The retention of two neon isotopes, 20Ne and 22Ne, was studied by ion beam analysis (IBA) for thin-films of mixed W and B as well as for pure W and B layers grown on silicon-and tungsten-substrates by means of magnetron sputter deposition. Each isotope was implanted to a fluence of 3 × 1016 at./cm2 but at different energies (35–190 keV) to obtain deposition profiles closer to the surface and deeper into the film, depending on isotope and thin-film composition. Thermal annealing in combination with IBA was used to investigate the Ne-retention in a range of temperatures between RT and 1000 °C. Time-of-flight elastic recoil detection analysis was employed to monitor the retention and depth profiles of the Ne isotopes. Both Ne-isotopes remain at their original implantation depth, thus not indicating diffusion, intermixing or desorption for the full range of temperatures and for all studied compositions.