Cross-linked polymers of elemental sulfur are of potential interest for electronic applications as they enable facile thin-film processing of an abundant and inexpensive starting material. Here, we characterize the electronic structure of a cross-linked sulfur/diisopropenyl benzene (DIB) polymer by a combination of soft and hard X-ray photoelectron spectroscopy (SOXPES and HAXPES). Two different approaches for enhancing the conductivity of the polymer are compared: the addition of selenium in the polymer synthesis and the addition of lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) during film preparation. For the former, we observe the incorporation of Se into the polymer structure resulting in a changed valence-band structure. For the latter, a Fermi level shift in agreement with p-type doping of the polymer is observed and also the formation of a surface layer consisting mostly of TFSI anions.