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Realization of a Planar Power Circuit With Silicon Carbide MOSFETs on Printed Circuit Board
KTH, School of Electrical Engineering (EES).
KTH, School of Electrical Engineering (EES).ORCID iD: 0000-0002-1755-1365
SDU Elect Engn, Mads Clausen Inst, Sonderborg, Denmark..
2018 (English)In: SPEEDAM 2018 - Proceedings: International Symposium on Power Electronics, Electrical Drives, Automation and Motion, Institute of Electrical and Electronics Engineers (IEEE), 2018, p. 1079-1083, article id 8445375Conference paper, Published paper (Refereed)
Abstract [en]

Silicon Carbide (SiC) MOSFETs offer excellent properties as switches in power converters. However, the package of the device is an issue that prevents utilizing the advantages of SiC, as for instance fast switching speed. The packages of currently available SiC devices are the same as those previously used for silicon devices with moderate electrical and thermal characteristics resulting in accelerated aging and reliability issues. Moreover, the parasitic inductance caused by the package, limits the switching time and operating frequency. By excluding the package, the parasitic inductances will be eliminated to a large extent. In this study, the procedure of manufacturing a half-bridge planar power module, using four SiC MOSFET bare dies and PCB, is described. According to simulations, the parasitic inductance Lstray of the structure is approximately 96 % lower than most commercial half-bridge modules. It is also shown that double-side cooling can be employed for the proposed module if substrates with low thermal resistance are employed.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 1079-1083, article id 8445375
Keywords [en]
SiC MOSFET, planar power module, bare die, ultra-low parasitic inductance, double-sided cooling, PCB, DBC, high power density
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-235908DOI: 10.1109/SPEEDAM.2018.8445375ISI: 000445031300176Scopus ID: 2-s2.0-85053829415ISBN: 9781538649411 (print)OAI: oai:DiVA.org:kth-235908DiVA, id: diva2:1254120
Conference
2018 International Symposium on Power Electronics, Electrical Drives, Automation and Motion, SPEEDAM 2018, Amalfi, Italy, 20 June 2018 through 22 June 2018
Note

QC 20181008

Available from: 2018-10-08 Created: 2018-10-08 Last updated: 2024-03-15Bibliographically approved
In thesis
1. Waste-heat Recovery Using Thermoelectricity and Silicon Carbide Power Electronics
Open this publication in new window or tab >>Waste-heat Recovery Using Thermoelectricity and Silicon Carbide Power Electronics
2019 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Energy consumption in the world has increased continuously due to a growing population and increased energy consumption per capita. Moreover, the largest part of consumed energy still comes from fossil sources which in 2016 was more than 130 PWh. In order to minimize the greenhouse effect and meet the climate targets, the world's energy consumption must be greatly reduced and the energy also has to be used more efficiently. Due to the low efficiency of internal combustion engines in vehicles, the transport sector is the second largest source of greenhouse gas emissions, responsible for 20 % of the total CO2 emissions in the EU. In this work the electrical arrangement and power conditioning system suitable for waste heat recovery, using thermoelectric energy conversion in heavy duty vehicles, are investigated. Without a proper power conditioning system, the recovered power from a thermoelectric generator (TEG) disappears in form of Joule-losses. High-efficiency inter-leaved step-down converter with 98 % efficiency was developed and tested on a real-scale prototype truck, equipped with two TEGs. In addition, a strategy was required for the connection of thermoelectric modules (TEM) in the TEGs. A TEG may consist of several hundred TEMs and without a suitable connection, the thermal losses can be so high that the net power, recovered by the TEG is insignificant. In the worst case this can lead to an even higher fuel consumption. Moreover, the possibility to employ silicon carbide (SiC) metal oxide semiconductor field-effect transistor (MOSFET), which is a voltage-controlled and normally-OFF device, with high electric field strength, in such a low-voltage application (100-200 V), was investigated. Due to the high blocking voltage and power density, SiC MOSFETs are expected to replace silicon (Si) insulated gate bipolar transistors (IGBTs) in power converters. However, in low-voltage applications where Si MOSFETs are usually used, there have not been any obvious advantages to use SiC MOSFETs as a substitute for Si MOSFETs. Here, it is shown that SiC MOSFETs can advantageously be used in low-voltage applications. SiC MOSFETs have exceptional properties that nevertheless are fully utilized today. The packages of currently available SiC devices are the same as those previously used for Si devices, with moderate electrical and thermal characteristics. This results in slow switching speed, unnecessary losses. A half-bridge planar module using SiC MOSFET bare dies were designed, manufactured and tested. It was shown that a module with the same structure and 8 SiC MOSFETs can be manufactured with ultra-low parasitic inductances. The total switching energy was found to be 4.4 mJ which is approx. 63 % lower than commercially available modules.This thesis can be divided into three parts. In the first part, thermoelectricity is introduced and an introduction of SiC MOSFETs and its applications are given. In the second part, the results of waste heat recovery using TEG and its electrical arrangement in a Scania truck are presented. In this part, also the output power and the efficiency of the converter, using Si and SiC MOSFETs, are discussed. In the final part, the proposed planar power module with SiC MOSFET bare dies, its benefits such as reduced switching losses and double-sided cooling, are presented.

Abstract [sv]

I denna avhandling behandlas ämnet termoelektrisk energiomvandling från spillvärmen i avgassystemet i tunga fordon, med särskild fokus på el-komponenter och effektomvandlare som passar bäst till sådana applikationer. Utan en passande omvandlartopologi som kontrollerar och justerar effekten, skulle en stor del av den utvunna effekten från en termoelektrisk generator (TEG) försvinna i form av värme-förluster. Högverkningsgradig inter-leaved step-down effektomvandlare med 98 % verkningsgrad utvecklades och testades på en prototyplastbil. Vidare behövde en strategi tas fram för koppling av termoelektriska moduler (TEM) i TEG:en. En TEG kan bestå av flera hundra TEM:ar och utan korrekt koppling, kan de termiska förlusterna bli så stora att uteffekten från en TEG kan bli obetydlig och i värsta fall även leda till högre bränsleförbrukning. I avhandlingen har även möjligheterna till att använda kiselkarbid (SiC) metal-oxide semiconductor field-effect transistor (MOSFET) som är spänningsstyrd och normally-OFF, med hög elektrisk fältstyrka (1.2-1.7 kV)  i en sådan lågspänningsapplikation (100-200 V), undersöktes. På grund av den höga blockeringsspänningen och effektdensiteten, antas SiC MOSFET:ar ersätta kisel (Si) insulated-gate bipolar transistorer (IGBT:er) i effektomvandlare. I lågspänningsapplikationer används Si MOSFET:ar ofta, och det har inte funnits några självklara fördelar med att ersätta de lågspända Si MOSFET:arna med högspända SiC MOSFET:ar. Här visas det att det finns fördelar med att använda SiC MOSFET:ar även för lägre spänningar. SiC MOSFET:ar har exceptionella egenskaper som dock inte kan utnyttjas fullständigt idag eftersom det fortfarande används äldre, icke-anpassade kåpor som är lämpade för Si komponenter. En halvbrygga med 4st. SiC MOSFET bare dies blev designad, tillverkad och testad. Den föreslagna modulen klarar av 1.2 kV & 400 A med Eon och Eoff på 4.4 mJ vilket är ca. 63 % lägre än kommersiellt tillgängliga moduler. Avhandlingen kan delas i tre delar. I första delen introduceras termoelektricitet. I andra delen redovisas resultaten från återvinning av spillvärmen, med hjälp av TEG och dess elektriska anordning i en Scania lastbil. Här presenteras även omvandlarens verkningsgrad med Si- eller SiC MOSFET:ar som switch. Slutligen presenteras användningen av SiC MOSFET:ar, dess fördelar samt förslag på förbättring för att minska switchförlusterna.

Place, publisher, year, edition, pages
KTH Royal Institute of Technology, 2019. p. 110
Series
TRITA-EECS-AVL ; 2019:24
Keywords
Thermoelectricity, Power converter, Silicon Carbide, MOSFET, Power management, Thermoelectric generator, Renewable energy, Vehicle, Power electronic, Waste heat, Ultra-low inductance, Power module, Termoelektrisk energiomvandling, Kiselkarbid MOSFET, Effektomvandlare, Förnybar energikälla, Effektelektronik, Spillvärme, Effektmodul, Låg induktiv module
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-246206 (URN)978-91-7873-137-4 (ISBN)
Public defence
2019-04-08, Kollegiesalen, KTH-huset, Brinellvägen 8, Stockholm, 10:00 (English)
Opponent
Supervisors
Note

QC 20190318

Available from: 2019-03-18 Created: 2019-03-16 Last updated: 2022-06-26Bibliographically approved

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Risseh, Arash EdvinNee, Hans-Peter

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