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Width dependent auto-oscillating properties of constriction based spin Hall nano-oscillators
Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden.;Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden..
Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden.;Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden..
Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden.;Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden..
Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden.;Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden..ORCID iD: 0000-0002-9698-1610
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2020 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 116, no 23, article id 232401Article in journal (Refereed) Published
Abstract [en]

We study the current tunable microwave signal properties of nano-constriction-based spin Hall nano-oscillators in oblique magnetic fields as a function of the nano-constriction width, w = 50 - 140 nm. The threshold current is found to scale linearly with w, defining a constant threshold current density of Jth = 1.7 x 10(8) A/cm(2). While the current dependence of the microwave frequency shows the same generic non-monotonic behavior for all w >= 80 nm, the quality of the generated microwave signal improves strongly with w, as the total power increases and the linewidth decreases linearly with w. As a consequence, the peak power for a 140 nm nano-constriction is about an order of magnitude higher than that for an 80 nm nano-constriction. The smallest nano-constriction, w = 50 nm, exhibits a different behavior with a higher power and a worse linewidth, indicating a crossover into a qualitatively different narrow-constriction regime.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2020. Vol. 116, no 23, article id 232401
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Physical Sciences
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URN: urn:nbn:se:kth:diva-278006DOI: 10.1063/5.0007254ISI: 000540551700001OAI: oai:DiVA.org:kth-278006DiVA, id: diva2:1451674
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QC 20200703

Available from: 2020-07-03 Created: 2020-07-03 Last updated: 2022-06-26Bibliographically approved

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Åkerman, Johan

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