Body-diode voltage drop has been identified as a reliable parameter for both as a temperature-sensitive electrical parameter (TSEP) to estimate the SiC MOSFET junction temperature and as a failure precursor to identify any package related degradation. However, in the inverse-mode power-cycling test (PCT), it is found that the body-diode voltage drop changes at a fixed temperature. It is known from the previous research that the increase in a body-diode voltage drop at heating current acts as a failure precursor, indicating package related degradation. However, the change in the voltage drop at a low measurement current, due to degradation, is not well investigated. This study aims to analyse how the body-diode voltage drop at low current changes in TO-247 packaged SiC MOSFETs during inverse and forward-mode PCT. 

This paper presents the implementation procedure of three Pulse Width Modulation (PWM) techniques and a closed-loop motor control method using a model-based design approach. The implemented PWM techniques are the Sinusoidal Pulse Width Modulation (SPWM), Space Vector Pulse Width Modulation (SVPWM), and Selective Harmonic Elimination Pulse Width Modulation (SHEPWM), whereas the closed-loop motor control method is the Direct Torque Control (DTC). These techniques are implemented using a ZedBoard development board which contains a System on a Chip (SoC) Xilinx Zynq-7000. The procedure of implementing these techniques on the ZedBoard and required considerations are discussed. The model-based design approach facilitates rapid implementation without prior knowledge of HDL and ARM programming, which makes it advantageous for students and research work. To verify the integrity of the implemented designs, the ZedBoard is used to control an induction machine (IM), and the results are presented.