular junctions using dithiol-terminated oligo(phenylene ethynylene) (OPE3) to demonstrate the feasibility of our approach for electrical probing of molecules down to liquid helium temperatures. Our technology opens a whole new range of experimental opportunities for nano and molecular electronics applications, by enabling very large-scale fabrication of solid-state break junctions.